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21. 发明授权

US07112464B2 Devices having vertically-disposed nanofabric articles and methods of making the same 有权
标题翻译：具有垂直布置的纳米制品的装置及其制造方法
公开(公告)号：US07112464B2
公开(公告)日：2006-09-26
申请号：US11158217
申请日：2005-06-21
申请人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
发明人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L21/00
CPC分类号： G11C13/025 , B81B2203/0338 , B81B2203/04 , B81C1/00142 , B81C2201/0109 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/22 , G11C11/56 , G11C13/0033 , G11C23/00 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L51/0048 , H01L2221/1094 , Y10S977/943
摘要： Electro-mechanical switches and memory cells using vertically-disposed nanofabric articles and methods of making the same are described. An electro-mechanical device, includes a structure having a major horizontal surface and a channel formed therein. A conductive trace is in the channel; and a nanotube article vertically suspended in the channel, in spaced relation to a vertical wall of the channel. The article is electro-mechanically deflectable in a horizontal direction toward the conductive trace. Under certain embodiments, the vertically suspended extent of the nanotube article is defined by a thin film process. Under certain embodiments, the vertically suspended extent of the nanotube article is about 50 nanometers or less. Under certain embodiments, the nanotube article is clamped with a conducting material disposed in porous spaces between some nanotubes of the nanotube article. Under certain embodiments, the nanotube article is formed from a porous nanofabric. Under certain embodiments, the nanotube article is electromechanically deflectable into contact with the conductive trace and the contact is either a volatile state or non-volatile state depending on the device construction. Under certain embodiments, the vertically oriented device is arranged into various forms of three-trace devices. Under certain embodiments, the channel may be used for multiple independent devices, or for devices that share a common electrode.
摘要翻译：描述了使用垂直布置的纳米制品的机电开关和存储单元及其制造方法。机电装置包括具有主要水平表面和形成在其中的通道的结构。通道中有导电迹线; 以及垂直悬挂在所述通道中的与所述通道的垂直壁成间隔开的纳米管制品。该物品在水平方向上可电导向导电迹线偏转。在某些实施方案中，纳米管制品的垂直悬浮程度由薄膜工艺限定。在某些实施方案中，纳米管制品的垂直悬浮程度为约50纳米或更小。在某些实施例中，纳米管制品被夹持在布置在纳米管制品的一些纳米管之间的多孔空间中的导电材料上。在某些实施方案中，纳米管制品由多孔纳米纤维形成。在某些实施例中，取决于器件结构，纳米管制品在机电上可偏转成与导电迹线接触，并且触点是易失性状态或非易失性状态。在某些实施例中，垂直取向的装置被布置成各种形式的三轨迹装置。在某些实施例中，信道可以用于多个独立设备，或者可以用于共享公共电极的设备。

22. 发明授权

US07274078B2 Devices having vertically-disposed nanofabric articles and methods of making the same 有权
公开(公告)号：US07274078B2
公开(公告)日：2007-09-25
申请号：US11158544
申请日：2005-06-22
申请人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
发明人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L27/14
CPC分类号： G11C13/025 , B81B2203/0338 , B81B2203/04 , B81C1/00142 , B81C2201/0109 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/22 , G11C11/56 , G11C13/0033 , G11C23/00 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L51/0048 , H01L2221/1094 , Y10S977/943
摘要： Electro-mechanical switches and memory cells using vertically-disposed nanofabric articles and methods of making the same are described. An electro-mechanical device, includes a structure having a major horizontal surface and a channel formed therein. A conductive trace is in the channel; and a nanotube article vertically suspended in the channel, in spaced relation to a vertical wall of the channel. The article is electro-mechanically deflectable in a horizontal direction toward the conductive trace. Under certain embodiments, the vertically suspended extent of the nanotube article is defined by a thin film process. Under certain embodiments, the vertically suspended extent of the nanotube article is about 50 nanometers or less. Under certain embodiments, the nanotube article is clamped with a conducting material disposed in porous spaces between some nanotubes of the nanotube article. Under certain embodiments, the nanotube article is formed from a porous nanofabric. Under certain embodiments, the nanotube article is electromechanically deflectable into contact with the conductive trace and the contact is either a volatile state or non-volatile state depending on the device construction. Under certain embodiments, the vertically oriented device is arranged into various forms of three-trace devices. Under certain embodiments, the channel may be used for multiple independent devices, or for devices that share a common electrode.

