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21. 发明授权

US06903011B2 Displacement method to grow cu overburden 失效
标题翻译：置换方法来增加覆盖层
公开(公告)号：US06903011B2
公开(公告)日：2005-06-07
申请号：US10455650
申请日：2003-06-05
申请人： Chi-Wen Liu , Ying-Lang Wang
发明人： Chi-Wen Liu , Ying-Lang Wang
IPC分类号： H01L21/288 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/288 , H01L21/7684 , H01L21/76879
摘要： A damascene-formed conductive region having a recess formed at the top surface thereof by a chemical-mechanical polish (CMP) process is repaired or regrown using a displacement method. A displacement material is deposited over the recessed conductive material. The displacement material is removed from a top surface of the insulating layer surrounding the damascene conductive region, and the semiconductor device is placed in a solution. The displacement material reacts with the solution, and copper in the solution is grown as a result of the displacement over the recess of the conductive region. The displacement method results in reducing or eliminating the recess formed by the CMP process.
摘要翻译：通过化学机械抛光（CMP）工艺在其顶表面形成具有凹陷的镶嵌形成的导电区域使用位移法进行修复或重新生长。位移材料沉积在凹陷的导电材料上。从位于镶嵌导电区域的绝缘层的上表面除去位移材料，将半导体器件置于溶液中。位移材料与溶液反应，并且溶液中的铜由于在导电区域的凹部上的位移而生长。位移法导致减少或消除由CMP工艺形成的凹槽。

22. 发明授权

US06660638B1 CMP process leaving no residual oxide layer or slurry particles 有权
标题翻译： CMP工艺不留下残留的氧化物层或浆料颗粒
公开(公告)号：US06660638B1
公开(公告)日：2003-12-09
申请号：US10038389
申请日：2002-01-03
申请人： Ying-Lang Wang , Shih-Chi Lin , Yi-Lung Cheng , Chi-Wen Liu , Ming-Hua Yoo , Wen-Kung Cheng , Jiann-Kwang Wang
发明人： Ying-Lang Wang , Shih-Chi Lin , Yi-Lung Cheng , Chi-Wen Liu , Ming-Hua Yoo , Wen-Kung Cheng , Jiann-Kwang Wang
IPC分类号： H01L21461
CPC分类号： C09G1/02 , H01L21/3212 , H01L21/7684
摘要： Two problems seen in CMP as currently executed are a tendency for slurry particles to remain on the surface and the formation of a final layer of oxide. These problems have been solved by adding to the slurry a quantity of TMAH or TBAH. This has the effect of rendering the surface being polished hydrophobic. In that state a residual layer of oxide will not be left on the surface at the conclusion of CMP. Nor will many slurry abrasive particles remain cling to the freshly polished surface. Those that do are readily removed by a simple rinse or buffing. As an alternative, the CMP process may be performed in three stages—first convention CMP, then polishing in a solution of TMAH or TBAH, and finally a gentle rinse or buffing.
摘要翻译：当前执行的CMP中看到的两个问题是浆料颗粒保留在表面上并形成最后一层氧化物的倾向。这些问题已经通过向浆料中加入一定量的TMAH或TBAH来解决。这具有使表面被抛光的疏水性的效果。在该状态下，在CMP结束时，残留的氧化层不会残留在表面上。许多浆料磨料颗粒也不会保持粘附到新鲜抛光的表面。那些可以通过简单的冲洗或抛光容易地去除。作为替代方案，CMP工艺可以分三个阶段执行 - 第一个惯例CMP，然后在TMAH或TBAH的溶液中抛光，最后进行柔和的冲洗或抛光。

23. 发明授权

US09847478B2 Methods and apparatus for resistive random access memory (RRAM) 有权
公开(公告)号：US09847478B2
公开(公告)日：2017-12-19
申请号：US13416183
申请日：2012-03-09
申请人： Ting-Chang Chang , Yong-En Syu , Fu-Yen Jian , Shih-Chieh Chang , Ying-Lang Wang
发明人： Ting-Chang Chang , Yong-En Syu , Fu-Yen Jian , Shih-Chieh Chang , Ying-Lang Wang
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/12 , H01L45/145 , H01L45/1608
摘要： Methods and apparatuses for a resistive random access memory (RRAM) device are disclosed. The RRAM device comprises a bottom electrode, a resistive switching layer disposed on the bottom electrode, and a top electrode disposed on the resistive switching layer. The resistive switching layer is made of a composite of a metal, Si, and O. There may be an additional tunnel barrier layer between the top electrode and the bottom electrode. The top electrode and the bottom electrode may comprise multiple sub-layers.

