专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US5244501A Apparatus for chemical vapor deposition 失效
标题翻译：化学气相沉积设备
公开(公告)号：US5244501A
公开(公告)日：1993-09-14
申请号：US733373
申请日：1991-07-22
申请人： Izumi Nakayama , Akitoshi Suzuki , Hiroyuki Nawa , Motohiro Kaneko , Yoshiro Kusumoto , Kazuo Takakuwa , Tetsuya Ikuta
发明人： Izumi Nakayama , Akitoshi Suzuki , Hiroyuki Nawa , Motohiro Kaneko , Yoshiro Kusumoto , Kazuo Takakuwa , Tetsuya Ikuta
IPC分类号： C23C16/44 , C23C16/455 , C23C16/48 , H01L21/768
CPC分类号： C23C16/45519 , C23C16/455 , C23C16/481 , H01L21/76879
摘要： An apparatus for a chemical vapor deposition in which at least one substrate which has partially an insulating film on the surface thereof is disposed in a pressure reduced reaction chamber, the reaction chamber is provided with a nozzle for feeding a reactive gas into the reaction chamber, and a light source is provided for emitting a light beam to heat the substrate. The combination of substrate heating source using infrared rays and a laminarized jet of reactive gas is utilized for maintaining the selectivity, facilitating the thin film forming reaction, and improving the high reproducibility and controllability.
摘要翻译：一种用于化学气相沉积的装置，其中至少一个在其表面上具有部分绝缘膜的基板设置在减压反应室中，反应室设置有用于将反应性气体进料到反应室中的喷嘴，并且提供用于发射光束以加热衬底的光源。使用红外线的基板加热源和反应气体的层流喷射的组合用于保持选择性，促进薄膜形成反应，提高高再现性和可控性。

22. 发明授权

US10388517B2 Epitaxial substrate for electronic device and method of producing the same 有权
公开(公告)号：US10388517B2
公开(公告)日：2019-08-20
申请号：US13550115
申请日：2012-07-16
申请人： Tetsuya Ikuta , Jo Shimizu , Tomohiko Shibata
发明人： Tetsuya Ikuta , Jo Shimizu , Tomohiko Shibata
IPC分类号： H01L29/66 , H01L21/02 , H01L29/737 , H01L29/20
摘要： An epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a main current conducting direction and a warp configuration of the epitaxial substrate is adequately controlled, as well as a method of producing the epitaxial substrate. Specifically, the epitaxial substrate for an electron device, including: a Si single crystal substrate; and a Group III nitride laminated body formed by epitaxially growing plural Group III nitride layers on the Si single crystal substrate, wherein a lateral direction of the epitaxial substrate is defined as a main current conducting direction, is characterized in that the Si single crystal substrate is a p-type substrate having a specific resistance value of not larger than 0.01 Ω·cm.

23. 发明授权

US08469760B2 Light emitting device and method for producing same 失效
标题翻译：发光元件及其制造方法
公开(公告)号：US08469760B2
公开(公告)日：2013-06-25
申请号：US11691509
申请日：2007-03-27
申请人： Tsukasa Maruyama , Masahiro Gotoh , Tetsuya Ikuta
发明人： Tsukasa Maruyama , Masahiro Gotoh , Tetsuya Ikuta
IPC分类号： B05D5/06
CPC分类号： H05B33/20 , C09K11/0883 , C09K11/7721 , C09K11/7734 , H01L2224/48091 , H01L2224/48247 , H05B33/14 , H01L2924/00014
摘要： A light emitting device 10 includes: a lead frame 12a serving as a mounting portion having a cup 13; a light emitting element 14, mounted on the bottom face 13a of the cup, for emitting light having a predetermined peak wavelength; a layer of large phosphor particles 16, adsorbed and formed on the light emitting element, for absorbing light emitted from the light emitting element and for emitting light having a longer peak wavelength than that of the light emitted from the light emitting element; small phosphor particles 18, which have a smaller particle diameter than that of the large phosphor particles, for absorbing at least one of light emitted from the large phosphor particles and light emitted from the light emitting element and for emitting light having a longer peak wavelength than that of the at least one of the light emitted from the large phosphor particles and the light emitted from the light emitting element; and a sealing member 20, in which the small phosphor particles are dispersed, for sealing the light emitting element and the layer of large phosphor particles in the cup.
摘要翻译：发光装置10包括：作为具有杯13的安装部的引线框12a; 安装在杯的底面13a上的发光元件14，用于发射具有预定峰值波长的光; 吸收并形成在发光元件上的用于吸收从发光元件发射的光并发出具有比从发光元件发出的光的峰值波长更长的光的大荧光体颗粒16的层; 小荧光体颗粒18具有比大荧光体颗粒小的粒径，用于吸收从大荧光体颗粒发射的光和从发光元件发射的光中的至少一种，并且用于发射具有比磷光体颗粒更长的峰值波长的光从大荧光体颗粒发射的光中的至少一种光和从发光元件发射的光中的至少一种; 以及其中分散有小荧光体颗粒的密封构件20，以密封杯中的发光元件和大的荧光体颗粒层。