23. 发明授权

US07719067B2 Devices having vertically-disposed nanofabric articles and methods of making the same 有权
标题翻译：具有垂直布置的纳米制品的装置及其制造方法
公开(公告)号：US07719067B2
公开(公告)日：2010-05-18
申请号：US11526364
申请日：2006-09-25
申请人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
发明人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L27/14
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L27/10 , Y10S977/724 , Y10S977/742 , Y10S977/796 , Y10S977/856 , Y10S977/888 , Y10S977/943 , Y10T428/24893 , Y10T428/24917
摘要： Electro-mechanical switches and memory cells using vertically-oriented nanofabric articles and methods of making the same. Under one aspect, a nanotube device includes a substantially horizontal substrate having a vertically oriented feature; and a nanotube film substantially conforming to a horizontal feature of the substrate and also to at least the vertically oriented feature. Under another aspect, an electromechanical device includes a structure having a major horizontal surface and a channel formed therein, the channel having first and second wall electrodes defining at least a portion of first and second vertical walls of the channel; first and second nanotube articles vertically suspended in the channel and in spaced relation to a corresponding first and second wall electrode, and electromechanically deflectable in a horizontal direction toward or away from the corresponding first and second wall electrode in response to electrical stimulation.
摘要翻译：使用垂直取向的纳米制品的机电开关和存储单元及其制造方法。在一个方面，纳米管装置包括具有垂直取向特征的基本水平的基底; 以及基本上符合衬底的水平特征以及至少垂直取向的特征的纳米管膜。在另一方面，机电装置包括具有主要水平表面和形成在其中的通道的结构，所述通道具有限定通道的第一和第二垂直壁的至少一部分的第一和第二壁电极; 垂直悬挂在通道中并且与对应的第一和第二壁电极间隔开的第一和第二纳米管制品，并且响应于电刺激而在水平方向上以机电方式偏向或远离对应的第一和第二壁电极。

24. 发明授权

US07619291B2 Devices having horizontally-disposed nanofabric articles and methods of making the same 有权
标题翻译：具有水平布置的纳米制品的装置及其制造方法
公开(公告)号：US07619291B2
公开(公告)日：2009-11-17
申请号：US11999228
申请日：2007-12-04
申请人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
发明人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L29/84
CPC分类号： G11C13/025 , B81B2203/0338 , B81B2203/04 , B81C1/00142 , B81C2201/0109 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/22 , G11C11/56 , G11C23/00 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L51/0048 , H01L2221/1094 , Y10S977/724 , Y10S977/734 , Y10S977/742
摘要： New devices having horizontally-disposed nanofabric articles and methods of making same are described. A discrete electro-mechanical device includes a structure having an electrically-conductive trace. A defined patch of nanotube fabric is disposed in spaced relation to the trace; and the defined patch of nanotube fabric is electromechanically deflectable between a first and second state. In the first state, the nanotube article is in spaced relation relative to the trace, and in the second state the nanotube article is in contact with the trace. A low resistance signal path is in electrical communication with the defined patch of nanofabric. Under certain embodiments, the structure includes a defined gap into which the electrically conductive trace is disposed. The defined gap has a defined width, and the defined patch of nanotube fabric spans the gap and has a longitudinal extent that is slightly longer than the defined width of the gap.
摘要翻译：描述了具有水平布置的纳米制品的新器件及其制造方法。分立的机电装置包括具有导电迹线的结构。定义的纳米管织物贴片与痕迹间隔开设置; 并且所述限定的纳米管织物片在第一和第二状态之间是机电偏转的。在第一状态下，纳米管制品相对于迹线具有间隔的关系，并且在第二状态下，纳米管制品与痕迹接触。低电阻信号路径与所定义的纳米片段电连通。在某些实施例中，该结构包括限定的导电迹线设置的间隙。限定的间隙具有限定的宽度，并且限定的纳米管织物片段跨过间隙并且具有比限定的间隙宽度稍长的纵向范围。

