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21. 发明申请

US20100047581A1 ACTIN FILAMENT ASSOCIATED NANODEVICES 审中-公开
标题翻译： ACTIN FILAMENT相关纳米器件
公开(公告)号：US20100047581A1
公开(公告)日：2010-02-25
申请号：US12197725
申请日：2008-08-25
申请人： Seunghun Hong , Kyung-Eun Byun
发明人： Seunghun Hong , Kyung-Eun Byun
IPC分类号： B32B9/00 , G03F7/20 , B05D5/00
CPC分类号： B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F7/0002 , H01L51/0093 , Y10T428/30
摘要： Techniques for assembling actin filaments on a substrate and nanodevices including actin filaments are provided.
摘要翻译：提供了将肌动蛋白丝组装在基质和包括肌动蛋白丝的纳米装置上的技术。

22. 发明申请

US20100045610A1 TRANSPARENT CONDUCTIVE FILMS 审中-公开
标题翻译：透明导电膜
公开(公告)号：US20100045610A1
公开(公告)日：2010-02-25
申请号：US12195356
申请日：2008-08-20
申请人： Seunghun Hong , Moon Gyu Sung
发明人： Seunghun Hong , Moon Gyu Sung
IPC分类号： G06F3/041 , B32B9/00 , B05D5/00
CPC分类号： G06F3/0414 , G06F3/045 , H01B1/04 , H01B1/08
摘要： A transparent conductive film comprised of a carbon nanotube network and indium tin oxide composite and a method for manufacturing the transparent conductive film are provided.
摘要翻译：提供由碳纳米管网络和氧化铟锡复合物构成的透明导电膜和制造透明导电膜的方法。

23. 发明授权

US08350602B2 Reconfigurable semiconductor device 有权
标题翻译：可重构半导体器件
公开(公告)号：US08350602B2
公开(公告)日：2013-01-08
申请号：US13089206
申请日：2011-04-18
申请人： Seunghun Hong , Sung Myung , Kwang Heo
发明人： Seunghun Hong , Sung Myung , Kwang Heo
IPC分类号： H03K3/01
CPC分类号： H01L29/7883 , B82Y10/00 , H01L21/28273 , H01L29/42328 , H01L29/42332 , H01L29/7887
摘要： A reconfigurable semiconductor device is disclosed. The semiconductor device includes a substrate, a first insulating material formed on the substrate, two channels having different polarities, a plurality of terminal electrodes formed on the insulating material and coupled in common with the channels at their opposite ends, a second insulating material formed on the terminal electrodes, and a control gate formed on the second insulating material. The channels have different polarity and a charge storage layer is formed inside the second insulating material. The control gate is applied with a forward bias or a reverse bias and then the bias is cut off. The voltage-current characteristics of the semiconductor device are changed according to an electrical charge created in the charge storage layer.
摘要翻译：公开了可重新配置的半导体器件。该半导体器件包括基板，形成在基板上的第一绝缘材料，具有不同极性的两个通道，形成在绝缘材料上的多个端子电极，并在其相对端与通道共同地连接，第二绝缘材料形成在端子电极和形成在第二绝缘材料上的控制栅极。通道具有不同的极性，并且在第二绝缘材料内形成电荷存储层。控制栅极被施加正向偏压或反向偏压，然后偏压被切断。半导体器件的电压 - 电流特性根据在电荷存储层中产生的电荷而改变。

24. 发明授权

US07968935B2 Reconfigurable semiconductor device 有权
标题翻译：可重构半导体器件
公开(公告)号：US07968935B2
公开(公告)日：2011-06-28
申请号：US12197961
申请日：2008-08-25
申请人： Seunghun Hong , Sung Myung , Kwang Heo
发明人： Seunghun Hong , Sung Myung , Kwang Heo
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/7883 , B82Y10/00 , H01L21/28273 , H01L29/42328 , H01L29/42332 , H01L29/7887
摘要： A reconfigurable semiconductor device is disclosed. The semiconductor device includes a substrate, a first insulating material formed on the substrate, two channels having different polarities, a plurality of terminal electrodes formed on the insulating material and coupled in common with the channels at their opposite ends, a second insulating material formed on the terminal electrodes, and a control gate formed on the second insulating material. The channels have different polarity and a charge storage layer is formed inside the second insulating material. The control gate is applied with a forward bias or a reverse bias and then the bias is cut off. The voltage-current characteristics of the semiconductor device are changed according to an electrical charge created in the charge storage layer.
摘要翻译：公开了可重新配置的半导体器件。该半导体器件包括基板，形成在基板上的第一绝缘材料，具有不同极性的两个通道，形成在绝缘材料上的多个端子电极，并在其相对端与通道共同地连接，第二绝缘材料形成在端子电极和形成在第二绝缘材料上的控制栅极。通道具有不同的极性，并且在第二绝缘材料内形成电荷存储层。控制栅极被施加正向偏压或反向偏压，然后偏压被切断。半导体器件的电压 - 电流特性根据在电荷存储层中产生的电荷而改变。

