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21. 发明申请

US20070146520A1 SOLID STATE IMAGE PICKUP APPARATUS AND RADIATION IMAGE PICKUP APPARATUS 失效
标题翻译：固态图像拾取装置和放射图像拾取装置
公开(公告)号：US20070146520A1
公开(公告)日：2007-06-28
申请号：US11685044
申请日：2007-03-12
申请人： MINORU WATANABE , Masakazu Morishita , Chiori Mochizuki , Takamasa Ishii , Keiichi Nomura
发明人： MINORU WATANABE , Masakazu Morishita , Chiori Mochizuki , Takamasa Ishii , Keiichi Nomura
IPC分类号： H04N5/335
CPC分类号： H01L27/12 , H01L27/14643 , H04N5/32
摘要： In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.
摘要翻译：在具有与一个像素形成的受光器件连接的受光器件和一个以上的薄膜晶体管的固态摄像装置中，在所述薄膜晶体管的至少一部分上形成有所述受光器件的一部分，薄膜晶体管由源电极，漏电极，第一栅电极和第二栅电极构成，第二栅电极相对于源电极和漏极布置在与第一栅电极相反的一侧，第一栅极为连接到每个像素的第二栅电极，从而抑制光检测器件对TFT的不利影响，关断TFT处的泄漏，由于外部电场引起的TFT的阈值电压的变化，以及精确地传输照片载波到信号处理电路。

22. 发明授权

US07205568B2 Solid state image pickup apparatus and radiation image pickup apparatus 失效
标题翻译：固态摄像装置和放射线摄像装置
公开(公告)号：US07205568B2
公开(公告)日：2007-04-17
申请号：US10538774
申请日：2004-02-10
申请人： Minoru Watanabe , Masakazu Morishita , Chiori Mochizuki , Takamasa Ishii , Keiichi Nomura
发明人： Minoru Watanabe , Masakazu Morishita , Chiori Mochizuki , Takamasa Ishii , Keiichi Nomura
IPC分类号： H01L21/10
CPC分类号： H01L27/12 , H01L27/14643 , H04N5/32
摘要： In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.
摘要翻译：在具有与一个像素形成的受光器件连接的受光器件和一个以上的薄膜晶体管的固态摄像装置中，在所述薄膜晶体管的至少一部分上形成有所述受光器件的一部分，薄膜晶体管由源电极，漏电极，第一栅电极和第二栅电极构成，第二栅电极相对于源电极和漏极布置在与第一栅电极相反的一侧，第一栅极为连接到每个像素的第二栅电极，从而抑制光检测器件对TFT的不利影响，关断TFT处的泄漏，由于外部电场引起的TFT的阈值电压的变化，以及精确地传输照片载波到信号处理电路。

23. 发明授权

US07205547B2 Radiographic imaging substrate, radiographic imaging apparatus, and radiographic imaging system 失效
标题翻译：射线照相成像基片，放射成像装置和放射成像系统
公开(公告)号：US07205547B2
公开(公告)日：2007-04-17
申请号：US11147182
申请日：2005-06-08
申请人： Takamasa Ishii , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Keiichi Nomura
发明人： Takamasa Ishii , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Keiichi Nomura
IPC分类号： H01L27/146 , G01T1/20
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14609 , H01L27/14663 , H01L27/14676 , H01L27/14687
摘要： A radiographic imaging apparatus, comprising: a photoelectric conversion substrate including a pixel area where there are arranged a plurality of pixels each formed of a photoelectric conversion element and a switching element connected to the photoelectric conversion element in a matrix formed on an insulating substrate, a bias line for applying a bias to the photoelectric conversion element, a gate line for supplying a driving signal to the switching element, and a signal line for reading electric charges converted in the photoelectric conversion element; a wavelength conversion element for converting radiation to light that can be detected by the photoelectric conversion element, the wavelength conversion element being disposed according to a region including the pixel area; and connection wiring having a photoelectric conversion layer connected to at least a plurality of lines of one type, that one type being, the bias lines, the signal lines, and the gate lines, wherein at least a part of the connection wiring is arranged between the region on the insulating substrate and an edge of the insulating substrate. With this arrangement, it becomes possible to provide a panel for a radiographic imaging apparatus and a radiographic imaging apparatus free from deterioration in device performance and device destruction caused by a static electricity even if a substrate is electrically charged in a manufacturing process.
摘要翻译：一种放射线摄影成像装置，包括：光电转换基板，包括像素区域，其中排列有由光电转换元件形成的多个像素和连接到形成在绝缘基板上的矩阵中的光电转换元件的开关元件，用于向光电转换元件施加偏压的偏置线，用于向开关元件提供驱动信号的栅极线和用于读取在光电转换元件中转换的电荷的信号线; 波长转换元件，用于将辐射转换成能够由光电转换元件检测的光，所述波长转换元件根据包括像素区域的区域设置; 以及连接布线，其具有连接到至少一种类型的多条线的光电转换层，所述光电转换层的一种类型是偏置线，信号线和栅极线，其中至少一部分连接布线布置在绝缘基板上的区域和绝缘基板的边缘。利用这种布置，即使在制造过程中基板被充电，也可以提供一种用于放射线照相成像装置和放射线照相成像装置的面板，其不会因静电而导致的装置性能和装置破坏的劣化。