25. 发明申请

US20090045473A1 Devices having horizontally-disposed nanofabric articles and methods of making the same 有权
公开(公告)号：US20090045473A1
公开(公告)日：2009-02-19
申请号：US11999228
申请日：2007-12-04
申请人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
发明人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L29/84
CPC分类号： G11C13/025 , B81B2203/0338 , B81B2203/04 , B81C1/00142 , B81C2201/0109 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/22 , G11C11/56 , G11C23/00 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L51/0048 , H01L2221/1094 , Y10S977/724 , Y10S977/734 , Y10S977/742
摘要： New devices having horizontally-disposed nanofabric articles and methods of making same are described. A discrete electro-mechanical device includes a structure having an electrically-conductive trace. A defined patch of nanotube fabric is disposed in spaced relation to the trace; and the defined patch of nanotube fabric is electromechanically deflectable between a first and second state. In the first state, the nanotube article is in spaced relation relative to the trace, and in the second state the nanotube article is in contact with the trace. A low resistance signal path is in electrical communication with the defined patch of nanofabric. Under certain embodiments, the structure includes a defined gap into which the electrically conductive trace is disposed. The defined gap has a defined width, and the defined patch of nanotube fabric spans the gap and has a longitudinal extent that is slightly longer than the defined width of the gap.

26. 发明申请

US20100012927A1 DEVICES HAVING VERTICALLY-DISPOSED NANOFABRIC ARTICLES AND METHODS OF MAKING THE SAME 有权
标题翻译：具有垂直处理的纳米制品的装置及其制造方法
公开(公告)号：US20100012927A1
公开(公告)日：2010-01-21
申请号：US11526364
申请日：2006-09-25
申请人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
发明人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L29/84 , H01L51/30
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L27/10 , Y10S977/724 , Y10S977/742 , Y10S977/796 , Y10S977/856 , Y10S977/888 , Y10S977/943 , Y10T428/24893 , Y10T428/24917
摘要： Electro-mechanical switches and memory cells using vertically-oriented nanofabric articles and methods of making the same. Under one aspect, a nanotube device includes a substantially horizontal substrate having a vertically oriented feature; and a nanotube film substantially conforming to a horizontal feature of the substrate and also to at least the vertically oriented feature. Under another aspect, an electromechanical device includes a structure having a major horizontal surface and a channel formed therein, the channel having first and second wall electrodes defining at least a portion of first and second vertical walls of the channel; first and second nanotube articles vertically suspended in the channel and in spaced relation to a corresponding first and second wall electrode, and electromechanically deflectable in a horizontal direction toward or away from the corresponding first and second wall electrode in response to electrical stimulation.
摘要翻译：使用垂直取向的纳米制品的机电开关和存储单元及其制造方法。在一个方面，纳米管装置包括具有垂直取向特征的基本水平的基底; 以及基本上符合衬底的水平特征以及至少垂直取向的特征的纳米管膜。在另一方面，机电装置包括具有主要水平表面和形成在其中的通道的结构，所述通道具有限定通道的第一和第二垂直壁的至少一部分的第一和第二壁电极; 垂直悬挂在通道中并且与对应的第一和第二壁电极间隔开的第一和第二纳米管制品，并且响应于电刺激而在水平方向上以机电方式偏向或远离对应的第一和第二壁电极。

