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21. 发明授权

US06337498B1 Semiconductor device having directionally balanced gates and manufacturing method 失效
标题翻译：具有定向平衡栅极的半导体器件和制造方法
公开(公告)号：US06337498B1
公开(公告)日：2002-01-08
申请号：US09249296
申请日：1999-02-12
申请人： Shigeru Hasegawa , Hideo Matsuda , Yoshiro Baba , Masanobu Tsuchitani
发明人： Shigeru Hasegawa , Hideo Matsuda , Yoshiro Baba , Masanobu Tsuchitani
IPC分类号： H01L2994
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/4238
摘要： A semiconductor device such as an IGBT having trench gates in a form of stripes, and manufacturing method, wherein concentration of stresses in only a single direction is relieved and the generation of a leakage current and crystal defects in the IGBT is prevented. In one embodiment, the inside of a terminal area of an IGBT is divided into a single gate pad area and plural element areas by a wiring area. The respective element areas are arranged in such a manner that the directions of trench gates formed in the respective element areas cross at right angles with respect to the directions of trench gates of respective adjacent element areas.
摘要翻译：诸如具有条形沟槽栅极的IGBT的半导体器件以及其中单个方向上的应力集中被释放并且防止了IGBT中产生漏电流和晶体缺陷的制造方法。在一个实施例中，IGBT的端子区域的内部通过布线区域分成单个栅极焊盘区域和多个元件区域。相应的元件区域被布置成使得形成在各个元件区域中的沟槽栅极的方向相对于各个相邻元件区域的沟槽栅极的方向成直角交叉。

22. 发明授权

US5845185A Image forming apparatus 失效
标题翻译：图像形成装置
公开(公告)号：US5845185A
公开(公告)日：1998-12-01
申请号：US792759
申请日：1997-02-04
申请人： Hidekazu Sakagami , Hideo Matsuda , Osamu Fujimoto , Atsushi Ide , Kazuyuki Ohnishi
发明人： Hidekazu Sakagami , Hideo Matsuda , Osamu Fujimoto , Atsushi Ide , Kazuyuki Ohnishi
IPC分类号： G03G15/16 , G03G15/14
CPC分类号： G03G15/162
摘要： An intermediate transfer drum has at least a drum main body having a volume resistivity of 10.sup.4 to 10.sup.8 .OMEGA.cm, and an insulating layer provided on an outer surface of the drum main body. A first transfer voltage applying roller is provided inside the intermediate transfer drum so as to be opposite to a photosensitive drum and so as to be in contact with an inner surface of the intermediate transfer drum. A transfer roller is provided inside the intermediate transfer drum so as to be opposite to a second transfer grounded roller and so as to be in contact with the inner surface of the intermediate transfer drum. By thus arranging an image forming apparatus wherein image formation is carried out with respect to recording paper through the intermediate transfer drum, an optimal first transfer voltage can be applied from the photosensitive drum to the intermediate transfer drum, while an optimal second transfer voltage can be applied from the intermediate transfer drum to the recording medium. As a result, the first transfer and the second transfer are individually and simultaneously carried out. Furthermore, since the intermediate transfer drum does not become large in size, it is avoidable that the image forming apparatus becomes bulkier, while the lowering of the copying speed can also be suppressed.
摘要翻译：中间转印鼓至少具有体积电阻率为104-108欧姆·厘米的鼓主体，以及设置在鼓主体的外表面上的绝缘层。第一转印电压施加辊设置在中间转印鼓内部，以与感光鼓相对并且与中间转印鼓的内表面接触。转印辊设置在中间转印鼓内部，以便与第二转印接地辊相对并且与中间转印鼓的内表面接触。通过这样布置图像形成装置，其中通过中间转印鼓相对于记录纸进行图像形成，可以将最佳的第一转印电压从感光鼓施加到中间转印鼓，而最佳的第二转印电压可以从中间转印鼓施加到记录介质。结果，第一次转印和第二次转印单独并且同时进行。此外，由于中间转印鼓的尺寸不会变大，所以可以避免图像形成装置变得更大，同时也可以抑制复印速度的降低。