24. 发明授权

US08164254B2 Light-emitting device and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08164254B2
公开(公告)日：2012-04-24
申请号：US11987177
申请日：2007-11-28
申请人： Tsukasa Maruyama , Tetsuya Ikuta
发明人： Tsukasa Maruyama , Tetsuya Ikuta
IPC分类号： H01J1/62
CPC分类号： H01J9/221 , H01L2224/48091 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A light-emitting device of the present invention includes: a light-emitting element; and a phosphor layer containing phosphors that absorb light from the light-emitting element and wavelength-convert the absorbed light to emit light. The phosphor layer has a structure in which the phosphors are disposed on an applied adhesive with a thickness equal to or less than an average particle size of the phosphors. A thickness of the phosphor layer is equal to or less than five times the average particle size of the phosphors, and an occupancy ratio of the phosphors in the phosphor layer is 50% or more. Further, the phosphors disposed on the adhesive has an adjusted particle size.
摘要翻译：本发明的发光装置包括：发光元件; 以及荧光体层，其含有从发光元件吸收光的荧光体，并对所吸收的光进行波长转换以发光。荧光体层具有这样的结构，其中荧光体被设置在等于或小于荧光体的平均粒度的厚度的施加的粘合剂上。荧光体层的厚度为荧光体的平均粒径的5倍以下，荧光体层的荧光体的占有率为50％以上。此外，设置在粘合剂上的荧光体具有调节的粒度。

25. 发明申请

US20120091435A1 EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME 有权
标题翻译：用于电子器件的外延衬底及其制造方法
公开(公告)号：US20120091435A1
公开(公告)日：2012-04-19
申请号：US13319910
申请日：2010-05-10
申请人： Tetsuya Ikuta , Jo Shimizu , Tomohiko Shibata , Ryo Sakamoto , Tsuneo Ito
发明人： Tetsuya Ikuta , Jo Shimizu , Tomohiko Shibata , Ryo Sakamoto , Tsuneo Ito
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L29/207 , H01L21/02378 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L21/0254 , H01L29/1075 , H01L29/155 , H01L29/2003 , H01L29/7786
摘要： An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same.The epitaxial substrate includes a conductive SiC single crystal substrate, a buffer as an insulating layer on the SiC single crystal substrate, and a main laminate formed by epitaxially growing a plurality of Group III nitride layers on the buffer. Further, the buffer includes at least an initial growth layer in contact with the SiC single crystal substrate and a superlattice laminate having a superlattice multi-layer structure on the initial growth layer. The initial growth layer is made of a Ba1Alb1Gac1Ind1N material. Furthermore, the superlattice laminate is configured by alternately stacking a first layer made of a Ba2Alb2Gac2Ind2N material and a second layer made of a Ba3Alb3Gac3Ind3N material having a different band gap from the first layer.
摘要翻译：提供了一种用于电子器件的外延衬底，其可以提高垂直击穿电压并提供其制造方法。外延衬底包括导电SiC单晶衬底，在SiC单晶衬底上作为绝缘层的缓冲层，以及通过在缓冲器上外延生长多个III族氮化物层而形成的主层压体。此外，缓冲器至少包括与SiC单晶衬底接触的初始生长层和在初始生长层上具有超晶格多层结构的超晶格层压体。初始生长层由Ba1Alb1Gac1Ind1N材料制成。此外，超晶格层叠体通过交替堆叠由Ba2Alb2Gac2Ind2N材料制成的第一层和由与第一层具有不同带隙的Ba3Alb3Gac3Ind3N材料制成的第二层而构成。