24. 发明申请

US20070007458A1 CONVERSION APPARATUS, RADIATION DETECTION APPARATUS, AND RADIATION DETECTION SYSTEM 有权
标题翻译：转换装置，辐射检测装置和辐射检测系统
公开(公告)号：US20070007458A1
公开(公告)日：2007-01-11
申请号：US11456155
申请日：2006-07-07
申请人： Chiori Mochizuki , Keiichi Nomura , Minoru Watanabe , Takamasa Ishii
发明人： Chiori Mochizuki , Keiichi Nomura , Minoru Watanabe , Takamasa Ishii
IPC分类号： G01T1/24 , H05G1/64 , H01L27/146 , H01L25/00 , H01L27/00
CPC分类号： H01L27/14603 , G01T1/2928 , H01L27/124 , H01L27/14632 , H01L27/14663 , H01L31/1136
摘要： A conversion apparatus includes pixels including switching elements provided on an insulating substrate and conversion elements disposed over the switching elements and connected to the switching elements. Conductive lines are coupled to the pixels and have terminal elements for providing a connection to an external circuit. The terminal elements are disposed in a metal layer that is formed over the conversion elements. The conversion apparatus further includes a transparent conductive layer covering surfaces of the terminal elements, and a protective layer covering edges of the terminal elements and having openings.
摘要翻译：一种转换装置包括像素，其包括设置在绝缘基板上的开关元件和设置在开关元件上并连接到开关元件的转换元件。导电线耦合到像素并且具有用于提供到外部电路的连接的端子元件。端子元件设置在形成在转换元件上的金属层中。转换装置还包括覆盖端子元件的表面的透明导电层和覆盖端子元件边缘并具有开口的保护层。

25. 发明申请

US20060077308A1 Image pickup apparatus and radiation image pickup apparatus 有权
标题翻译：图像拾取装置和放射线图像拾取装置
公开(公告)号：US20060077308A1
公开(公告)日：2006-04-13
申请号：US11227149
申请日：2005-09-16
申请人： Chiori Mochizuki , Masakazu Morishita , Keiichi Nomura , Minoru Watanabe , Takamasa Ishii
发明人： Chiori Mochizuki , Masakazu Morishita , Keiichi Nomura , Minoru Watanabe , Takamasa Ishii
IPC分类号： H04N5/70
CPC分类号： H01L27/14663 , H01L27/14692 , H04N5/32 , H04N5/374
摘要： A reset method of a conversion element is improved, and the simplification of wiring and the improvement of an open area ratio of the conversion element by means of an image pickup apparatus including a plurality of pixels arranged on an insulating substrate, each of the pixels including a conversion element, a first switching element connected to the conversion element in order to transfer an electric signal obtained by the conversion element, and a second switching element connected to the conversion element in order to reset the conversion element by giving constant potential to the conversion element, wherein the second switching element includes a gate electrode, and a source electrode or a drain electrode, and one of the source electrode and the drain electrode is electrically connected to the gate electrode.
摘要翻译：改进了转换元件的复位方法，并且通过包括布置在绝缘基板上的多个像素的图像拾取装置，简化布线和改善转换元件的开口面积比，每个像素包括转换元件，连接到转换元件以便传送由转换元件获得的电信号的第一开关元件和连接到转换元件的第二开关元件，以便通过给转换元件赋予恒定电位来复位转换元件元件，其中所述第二开关元件包括栅电极和源电极或漏电极，并且所述源电极和所述漏电极中的一个电连接到所述栅电极。

