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21. 发明申请

US20090152596A1 SEMICONDUCTOR FET SENSOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体FET传感器及其制造方法
公开(公告)号：US20090152596A1
公开(公告)日：2009-06-18
申请号：US12195302
申请日：2008-08-20
申请人： Jong Heon YANG , In Bok Baek , Chang Geun Ahn , Chan Woo Park , An Soon Kim , Han Young Yu , Chil Seong Ah , Tae Youb Kim , Myung Sim Jun , Moon Gyu Jang
发明人： Jong Heon YANG , In Bok Baek , Chang Geun Ahn , Chan Woo Park , An Soon Kim , Han Young Yu , Chil Seong Ah , Tae Youb Kim , Myung Sim Jun , Moon Gyu Jang
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： G01N27/4145 , H01L29/66818 , H01L29/7853
摘要： Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.
摘要翻译：提供了一种半导体场效应晶体管（FET）传感器及其制造方法。该方法包括提供半导体衬底，在半导体衬底上形成具有鳍状结构的传感器结构，将用于电欧姆接触的离子注入到传感器结构中，以及在传感器结构上沉积金属电极，将感测材料固定为特别地将目标材料组合到鳍状结构的两个侧壁表面上，并且在传感器结构上形成通道，使得目标材料通过鳍状结构。

22. 发明授权

US08058673B2 Biosensor using nanodot and method of manufacturing the same 有权
标题翻译：使用纳米点的生物传感器及其制造方法
公开(公告)号：US08058673B2
公开(公告)日：2011-11-15
申请号：US12240133
申请日：2008-09-29
申请人： Tae Youb Kim , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
发明人： Tae Youb Kim , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
IPC分类号： H01L29/72
CPC分类号： G01N33/5432 , G01N27/4145 , G01N27/4146 , G01N33/5438 , Y10S977/721 , Y10S977/784 , Y10S977/938
摘要： A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.
摘要翻译：提供了使用纳米点的生物传感器及其制造方法。可以通过CMOS工艺形成硅纳米线，以降低制造成本。此外，为了容易地改变硅纳米线的导电性，带电的纳米点被耦合到待检测的靶分子，从而可以实现能够提供良好的灵敏度并以低成本制造的生物传感器。

23. 发明申请

US20130149532A1 FIBER FABRICATION METHOD AND THE FIBER FABRICATED THEREBY 有权
标题翻译：纤维制造方法和纤维制造方法
公开(公告)号：US20130149532A1
公开(公告)日：2013-06-13
申请号：US13592270
申请日：2012-08-22
申请人： Yong Ju Yun , Zin Sig Kim , Han Young Yu , Yark Yeon Kim , Won Ick Jang
发明人： Yong Ju Yun , Zin Sig Kim , Han Young Yu , Yark Yeon Kim , Won Ick Jang
IPC分类号： B29C47/12 , D01F9/12 , D01F9/00 , D02G3/04 , B82Y30/00
CPC分类号： B29C47/0014 , B29C47/04 , B29C47/12 , B82Y30/00 , D01D5/0038 , D01D5/0069 , D01D5/38 , D01F6/60 , Y10T428/2931
摘要： Provided are fiber fabrication method and the fiber fabricated thereby. In this method, different monomer solutions are electrospun through nozzles whose outlets are stuck to each other and simultaneously interfacially polymerized to form a polymer fiber without a complicated process of preparing a polymer solution. Therefore, a polymer fiber can be simply prepared.
摘要翻译：提供了纤维制造方法和由此制造的纤维。在这种方法中，不同的单体溶液通过喷嘴进行静电纺丝，其出口彼此粘合并同时进行界面聚合以形成聚合物纤维，而不需要制备聚合物溶液的复杂工艺。因此，可以简单地制备聚合物纤维。