24. 发明授权

US09676114B2 Wafer edge trim blade with slots 有权
公开(公告)号：US09676114B2
公开(公告)日：2017-06-13
申请号：US13408327
申请日：2012-02-29
申请人： Chun-Ting Kuo , Kei-Wei Chen , Ying-Lang Wang , Kuo-Hsiu Wei
发明人： Chun-Ting Kuo , Kei-Wei Chen , Ying-Lang Wang , Kuo-Hsiu Wei
IPC分类号： B26D1/143 , B28D5/02 , B24D5/02 , B24D5/12 , B23D61/02 , B28D1/04 , B26D7/18 , B28D1/12
CPC分类号： B26D7/18 , B23D61/02 , B23D61/021 , B24D5/02 , B24D5/12 , B26D1/143 , B28D1/04 , B28D1/121 , B28D5/022 , Y10T83/0448 , Y10T83/9372
摘要： A wafer edge trim blade includes a round blade body and at least one slot formed inward from an outside edge of the round blade body. The at least one slot is configured to remove debris generated during wafer edge trimming using the wafer edge trim blade.

25. 发明授权

US09419155B2 Sensing product and method of making 有权
标题翻译：感知产品和制作方法
公开(公告)号：US09419155B2
公开(公告)日：2016-08-16
申请号：US13343922
申请日：2012-01-05
申请人： Shih-Chieh Chang , Yu-Ku Lin , Ying-Lang Wang
发明人： Shih-Chieh Chang , Yu-Ku Lin , Ying-Lang Wang
IPC分类号： H01L31/0232 , H01L31/101 , H01L31/18
CPC分类号： H01L31/0232 , H01L31/02327 , H01L31/101 , H01L31/18
摘要： This description relates to a sensing product formed using a substrate with a plurality of epi-layers. At least a first epi-layer has a different composition than the composition of a second epi-layer. The sensing product optionally includes at least one radiation sensing element in the second epi-layer and optionally an interconnect structure over the second epi-layer. The sensing product is formed by removing the substrate and all epi-layers other than the second epi-layer. A light incident surface of the second epi-layer has a total thickness variation of less than about 0.15 μm.
摘要翻译：该描述涉及使用具有多个外延层的基板形成的感测产品。至少第一外延层具有与第二外延层的组成不同的组成。感测产品可选地包括第二外延层中的至少一个辐射感测元件以及可选地在第二外延层上的互连结构。通过去除衬底和除第二外延层之外的所有外延层形成传感产物。第二外延层的光入射表面具有小于约0.15μm的总厚度变化。

26. 发明申请

US20130228886A1 Method and Apparatus for Backside Illumination Sensor 有权
标题翻译：背面照明传感器的方法和装置
公开(公告)号：US20130228886A1
公开(公告)日：2013-09-05
申请号：US13409924
申请日：2012-03-01
申请人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Ying-Lang Wang
发明人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Ying-Lang Wang
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/1464 , H01L27/14687
摘要： Methods and apparatus for a backside illuminated (BSI) image sensor device are disclosed. A BSI sensor device is formed on a substrate comprising a photosensitive diode. The substrate may be thinned at the backside, then a B doped Epi-Si(Ge) layer may be formed on the backside surface of the substrate. Additional layers may be formed on the B doped Epi-Si(Ge) layer, such as a metal shield layer, a dielectric layer, a micro-lens, and a color filter.
摘要翻译：公开了用于背面照明（BSI）图像传感器装置的方法和装置。在包括感光二极管的基板上形成BSI传感器装置。衬底可以在背面变薄，则可以在衬底的背面上形成B掺杂的Epi-Si（Ge）层。另外的层可以形成在B掺杂的Epi-Si（Ge）层上，例如金属屏蔽层，电介质层，微透镜和滤色器。

27. 发明申请

US20120292639A1 STRESSED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING 有权
标题翻译：应力半导体器件及其制造方法
公开(公告)号：US20120292639A1
公开(公告)日：2012-11-22
申请号：US13111732
申请日：2011-05-19
申请人： Miao-Cheng Liao , Min Hao Hong , Hsiang Hsiang Ko , Kei-Wei Chen , Ying-Lang Wang
发明人： Miao-Cheng Liao , Min Hao Hong , Hsiang Hsiang Ko , Kei-Wei Chen , Ying-Lang Wang
IPC分类号： H01L29/06 , H01L29/24 , H01L21/762
CPC分类号： H01L21/823807 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/0262
摘要： A semiconductor device and method of manufacturing a semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate and forming a dielectric layer over the substrate. The method further includes forming a first trench within the dielectric layer, wherein the first trench extends through the dielectric layer and epitaxially (epi) growing a first active layer within the first trench and selectively curing with a radiation energy the dielectric layer adjacent to the first active layer.
摘要翻译：公开了一种制造半导体器件的半导体器件和方法。用于制造半导体器件的示例性半导体器件和方法增强载流子迁移率。该方法包括提供衬底并在衬底上形成电介质层。该方法还包括在电介质层内形成第一沟槽，其中第一沟槽延伸穿过电介质层并且外延（epi）在第一沟槽内生长第一有源层，并用辐射能选择性地固化与第一沟槽相邻的介电层活动层