27. 发明授权

US06924538B2 Devices having vertically-disposed nanofabric articles and methods of making the same 失效
标题翻译：具有垂直布置的纳米制品的装置及其制造方法
公开(公告)号：US06924538B2
公开(公告)日：2005-08-02
申请号：US10776572
申请日：2004-02-11
申请人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
发明人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
IPC分类号： B81B3/00 , G11C11/56 , G11C13/02 , G11C23/00 , H01H1/00 , H01H59/00 , H01L21/768 , H01L51/30 , H01L29/84 , B82B1/00
CPC分类号： G11C13/025 , B81B2203/0338 , B81B2203/04 , B81C1/00142 , B81C2201/0109 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/22 , G11C11/56 , G11C13/0033 , G11C23/00 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L51/0048 , H01L2221/1094 , Y10S977/943
摘要： Electro-mechanical switches and memory cells using vertically-disposed nanofabric articles and methods of making the same are described. An electro-mechanical device, includes a structure having a major horizontal surface and a channel formed therein. A conductive trace is in the channel; and a nanotube article vertically suspended in the channel, in spaced relation to a vertical wall of the channel. The article is electro-mechanically deflectable in a horizontal direction toward the conductive trace. Under certain embodiments, the vertically suspended extent of the nanotube article is defined by a thin film process. Under certain embodiments, the vertically suspended extent of the nanotube article is about 50 nanometers or less. Under certain embodiments, the nanotube article is clamped with a conducting material disposed in porous spaces between some nanotubes of the nanotube article. Under certain embodiments, the nanotube article is formed from a porous nanofabric. Under certain embodiments, the nanotube article is electromechanically deflectable into contact with the conductive trace and the contact is either a volatile state or non-volatile state depending on the device construction. Under certain embodiments, the vertically oriented device is arranged into various forms of three-trace devices. Under certain embodiments, the channel may be used for multiple independent devices, or for devices that share a common electrode.
摘要翻译：描述了使用垂直布置的纳米制品的机电开关和存储单元及其制造方法。机电装置包括具有主要水平表面和形成在其中的通道的结构。通道中有导电迹线; 以及垂直悬挂在所述通道中的与所述通道的垂直壁成间隔开的纳米管制品。该物品在水平方向上可电导向导电迹线偏转。在某些实施方案中，纳米管制品的垂直悬浮程度由薄膜工艺限定。在某些实施方案中，纳米管制品的垂直悬浮程度为约50纳米或更小。在某些实施例中，纳米管制品被夹持在布置在纳米管制品的一些纳米管之间的多孔空间中的导电材料上。在某些实施方案中，纳米管制品由多孔纳米纤维形成。在某些实施例中，取决于器件结构，纳米管制品在机电上可偏转成与导电迹线接触，并且触点是易失性状态或非易失性状态。在某些实施例中，垂直取向的装置被布置成各种形式的三轨迹装置。在某些实施例中，信道可以用于多个独立设备，或者可以用于共享公共电极的设备。

28. 发明授权

US07045421B2 Process for making bit selectable devices having elements made with nanotubes 有权
标题翻译：用于制造具有由纳米管制成的元件的位选择器件的工艺
公开(公告)号：US07045421B2
公开(公告)日：2006-05-16
申请号：US10824706
申请日：2004-04-15
申请人： Thomas Rueckes , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Thomas Rueckes , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L21/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , H01L27/28 , H01L51/0048 , H01L51/0052
摘要： A method is used to make a bit selectable device having nanotube memory elements. A structure having at least two transistors is provided, each with a drain and a source with a defined channel region therebetween, each transistor further including a gate over said channel. A trench is formed between one of the source and drain of a first transistor and one of the source and drain of a second transistor. An electrical communication path is formed in the trench between one of the source and drain of a first transistor and one of the source and drain of a second transistor. A defined pattern of nanotube fabric is provided over at least a horizontal portion of the structure and extending into the trench. An electrode is provided in the trench. A pattern of nanotube fabric is suspended so that at least a portion is vertically suspended in spaced relation to the vertical walls of the trench and positioned so that the vertically suspended defined pattern of nanotube fabric is electromechanically deflectable into electrical communication with one of the drain and source of a first transistor and one of the source and drain of a second transistor.
摘要翻译：一种方法用于制造具有纳米管存储元件的位选择器件。提供了具有至少两个晶体管的结构，每个具有漏极和源极之间具有限定的沟道区域，每个晶体管还包括位于所述沟道上的栅极。在第一晶体管的源极和漏极之一以及第二晶体管的源极和漏极之一之间形成沟槽。在第一晶体管的源极和漏极之一以及第二晶体管的源极和漏极中的一个之间的沟槽中形成电连通路径。在结构的至少一个水平部分上提供限定的纳米管织物图案并且延伸到沟槽中。在沟槽中设置电极。纳米管织物的图案被悬浮，使得至少一部分垂直悬挂在与沟槽的垂直壁隔开的位置上，并且被定位成使得垂直悬挂的限定图案的纳米管织物可机电偏转成与排水管之一电连通第一晶体管的源极和第二晶体管的源极和漏极之一。

