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    • 26. 发明授权
    • Process and device for the analog convolution of images
    • 图像模拟卷积的过程和设备
    • US5521857A
    • 1996-05-28
    • US166650
    • 1993-12-14
    • Yang NiFrancis Devos
    • Yang NiFrancis Devos
    • G06G7/19G06G7/12
    • G06K9/4619G06G7/1907G06K9/00986
    • A process and device for the analog convolution of images, especially two-dimensional convolution operations of Gaussian type on a set of image pixels represented by voltages. The voltages are applied to a first set of capacitors. For each capacitor, one terminal is connected to a reference voltage; the other terminal is part of a network of nodes, each of which is insulated from the others. The nodes which are adjacent are connected together for a predetermined duration via a second set of uncharged capacitors. The nodes of the network are then insulated from each other again and the second set of capacitors are discharged. The steps of connecting the nodes together, insulating them from each other, and discharging the second set are repeated. Finally, the new voltages on the nodes of the network, which represent the pixels of a convolved image, are read out.
    • 用于模拟卷积图像的过程和装置,特别是高斯类型的二维卷积运算在由电压表示的一组图像像素上。 电压被施加到第一组电容器。 对于每个电容器,一个端子连接到参考电压; 另一个终端是节点网络的一部分,每个节点与其他网络绝缘。 相邻的节点经由第二组不带电电容器连接在一起预定的持续时间。 然后,网络的节点再次彼此绝缘,并且第二组电容器被放电。 重复将节点连接在一起,彼此绝缘并排出第二组的步骤。 最后,读出代表卷积图像像素的网络节点上的新电压。
    • 27. 发明授权
    • Binary resistor network and its use for labelling related components of
digitised images in artificial vision
    • 二进制电阻网络及其在人造视觉中用于标记数字化图像的相关组件的用途
    • US5381516A
    • 1995-01-10
    • US968072
    • 1992-10-30
    • Francis DevosYang Ni
    • Francis DevosYang Ni
    • G06N3/00G06F15/173G06F15/80G06K9/46G06T1/20G06T7/00G06F15/18
    • G06K9/4638G06T1/20G06T7/00
    • A binary resistor network is provided for the labelling of related components of binary or binary-converted images and for artificial vision comprising a plurality of peaks each joined by arches forming binary resistors. Each peak is provided with an elementary processor which enables, with the assistance of a central controller, the association of at least one associative function with each of the arches and a binary constraint with one or more peaks, thus making possible to provide for selective processing of data stored at the site of each of the elementary processors. Each arch of the network is equipped with an associative OR function and forms an accelerated Manchester chain, the establishment time of the network through application of local binary constraints thus being thus linear with the number of peaks.
    • 提供二进制电阻网络用于标记二进制或二进制转换的图像的相关组件,并且用于人造视觉,其包括多个峰,每个峰通过拱形成二进制电阻而连接。 每个峰值设置有基本处理器,其在中央控制器的帮助下能够使至少一个关联函数与每个拱形和具有一个或多个峰值的二进制约束相关联,从而可以提供选择性处理 存储在每个基本处理器的位置的数据。 网络的每个拱形配备有关联OR函数,并形成加速的曼彻斯特链,通过应用局部二进制约束来建立网络的建立时间,因此与峰值的数量呈线性关系。
    • 28. 发明授权
    • InGaAs photodiode array
    • InGaAs光电二极管阵列
    • US09018727B2
    • 2015-04-28
    • US14131897
    • 2012-07-11
    • Yang Ni
    • Yang Ni
    • H01L27/146H01L31/103H01L31/18
    • H01L27/14654H01L27/14609H01L27/14649H01L27/1465H01L27/14683H01L27/14689H01L27/14694H01L31/1035H01L31/1844H01L31/1868Y02E10/544Y02P70/521
    • The invention relates to an InGaAs photodiode army (101) and to the method for manufacturing same, wherein said array includes: a cathode including at least one indium-phosphide substrate layer (4) and an active gallium-indium arsenide layer (5); and a plurality of anodes (3) at least partially formed in the active gallium-indium arsenide layer by diffusing a P-type dopant, the interaction between an anode (3) and the cathode forming a photodiode. According to said method, an indium-phosphide passivation layer (6) is arranged on the active layer before the diffusion of the P-type dopant forming the anodes (3), and a first selective etching is performed so as to remove, over the entire thickness thereof, an area (10) of the passivation layer (6) surrounding each anode (3).
