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    • 22. 发明申请
    • FLASH MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    • 闪存存储器件及其制造方法
    • US20080067579A1
    • 2008-03-20
    • US11847668
    • 2007-08-30
    • Joo-Hyeon Lee
    • Joo-Hyeon Lee
    • H01L29/788H01L21/3205
    • H01L29/7881H01L29/42324H01L29/513H01L29/6656
    • A method for manufacturing a flash memory device includes: a) forming a stack gate pattern composed of a tunnel oxide layer, a floating gate, ONO layers, and a control gate on a semiconductor substrate; b) conformably forming a first sidewall oxide layer made of a silicon oxide layer along both sidewalls of the stack gate pattern; c) performing a plasma nitride process for forming a nitride barrier layer in the first sidewall oxide layer; d) forming a sidewall nitride layer on the first sidewall oxide layer; e) conformably forming a second sidewall oxide layer on the sidewall nitride layer; and f) performing an etching process for forming a spacer which includes the first sidewall oxide layer, the nitride barrier layer, the sidewall nitride layer, and the second sidewall oxide layer. The flash memory device prevents data from being lost via the spacer equipped with a nitride barrier layer, resulting in increased reliability of a desired flash memory device.
    • 一种闪存器件的制造方法,包括:a)在半导体衬底上形成由隧道氧化物层,浮栅,ONO层和控制栅极构成的堆叠栅极图案; b)沿堆叠栅极图案的两个侧壁顺序地形成由氧化硅层制成的第一侧壁氧化物层; c)执行用于在所述第一侧壁氧化物层中形成氮化物阻挡层的等离子体氮化物工艺; d)在第一侧壁氧化物层上形成侧壁氮化物层; e)在侧壁氮化物层上顺应地形成第二侧壁氧化物层; 以及f)执行用于形成包括所述第一侧壁氧化物层,所述氮化物阻挡层,所述侧壁氮化物层和所述第二侧壁氧化物层的间隔物的蚀刻工艺。 闪存器件防止通过配备有氮化物阻挡层的间隔件丢失数据,导致期望的闪存器件的可靠性增加。
    • 23. 发明授权
    • Method of manufacturing organic light emitting display device
    • 制造有机发光显示装置的方法
    • US08435810B2
    • 2013-05-07
    • US12929911
    • 2011-02-24
    • Joo-Hyeon Lee
    • Joo-Hyeon Lee
    • H01L21/84
    • H01L27/3246H01L27/326H01L51/5231H01L51/56H01L2227/323
    • A method of manufacturing an organic light emitting display device includes providing a panel including a first opening portion formed in a first substrate and a second opening portion spaced apart from the first opening portion, disposing a transmissive-window forming composition in the second opening portion, forming an organic layer in the first opening portion, forming a metal layer on the panel so as to cover the first opening portion and the second opening portion, and forming a transmissive window by volatilizing the transmissive-window forming composition to open a region of the metal layer corresponding to the second opening portion.
    • 一种制造有机发光显示装置的方法包括提供一种面板,其包括形成在第一基板中的第一开口部分和与第一开口部分间隔开的第二开口部分,在第二开口部分设置透射窗形成组合物, 在所述第一开口部中形成有机层,在所述面板上形成金属层,以覆盖所述第一开口部和所述第二开口部,并且通过使所述透射窗形成组合物挥发来形成透射窗, 金属层对应于第二开口部分。
    • 25. 发明授权
    • Flash memory device and method for manufacturing the same
    • 闪存装置及其制造方法
    • US07618862B2
    • 2009-11-17
    • US11847668
    • 2007-08-30
    • Joo-Hyeon Lee
    • Joo-Hyeon Lee
    • H01L21/336H01L21/3205H01L21/28
    • H01L29/7881H01L29/42324H01L29/513H01L29/6656
    • A method for manufacturing a flash memory device includes: a) forming a stack gate pattern composed of a tunnel oxide layer, a floating gate, ONO layers, and a control gate on a semiconductor substrate; b) conformably forming a first sidewall oxide layer made of a silicon oxide layer along both sidewalls of the stack gate pattern; c) performing a plasma nitride process for forming a nitride barrier layer in the first sidewall oxide layer; d) forming a sidewall nitride layer on the first sidewall oxide layer; e) conformably forming a second sidewall oxide layer on the sidewall nitride layer; and f) performing an etching process for forming a spacer which includes the first sidewall oxide layer, the nitride barrier layer, the sidewall nitride layer, and the second sidewall oxide layer. The flash memory device prevents data from being lost via the spacer equipped with a nitride barrier layer, resulting in increased reliability of a desired flash memory device.
