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    • 23. 发明授权
    • LCD device with data/gate line pad electrodes and contact electrode including both a transparent conductive film and a metal layer interconnecting data link and data line through respective contact holes
    • 具有数据/栅极线焊盘电极的LCD器件和包括透明导电膜和金属层的接触电极,其通过相应的接触孔互连数据链路和数据线
    • US07626669B2
    • 2009-12-01
    • US11168315
    • 2005-06-29
    • Joo Soo LimWoong Sik Kim
    • Joo Soo LimWoong Sik Kim
    • G02F1/1345
    • G02F1/133555G02F1/13458G02F1/136227
    • The present invention relates to a transflective thin film transistor substrate and method of fabricating the same that is adaptive for simplifying its process. The liquid crystal display device includes: first and second substrates; a gate line on the first substrate; a gate insulating film on the first substrate; a data line crossing the gate line to define a pixel area; a thin film transistor connected to the gate line and the data line; an organic insulating film on the gate line, the data line and the thin film transistor, and having a transmission hole in the pixel area; a pixel electrode on the organic insulating film of the pixel area via the transmission hole and connected to the thin film transistor; and a reflective electrode on the pixel electrode having a same edge part as the pixel electrode or an edge part located at inner side from an edge part of the pixel electrode and exposing the pixel electrode of the transmission hole.
    • 半透反射薄膜晶体管基板及其制造方法技术领域本发明涉及半透射型薄膜晶体管基板及其制造方法,其适于简化其工艺。 液晶显示装置包括:第一和第二基板; 第一基板上的栅极线; 第一基板上的栅极绝缘膜; 穿过所述栅极线以限定像素区域的数据线; 连接到栅极线和数据线的薄膜晶体管; 栅极线上的有机绝缘膜,数据线和薄膜晶体管,并且在像素区域中具有透射孔; 通过透射孔在像素区域的有机绝缘膜上形成与薄膜晶体管连接的像素电极; 以及在像素电极上具有与像素电极相同的边缘部分的反射电极或位于像素电极的边缘部分的内侧的边缘部分,并暴露透射孔的像素电极。
    • 26. 发明申请
    • TRANSFLECTIVE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    • 转移液晶显示装置及其制造方法
    • US20120142245A1
    • 2012-06-07
    • US13354676
    • 2012-01-20
    • Dong Guk KIMWon Seok KangJoo Soo Lim
    • Dong Guk KIMWon Seok KangJoo Soo Lim
    • H01J9/00
    • G02F1/136227G02F1/133555G02F1/136213G02F2001/136231G02F2201/40
    • A transflective type LCD device and a method for manufacturing the same is disclosed, in which an aperture ratio of a reflective part is improved, and manufacturing process is simplified by decreasing the number of masks for forming contact holes. The transflective type LCD device includes a plurality of gate and data lines crossing each other, defining a plurality of pixel regions; a thin film transistor at a crossing point of the gate and data lines; a lower storage electrode formed by one portion of a preceding gate line, and an upper storage electrode above the lower storage electrode having a gate insulating layer in between; a transmitting electrode in contact the upper storage electrode; and a reflective electrode in contact with the transmitting electrode in the reflective part of the pixel region wherein the transmitting electrode is in between the reflective electrode and the substrate.
    • 公开了一种透反式LCD装置及其制造方法,其中反射部件的开口率得到改善,并且通过减少形成接触孔的掩模的数量来简化制造工艺。 半透射型LCD装置包括彼此交叉的多个栅极和数据线,限定多个像素区域; 在栅极和数据线的交叉点处的薄膜晶体管; 由前一栅极线的一部分形成的下部存储电极和位于下部存储电极上方的上部存储电极,其间具有栅极绝缘层; 与上部存储电极接触的发射电极; 以及在像素区域的反射部分中与发射电极接触的反射电极,其中发射电极位于反射电极和衬底之间。
    • 27. 发明授权
    • Transflective liquid crystal display device and method for manufacturing the same
    • 半透射型液晶显示装置及其制造方法
    • US08115894B2
    • 2012-02-14
    • US12289074
    • 2008-10-20
    • Dong Guk KimWon Seok KangJoo Soo Lim
    • Dong Guk KimWon Seok KangJoo Soo Lim
    • G02F1/1335
    • G02F1/136227G02F1/133555G02F1/136213G02F2001/136231G02F2201/40
    • A transflective type LCD device and a method for manufacturing the same is disclosed, in which an aperture ratio of a reflective part is improved, and manufacturing process is simplified by decreasing the number of masks for forming contact holes. The transflective type LCD device includes a plurality of gate and data lines crossing each other, defining a plurality of pixel regions; a thin film transistor at a crossing point of the gate and data lines; a lower storage electrode formed by one portion of a preceding gate line, and an upper storage electrode above the lower storage electrode having a gate insulating layer in between; a transmitting electrode in contact the upper storage electrode; and a reflective electrode in contact with the transmitting electrode in the reflective part of the pixel region wherein the transmitting electrode is in between the reflective electrode and the substrate.
    • 公开了一种透反式LCD装置及其制造方法,其中反射部件的开口率得到改善,并且通过减少形成接触孔的掩模的数量来简化制造工艺。 半透射型LCD装置包括彼此交叉的多个栅极和数据线,限定多个像素区域; 在栅极和数据线的交叉点处的薄膜晶体管; 由前一栅极线的一部分形成的下部存储电极和位于下部存储电极上方的上部存储电极,其间具有栅极绝缘层; 与上部存储电极接触的发射电极; 以及在像素区域的反射部分中与发射电极接触的反射电极,其中发射电极位于反射电极和衬底之间。
    • 29. 发明申请
    • Transflective liquid crystal display device and method for manufacturing the same
    • 半透射型液晶显示装置及其制造方法
    • US20090066868A1
    • 2009-03-12
    • US12289074
    • 2008-10-20
    • Dong Guk KimWon Seok KangJoo Soo Lim
    • Dong Guk KimWon Seok KangJoo Soo Lim
    • G02F1/1335G02F1/133
    • G02F1/136227G02F1/133555G02F1/136213G02F2001/136231G02F2201/40
    • A transflective type LCD device and a method for manufacturing the same is disclosed, in which an aperture ratio of a reflective part is improved, and manufacturing process is simplified by decreasing the number of masks for forming contact holes. The transflective type LCD device includes a plurality of gate and data lines crossing each other, defining a plurality of pixel regions; a thin film transistor at a crossing point of the gate and data lines; a lower storage electrode formed by one portion of a preceding gate line, and an upper storage-electrode above the lower storage electrode having a gate insulating layer in between; a transmitting electrode in contact the upper storage electrode; and a reflective electrode in contact with the transmitting electrode in the reflective part of the pixel region wherein the transmitting electrode is in between the reflective electrode and the substrate.
    • 公开了一种透反式LCD装置及其制造方法,其中反射部件的开口率得到改善,并且通过减少形成接触孔的掩模的数量来简化制造工艺。 半透射型LCD装置包括彼此交叉的多个栅极和数据线,限定多个像素区域; 在栅极和数据线的交叉点处的薄膜晶体管; 由前一栅极线的一部分形成的下部存储电极和位于其下方的栅极绝缘层的下部存储电极之上的上部存储电极; 与上部存储电极接触的发射电极; 以及在像素区域的反射部分中与发射电极接触的反射电极,其中发射电极位于反射电极和衬底之间。