24. 发明授权

US08394657B2 Biosensor using nanodot and method of manufacturing the same 有权
标题翻译：使用纳米点的生物传感器及其制造方法
公开(公告)号：US08394657B2
公开(公告)日：2013-03-12
申请号：US13240943
申请日：2011-09-22
申请人： Tae Youb Kim , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
发明人： Tae Youb Kim , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
IPC分类号： H01L29/72
CPC分类号： G01N33/5432 , G01N27/4145 , G01N27/4146 , G01N33/5438 , Y10S977/721 , Y10S977/784 , Y10S977/938
摘要： A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.
摘要翻译：提供了使用纳米点的生物传感器及其制造方法。可以通过CMOS工艺形成硅纳米线，以降低制造成本。此外，为了容易地改变硅纳米线的导电性，带电的纳米点被耦合到待检测的靶分子，从而可以实现能够提供良好的灵敏度并以低成本制造的生物传感器。

25. 发明授权

US08283654B2 Nanowire memory 有权
标题翻译：纳米线记忆
公开(公告)号：US08283654B2
公开(公告)日：2012-10-09
申请号：US12621809
申请日：2009-11-19
申请人： Han Young Yu , Byung Hoon Kim , Soon Young Oh , Yong Ju Yun , Yark Yeon Kim , Won Gi Hong
发明人： Han Young Yu , Byung Hoon Kim , Soon Young Oh , Yong Ju Yun , Yark Yeon Kim , Won Gi Hong
IPC分类号： H01L29/06 , H01L35/24 , H01L31/0312 , H01L29/792 , H01L31/0328
CPC分类号： H01L29/775 , B82Y10/00 , H01L27/10873 , H01L29/0665 , H01L29/0673 , H01L29/685
摘要： Provided is a nanowire memory including a source and a drain corresponding to the source, and a nano channel formed to connect the source to the drain. Here, the nano channel includes a nanowire electrically connecting the source to the drain according to voltages of the source and drain, and a nanodot formed on the nanowire and having a plurality of potentials capturing charges. Thus, the nanowire memory has a simple structure, thereby simplifying a process. It can generate multi current levels by adjusting several energy states using gates, operate as a volatile or non-volatile memory by adjusting the gates and the energy level, and include another gate configured to adjust the energy level, resulting in formation of a hybrid structure of volatile and non-volatile memories.
摘要翻译：提供了纳米线存储器，其包括对应于源极的源极和漏极，以及形成为将源极连接到漏极的纳米通道。这里，纳米通道包括根据源极和漏极的电压将源极与漏极电连接的纳米线，以及形成在纳米线上并具有捕获电荷的多个电位的纳米点。因此，纳米线存储器具有简单的结构，从而简化了工艺。它可以通过使用门调节几个能量状态来产生多个电流电平，通过调整栅极和能量水平来操作为易失性或非易失性存储器，并且包括配置成调整能级的另一个门，从而形成混合结构的易失性和非易失性存储器。

26. 发明授权

US09289937B2 Filter fabrication method and the filter formed thereby 有权
标题翻译：过滤器制造方法和由此形成的过滤器
公开(公告)号：US09289937B2
公开(公告)日：2016-03-22
申请号：US13615042
申请日：2012-09-13
申请人： Yong Ju Yun , Han Young Yu , Yark Yeon Kim , Won Ick Jang
发明人： Yong Ju Yun , Han Young Yu , Yark Yeon Kim , Won Ick Jang
IPC分类号： B29C33/56 , B29C33/58 , B29C33/60 , B29C33/62 , B29C33/64 , B29C47/30 , B29C37/00 , D01D5/00 , B29C47/00
CPC分类号： B29C47/30 , B29C37/0067 , B29C47/0009 , D01D5/0038 , D01D5/0076
摘要： Provided are a filter fabrication method and the filter formed thereby. In this method, a three-dimensional graphene polymer complex filter can be easily fabricated. By forming various patterns at a surface of a collector, patterns can be simply formed at a surface of a filter. This provides advantages at control of pressure difference which can be one of the very important factors necessary for designing and fabricating a filter. Since the filter includes graphene particles homogeneously combined to the polymer nanofiber, the filter can represent a superior antibiosis.
摘要翻译：提供了一种过滤器制造方法和由此形成的过滤器。在该方法中，可以容易地制造三维石墨烯聚合物络合物过滤器。通过在集电体的表面形成各种图案，可以简单地在滤光器的表面形成图案。这提供了控制压力差的优点，其可以是设计和制造过滤器所必需的非常重要的因素之一。由于过滤器包括与聚合物纳米纤维均匀组合的石墨烯颗粒，所以过滤器可以表现出优异的抗菌性。