25. 发明申请

US20100044777A1 RECONFIGURABLE SEMICONDUCTOR DEVICE 有权
标题翻译：可重构半导体器件
公开(公告)号：US20100044777A1
公开(公告)日：2010-02-25
申请号：US12197961
申请日：2008-08-25
申请人： Seunghun Hong , Sung Myung , Kwang Heo
发明人： Seunghun Hong , Sung Myung , Kwang Heo
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/7883 , B82Y10/00 , H01L21/28273 , H01L29/42328 , H01L29/42332 , H01L29/7887
摘要： A reconfigurable semiconductor device is disclosed. The semiconductor device includes a substrate, a first insulating material formed on the substrate, two channels having different polarities, a plurality of terminal electrodes formed on the insulating material and coupled in common with the channels at their opposite ends, a second insulating material formed on the terminal electrodes, and a control gate formed on the second insulating material. The channels have different polarity and a charge storage layer is formed inside the second insulating material. The control gate is applied with a forward bias or a reverse bias and then the bias is cut off. The voltage-current characteristics of the semiconductor device are changed according to an electrical charge created in the charge storage layer.
摘要翻译：公开了可重新配置的半导体器件。该半导体器件包括基板，形成在基板上的第一绝缘材料，具有不同极性的两个通道，形成在绝缘材料上的多个端子电极，并在其相对端与通道共同地连接，第二绝缘材料形成在端子电极和形成在第二绝缘材料上的控制栅极。通道具有不同的极性，并且在第二绝缘材料内形成电荷存储层。控制栅极被施加正向偏压或反向偏压，然后偏压被切断。半导体器件的电压 - 电流特性根据在电荷存储层中产生的电荷而改变。

26. 发明申请

US20100028814A1 MANUFACTURING CROSS-STRUCTURES OF NANOSTRUCTURES 有权
标题翻译：制造纳米结构的交叉结构
公开(公告)号：US20100028814A1
公开(公告)日：2010-02-04
申请号：US12238306
申请日：2008-09-25
申请人： Seunghun Hong , Sung Young Park , Seon Namgung
发明人： Seunghun Hong , Sung Young Park , Seon Namgung
IPC分类号： G03F7/20 , G03B27/42
CPC分类号： B82B3/00 , B82Y30/00 , B82Y40/00 , Y10S977/742 , Y10S977/762 , Y10S977/773
摘要： Techniques for manufacturing cross-structures of nanostructures, such as nanowires and carbon nanotubes are provided. In one embodiment, a method for manufacturing cross-structures of nanostructures include providing a substrate, patterning a first mask layer on the substrate, adsorbing first nanostructures onto surface regions of the substrate where the first mask layer does not exist, removing the first mask layer from the substrate, patterning a second mask layer on the substrate to which the first nanostructures are adsorbed, and adsorbing second nanostructures onto the surface regions of the substrate where the second mask layer does not exist, under conditions effective to manufacture cross-structures of nanostructures on the substrate.
摘要翻译：提供了用于制造纳米结构的交叉结构的技术，例如纳米线和碳纳米管。在一个实施例中，一种用于制造纳米结构的交叉结构的方法包括：提供衬底，在衬底上图案化第一掩模层，将第一纳米结构吸附到不存在第一掩模层的衬底的表面区域上，去除第一掩模层在衬底上形成第二掩模层，在其上吸附有第一纳米结构的衬底上，在有效制造纳米结构的交叉结构的条件下，将第二纳米结构吸附到不存在第二掩模层的衬底的表面区域上在基板上。

27. 发明授权

US07014823B2 Biomolecular-based actuator 失效
标题翻译：基于生物分子的致动器
公开(公告)号：US07014823B2
公开(公告)日：2006-03-21
申请号：US10688078
申请日：2003-10-17
申请人： P. Bryant Chase , Seunghun Hong , Timothy S. Moerland , Stephan Von Molnar , Peng Xiong
发明人： P. Bryant Chase , Seunghun Hong , Timothy S. Moerland , Stephan Von Molnar , Peng Xiong
IPC分类号： B01J8/02 , C12M1/00 , C12N9/16 , C07K14/00
CPC分类号： H02N11/006 , B82Y5/00 , B82Y15/00 , B82Y30/00
摘要： This invention relates to actuators having biologically-based components, and methods of making and using the same. The actuator of the invention has a movable member that moves substantially linearly as a result of a biomolecular interaction of biologically-based components within the actuator. These actuators can be utilized in nanoscale mechanical devices to, e.g., pump fluids, open and close valves, and provide translational movement.
摘要翻译：本发明涉及具有基于生物学的部件的致动器及其制造和使用方法。本发明的致动器具有可移动构件，其作为致动器内基于生物基的组分的生物分子相互作用的结果基本上线性地移动。这些致动器可以用于纳米尺度的机械装置，例如泵流体，打开和关闭阀，并提供平移运动。