    • 本发明涉及一种InGaAs光电二极管军(101)及其制造方法,其中所述阵列包括:包括至少一个磷化铟基底层(4)和活性砷化镓砷化镓层(5)的阴极; 以及通过扩散P型掺杂剂至少部分地形成在所述活性镓铟砷化物层中的多个阳极(3),阳极(3)和形成光电二极管的阴极之间的相互作用。 根据所述方法,在形成阳极(3)的P型掺杂物的扩散之前,在有源层上布置了磷化铟钝化层(6),并且进行第一选择性蚀刻以除去 其整个厚度是围绕每个阳极(3)的钝化层(6)的区域(10)。
    • 29. 发明申请
    • MATRIX SENSOR
    • 矩阵传感器
    • US20110298755A1
    • 2011-12-08
    • US13139567
    • 2009-12-16
    • Yang Ni
    • Yang Ni
    • G06F3/042G01J1/42
    • H04N5/376H04N5/335H04N5/3454H04N5/3456H04N5/347H04N5/3765
    • The present invention relates to a matrix optical sensor including: a matrix of pixels (6ij), each pixel (6ij) being identified by a row address and a column address; and a plurality of programmable units for reading the pixels (6ij), each connected to at least one column of pixels and each being configured: to enable storage of at least one row address during a step of programming the sensor (1); to receive a row address; and for some read address values, to compare the received row address to the programmed row address, and if they are equal to enable reading of the value of the corresponding pixel (6ij).
    • 本发明涉及一种矩阵光学传感器,包括:像素矩阵(6ij),每个像素(6ij)由行地址和列地址标识; 以及多个用于读取像素(6ij)的可编程单元,每个像素连接到至少一列像素,并且每个被配置为:在编程所述传感器(1)的步骤期间能够存储至少一个行地址; 接收行地址; 并且对于一些读取地址值,将接收的行地址与编程的行地址进行比较,并且如果它们等于启用对相应像素(6ij)的值的读取。
    • 30. 发明授权
    • Photosensitive detector and mosaic of photosensitive detectors for the
detection of luminous flashes and applications
    • 感光探测器和感光探测器的马赛克,用于检测发光闪光和应用
    • US6023058A
    • 2000-02-08
    • US936658
    • 1997-09-24
    • Jean-Pierre MerleThierry SolenneYang NiFrancis Devos
    • Jean-Pierre MerleThierry SolenneYang NiFrancis Devos
    • G01S3/784H01J40/14F41G7/26
    • G01S3/784F41G7/226F41G7/2293
    • A photosensitive detector (1) for detecting luminous flashes (2) is provided with a photosensitive diode (3) which is linked to a positive voltage and to ground via a resistor R1 and which is capable of transforming the luminous flashes into electrical signals and a circuit (4) that processes the electrical signals generated by the photosensitive diode (3). The circuit (4) causes electrical signals which correspond to luminous flashes (2) received by the photosensitive diode (3) and which exhibit a fast rise time to be strengthened, and the circuit (4) causes electrical signals which correspond to luminous flashes (2) received by the photosensitive diode (3) and which vary more slowly in intensity to be attenuated. The circuit (4) is linked directly to the photosensitive diode (3) and includes a differentiator circuit. The differentiator circuit has a differential amplifier (5) with a non-inverting input linked to a connection point situated between the photosensitive diode and the resistor R1, an inverting input linked to ground via a capacitor and to the connection point via a resistor Rx, and an output, and the differential amplifier (5) also has a resistor R2 linked to a connection point between the capacitor and the inverting input.
    • 用于检测发光闪光(2)的光敏检测器(1)设置有光敏二极管(3),其通过电阻器R1连接到正电压并接地,并且能够将发光闪光变换成电信号,并且 电路(4),其处理由感光二极管(3)产生的电信号。 电路(4)引起对应于由光敏二极管(3)接收的发光闪光(2)的电信号,并且其显示快速上升时间被加强,并且电路(4)引起对应于发光闪光的电信号 2)由感光二极管(3)接收并且其强度变化较慢以被衰减。 电路(4)直接连接到光敏二极管(3),并包括微分电路。 微分电路具有差分放大器(5),其中非反相输入端连接到位于光敏二极管和电阻器R1之间的连接点,反相输入端通过电容器接地,并通过电阻器Rx连接到连接点, 和输出端,并且差分放大器(5)还具有与电容器和反相输入端之间的连接点连接的电阻器R2。