23. 发明授权

US4695871A Light-triggered semiconductor device 失效
标题翻译：光触发半导体器件
公开(公告)号：US4695871A
公开(公告)日：1987-09-22
申请号：US526807
申请日：1983-08-26
申请人： Yoshiaki Tsunoda , Hideo Matsuda
发明人： Yoshiaki Tsunoda , Hideo Matsuda
IPC分类号： G02B6/42 , H01L31/0203 , H01L31/111 , H01L23/02 , H01L23/12
CPC分类号： H01L31/0203 , G02B6/421 , G02B6/4212 , G02B6/4295 , H01L31/1113
摘要： A light-triggered semiconductor device comprising a light-triggered semiconductor chip housed in an airtight package and a light guide connected to a light-sensitive area of the semiconductor chip, wherein that end face of the light guide which faces the semiconductor chip is chosen to have a larger diameter than the light-sensitive area formed on the main surface of the semiconductor chip, and is connected to the light-sensitive area through an elastic transparent material preliminarily fixed to the light-sensitive area.
摘要翻译：一种光触发半导体器件，包括容纳在气密封装中的光触发半导体芯片和连接到半导体芯片的光敏区域的光导，其中面向半导体芯片的导光体的端面被选择为具有比形成在半导体芯片的主表面上的感光区域更大的直径，并且通过预先固定在感光区域上的弹性透明材料连接到感光区域。

24. 发明授权

US4587550A Press-packed semiconductor device with lateral fixing member 失效
标题翻译：具有侧向固定构件的压制半导体器件
公开(公告)号：US4587550A
公开(公告)日：1986-05-06
申请号：US637336
申请日：1984-08-03
申请人： Hideo Matsuda
发明人： Hideo Matsuda
IPC分类号： H01L21/52 , H01L23/051 , H01L23/48 , H01L23/36 , H01L23/10
CPC分类号： H01L24/72 , H01L23/051 , H01L2924/01005 , H01L2924/01013 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082
摘要： A press-packed semiconductor device in which means for positioning and fixing a semiconductor element with respect to an electrode disk member is improved. In a press-packed semiconductor device, a semiconductor element is press-held between a pair of electrode disk members via heat buffer plates. According to this invention, a fixing member made of electrical insulating material is provided on the peripheral portions of at least one of main surfaces of a semiconductor substrate of the semiconductor element. The inner periphery of the fixing member is formed so as to substantially contact the outer periphery of at least one of the heat buffer plate. This contact provides a reliable and easy positioning and lateral fixing of the semiconductor element against the heat buffer plate. Accordingly, to braze the electrode to the heat buffer plate of the semiconductor device becomes unnecessary.
摘要翻译：一种压电半导体器件，其中相对于电极盘部件定位和固定半导体元件的装置得到改善。在压制半导体器件中，通过热缓冲板将半导体元件压入一对电极盘部件之间。根据本发明，在半导体元件的半导体衬底的至少一个主表面的周边部分上设置由电绝缘材料制成的固定部件。固定构件的内周形成为与至少一个热缓冲板的外周基本接触。该接触提供半导体元件抵靠热缓冲板的可靠且容易的定位和横向固定。因此，不需要将电极钎焊到半导体器件的缓冲板。

25. 发明授权

US07675725B2 Constant voltage output circuit 失效
标题翻译：恒压输出电路
公开(公告)号：US07675725B2
公开(公告)日：2010-03-09
申请号：US11934598
申请日：2007-11-02
申请人： Hideo Matsuda
发明人： Hideo Matsuda
IPC分类号： H02H3/20
CPC分类号： G05F1/56 , G05F1/569
摘要： A constant voltage output circuit has an output power transistor supplied with electric power form a first input power source and a control circuit supplied with electric power from a second input power source. Here, when the voltage from the first input power source is equal to or higher than a predetermined level Va, an overcurrent protection circuit and a short-circuiting protection circuit operate. Furthermore, yet another protection circuit is provided that operates even when the voltage from the first input power source is lower than the predetermined level Va.
摘要翻译：恒定电压输出电路具有由第一输入电源供给电力的输出功率晶体管和从第二输入电源供给电力的控制电路。这里，当来自第一输入电源的电压等于或高于预定电平Va时，过电流保护电路和短路保护电路工作。此外，还提供另一保护电路，即使当来自第一输入电源的电压低于预定电平Va时也是这样。