28. 发明申请

US20050191434A1 Nanolithography methods and products therefor and produced thereby 有权
标题翻译：纳米光刻方法和产品，由此生产
公开(公告)号：US20050191434A1
公开(公告)日：2005-09-01
申请号：US11100483
申请日：2005-04-07
申请人： Chad Mirkin , Seunghun Hong , Vinayak Dravid
发明人： Chad Mirkin , Seunghun Hong , Vinayak Dravid
IPC分类号： B05D1/00 , B05D1/18 , B05D1/26 , B82B3/00 , G01Q60/00 , G01Q70/16 , G01Q80/00 , G03F7/00 , G03F7/16 , B05D5/00
CPC分类号： G03F7/0002 , B05D1/007 , B05D1/185 , B05D1/26 , B82B3/00 , G01Q80/00 , G03F7/165 , Y10S977/85 , Y10S977/857 , Y10S977/86 , Y10S977/862 , Y10S977/863 , Y10S977/878 , Y10S977/882 , Y10S977/884 , Y10S977/885 , Y10S977/886
摘要： In one aspect, a method of nanolithography is provided using a driving force to control the movement of a deposition compound from a scanning probe microscope tip to a substrate. Another aspect of the invention provides a tip for use in nanolithography having an internal cavity and an aperture restricting movement of a deposition compound from the tip to the substrate. The rate and extent of movement of the deposition compound through the aperture is controlled by a driving force.
摘要翻译：一方面，使用驱动力来提供纳米光刻的方法，以控制沉积化合物从扫描探针显微镜尖端到基底的移动。本发明的另一方面提供了一种用于纳米光刻的尖端，其具有内腔和限制沉积化合物从尖端到基底的运动的孔。沉积化合物通过孔的运动速度和程度由驱动力控制。

29. 发明授权

US08063430B2 Semiconductor devices and methods of manufacturing and operating same 有权
标题翻译：半导体器件及其制造和操作方法相同
公开(公告)号：US08063430B2
公开(公告)日：2011-11-22
申请号：US12289055
申请日：2008-10-20
申请人： Seunghun Hong , Sung Myung , Jiwoon Im , Minbaek Lee
发明人： Seunghun Hong , Sung Myung , Jiwoon Im , Minbaek Lee
IPC分类号： H01L29/788
CPC分类号： H01L29/792 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/42332 , H01L29/42348 , H01L29/7881 , H01L51/0048 , H01L51/0541
摘要： A semiconductor device and methods of manufacturing and operating the semiconductor device may be disclosed. The semiconductor device may comprise different nanostructures. The semiconductor device may have a first element formed of nanowires and a second element formed of nanoparticles. The nanowires may be ambipolar carbon nanotubes (CNTs). The first element may be a channel layer. The second element may be a charge trap layer. In this regard, the semiconductor device may be a transistor or a memory device.
摘要翻译：可以公开半导体器件以及制造和操作半导体器件的方法。半导体器件可以包括不同的纳米结构。半导体器件可以具有由纳米线形成的第一元件和由纳米粒子形成的第二元件。纳米线可以是双极碳纳米管（CNTs）。第一元件可以是沟道层。第二元件可以是电荷陷阱层。在这方面，半导体器件可以是晶体管或存储器件。

30. 发明申请

US20110210765A1 RECONFIGURABLE SEMICONDUCTOR DEVICE 有权
标题翻译：可重构半导体器件
公开(公告)号：US20110210765A1
公开(公告)日：2011-09-01
申请号：US13089206
申请日：2011-04-18
申请人： Seunghun Hong , Sung Myung , Kwang Heo
发明人： Seunghun Hong , Sung Myung , Kwang Heo
IPC分类号： H03K3/01
CPC分类号： H01L29/7883 , B82Y10/00 , H01L21/28273 , H01L29/42328 , H01L29/42332 , H01L29/7887
摘要： A reconfigurable semiconductor device is disclosed. The semiconductor device includes a substrate, a first insulating material formed on the substrate, two channels having different polarities, a plurality of terminal electrodes formed on the insulating material and coupled in common with the channels at their opposite ends, a second insulating material formed on the terminal electrodes, and a control gate formed on the second insulating material. The channels have different polarity and a charge storage layer is formed inside the second insulating material. The control gate is applied with a forward bias or a reverse bias and then the bias is cut off. The voltage-current characteristics of the semiconductor device are changed according to an electrical charge created in the charge storage layer.
摘要翻译：公开了可重新配置的半导体器件。该半导体器件包括基板，形成在基板上的第一绝缘材料，具有不同极性的两个通道，形成在绝缘材料上的多个端子电极，并在其相对端与通道共同地连接，第二绝缘材料形成在端子电极和形成在第二绝缘材料上的控制栅极。通道具有不同的极性，并且在第二绝缘材料内形成电荷存储层。控制栅极被施加正向偏压或反向偏压，然后偏压被切断。半导体器件的电压 - 电流特性根据在电荷存储层中产生的电荷而改变。

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