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21. 发明申请

US20090321873A1 LOW-COST SUBSTRATES HAVING HIGH-RESISTIVITY PROPERTIES AND METHODS FOR THEIR MANUFACTURE 有权
标题翻译：具有高电阻特性的低成本基板及其制造方法
公开(公告)号：US20090321873A1
公开(公告)日：2009-12-31
申请号：US12470152
申请日：2009-05-21
申请人： Bich-Yen Nguyen , Carlos Mazure
发明人： Bich-Yen Nguyen , Carlos Mazure
IPC分类号： H01L27/12 , H01L21/20
CPC分类号： H01L21/76251
摘要： In one embodiment, the invention provides substrates that are structured so that devices fabricated in a top layer thereof have properties similar to the same devices fabricated in a standard high resistivity substrate. Substrates of the invention include a support having a standard resistivity, a semiconductor layer arranged on the support substrate having a high-resistivity, preferably greater than about 1000 Ohms-cm, an insulating layer arranged on the high-resistivity layer, and a top layer arranged on the insulating layer. The invention also provides methods for manufacturing such substrates.
摘要翻译：在一个实施例中，本发明提供了被构造成使得在其顶层中制造的器件具有与在标准高电阻率衬底中制造的相同器件相似的性质的衬底。本发明的基板包括具有标准电阻率的支撑体，布置在支撑基板上的具有高电阻率，优选地大于约1000欧姆 - 厘米的半导体层，设置在高电阻率层上的绝缘层，以及顶层布置在绝缘层上。本发明还提供了制造这种基底的方法。

22. 发明授权

US08987114B2 Bonded semiconductor structures and method of forming same 有权
标题翻译：结合半导体结构及其形成方法
公开(公告)号：US08987114B2
公开(公告)日：2015-03-24
申请号：US13637565
申请日：2011-02-22
申请人： Carlos Mazure , Bich-Yen Nguyen , Mariam Sadaka
发明人： Carlos Mazure , Bich-Yen Nguyen , Mariam Sadaka
IPC分类号： H01L21/00 , H01L27/06 , H01L21/18 , H01L21/822 , H01L21/02
CPC分类号： H01L27/0688 , H01L21/02532 , H01L21/0262 , H01L21/02667 , H01L21/187 , H01L21/8221 , H01L2924/00011 , H01L2224/80001
摘要： Methods of forming semiconductor structures include transferring a portion (116a) of a donor structure to a processed semiconductor structure (102) that includes at least one non-planar surface. An amorphous film (144) may be formed over at least one non-planar surface of the bonded semiconductor structure, and the amorphous film may be planarized to form one or more planarized surfaces. Semiconductor structures include a bonded semiconductor structure having at least one non-planar surface, and an amorphous film disposed over the at least one non-planar surface. The bonded semiconductor structure may include a processed semiconductor structure and a portion of a single crystal donor structure attached to a non-planar surface of the processed semiconductor structure.
摘要翻译：形成半导体结构的方法包括将施主结构的部分（116a）转移到包括至少一个非平面表面的经处理的半导体结构（102）。可以在结合的半导体结构的至少一个非平面表面上形成非晶膜（144），并且可以将非晶膜平坦化以形成一个或多个平坦化表面。半导体结构包括具有至少一个非平面表面的键合半导体结构和设置在所述至少一个非平面表面上的非晶膜。键合的半导体结构可以包括处理的半导体结构和附接到处理的半导体结构的非平面表面的单晶体施主结构的一部分。

