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21. 发明申请

US20110089030A1 CIG sputtering target and methods of making and using thereof 审中-公开
标题翻译： CIG溅射靶及其制造和使用方法
公开(公告)号：US20110089030A1
公开(公告)日：2011-04-21
申请号：US12588578
申请日：2009-10-20
申请人： Daniel R. Juliano , Bao Nguyen , A. Piers Newbery , Asit Rairkar , Johannes Vlcek , Abdelouahab Ziani
发明人： Daniel R. Juliano , Bao Nguyen , A. Piers Newbery , Asit Rairkar , Johannes Vlcek , Abdelouahab Ziani
IPC分类号： C25B11/04 , B05D1/36 , B23K15/00 , B23K26/00 , B22D19/00 , B22D18/00 , B22F3/02
CPC分类号： C23C14/3414 , B22D11/0614 , B22D17/007 , B22D18/06 , B22F3/22 , C22C1/04 , C22C28/00
摘要： A sputtering target includes a copper indium gallium sputtering target material on a backing structure. The sputtering target material has a density of at least 100% or more as defined by the rule of mixtures applied to densities of component elements of the sputtering target material. The sputtering target material has an overall uniform composition.
摘要翻译：溅射靶包括背衬结构上的铜铟镓溅射靶材料。溅射靶材料具有至少100％以上的密度，其由施加到溅射靶材料的组分元素的密度的混合物的规则所定义。溅射靶材料具有总体均匀的组成。

22. 发明授权

US07927912B2 Method of forming a sputtering target 有权
标题翻译：形成溅射靶的方法
公开(公告)号：US07927912B2
公开(公告)日：2011-04-19
申请号：US12801383
申请日：2010-06-07
申请人： Daniel R. Juliano , Deborah Mathias , Neil M. Mackie
发明人： Daniel R. Juliano , Deborah Mathias , Neil M. Mackie
IPC分类号： H01L21/00
CPC分类号： C23C14/3414 , C23C14/0623 , C23C14/562 , H01L31/0322 , H01L31/0749 , H01L31/206 , Y02E10/541 , Y02P70/521
摘要： A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.
摘要翻译：溅射靶，包括溅射层和支撑结构。溅射层包括含碱的过渡金属。支撑结构包括不会对太阳能电池的基于铜铟硒（CIS）的半导体吸收层的性能产生负面影响的第二材料。溅射层直接接触第二材料。

23. 发明授权

US08709548B1 Method of making a CIG target by spray forming 有权
标题翻译：通过喷雾成型制造CIG靶的方法
公开(公告)号：US08709548B1
公开(公告)日：2014-04-29
申请号：US12907783
申请日：2010-10-19
申请人： A. Piers Newbery , Timothy Kueper , Daniel R. Juliano
发明人： A. Piers Newbery , Timothy Kueper , Daniel R. Juliano
IPC分类号： B05D1/02
CPC分类号： C23C14/3414 , B22F3/115 , C22C1/0425 , C23C4/123 , C23C4/185
摘要： A method of making a sputtering target includes providing a backing structure, and forming a copper indium gallium sputtering target material on the backing structure by spray forming.
摘要翻译：制造溅射靶的方法包括提供背衬结构，以及通过喷涂形成在背衬结构上形成铜铟镓溅射靶材料。

24. 发明授权

US08048707B1 Sulfur salt containing CIG targets, methods of making and methods of use thereof 有权
标题翻译：含有CIG靶的硫酸盐，制备方法及其使用方法
公开(公告)号：US08048707B1
公开(公告)日：2011-11-01
申请号：US12907652
申请日：2010-10-19
申请人： Paul Shufflebotham , Daniel R. Juliano , Robert Tas , Neil Mackie
发明人： Paul Shufflebotham , Daniel R. Juliano , Robert Tas , Neil Mackie
IPC分类号： H01L31/032
CPC分类号： C23C14/3414 , C23C14/0623 , H01L31/0322 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A method of making a photovoltaic device includes forming a compound semiconductor layer including copper, indium, gallium, selenium and sulfur by reactive sputtering at least one target including copper, indium, gallium and a sulfur compound in an atmosphere including selenium.
摘要翻译：制造光伏器件的方法包括通过在包括硒的气氛中通过反应性溅射至少一种包括铜，铟，镓和硫化合物的靶来形成包括铜，铟，镓，硒和硫的化合物半导体层。