28. 发明授权

US08041440B2 Method and system for providing a selection of golden tools for better defect density and product yield 有权
标题翻译：提供选择金黄工具的方法和系统，以提高缺陷密度和产品产量
公开(公告)号：US08041440B2
公开(公告)日：2011-10-18
申请号：US11683305
申请日：2007-03-07
申请人： Chang Yung Cheng , Hsueh-Shih Fu , Ying-Lang Wang , Chin-Kun Wang
发明人： Chang Yung Cheng , Hsueh-Shih Fu , Ying-Lang Wang , Chin-Kun Wang
IPC分类号： G06F19/00 , G06F17/50 , G06Q10/00
CPC分类号： G05B19/41865 , G05B2219/31325 , G05B2219/45031 , G06Q10/0631 , G06Q10/06311 , G06Q10/06312 , G06Q10/06313 , Y02P90/14 , Y02P90/20
摘要： Aspects of the present disclosure provide a method and a system for providing a selection of golden tools for better defect density and product yield. A golden tool selection and dispatching system is provided to integrate different components for robust golden tool selection and dispatching. The golden tool selection system selects a set of golden tools based on performance of a set of manufacturing tools and provides a fully automated operational environment to produce a product using the set of golden tools.
摘要翻译：本公开的方面提供了一种提供用于更好的缺陷密度和产品产量的黄金工具的选择的方法和系统。提供了一个黄金工具选择和调度系统，用于集成不同的组件，用于强大的金刀选择和调度。黄金工具选择系统基于一套制造工具的性能选择一套金工具，并提供一个完全自动化的操作环境，以使用一套金工具生产产品。

29. 发明授权

US07837841B2 Apparatuses for electrochemical deposition, conductive layer, and fabrication methods thereof 有权
标题翻译：电化学沉积装置，导电层及其制造方法
公开(公告)号：US07837841B2
公开(公告)日：2010-11-23
申请号：US11686504
申请日：2007-03-15
申请人： Kei-Wei Chen , Mu-Han Cheng , Jian-Sin Tsai , Ying-Lang Wang
发明人： Kei-Wei Chen , Mu-Han Cheng , Jian-Sin Tsai , Ying-Lang Wang
IPC分类号： C25D5/00 , C25D5/18 , C25D17/00 , C25B15/00
CPC分类号： C25D17/001 , C25D17/007 , H01L21/2885 , H01L21/76843 , H01L21/76864 , H01L21/76877 , Y10T428/16
摘要： Electrochemical plating (ECP) apparatuses with auxiliary cathodes to create uniform electric flux density. An ECP apparatus for electrochemical deposition includes an electrochemical cell with an electrolyte bath for electrochemically depositing a metal on a substrate. A main cathode and an anode are disposed in the electrolyte bath to provide a main electrical field. A substrate holder assembly holds a semiconductor wafer connecting the cathode. An auxiliary cathode is disposed outside the electrochemical cell to provide an auxiliary electrical field such that a flux line density at the center region of the substrate holder assembly substantially equals that at the circumference of the substrate holder assembly.
摘要翻译：具有辅助阴极的电化学电镀（ECP）装置，以产生均匀的电流密度。用于电化学沉积的ECP设备包括具有用于在基底上电化学沉积金属的电解质浴的电化学电池。主阴极和阳极设置在电解槽中以提供主电场。衬底保持器组件保持连接阴极的半导体晶片。辅助阴极设置在电化学电池外部以提供辅助电场，使得衬底保持器组件的中心区域处的磁通线密度基本上等于衬底保持器组件的圆周处的磁通密度。

30. 发明授权

US07803257B2 Current-leveling electroplating/electropolishing electrode 有权
标题翻译：电流调平电镀/电解抛光电极
公开(公告)号：US07803257B2
公开(公告)日：2010-09-28
申请号：US10971836
申请日：2004-10-22
申请人： Shih-Chieh Chang , Ying-Lang Wang , Kei-Wei Chen , Shih-Ho Lin , Chun-Chang Chen
发明人： Shih-Chieh Chang , Ying-Lang Wang , Kei-Wei Chen , Shih-Ho Lin , Chun-Chang Chen
IPC分类号： C25D17/14 , C25D17/12
CPC分类号： H01L21/2885 , C25D17/001 , C25D17/12 , Y10T29/49208 , Y10T29/53204
摘要： A current-leveling electrode for improving electroplating and electrochemical polishing uniformity in the electrochemical plating or electropolishing of metals on a substrate is disclosed. The current-leveling electrode includes a base electrode and at least one sub-electrode carried by the base electrode. The at least one sub-electrode has a width which is less than a width of the base electrode to impart a generally tapered, stepped or convex configuration to the current-leveling electrode.
摘要翻译：公开了一种用于改善电化学电镀中的电镀和电化学抛光均匀性的电流调节电极或对基底上的金属的电解抛光。电流调平电极包括基极和由基极承载的至少一个子电极。所述至少一个子电极的宽度小于所述基极的宽度，以赋予所述电流调平电极大致锥形，阶梯形或凸形的构造。

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