26. 发明授权

US06295142B1 Semiconductor apparatus and method for producing it 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06295142B1
公开(公告)日：2001-09-25
申请号：US09386343
申请日：1999-08-31
申请人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
发明人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
IPC分类号： H04N104
CPC分类号： H04N5/32 , G02F1/136204 , G02F1/136259 , G09G3/3648 , G09G2330/08
摘要： In order to prevent a decrease of yield due to a discontinuity of a wire or a short between upper and lower metal wires in production of a TFT matrix panel having pixel capacitors and TFTs and produce the TFT panel in a good yield without decrease of an aperture rate of the pixel capacitor portions even with increase in the size of the panel and with micronization of the pixel pattern, ends of bias lines on the opposite side to connection to a common electrode driver for application of bias are electrically connected to each other by a redundant wire.
摘要翻译：为了防止在具有像素电容器和TFT的TFT矩阵面板的生产中由于导线不连续或上下金属线之间的短路引起的产量降低，并且以不降低孔径的方式制造TFT面板像素电容器部分的速率即使随着面板尺寸的增加并且像素图案的微小化，与连接到用于施加偏压的公共电极驱动器相反的一侧的偏置线的端部彼此电连接冗余电线。

27. 发明授权

US08680472B2 Radiation detecting apparatus and radiation imaging system 有权
标题翻译：辐射检测仪和放射成像系统
公开(公告)号：US08680472B2
公开(公告)日：2014-03-25
申请号：US12596493
申请日：2008-07-18
申请人： Chiori Mochizuki , Minoru Watanabe , Takamasa Ishii
发明人： Chiori Mochizuki , Minoru Watanabe , Takamasa Ishii
IPC分类号： H01L27/146 , G01T1/20
CPC分类号： H04N5/361 , G01T1/2928 , H01L27/14603 , H01L27/14609 , H01L27/14636 , H01L27/14658 , H01L27/14663 , H01L27/14692 , H04N5/32 , H04N5/357 , H04N5/3655 , H04N5/3658 , H04N5/3696 , H04N5/37457 , H04N5/378
摘要： A radiation detecting apparatus capable of obtaining good images including decreased noise includes a plurality of pixels, each having a photoelectric conversion element for converting incident radiation into an electric signal and a first switch element, connected to the photoelectric conversion element, and a second switch element, not connected to the conversion element. A first signal line, a second signal line and a drive line are provided, where the first switch element has a first main electrode connected electrically to the first signal line, a second main electrode connected electrically to the photoelectric conversion element, and a gate electrode connected electrically to the drive line, and the second switch element has a first main electrode connected to the second signal line and a gate electrode connected electrically to the drive wiring common to the first switch element, and a differential means for outputting a signal corresponding to a difference between outputs from the first and second switch elements.
摘要翻译：能够获得包括降低噪声的良好图像的放射线检测装置包括多个像素，每个像素具有用于将入射辐射转换成电信号的光电转换元件和连接到光电转换元件的第一开关元件，以及第二开关元件，未连接到转换元素。提供第一信号线，第二信号线和驱动线，其中第一开关元件具有与第一信号线电连接的第一主电极，与光电转换元件电连接的第二主电极和栅电极与驱动线电连接，第二开关元件具有连接到第二信号线的第一主电极和与第一开关元件共用的驱动配线电连接的栅电极，以及用于输出对应于来自第一和第二开关元件的输出之间的差异。

