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    • 29. 发明申请
    • Method and apparatus to detect fault conditions of plasma processing reactor
    • 检测等离子体处理反应堆故障状况的方法和装置
    • US20070284246A1
    • 2007-12-13
    • US11447946
    • 2006-06-07
    • Douglas KeilEric HudsonChris KimballAndreas Fischer
    • Douglas KeilEric HudsonChris KimballAndreas Fischer
    • C23C14/00
    • C23C16/52C23C16/509H01J37/32935H01J37/3299
    • A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information. Such analysis enables detection of failures and the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing. The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed in any way to reveal a specific fault. Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters. The detector is preferably positioned at a grounded surface within the reactor such as a grounded showerhead electrode, and can be of a planar ion flux probe (PIF) type or a non-capacitive type. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement. If the detector is a probe, the probe can be embedded in a part of a plasma processing chamber and can comprises one or more gas feed-through holes.
    • 提供了一种用于等离子体处理室的故障检测方法。 该方法包括监测等离子体室内的等离子体参数并分析所得到的信息。 这样的分析使得能够在晶片处理过程中检测等离子体处理反应器中的故障和故障模式的诊断。 该方法包括测量作为时间的函数的等离子体参数并分析所得到的数据。 数据可以观察,表征,与参考数据进行比较,数字化,处理或分析,以显示特定故障。 可以用诸如探针的检测器进行监测,该探针优选地保持在与腔室内的表面基本上共面的等离子体室内,并且直接测量净离子通量和其它等离子体参数。 检测器优选地位于反应器内的接地表面,例如接地喷头电极,并且可以是平面离子通量探针(PIF)型或非电容型。 可以检测到的室内故障包括处理室中的过程副产物的积聚,氦泄漏,匹配重新调谐事件,差的稳定化速率和等离子体约束的损失。 如果检测器是探针,则探针可以嵌入在等离子体处理室的一部分中,并且可以包括一个或多个气体馈通孔。