29. 发明授权

US06995046B2 Process for making byte erasable devices having elements made with nanotubes 失效
标题翻译：用于制造具有由纳米管制成的元件的字节可擦除器件的过程
公开(公告)号：US06995046B2
公开(公告)日：2006-02-07
申请号：US10824678
申请日：2004-04-15
申请人： Thomas Rueckes , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Thomas Rueckes , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L21/335
CPC分类号： H01L51/0048 , B82Y10/00 , G11C13/025 , G11C23/00 , Y10S977/943
摘要： A method of making byte erasable devices having elements made with nanotubes. Under one aspect of the invention, a device is made having nanotube memory elements. A structure is provided having a plurality of transistors, each with a drain and a source with a defined channel region therebetween, each transistor further including a gate over said channel. For a predefined set of transistors, a corresponding trench is formed between gates of adjacent transistors. For each trench, a defined pattern of nanotube fabric is provided over at least a horizontal portion of the structure and extending into the trench. An electrode is provided in each trench. Each defined pattern of nanotube fabric is suspended so that at least a portion is vertically suspended in spaced relation to the vertical walls of the trench and positioned so that the vertically suspended defined pattern of nanotube fabric is electromechanically deflectable into electrical communication with one of the drain and source of a transistor. An electrical communication path is provided electrically connecting each electrode so that all electrodes may electro-statically attract a corresponding defined pattern of nanotube fabric away from a transistor and toward the electrode.
摘要翻译：一种制造具有由纳米管制成的元件的字节可擦除器件的方法。在本发明的一个方面，制造具有纳米管存储元件的装置。提供了具有多个晶体管的结构，每个具有漏极和源极之间的沟道区域，每个晶体管还包括位于所述沟道上的栅极。对于预定义的一组晶体管，在相邻晶体管的栅极之间形成相应的沟槽。对于每个沟槽，在结构的至少水平部分上提供限定的纳米管织物图案并且延伸到沟槽中。在每个沟槽中设置电极。每个限定的纳米管织物图案被悬挂，使得至少一部分垂直悬挂在与沟槽的垂直壁隔开的关系中，并且定位成使得垂直悬挂的限定图案的纳米管织物可机电偏转成与漏斗之一电连通和晶体管的源极。电气连接路径被电连接每个电极，使得所有电极可以静电吸引相应的限定图案的纳米管织物远离晶体管并朝向电极。

30. 发明授权

US08058089B2 Electromechanical memory array using nanotube ribbons and method for making same 有权
标题翻译：使用纳米管带的机电存储器阵列及其制造方法
公开(公告)号：US08058089B2
公开(公告)日：2011-11-15
申请号：US12415247
申请日：2009-03-31
申请人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
发明人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
IPC分类号： H01L21/00
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L27/10 , Y10S977/724 , Y10S977/742 , Y10S977/796 , Y10S977/856 , Y10S977/888 , Y10S977/943 , Y10T428/24893 , Y10T428/24917
摘要： Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the electrically conductive traces, wherein each ribbon comprises one or more nanotubes. The electro-mechanical circuit elements are made by providing a structure having electrically conductive traces and supports, in which the supports extend from a surface of the substrate. A layer of nanotubes is provided over the supports, and portions of the layer of nanotubes are selectively removed to form ribbons of nanotubes that cross the electrically conductive traces. Each ribbon includes one or more nanotubes.
摘要翻译：公开了诸如存储单元的机电电路及其制造方法。这些电路包括具有导电迹线和从衬底表面延伸的支撑体的结构，以及由支撑体悬挂的穿过导电迹线的纳米管带，其中每个带包括一个或多个纳米管。电 - 机械电路元件通过提供具有导电迹线和支撑件的结构来制造，其中支撑件从基板的表面延伸。在载体上提供一层纳米管，并且选择性地去除纳米管层的部分以形成穿过导电迹线的纳米管带。每个带包括一个或多个纳米管。

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