26. 发明授权

US07518626B2 Light beam synchronization detector and printer 失效
标题翻译：光束同步检测器和打印机
公开(公告)号：US07518626B2
公开(公告)日：2009-04-14
申请号：US10963812
申请日：2004-10-14
申请人： Hideo Matsuda
发明人： Hideo Matsuda
IPC分类号： B41J2/435
CPC分类号： G06K15/1219
摘要： In this light beam synchronization detector, an enable circuit 34 outputs a first control signal Se1 to an output circuit 35 when at least one of the absolute values of a voltage signal V1 from a first amplifier 31 and a voltage signal V2 from a second amplifier 32 exceeds the absolute value of a threshold voltage −Vth, thereby putting the output circuit 35 into an operative state. The enable circuit 34 outputs a second control signal Se2 to the output circuit 35 when both the absolute values of the first output voltage V1 and the second output voltage V2 are equal to or lower than the absolute value of the threshold voltage −Vth, thereby putting the output circuit 35 into an inoperative state. This light beam synchronization detector can prevent the occurrence of an error in the detection timing of a light beam due to a change in the quantity of light of the light beam and preventing the occurrence of erroneous detection due to reflected light.
摘要翻译：在该光束同步检测器中，当来自第一放大器31的电压信号V1的绝对值和来自第二放大器32的电压信号V2的绝对值中的至少一个时，使能电路34将第一控制信号Se1输出到输出电路35 超过阈值电压-Vth的绝对值，从而使输出电路35进入工作状态。当第一输出电压V1和第二输出电压V2的绝对值均等于或低于阈值电压-Vth的绝对值时，使能电路34将第二控制信号Se2输出到输出电路35，由此将输出电路35成为不工作状态。该光束同步检测器可以防止由于光束的光量的变化引起的光束的检测定时中的误差的发生，并且防止由反射光引起的错误检测的发生。

27. 发明授权

US5608238A Semiconductor device having two insulated gates and capable of thyristor function and method for operating the same 失效
标题翻译：具有两个绝缘栅极并具有晶闸管功能的半导体器件及其操作方法
公开(公告)号：US5608238A
公开(公告)日：1997-03-04
申请号：US544918
申请日：1995-10-18
申请人： Hideo Matsuda
发明人： Hideo Matsuda
IPC分类号： H01L29/74 , H01L29/10 , H01L29/739 , H01L29/745 , H01L29/749 , H01L29/78 , H01L31/111
CPC分类号： H01L29/7395 , H01L29/1095 , H01L29/7455 , H01L29/749
摘要： A semiconductor device and a method for operating the same includes a first P-type semiconductor layer and a first N-type semiconductor layer provided thereon. A plurality of second P-type semiconductor layers and a plurality of third P-type semiconductor layers are formed on the surface of the first N-type semiconductor layer. A plurality of second N-type semiconductor layers are formed on their respective surfaces of the third P-type semiconductor layers. Emitter electrodes are provided on the second P-type semiconductor layers and second N-type semiconductor layers. A plurality of first gate electrodes is each provided above the first N-type semiconductor layer between the adjacent third P-type semiconductor layers. A plurality of second gate electrodes are each provided above the first N-type semi-conductor layer between the second P-type semiconductor layer and the third P-type semiconductor layer. A collector electrode is provided under the first P-type semiconductor layer. If the timing at which a bias is applied to the first gate electrodes and second gate electrodes is controlled, an operation mode in which the device serves as a thyristor and an operation mode in which the device serves as an IGBT can be switched to each other. Therefore, the semiconductor device, which can be turned on/turned off, is capable of being turned off at high speed when an on-state voltage is low.
摘要翻译：半导体器件及其操作方法包括第一P型半导体层和设置在其上的第一N型半导体层。在第一N型半导体层的表面上形成有多个第二P型半导体层和多个第三P型半导体层。在第三P型半导体层的各自表面上形成有多个第二N型半导体层。发射极设置在第二P型半导体层和第二N型半导体层上。多个第一栅电极分别设置在相邻的第三P型半导体层之间的第一N型半导体层的上方。在第二P型半导体层和第三P型半导体层之间的第一N型半导体层的上方分别设置有多个第二栅电极。集电极设置在第一P型半导体层的下方。如果对第一栅电极和第二栅极施加偏压的定时，则可以将器件用作晶闸管的操作模式和器件用作IGBT的操作模式彼此切换。因此，当导通状态电压低时，能够接通/关断的半导体器件能够高速关断。

28. 发明授权

US5106552A Process of producing a filter element of composite fibers 失效
标题翻译：生产复合纤维过滤元件的工艺
公开(公告)号：US5106552A
公开(公告)日：1992-04-21
申请号：US320167
申请日：1989-03-07
申请人： Shigeru Goi , Hideo Matsuda , Kazuyoshi Nakazawa
发明人： Shigeru Goi , Hideo Matsuda , Kazuyoshi Nakazawa
IPC分类号： B01D39/16 , D01F8/06 , D01F8/14 , D04H3/073 , D04H3/147 , D04H3/153
CPC分类号： D01F8/14 , B01D39/163 , D01F8/06 , B01D2239/0233 , B01D2239/0695 , B01D2239/086 , B01D2239/1225 , B01D2239/1291
摘要： Polyolefin/polyester composite fibers having a low apparent Young's modulus and a filter element using the composite fibers are produced by subjecting a polyolefin as sheath component and a polyester as core component to composite spinning, stretching the resulting unstretched filaments to twice or more the original length at a temperature higher than the secondary transition point of the polyester by 20.degree. C. or higher and lower than the melting point of the polyolefin and annealing the stretched filaments at the above-mentioned temperature for 30 seconds or more, and having an apparent Young's modulus of 210 Kg/cm.sup.2 or less, and by winding up the above composite fibers on a core while heating the composite fibers to the melt-adhesion temperature of the sheath component, adjusting the void content to a desired one, followed by cooling and taking out the core.