25. 发明授权

US08017523B1 Deposition of doped copper seed layers having improved reliability 有权
标题翻译：具有提高的可靠性的掺杂铜籽晶层的沉积
公开(公告)号：US08017523B1
公开(公告)日：2011-09-13
申请号：US12122118
申请日：2008-05-16
申请人： Hui-Jung Wu , Daniel R. Juliano , Wen Wu , Girish Dixit
发明人： Hui-Jung Wu , Daniel R. Juliano , Wen Wu , Girish Dixit
IPC分类号： H01L21/4763
CPC分类号： H01L21/76813 , H01L21/2855 , H01L21/76831 , H01L21/76865 , H01L21/76873 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Improved methods of depositing copper seed layers in copper interconnect structure fabrication processes are provided. Also provided are the resulting structures, which have improved electromigration performance and reduced line resistance. According to various embodiments, the methods involve depositing a copper seed bilayer on a barrier layer in a recessed feature on a partially fabricated semiconductor substrate. The bilayer has a copper alloy seed layer and a pure copper seed layer, with the pure copper seed layer is deposited on the copper alloy seed layer. The copper seed bilayers have reduced line resistance increase and better electromigration performance than conventional doped copper seed layers. Precise line resistance control is achieved by tuning the bilayer thickness to meet the desired electromigration performance.
摘要翻译：提供了在铜互连结构制造工艺中沉积铜种子层的改进方法。还提供了所得到的结构，其具有改善的电迁移性能和降低的线路电阻。根据各种实施例，所述方法包括在部分制造的半导体衬底上的凹陷特征中的阻挡层上沉积铜种子双层。双层具有铜合金种子层和纯铜籽晶层，纯铜籽晶层沉积在铜合金种子层上。与常规的掺杂铜种子层相比，铜晶双层具有降低的线电阻增加和更好的电迁移性能。通过调整双层厚度以满足所需的电迁移性能来实现精确的线路电阻控制。

26. 发明申请

US20110171395A1 METHOD OF FORMING A SPUTTERING TARGET 有权
标题翻译：形成喷射目标的方法
公开(公告)号：US20110171395A1
公开(公告)日：2011-07-14
申请号：US13073245
申请日：2011-03-28
申请人： Daniel R. Juliano , Deborah Mathias , Neil M. Mackie
发明人： Daniel R. Juliano , Deborah Mathias , Neil M. Mackie
IPC分类号： C23C14/14 , C23C14/34 , C23C4/06
CPC分类号： C23C14/3414 , C23C14/0623 , C23C14/562 , H01L31/0322 , H01L31/0749 , H01L31/206 , Y02E10/541 , Y02P70/521
摘要： A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.
摘要翻译：溅射靶，包括溅射层和支撑结构。溅射层包括含碱的过渡金属。支撑结构包括不会对太阳能电池的基于铜铟硒（CIS）的半导体吸收层的性能产生负面影响的第二材料。溅射层直接接触第二材料。

27. 发明授权

US07897020B2 Method for alkali doping of thin film photovoltaic materials 有权
标题翻译：薄膜光伏材料的碱掺杂方法
公开(公告)号：US07897020B2
公开(公告)日：2011-03-01
申请号：US12385570
申请日：2009-04-13
申请人： Neil M. Mackie , Daniel R. Juliano , Robert B. Zubeck
发明人： Neil M. Mackie , Daniel R. Juliano , Robert B. Zubeck
IPC分类号： C23C14/34
CPC分类号： C23C14/3464 , C23C14/165 , H01L31/022425 , H01L31/0322 , H01L31/0323 , H01L31/03923 , Y02E10/541 , Y02P70/521
摘要： A method of manufacturing a solar cell includes providing a substrate, depositing a first electrode comprising an alkali-containing transition metal layer over the substrate, depositing at least one p-type semiconductor absorber layer over the first electrode, wherein the p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, depositing an n-type semiconductor layer over the p-type semiconductor absorber layer, and depositing a second electrode over the n-type semiconductor layer. The step of depositing the alkali-containing transition metal layer includes sputtering from a first target comprising the transition metal and a second target comprising the alkali metal, where a composition of the first target is different from a composition of the second target.
摘要翻译：一种制造太阳能电池的方法包括提供基板，在所述基板上沉积包含含碱过渡金属层的第一电极，在所述第一电极上沉积至少一个p型半导体吸收层，其中所述p型半导体吸收体层包括铜铟硒（CIS）基合金材料，在p型半导体吸收层上沉积n型半导体层，并在n型半导体层上沉积第二电极。沉积含碱金属过渡金属层的步骤包括从包含过渡金属的第一靶和包含碱金属的第二靶的溅射，其中第一靶的组成不同于第二靶的组成。