26. 发明授权

US08124440B2 Solid-state imaging device and method for making the same, and manufacturing substrate for solid-state imaging device 有权
标题翻译：固态成像装置及其制造方法，以及制造用于固态成像装置的基板
公开(公告)号：US08124440B2
公开(公告)日：2012-02-28
申请号：US12550553
申请日：2009-08-31
申请人： Tetsuya Ikuta , Yuki Miyanami
发明人： Tetsuya Ikuta , Yuki Miyanami
IPC分类号： H01L31/072 , H01L31/0264 , H01L27/148
CPC分类号： H01L27/14687 , H01L27/1464
摘要： A method for making a solid-state imaging device includes forming a pinning layer, which is a P-type semiconductor layer or an N-type semiconductor layer, on a first substrate by deposition; forming a semiconductor layer on the pinning layer; forming a photoelectric conversion unit in the semiconductor layer, the photoelectric conversion unit being configured to convert incident light into an electrical signal; forming, on the semiconductor layer, a transistor of a pixel unit and a transistor of a peripheral circuit unit disposed in the periphery of the pixel unit, and then forming a wiring section on the semiconductor layer; bonding a second substrate on the wiring section; and removing the first substrate after the second substrate is bonded.
摘要翻译：制造固态成像装置的方法包括通过沉积在第一基板上形成P型半导体层或N型半导体层的钉扎层; 在钉扎层上形成半导体层; 在所述半导体层中形成光电转换单元，所述光电转换单元将入射光转换为电信号; 在所述半导体层上形成像素单元的晶体管和设置在所述像素单元的周围的外围电路单元的晶体管，然后在所述半导体层上形成布线区域; 将第二基板接合在所述布线部分上; 以及在所述第二基板接合之后移除所述第一基板。

27. 发明授权

US4994301A ACVD (chemical vapor deposition) method for selectively depositing metal on a substrate 失效
标题翻译：用于在衬底上选择性地沉积金属的ACVD（化学气相沉积）方法
公开(公告)号：US4994301A
公开(公告)日：1991-02-19
申请号：US68644
申请日：1987-06-30
申请人： Yoshiro Kusumoto , Kazuo Takakuwa , Tetsuya Ikuta , Akitoshi Suzuki , Izumi Nakayama
发明人： Yoshiro Kusumoto , Kazuo Takakuwa , Tetsuya Ikuta , Akitoshi Suzuki , Izumi Nakayama
IPC分类号： C23C16/04 , C23C16/44 , C23C16/455 , C23C16/48
CPC分类号： C23C16/45504 , C23C16/045 , C23C16/45519 , C23C16/45563 , C23C16/481 , Y10S427/101
摘要： A wafer, in which at least one via hole is made in an insulating film formed on the substrate, and a first metallic film is formed in the via hole is prepared. The wafer is held in a wafer holder in a reaction chamber under reduced pressure. WF.sub.6 gas and H.sub.2 gas are introduced into the chamber and light from a heating lamp is directed onto the wafer, such that a difference in temperature is created between the insulating film and the first metallic film such that a second metallic film of W is formed only on the first metallic film in the chemical vapor deposition process. The temperature difference is due to the differences of the adsorption ratios of infrared light of the insulating film, the substrate and the first metallic film. The WF.sub.6 gas and H.sub.2 gas are made to flow in flat or sheet form substantially parallel to the surface of the wafer, and in inernt gas, such as Ar, is made to flow toward the surface of the wafer to control the flow of WF.sub.6 and H.sub.2 gas.
摘要翻译：制备在基板上形成有绝缘膜中的至少一个通路孔和在通路孔中形成第一金属膜的晶片。将晶片在减压下保持在反应室中的晶片保持器中。将WF6气体和H2气体引入室中，并且将来自加热灯的光引导到晶片上，使得在绝缘膜和第一金属膜之间产生温度差异，使得W的第二金属膜仅形成在化学气相沉积工艺中的第一金属膜上。温度差是由于绝缘膜，基板和第一金属膜的红外线的吸附率的差异。使WF6气体和H 2气体以基本上平行于晶片表面的平面或片状形式流动，并且使诸如Ar的惰性气体流向晶片的表面以控制WF6和 H2气。

28. 发明授权

US10727303B2 Group III nitride epitaxial substrate and method for manufacturing the same 有权
公开(公告)号：US10727303B2
公开(公告)日：2020-07-28
申请号：US14131987
申请日：2012-07-11
申请人： Tetsuya Ikuta , Tomohiko Shibata
发明人： Tetsuya Ikuta , Tomohiko Shibata
IPC分类号： H01L29/15 , H01L29/66 , H01L29/778 , H01L21/02 , C30B29/40 , C30B29/68 , C30B25/02 , H01L29/20 , H01L33/00
摘要： Provided is a Group III nitride epitaxial substrate that can suppress the occurrence of breakage during a device formation process and a method for manufacturing the same. A Group III nitride epitaxial substrate according to the present invention includes a Si substrate, an initial layer in contact with the Si substrate, and a superlattice laminate, formed on the initial layer, including a plurality of sets of laminates, each of the laminates including, in order, a first layer made of AlGaN with an Al composition ratio greater than 0.5 and 1 or less and a second layer made of AlGaN with an Al composition ratio greater than 0 and 0.5 or less. The Al composition ratio of the second layer progressively decreases with distance from the substrate.

