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21. 发明授权

US07672093B2 Hafnium doped cap and free layer for MRAM device 有权
标题翻译：铪掺杂帽和MRAM器件的自由层
公开(公告)号：US07672093B2
公开(公告)日：2010-03-02
申请号：US11582244
申请日：2006-10-17
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： H01F10/3254 , B82Y25/00 , G11B5/3163 , G11B5/3906 , G11C11/161 , H01F10/3281 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A high performance MTJ, and a process for manufacturing it, are described. A capping layer of NiFeHf is used to getter oxygen out of the free layer, thereby increasing the sharpness of the free layer-tunneling layer interface. The free layer comprises two NiFe layers whose magnetostriction constants are of opposite sign, thereby largely canceling one another.
摘要翻译：描述了高性能MTJ及其制造方法。使用NiFeHf的覆盖层将氧气从自由层中吸出，从而增加了自由层 - 隧道层界面的清晰度。自由层包含两个NiFe层，它们的磁致伸缩常数是相反的，从而很大程度地相互抵消。

22. 发明授权

US07061730B2 Robust hard bias/conductor lead structures for future GMR heads 失效
标题翻译：坚固的硬偏置/导体引线结构，用于未来的GMR磁头
公开(公告)号：US07061730B2
公开(公告)日：2006-06-13
申请号：US10649456
申请日：2003-08-27
申请人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Chyu-Jiuh Torng , Ru-Ying Tong
发明人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Chyu-Jiuh Torng , Ru-Ying Tong
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , G11B5/4853 , G11B5/486 , H01F10/324 , H01F10/3268
摘要： A spin-valve magnetoresistive read element has a thin conductive lead layer of high sheet conductivity, high hardness, high melting point, high corrosion resistance and lacking the propensity for smearing, oozing, electromigration and nodule formation. Said lead layer is formed upon the hard magnetic longitudinal bias layer of an abutted junction spin-valve type magnetoresistive read head and said read head is therefore suitable for reading high density recorded disks at high RPM.
摘要翻译：自旋阀磁阻读取元件具有导电性高，硬度高，熔点高，耐腐蚀性高，缺乏涂抹，渗出，电迁移和结核形成倾向的薄导电铅层。所述引线层形成在接触自旋阀型磁阻读取头的硬磁纵向偏置层上，因此所述读头适用于以高RPM读取高密度记录盘。

23. 发明授权

US07750421B2 High performance MTJ element for STT-RAM and method for making the same 有权
标题翻译：用于STT-RAM的高性能MTJ元件和制作相同的方法
公开(公告)号：US07750421B2
公开(公告)日：2010-07-06
申请号：US11880583
申请日：2007-07-23
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： A STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co60Fe20B20 of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively or on a single such layer. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
摘要翻译：利用自旋角度动量的转移作为改变自由层的磁矩方向的机构的STT-MTJ MRAM单元包括IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧穿势垒层，其形成于钉扎层的Ar离子等离子体平滑表面，并且在一个实施例中，自由层包括分别在3和6埃厚度的Fe的两个结晶层之间形成的约20埃厚度的Co60Fe20B20的非晶层，或者在单个这样的层。自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

24. 发明申请

US20100136713A1 Hafnium doped cap and free layer for mram device 有权
标题翻译：铪掺杂帽和自由层用于mram器件
公开(公告)号：US20100136713A1
公开(公告)日：2010-06-03
申请号：US12657775
申请日：2010-01-27
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L43/12
CPC分类号： H01F10/3254 , B82Y25/00 , G11B5/3163 , G11B5/3906 , G11C11/161 , H01F10/3281 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A high performance MTJ, and a process for manufacturing it, are described. A capping layer of NiFeHf is used to getter oxygen out of the free layer, thereby increasing the sharpness of the free layer-tunneling layer interface. The free layer comprises two NiFe layers whose magnetostriction constants are of opposite sign, thereby largely canceling one another.
摘要翻译：描述了高性能MTJ及其制造方法。使用NiFeHf的覆盖层将氧气从自由层中吸出，从而增加了自由层 - 隧道层界面的清晰度。自由层包含两个NiFe层，它们的磁致伸缩常数是相反的，从而很大程度地相互抵消。