23. 发明授权

US08013417B2 Low cost substrates and method of forming such substrates 有权
标题翻译：低成本基板和形成这种基板的方法
公开(公告)号：US08013417B2
公开(公告)日：2011-09-06
申请号：US12469436
申请日：2009-05-20
申请人： Bich-Yen Nguyen , Carlos Mazure
发明人： Bich-Yen Nguyen , Carlos Mazure
IPC分类号： H01L21/70
CPC分类号： H01L21/76256 , H01L21/76254 , Y10T428/24851
摘要： In one embodiment, the invention provides engineered substrates having a support with surface pits, an intermediate layer of amorphous material arranged on the surface of the support so as to at least partially fill the surface pits, and a top layer arranged on the intermediate layer. The invention also provides methods for manufacturing the engineered substrates which deposit an intermediate layer on a pitted surface of a support so as to at least partially fill the surface pits, then anneal the intermediate layer, then assemble a donor substrate with the annealed intermediate layer to form an intermediate structure, and finally reduce the thickness of the donor substrate portion of the intermediate structure in order to form the engineered substrate.
摘要翻译：在一个实施例中，本发明提供了具有表面凹坑的支撑件的工程衬底，布置在支撑件表面上以至少部分地填充表面凹坑的非晶材料的中间层以及布置在中间层上的顶层。本发明还提供了用于制造工程衬底的方法，其将中间层沉积在支撑体的凹坑表面上，以便至少部分地填充表面凹坑，然后退火中间层，然后将施加衬底与退火的中间层组装成形成中间结构，并且最终减小中间结构的施主衬底部分的厚度以形成工程衬底。

24. 发明申请

US20110042780A1 METHODS OF MANUFACTURING SEMICONDUCTOR STRUCTURES AND SEMICONDUCTOR STRUCTURES OBTAINED BY SUCH METHODS 审中-公开
标题翻译：制造半导体结构的方法和采用这种方法获得的半导体结构
公开(公告)号：US20110042780A1
公开(公告)日：2011-02-24
申请号：US12989532
申请日：2009-05-18
申请人： Bich-Yen Nguyen , Carlos Mazure
发明人： Bich-Yen Nguyen , Carlos Mazure
IPC分类号： H01L21/30 , H01L29/02
CPC分类号： H01L21/76254 , H01L21/76256
摘要： In preferred embodiments, this invention provides a semiconductor structure that has a semi-conducting support, an insulating layer arranged on a portion of the support and a semi-conducting superficial layer arranged on the insulating layer. Electronic devices can be formed in the superficial layer and also in the exposed portion of the semi-conducting bulk region of the substrate not covered by the insulating layer. The invention also provides methods of fabricating such semiconductor structures which, starting from a substrate that includes a semi-conducting superficial layer arranged on a continuous insulating layer both of which being arranged on a semi-conducting support, by transforming at least one selected region of a substrate so as to form an exposed semi-conducting bulk region of the substrate.
摘要翻译：在优选实施例中，本发明提供一种半导体结构，其具有半导电支撑件，布置在支撑件的一部分上的绝缘层和布置在绝缘层上的半导电表面层。电子器件可以形成在表面层中，也可以形成在衬底的半导体本体区域的未被绝缘层覆盖的露出部分中。本发明还提供了制造这样的半导体结构的方法，其从包括布置在连续绝缘层上的半导电表面层的衬底开始，两者均布置在半导电支撑件上，通过将至少一个选定区域基板，以形成基板的暴露的半导体本体区域。

25. 发明授权

US07977705B2 Low-cost substrates having high-resistivity properties and methods for their manufacture 有权
标题翻译：具有高电阻率特性的低成本基板及其制造方法
公开(公告)号：US07977705B2
公开(公告)日：2011-07-12
申请号：US12470152
申请日：2009-05-21
申请人： Bich-Yen Nguyen , Carlos Mazure
发明人： Bich-Yen Nguyen , Carlos Mazure
IPC分类号： H01L29/02
CPC分类号： H01L21/76251
摘要： In one embodiment, the invention provides substrates that are structured so that devices fabricated in a top layer thereof have properties similar to the same devices fabricated in a standard high resistivity substrate. Substrates of the invention include a support having a standard resistivity, a semiconductor layer arranged on the support substrate having a high-resistivity, preferably greater than about 1000 Ohms-cm, an insulating layer arranged on the high-resistivity layer, and a top layer arranged on the insulating layer. The invention also provides methods for manufacturing such substrates.
摘要翻译：在一个实施例中，本发明提供了被构造成使得在其顶层中制造的器件具有与在标准高电阻率衬底中制造的相同器件相似的性质的衬底。本发明的基板包括具有标准电阻率的支撑体，布置在支撑基板上的具有高电阻率，优选地大于约1000欧姆 - 厘米的半导体层，布置在高电阻率层上的绝缘层，以及顶层布置在绝缘层上。本发明还提供了制造这种基底的方法。