28. 发明申请

US20110024285A1 Method for alkali doping of thin film photovoltaic materials 有权
标题翻译：薄膜光伏材料的碱掺杂方法
公开(公告)号：US20110024285A1
公开(公告)日：2011-02-03
申请号：US12461053
申请日：2009-07-30
申请人： Daniel R. Juliano
发明人： Daniel R. Juliano
IPC分类号： H01L31/18 , C23C14/34 , B05D3/02 , B05D3/00 , B05D3/12
CPC分类号： C23C14/3414 , C23C14/14 , H01J37/3426 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： An alkali-containing transition metal sputtering target, the method of making the same, and the method of manufacturing a solar cell using the same.
摘要翻译：含碱金属过渡金属溅射靶，其制造方法以及使用其的太阳能电池的制造方法。

29. 发明申请

US20100133093A1 Method for alkali doping of thin film photovoltaic materials 有权
标题翻译：薄膜光伏材料的碱掺杂方法
公开(公告)号：US20100133093A1
公开(公告)日：2010-06-03
申请号：US12385570
申请日：2009-04-13
申请人： Neil M. MacKie , Daniel R. Juliano , Robert B. Zubeck
发明人： Neil M. MacKie , Daniel R. Juliano , Robert B. Zubeck
IPC分类号： C23C14/34
CPC分类号： C23C14/3464 , C23C14/165 , H01L31/022425 , H01L31/0322 , H01L31/0323 , H01L31/03923 , Y02E10/541 , Y02P70/521
摘要： A method of manufacturing a solar cell includes providing a substrate, depositing a first electrode comprising an alkali-containing transition metal layer over the substrate, depositing at least one p-type semiconductor absorber layer over the first electrode, wherein the p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, depositing an n-type semiconductor layer over the p-type semiconductor absorber layer, and depositing a second electrode over the n-type semiconductor layer. The step of depositing the alkali-containing transition metal layer includes sputtering from a first target comprising the transition metal and a second target comprising the alkali metal, where a composition of the first target is different from a composition of the second target.
摘要翻译：一种制造太阳能电池的方法包括提供基板，在所述基板上沉积包含含碱过渡金属层的第一电极，在所述第一电极上沉积至少一个p型半导体吸收层，其中所述p型半导体吸收体层包括铜铟硒（CIS）基合金材料，在p型半导体吸收层上沉积n型半导体层，并在n型半导体层上沉积第二电极。沉积含碱金属过渡金属层的步骤包括从包含过渡金属的第一靶和包含碱金属的第二靶的溅射，其中第一靶的组成不同于第二靶的组成。

30. 发明授权

US07569123B1 Optimizing target erosion using multiple erosion regions in a magnetron sputtering apparatus 有权
标题翻译：在磁控溅射装置中优化使用多个侵蚀区域的目标侵蚀
公开(公告)号：US07569123B1
公开(公告)日：2009-08-04
申请号：US10853034
申请日：2004-05-25
申请人： Daniel R. Juliano , Douglas B. Hayden
发明人： Daniel R. Juliano , Douglas B. Hayden
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： C23C14/35 , H01J37/34 , H01J37/3423 , H01J37/347
摘要： In one embodiment, the erosion profile of a shaped target (e.g., hollow cathode target) of a magnetron apparatus is enhanced by using a plurality of sputtering tracks, such as plasma loops, on the target. The erosion profile may be optimized by recording the erosion profile and making adjustments to the magnetic configuration of the magnetron. The recording may include two-dimensional plots of erosion/redepostion rates or a grid overlay tracing of a static burn test, for example. The magnetic configuration of the magnetron may include a rotating magnetic array. The rotating magnetic array may be adjusted to change the shape or location of the plurality of plasma loops to achieve an optimum erosion profile. The target may have a flared lip to increase erosion on the lip, if needed.
摘要翻译：在一个实施例中，通过在目标上使用多个溅射轨迹（例如等离子体回路）来增强磁控管装置的成形靶材（例如空心阴极靶材）的侵蚀曲线。可以通过记录侵蚀曲线并对磁控管的磁性构造进行调整来优化侵蚀曲线。记录可以包括例如侵蚀/重新吸收速率的二维图或静态燃烧测试的网格覆盖跟踪。磁控管的磁性构造可以包括旋转磁阵列。可以调节旋转磁阵列以改变多个等离子体回路的形状或位置，以获得最佳的侵蚀曲线。如果需要，目标可能有一个扩张的嘴唇，以增加唇部的侵蚀。

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