28. 发明授权

US07723695B2 Imaging apparatus and radiation imaging system 有权
标题翻译：成像设备和放射成像系统
公开(公告)号：US07723695B2
公开(公告)日：2010-05-25
申请号：US11692671
申请日：2007-03-28
申请人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
发明人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
IPC分类号： G01T1/208
CPC分类号： H01L27/14659
摘要： This imaging apparatus has pixels arranged in a matrix shape on a substrate, each of which has a conversion element and the first TFT, wherein the first TFT is connected to the first gate wiring and signal wiring, and the conversion element is connected to bias wiring. The imaging apparatus has the second TFT 6 that is arranged outside a region in which the pixels are arranged. The signal wirings are mutually connected through the second TFT 6 outside a region in which the pixels are arranged. When the apparatus is driven, the second TFT is turned off.
摘要翻译：该成像装置具有在基板上排列成矩阵状的像素，每个像素具有转换元件和第一TFT，其中第一TFT连接到第一栅极布线和信号布线，并且转换元件连接到偏置布线。成像装置具有布置在像素排列的区域的外侧的第二TFT 6。信号布线通过第二TFT 6在像素排列的区域之外相互连接。当该装置被驱动时，第二个TFT被关闭。

29. 发明授权

US07638772B2 Imaging apparatus and radiation imaging system 失效
标题翻译：成像设备和放射成像系统
公开(公告)号：US07638772B2
公开(公告)日：2009-12-29
申请号：US12034969
申请日：2008-02-21
申请人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
发明人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
IPC分类号： G01T1/24
CPC分类号： G01T1/2928 , H01L27/14658 , H01L27/14692
摘要： An imaging apparatus includes a plurality of pixels disposed on an insulation substrate. Each of the pixels includes a plurality of thin-film transistors, a conversion element disposed above the TFTs, and a plurality of insulating layers disposed between the conversion element and the plurality of TFTs. The plurality of TFTs includes a reading TFT having a gate electrode electrically connected to the conversion element and a first selecting TFT electrically connected to a source electrode or a drain electrode of the reading TFT. At least one of a signal wiring, to which a signal corresponding to an electric charge obtained by conversion of incident light or radiation performed by the conversion element is transferred, and a gate wiring that supplies a driving signal to a gate electrode of the first selecting thin-film transistor, is disposed between the plurality of insulating layers.
摘要翻译：成像装置包括设置在绝缘基板上的多个像素。每个像素包括多个薄膜晶体管，设置在TFT上方的转换元件以及设置在转换元件和多个TFT之间的多个绝缘层。多个TFT包括具有与转换元件电连接的栅电极的读取TFT和与读取TFT的源电极或漏电极电连接的第一选择TFT。信号布线中的至少一个传输与通过转换元件进行的入射光或辐射的转换获得的电荷相对应的信号的信号线以及向第一选择的栅电极提供驱动信号的栅极布线薄膜晶体管，设置在多个绝缘层之间。

30. 发明授权

US07550731B2 Coversion apparatus and imaging system 失效
标题翻译：转换装置和成像系统
公开(公告)号：US07550731B2
公开(公告)日：2009-06-23
申请号：US11750719
申请日：2007-05-18
申请人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
发明人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
IPC分类号： G01T1/24 , H01L27/146
CPC分类号： H01L27/14665
摘要： A conversion apparatus includes a pixel region, on a substrate, including a plurality of pixels arranged in a matrix, with each pixel having a conversion element that converts radiation into electric charges, and a switching element. The switching element has a structure having a gate electrode, a first insulating layer, a second insulating layer, and a semiconductor layer from the substrate side in this order. The conversion element has an MIS-type structure of a bottom electrode arranged on an insulating layer extending from the first insulating layer of the switching element and being vertically higher than the gate electrode of the switching element, an insulating layer which is formed of the same layer as the second insulating layer of the switching element, and a semiconductor layer which is formed of the same layer as the semiconductor layer of the switching element from the substrate side in this order.
摘要翻译：转换装置包括在基板上的像素区域，其包括以矩阵形式布置的多个像素，每个像素具有将辐射转换成电荷的转换元件和开关元件。开关元件具有从基板侧依次具有栅电极，第一绝缘层，第二绝缘层和半导体层的结构。转换元件具有底部电极的MIS型结构，该底部电极布置在从开关元件的第一绝缘层延伸并垂直于开关元件的栅电极的绝缘层上，由其形成的绝缘层作为开关元件的第二绝缘层的层，以及从基板侧依次形成与开关元件的半导体层相同的层的半导体层。

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