29. 发明授权

US4958215A Press-contact flat type semiconductor device 失效
标题翻译：压接式扁平型半导体器件
公开(公告)号：US4958215A
公开(公告)日：1990-09-18
申请号：US384801
申请日：1989-07-25
申请人： Shinjiro Kojima , Hideo Matsuda , Masami Iwasaki , Yoshinari Uetake
发明人： Shinjiro Kojima , Hideo Matsuda , Masami Iwasaki , Yoshinari Uetake
IPC分类号： H01L29/74 , H01L21/52 , H01L23/051 , H01L23/48
CPC分类号： H01L23/051 , H01L24/72 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01043 , H01L2924/01047 , H01L2924/01057 , H01L2924/01074 , H01L2924/01082 , H01L2924/10253 , H01L2924/1301
摘要： A press-contact flat type semiconductor device is disclosed which, without alloy-bonding a silicon pellet to a molybdenum or tungsten disc, assures a uniform press contact because a warp on the silicon pellet is largely reduced in comparison with a conventional device. A silver sheet is omitted between an anode electrode post and the silicon pellet to absorb a warp on the pellet. It is only necessary to insert a molybdenum or tungsten disc there, instead, which is thinner than a counterpart of the conventional device. Between the cathode electrode of the silicon pellet and a cathode electrode post use is made of, in the place of a conventional molybdenum foil and silver cap, an annealed soft copper cap of better malleability and, in the place of conventional molybdenum disc, an inexpensive hard copper sheet of adequate thickness and rigidity, not annealed, which can assure uniform press contact with the cathode electrode surface which oppositely confronts a gate lead connection circuit of a cathode electrode post. Since the silicon pellet is not alloy-bonded to the molybdenum or tungsten disc, it is simple and easy to form a bevelled structure, and to perform a silicone insulating rubber coating operation, so as to obtain the anode-to-cathode withstand voltage of the silicon pellet. Thus an inexpensive press-contact flat type semiconductor device of a long life can be provided which ensures more uniform press contact than a conventional semiconductor device.

30. 发明授权

US4724475A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4724475A
公开(公告)日：1988-02-09
申请号：US871145
申请日：1986-06-03
申请人： Hideo Matsuda
发明人： Hideo Matsuda
IPC分类号： H01L29/43 , H01L21/28 , H01L21/331 , H01L23/051 , H01L23/48 , H01L23/482 , H01L29/417 , H01L29/73 , H01L29/74 , H01L23/42 , H01L23/44 , H01L23/46
CPC分类号： H01L23/051 , H01L23/4824 , H01L24/72 , H01L29/41708 , H01L29/41716 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/1301 , H01L2924/1305
摘要： A semiconductor device has the following components: a semiconductor substrate; a first region of a first conductivity type which is formed in the surface of the semiconductor substrate; a second region of a second conductivity type which is formed adjacent to the first region, in the surface of the semiconductor substrate; a first electrode which is formed on the first region; and a second electrode which is formed on the second region, the first electrode being so arranged as to be connected outside of the device, in accordance with a pressure contact. The first electrode comprises: a lower layer which is formed on the first region and consists of a metal capable of coming into ohmic contact with the semiconductor substrate; an intermediate layer of a hard conductive material, which layer is formed on the lower layer and is thicker than the lower layer; and an upper layer of a soft material, which layer is formed on the intermediate layer and is thinner than the intermediate layer.
摘要翻译：半导体器件具有以下部件：半导体衬底; 形成在所述半导体衬底的表面中的第一导电类型的第一区域; 在所述半导体衬底的表面中形成与所述第一区相邻形成的第二导电类型的第二区; 形成在所述第一区域上的第一电极; 以及形成在所述第二区域上的第二电极，所述第一电极被布置为根据压力接触连接到所述装置的外部。第一电极包括：下层，其形成在第一区域上并由能够与半导体衬底欧姆接触的金属构成; 硬质导电材料的中间层，该层形成在下层上且比下层更厚; 和软质材料的上层，该层在中间层上形成并且比中间层薄。

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