26. 发明申请

US20080014712A1 METHOD FOR DIRECT BONDING TWO SEMICONDUCTOR SUBSTRATES 有权
标题翻译：用于直接结合两个半导体衬底的方法
公开(公告)号：US20080014712A1
公开(公告)日：2008-01-17
申请号：US11624070
申请日：2007-01-17
申请人： Konstantin Bourdelle , Carlos Mazure , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
发明人： Konstantin Bourdelle , Carlos Mazure , Olivier Rayssac , Pierre Rayssac , Gisele Rayssac
IPC分类号： H01L21/30
CPC分类号： H01L21/187
摘要： The invention provides methods of direct bonding substrates at least one of which includes a layer of semiconductor material that extends over its front face or in the proximity thereof. The provided methods include, prior to bonding, subjecting the bonding face of at least one substrate comprising a semiconductor material to selected heat treatment at a selected temperature and in a selected gaseous atmosphere. The bonded substrates are useful for electronic, optic, or optoelectronic applications.
摘要翻译：本发明提供了直接接合基底的方法，其中至少一个包括在其前表面或其附近延伸的半导体材料层。所提供的方法包括，在接合之前，使包含半导体材料的至少一个衬底的结合面在所选择的温度和选定的气体气氛中进行选择的热处理。键合的衬底可用于电子，光学或光电子应用。

27. 发明申请

US20060099779A1 Method for transferring a thin layer including a controlled disturbance of a crystalline structure 有权
标题翻译：用于转移包含晶体结构受控干扰的薄层的方法
公开(公告)号：US20060099779A1
公开(公告)日：2006-05-11
申请号：US11305444
申请日：2005-12-16
申请人： Ian Cayrefourcq , Carlos Mazure , Konstantin Bourdelle
发明人： Ian Cayrefourcq , Carlos Mazure , Konstantin Bourdelle
IPC分类号： H01L21/20 , H01L21/28
CPC分类号： H01L21/76254
摘要： The present invention relates to a method for transferring a thin useful layer from a donor substrate having an ordered crystalline structure to a receiver substrate. The method includes creation of a weakened zone in the donor substrate to define the layer to be transferred from the donor substrate. The crystalline structure of a surface region of the donor substrate is disturbed so as to create a disturbed superficial region within the thickness of the donor substrate, and thus define a disturbance interface between the disturbed superficial region and a subjacent region of the donor substrate for which the crystalline structure remains unchanged. Next, the donor substrate is subjected to a recrystallization annealing in order to at least partial recrystallize of the disturbed region, starting from the crystalline structure of the subjacent region of the donor substrate, and to create a zone of crystalline defects in the plane of the disturbance interface. One or several species are introduced into the thickness of the donor substrate to create the weakened zone, with the species being introduced with introduction parameters that are adjusted to introduce a maximum number of species at the zone of crystalline defects.
摘要翻译：本发明涉及一种从具有有序晶体结构的施主衬底向接收衬底转移薄有用层的方法。该方法包括在施主衬底中产生弱化区以限定要从供体衬底转移的层。施主衬底的表面区域的晶体结构受到干扰，从而在施主衬底的厚度内产生干扰的表面区域，从而限定受干扰的表面区域和施主衬底的下部区域之间的干扰界面，晶体结构保持不变。接下来，对施主衬底进行再结晶退火，以便从施主衬底的下部区域的结晶结构开始至少部分地重新结晶受阻区域，并在该平面内产生晶体缺陷区域扰动界面。将一个或多个物质引入施主衬底的厚度以产生弱化区域，其中引入物质，引入参数被调整以在晶体缺陷区域引入最大数量的物质。

28. 发明授权

US07833877B2 Method for producing a semiconductor substrate 有权
标题翻译：半导体基板的制造方法
公开(公告)号：US07833877B2
公开(公告)日：2010-11-16
申请号：US11877456
申请日：2007-10-23
申请人： Konstantin Bourdelle , Carlos Mazure
发明人： Konstantin Bourdelle , Carlos Mazure
IPC分类号： H01L21/30
CPC分类号： H01L21/02667 , H01L21/2022 , H01L21/76254
摘要： This invention relates to a method for producing a substrate by transferring a layer of a material from a donor substrate to a support substrate, and then by removing a part of the layer of material to form the thin layer. The step of removing a part of the layer of material to form the thin layer comprises forming an amorphous layer in a part of the thin layer, and then recrystallizing the amorphous layer.
摘要翻译：本发明涉及一种通过将材料层从供体衬底转移到支撑衬底，然后通过移除材料层的一部分以形成薄层来制造衬底的方法。除去材料层的一部分以形成薄层的步骤包括在薄层的一部分中形成非晶层，然后使非晶层重结晶。