    • 一种闪存器件的制造方法,包括:a)在半导体衬底上形成由隧道氧化物层,浮栅,ONO层和控制栅极构成的堆叠栅极图案; b)沿堆叠栅极图案的两个侧壁顺应地形成由氧化硅层制成的第一侧壁氧化物层; c)执行用于在所述第一侧壁氧化物层中形成氮化物阻挡层的等离子体氮化物工艺; d)在第一侧壁氧化物层上形成侧壁氮化物层; e)在侧壁氮化物层上顺应地形成第二侧壁氧化物层; 以及f)执行用于形成包括所述第一侧壁氧化物层,所述氮化物阻挡层,所述侧壁氮化物层和所述第二侧壁氧化物层的间隔物的蚀刻工艺。 闪存器件防止通过配备有氮化物阻挡层的间隔件丢失数据,导致期望的闪存器件的可靠性增加。
    • 26. 发明授权
    • Display device preventing short of driving voltage lines
    • 显示装置防止驱动电压线短路
    • US07564060B2
    • 2009-07-21
    • US11675832
    • 2007-02-16
    • Un-Cheol SungJoo-Hyeon LeeSang-Pil Lee
    • Un-Cheol SungJoo-Hyeon LeeSang-Pil Lee
    • H01L27/14H01L29/04H01L29/15H01L31/036
    • H01L27/3276
    • A display includes a substrate, a plurality of first and second signal lines formed on the substrate and insulated from each other, a plurality of driving voltage lines formed with a same layer as the first signal lines, at least one driving voltage connection formed with a same layer as the second signal lines, at least one connecting member electrically connecting the driving voltage lines and the driving voltage connection, at least one first thin film transistor connected to the first and second signal lines, at least one second thin film transistor connected to the first thin film transistor and the driving voltage lines, at least one first electrode connected to the second thin film transistors, at least one second electrode opposing the first electrode, at least one organic light emitting member formed between the first electrode and the second electrode, and at least one assistant member formed between the connecting member and the second electrode.
    • 显示器包括基板,形成在基板上并彼此绝缘的多个第一和第二信号线,形成有与第一信号线相同层的多个驱动电压线,形成有至少一个驱动电压连接的驱动电压连接 与第二信号线相同的层,至少一个电连接驱动电压线和驱动电压连接的连接构件,连接到第一和第二信号线的至少一个第一薄膜晶体管,至少一个第二薄膜晶体管,连接到 第一薄膜晶体管和驱动电压线,连接到第二薄膜晶体管的至少一个第一电极,与第一电极相对的至少一个第二电极,形成在第一电极和第二电极之间的至少一个有机发光部件 以及形成在连接构件和第二电极之间的至少一个辅助构件。
    • 30. 发明申请
    • METHOD OF MANUFACTURING IMAGE SENSOR
    • 制造图像传感器的方法
    • US20080064135A1
    • 2008-03-13
    • US11847691
    • 2007-08-30
    • Joo-Hyeon Lee
    • Joo-Hyeon Lee
    • H01L31/18H01L21/306
    • H01L27/14689H01L27/14601H01L27/1463H01L27/14643
    • Embodiments relate to a method of manufacturing an image sensor which may include forming a gate pattern including a tunnel oxide film, an oxide-nitride-oxide (ONO) film, a floating gate and a control gate over a semiconductor substrate. An oxide film and a nitride film may be formed over the semiconductor substrate including the gate pattern. A photoresist pattern may be formed which covers the oxide film and the nitride film formed over the gate pattern. The nitride film may be etched in a region not covered by the photoresist pattern. The oxide film may be etched to have a predetermined thickness. A deep implant process may deeply implant an N-type dopant into the semiconductor substrate. Ashing and cleaning processes may remove the remaining photoresist pattern.
    • 实施例涉及制造图像传感器的方法,其可以包括在半导体衬底上形成包括隧道氧化物膜,氧化物 - 氧化物 - 氧化物(ONO)膜,浮置栅极和控制栅极的栅极图案。 可以在包括栅极图案的半导体衬底上形成氧化物膜和氮化物膜。 可以形成覆盖氧化膜和在栅极图案上形成的氮化物膜的光致抗蚀剂图案。 可以在未被光致抗蚀剂图案覆盖的区域中蚀刻氮化物膜。 氧化膜可以被蚀刻以具有预定的厚度。 深注入工艺可以将N型掺杂剂深入注入到半导体衬底中。 灰化和清洁过程可以去除剩余的光致抗蚀剂图案。