27. 发明授权

US08941065B2 Space perception device 有权
标题翻译：空间感知装置
公开(公告)号：US08941065B2
公开(公告)日：2015-01-27
申请号：US13620245
申请日：2012-09-14
申请人： Han Young Yu , Yark Yeon Kim , Yong Ju Yun , Won Ick Jang , Eun-ju Jeong , Changho Han
发明人： Han Young Yu , Yark Yeon Kim , Yong Ju Yun , Won Ick Jang , Eun-ju Jeong , Changho Han
IPC分类号： A61H3/06
CPC分类号： G01S13/874
摘要： Disclosed is a space perception device which includes a transceiver unit transmitting and receiving a signal; a processing unit analyzing signals transmitted and received through the transceiver unit to search location information of an obstacle at a space; and a vibration unit providing a user with location information of an obstacle at a space in response to a control of the processing unit. The vibration unit includes a plurality of vibrators having different three-dimensional coordinates.
摘要翻译：公开了一种空间感知装置，其包括发送和接收信号的收发机单元; 处理单元，分析通过所述收发器单元发送和接收的信号，以搜索空间上的障碍物的位置信息; 以及振动单元，响应于处理单元的控制向用户提供空间上的障碍物的位置信息。振动单元包括具有不同三维坐标的多个振动器。

28. 发明授权

US08834692B2 Dissolved oxygen measurement system 有权
标题翻译：溶解氧测量系统
公开(公告)号：US08834692B2
公开(公告)日：2014-09-16
申请号：US13218830
申请日：2011-08-26
申请人： Han Young Yu , Yark Yeon Kim , Yong Ju Yun , Won Ick Jang
发明人： Han Young Yu , Yark Yeon Kim , Yong Ju Yun , Won Ick Jang
IPC分类号： G01N27/26 , G01N27/30 , G01N27/407
CPC分类号： G01N27/407
摘要： Provided is a dissolved oxygen measurement system. The dissolved oxygen measurement system includes a hydrogen storage device storing hydrogen, a first hydrogen fuel cell in which the hydrogen stored in the hydrogen storage device and water supplied from the outside in real time react with each other to generate first electricity energy, a water storage tank storing the water supplied from the outside, a second hydrogen fuel cell in which the water supplied from the water storage tank and the hydrogen stored in the hydrogen storage device react with each other to generate second electricity energy, and a control unit analyzing a difference between the first electricity energy and the second electricity energy.
摘要翻译：提供了一种溶解氧测量系统。溶解氧测量系统包括存储氢的氢存储装置，第一氢燃料电池，其中存储在氢存储装置中的氢和从外部供应的水实时地相互反应以产生第一电能;储水器存储从外部供应的水的储存器;第二氢燃料电池，其中从储水箱供应的水和储存在储氢装置中的氢彼此反应以产生第二电能;以及控制单元，在第一电能和第二电能之间。