29. 发明授权

US07799651B2 Method of treating interface defects in a substrate 有权
标题翻译：处理基材界面缺陷的方法
公开(公告)号：US07799651B2
公开(公告)日：2010-09-21
申请号：US12165365
申请日：2008-06-30
申请人： Carlos Mazure , Ian Cayrefourcq , Konstantin Bourdelle
发明人： Carlos Mazure , Ian Cayrefourcq , Konstantin Bourdelle
IPC分类号： H01L21/331
CPC分类号： H01L21/187 , H01L21/02381 , H01L21/02532 , H01L21/02667 , H01L21/26506 , H01L21/324 , H01L21/76254 , H01L29/045
摘要： The present invention relates to a method of treating a structure produced from semiconductor materials, wherein the structure includes a first and second substrates defining a common interface that has defects. The method includes forming a layer, called the disorganized layer, which includes the interface, in which at least a part of the crystal lattice is disorganized; and reorganizing the crystal lattice of the disorganized layer in order to force the defects back deeper into the first substrate.
摘要翻译：本发明涉及一种处理由半导体材料制成的结构的方法，其中该结构包括限定具有缺陷的公共接口的第一和第二基板。所述方法包括形成称为所述无组织层的层，所述层包括所述界面，其中所述晶格的至少一部分被混杂; 并重新组织无组织层的晶格，以迫使缺陷更深地进入第一衬底。

30. 发明授权

US07387947B2 Method for transferring a thin layer including a controlled disturbance of a crystalline structure 有权
标题翻译：用于转移包含晶体结构受控干扰的薄层的方法
公开(公告)号：US07387947B2
公开(公告)日：2008-06-17
申请号：US11305444
申请日：2005-12-16
申请人： Ian Cayrefourcq , Carlos Mazure , Konstantin Bourdelle
发明人： Ian Cayrefourcq , Carlos Mazure , Konstantin Bourdelle
IPC分类号： H01L21/20
CPC分类号： H01L21/76254
摘要： The present invention relates to a method for transferring a thin useful layer from a donor substrate having an ordered crystalline structure to a receiver substrate. The method includes creation of a weakened zone in the donor substrate to define the layer to be transferred from the donor substrate. The crystalline structure of a surface region of the donor substrate is disturbed so as to create a disturbed superficial region within the thickness of the donor substrate, and thus define a disturbance interface between the disturbed superficial region and a subjacent region of the donor substrate for which the crystalline structure remains unchanged. Next, the donor substrate is subjected to a recrystallization annealing in order to at least partial recrystallize of the disturbed region, starting from the crystalline structure of the subjacent region of the donor substrate, and to create a zone of crystalline defects in the plane of the disturbance interface. One or several species are introduced into the thickness of the donor substrate to create the weakened zone, with the species being introduced with introduction parameters that are adjusted to introduce a maximum number of species at the zone of crystalline defects.
摘要翻译：本发明涉及一种从具有有序晶体结构的施主衬底向接收衬底转移薄有用层的方法。该方法包括在施主衬底中产生弱化区以限定要从供体衬底转移的层。施主衬底的表面区域的晶体结构受到干扰，从而在施主衬底的厚度内产生干扰的表面区域，从而限定受干扰的表面区域和施主衬底的下部区域之间的扰动界面，晶体结构保持不变。接下来，对施主衬底进行再结晶退火，以便从施主衬底的下部区域的结晶结构开始至少部分地重新结晶受阻区域，并在该平面内产生晶体缺陷区域扰动界面。将一个或多个物质引入施主衬底的厚度以产生弱化区域，其中引入物质，引入参数被调整以在晶体缺陷区域引入最大数量的物质。

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