25. 发明授权

US07288281B2 CPP spin valve with ultra-thin CoFe(50%) laminations 失效
标题翻译： CPP自旋阀具有超薄CoFe（50％）叠片
公开(公告)号：US07288281B2
公开(公告)日：2007-10-30
申请号：US10933031
申请日：2004-09-02
申请人： Min Li , Kunliang Zhang , Cheng T. Horng , Chyu Jiuh Torng , Yu-Hsia Chen , Ru-Ying Tong
发明人： Min Li , Kunliang Zhang , Cheng T. Horng , Chyu Jiuh Torng , Yu-Hsia Chen , Ru-Ying Tong
IPC分类号： B05D5/12
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996
摘要： Fe rich CoFe can be used in AP1 to enhance CPP GMR. However, this is found to degrade the electro-migration performance of the device. This problem has been solved by using an AP1 that is a laminate of several CoFe(25%) layers, separated from one another by copper layers. Ultra-thin layers of iron-rich CoFe are then inserted at all the copper-CoFe interfaces.
摘要翻译： FeFe CoFe可用于AP1，以提高CPP GMR。然而，这被发现降低了器件的电迁移性能。通过使用作为多层CoFe（25％）层的层叠体的AP1，通过铜层彼此分离，解决了该问题。然后在所有铜 - 钴Fe界面上插入超薄的富铁CoFe层。

26. 发明申请

US20110014500A1 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application 有权
标题翻译：用于制造自旋转矩（STT）-RAM应用的高性能MTJ装置的结构和方法
公开(公告)号：US20110014500A1
公开(公告)日：2011-01-20
申请号：US12460412
申请日：2009-07-17
申请人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
发明人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
IPC分类号： G11B5/706 , C23C14/34 , B44C1/22
CPC分类号： H01L43/12 , B82Y25/00 , C23C14/3414 , G11C11/16 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.
摘要翻译：公开了一种STT-RAM MTJ，其具有通过自然氧化形成的MgO隧道势垒，并含有氧表面活性剂层以形成更均匀的MgO层和较低的击穿分布百分比。具有中等纳米通道层的CoFeB / NCC / CoFeB复合自由层使Jc0最小化，同时实现满足64Mb设计要求的热稳定性，写电压，读电压和Hc值。 NCC层在绝缘体基体中具有RM颗粒，其中R是Co，Fe或Ni，M是诸如Si或Al的金属。 NCC厚度保持在最小RM晶粒尺寸周围，以避免RM颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。可以在自由层中包括第二NCC层和第三CoFeB层，或者可以将第二NCC层插入Ru覆盖层的下方。

27. 发明授权

US08609262B2 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application 有权
标题翻译：用于制造自旋转矩（STT）-RAM应用的高性能MTJ装置的结构和方法
公开(公告)号：US08609262B2
公开(公告)日：2013-12-17
申请号：US12460412
申请日：2009-07-17
申请人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
发明人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
IPC分类号： G11B5/706 , H01L43/08 , H01L29/82 , G01R33/09 , G11C11/16
CPC分类号： H01L43/12 , B82Y25/00 , C23C14/3414 , G11C11/16 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.
摘要翻译：公开了一种STT-RAM MTJ，其具有通过自然氧化形成的MgO隧道势垒，并含有氧表面活性剂层以形成更均匀的MgO层和较低的击穿分布百分比。具有中等纳米通道层的CoFeB / NCC / CoFeB复合自由层使Jc0最小化，同时实现满足64Mb设计要求的热稳定性，写电压，读电压和Hc值。 NCC层在绝缘体基体中具有RM颗粒，其中R是Co，Fe或Ni，M是诸如Si或Al的金属。 NCC厚度保持在最小RM晶粒尺寸周围，以避免RM颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。可以在自由层中包括第二NCC层和第三CoFeB层，或者可以将第二NCC层插入Ru覆盖层的下方。