29. 发明申请

US20130075326A1 FILTER FABRICATION METHOD AND THE FILTER FORMED THEREBY 有权
标题翻译：过滤器制造方法及其形成的过滤器
公开(公告)号：US20130075326A1
公开(公告)日：2013-03-28
申请号：US13615042
申请日：2012-09-13
申请人： Yong Ju YUN , Han Young Yu , Yark Yeon Kim , Won Ick Jang
发明人： Yong Ju YUN , Han Young Yu , Yark Yeon Kim , Won Ick Jang
IPC分类号： B29C47/08
CPC分类号： B29C47/30 , B29C37/0067 , B29C47/0009 , D01D5/0038 , D01D5/0076
摘要： Provided are a filter fabrication method and the filter formed thereby. In this method, a three-dimensional graphene polymer complex filter can be easily fabricated. By forming various patterns at a surface of a collector, patterns can be simply formed at a surface of a filter. This provides advantages at control of pressure difference which can be one of the very important factors necessary for designing and fabricating a filter. Since the filter includes graphene particles homogeneously combined to the polymer nanofiber, the filter can represent a superior antibiosis.
摘要翻译：提供了一种过滤器制造方法和由此形成的过滤器。在该方法中，可以容易地制造三维石墨烯聚合物络合物过滤器。通过在集电体的表面形成各种图案，可以简单地在滤光器的表面形成图案。这提供了控制压力差的优点，其可以是设计和制造过滤器所必需的非常重要的因素之一。由于过滤器包括与聚合物纳米纤维均匀组合的石墨烯颗粒，所以过滤器可以表现出优异的抗菌性。

30. 发明授权

US07947585B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07947585B2
公开(公告)日：2011-05-24
申请号：US12090891
申请日：2006-12-04
申请人： In Bok Baek , Seong Jae Lee , Jong Heon Yang , Chang Geun Ahn , Han Young Yu , Ki Ju Im
发明人： In Bok Baek , Seong Jae Lee , Jong Heon Yang , Chang Geun Ahn , Han Young Yu , Ki Ju Im
IPC分类号： H01L21/22
CPC分类号： H01L29/66439 , B82Y10/00 , H01L21/0273 , H01L21/28123 , H01L29/66484 , H01L29/66545 , H01L29/66575 , H01L29/66772 , H01L29/7613 , H01L29/7831
摘要： Provided is a method of manufacturing a semiconductor device in which properties of photoresist through a lithography process are changed to form a dummy structure, and the structure is applied to a process of forming a gate electrode. The method includes the steps of: forming a buffer layer on the top of a semiconductor substrate; applying an inorganic photoresist on the buffer layer, and forming a photoresist pattern using a lithography process; thermally treating the photoresist pattern using a predetermined gas; uniformly depositing an insulating layer on the thermally treated structure, and etching the deposited layer by the deposited thickness in order to expose the thermally treated photoresist pattern; depositing an insulating layer on the etched structure, and etching the deposited insulating layer to expose the thermally treated photoresist pattern; removing the exposed photoresist pattern using an etching process; forming a gate oxide layer in the portion in which the photoresist pattern is removed; and forming a gate electrode on the gate oxide layer. Accordingly, in forming a structure for manufacturing a nano-sized device, the properties of the layer formed by a lithography process are improved through thermal treatment, and thus the structure used to manufacture various devices can be easily formed.
摘要翻译：提供了通过光刻处理改变光致抗蚀剂的特性以形成虚拟结构的半导体器件的制造方法，并且将该结构应用于形成栅电极的工艺。该方法包括以下步骤：在半导体衬底的顶部上形成缓冲层; 在缓冲层上施加无机光致抗蚀剂，并使用光刻工艺形成光致抗蚀剂图案; 使用预定气体热处理光刻胶图案; 在热处理结构上均匀沉积绝缘层，并通过沉积的厚度蚀刻沉积层，以暴露热处理的光致抗蚀剂图案; 在蚀刻的结构上沉积绝缘层，并蚀刻沉积的绝缘层以暴露热处理的光致抗蚀剂图案; 使用蚀刻工艺去除曝光的光致抗蚀剂图案; 在除去光致抗蚀剂图案的部分中形成栅氧化层; 以及在所述栅极氧化物层上形成栅电极。因此，在形成纳米尺寸器件的制造结构时，通过热处理提高了通过光刻工艺形成的层的性质，因此可以容易地形成用于制造各种器件的结构。

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