29. 发明授权

US08946863B2 Epitaxial substrate for electronic device comprising a high resistance single crystal substrate on a low resistance single crystal substrate, and method of manufacturing 有权
标题翻译：包含低电阻单晶衬底上的高电阻单晶衬底的电子器件外延衬底及其制造方法
公开(公告)号：US08946863B2
公开(公告)日：2015-02-03
申请号：US13388804
申请日：2010-08-02
申请人： Tetsuya Ikuta , Daisuke Hino , Ryo Sakamoto , Tomohiko Shibata
发明人： Tetsuya Ikuta , Daisuke Hino , Ryo Sakamoto , Tomohiko Shibata
IPC分类号： H01L29/66 , H01L29/778 , H01L21/18 , H01L29/812 , H01L21/02
CPC分类号： H01L29/7786 , H01L21/02381 , H01L21/02488 , H01L21/0254 , H01L21/02658 , H01L21/187 , H01L29/66462 , H01L29/66863 , H01L29/812
摘要： An epitaxial substrate for electronic devices, in which current flows in a lateral direction and of which warpage configuration is properly controlled, and a method of producing the same. The epitaxial substrate for electronic devices is produced by forming a bonded substrate by bonding a low-resistance Si single crystal substrate and a high-resistance Si single crystal substrate together; forming a buffer as an insulating layer on a surface of the bonded substrate on the high-resistance Si single crystal substrate side; and producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate. The resistivity of the low-resistance Si single crystal substrate is 100 Ω·cm or less, and the resistivity of the high-resistance Si single crystal substrate is 1000 Ω·cm or more.
摘要翻译：电流装置的外延基板及其制造方法，其中电流沿横向流动并且翘曲构造被适当地控制。通过将低电阻Si单晶衬底和高电阻Si单晶衬底结合在一起来形成键合衬底来制造电子器件外延衬底; 在高电阻Si单晶衬底侧的键合衬底的表面上形成缓冲层作为绝缘层; 以及通过在缓冲器上外延生长多个III族氮化物层以形成主层压板来制造外延衬底。低电阻Si单晶衬底的电阻率为100Ω·cm·cm以下，高电阻Si单晶衬底的电阻率为1000Ω·cm·cm以上。

30. 发明申请

US20120223328A1 GROUP III NITRIDE EPITAXIAL LAMINATE SUBSTRATE 有权
标题翻译： III类氮化物外延层压板
公开(公告)号：US20120223328A1
公开(公告)日：2012-09-06
申请号：US13502847
申请日：2010-11-04
申请人： Tetsuya Ikuta , Jo Shimizu , Tomohiko Shibata
发明人： Tetsuya Ikuta , Jo Shimizu , Tomohiko Shibata
IPC分类号： H01L29/205
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/155 , H01L29/205
摘要： A Group III nitride epitaxial laminate substrate comprising a substrate, a buffer and a main laminate in this order, wherein the buffer includes an initial growth layer, a first superlattice laminate and a second superlattice laminate in this order, the first superlattice laminate includes five to 20 sets of first AlN layers and second GaN layers, the first AlN layers and the second GaN layers being alternately stacked, and each one set of the first AlN layer and the second GaN layer has a thickness of less than 44 nm, the second superlattice laminate includes a plurality of sets of first layers made of an AlN material or an AlGaN material and second layers made of an AlGaN material having a different band gap from the first layers, the first and second layers being alternately stacked.
摘要翻译：一种III族氮化物外延层叠基板，其依次包括基板，缓冲层和主层压板，其中缓冲层依次包括初始生长层，第一超晶格层压板和第二超晶格层压板，第一超晶格层压板包括五个至 20组第一AlN层和第二GaN层，第一AlN层和第二GaN层交替层叠，并且每组第一AlN层和第二GaN层的厚度小于44nm，第二超晶格层叠体包括由AlN材料或AlGaN材料制成的多组第一层和由与第一层具有不同带隙的AlGaN材料制成的第二层，第一层和第二层交替堆叠。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式