28. 发明申请

US20120181537A1 Magnetic Tunnel Junction for MRAM applications 有权
标题翻译： MRAM应用的磁隧道结
公开(公告)号：US20120181537A1
公开(公告)日：2012-07-19
申请号：US12930877
申请日：2011-01-19
申请人： Wei Cao , Cheng T. Horng , Witold Kula , Chyu Jiuh Torng
发明人： Wei Cao , Cheng T. Horng , Witold Kula , Chyu Jiuh Torng
IPC分类号： H01L29/82 , H01L21/36 , H01L29/04
CPC分类号： H01L43/10 , G11C11/161 , H01L27/222 , H01L43/00 , H01L43/02 , H01L43/08
摘要： A MTJ in an MRAM array is disclosed with a composite free layer having a lower crystalline layer contacting a tunnel barrier and an upper amorphous NiFeX layer for improved bit switching performance. The crystalline layer is Fe, Ni, or FeB with a thickness of at least 6 Angstroms which affords a high magnetoresistive ratio. The X element in the NiFeX layer is Mg, Hf, Zr, Nb, or Ta with a content of 5 to 30 atomic %. NiFeX thickness is preferably between 20 to 40 Angstroms to substantially reduce bit line switching current and number of shorted bits. In an alternative embodiment, the crystalline layer may be a Fe/NiFe bilayer. Optionally, the amorphous layer may have a NiFeM1/NiFeM2 configuration where M1 and M2 are Mg, Hf, Zr, Nb, or Ta, and M1 is unequal to M2. Annealing at 300° C. to 360° C. provides a high magnetoresistive ratio of about 150%.
摘要翻译：公开了具有接触隧道势垒的较低结晶层和上部非晶NiFeX层的复合自由层的MRAM阵列中的MTJ，用于改善位切换性能。结晶层是厚度至少为6埃的Fe，Ni或FeB，其具有高的磁阻比。 NiFeX层中的X元素为含有5〜30原子％的Mg，Hf，Zr，Nb或Ta。 NiFeX厚度优选在20至40埃之间，以显着减少位线切换电流和短路位数。在替代实施例中，结晶层可以是Fe / NiFe双层。可选地，非晶层可以具有其中M1和M2是Mg，Hf，Zr，Nb或Ta的NiFeM1 / NiFeM2构型，M1不等于M2。在300℃至360℃退火，提供约150％的高磁阻比。

29. 发明授权

US07016165B2 Abutted junction GMR read head with an improved hard bias layer and a method for its fabrication 失效
标题翻译：基极GMR读头具有改进的硬偏置层及其制造方法
公开(公告)号：US07016165B2
公开(公告)日：2006-03-21
申请号：US09822491
申请日：2001-04-02
申请人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Cheng T. Horng , Mao-Min Chen
发明人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Cheng T. Horng , Mao-Min Chen
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49032
摘要： A method for forming a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region and a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region fabricated according to that method.
摘要翻译：用于形成具有较薄的硬磁纵向偏置层的自旋阀型抵接接头GMR传感器元件的方法，其具有在接合区域中显着改善的磁性能和具有较薄硬磁纵向偏置层的自旋阀型邻接结GMR传感器元件在根据该方法制造的接合区域中具有显着改善的磁性能。

30. 发明授权

US08786036B2 Magnetic tunnel junction for MRAM applications 有权
标题翻译：用于MRAM应用的磁隧道结
公开(公告)号：US08786036B2
公开(公告)日：2014-07-22
申请号：US12930877
申请日：2011-01-19
申请人： Wei Cao , Cheng T. Horng , Witold Kula , Chyu Jiuh Torng
发明人： Wei Cao , Cheng T. Horng , Witold Kula , Chyu Jiuh Torng
IPC分类号： H01L43/10 , H01L27/22
CPC分类号： H01L43/10 , G11C11/161 , H01L27/222 , H01L43/00 , H01L43/02 , H01L43/08
摘要： A MTJ in an MRAM array is disclosed with a composite free layer having a lower crystalline layer contacting a tunnel barrier and an upper amorphous NiFeX layer for improved bit switching performance. The crystalline layer is Fe, Ni, or FEB with a thickness of at least 6 Angstroms which affords a high magnetoresistive ratio. The X element in the NiFeX layer is Mg, Hf, Zr, Nb, or Ta with a content of 5 to 30 atomic % NiFeX thickness is preferably between 20 to 40 Angstroms to substantially reduce bit line switching current and number of shorted bits. In an alternative embodiments, the crystalline layer may be a Fe/NiFe bilayer. Optionally, the amorphous layer may have a NiFeM1/NiFeM2 configuration where M1 and M2 are Mg, Hf, Zr, Nb, or Ta, and M1 is unequal to M2. Annealing at 300° C. to 360° C. provides a high magnetoresistive ratio of about 150%.
摘要翻译：公开了具有接触隧道势垒的较低结晶层和上部非晶NiFeX层的复合自由层的MRAM阵列中的MTJ，用于改善位切换性能。结晶层是厚度至少为6埃的Fe，Ni或FEB，其具有高的磁阻比。 NiFeX层中的X元素为含有5〜30原子％NiFeX厚度的Mg，Hf，Zr，Nb或Ta优选为20〜40埃，以显着降低位线切换电流和短路位数。在替代实施例中，结晶层可以是Fe / NiFe双层。可选地，非晶层可以具有其中M1和M2是Mg，Hf，Zr，Nb或Ta的NiFeM1 / NiFeM2构型，M1不等于M2。在300℃至360℃退火，提供约150％的高磁阻比。

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