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    • 21. 发明授权
    • Image processing method
    • 图像处理方法
    • US5633728A
    • 1997-05-27
    • US534163
    • 1995-09-26
    • Masayoshi TachiharaAkira Asai
    • Masayoshi TachiharaAkira Asai
    • G06T9/00H04N1/41H04N5/781H04N5/926H04N9/804H04N1/407H04N7/12
    • H04N5/9261G06T9/00H04N5/781H04N9/8042
    • A method of recording (preserving) and reproducing an image is disclosed. The x and y axes are assumed on the plane of an original image, the z axis (density axis) is assumed to be perpendicular to the x and y axes, and a space defined by the x, y, and z axes is divided into rectangular solid cells. The volume ratio below a density distribution curved surface of the volume of each rectangular solid is recorded. Upon reproduction, the curved surface is reproduced based on the volume ratios of the rectangular solids which the density distribution curved surface crosses, and those of rectangular solids adjacent thereto.In a four-dimensional Euclidean space defined by an image plane (x,y), a density or brightness D, and time or a frame f, an image is expressed by a solid in this space. This space is divided into four-dimensional rectangular solids, and an amount proportional to the volume of the solid in each rectangular solid is recorded or transmitted. Upon reproduction, the solid is reproduced based on the volume amounts of the rectangular solids and those of rectangular solids adjacent thereto, thereby reproducing a dynamic image.
    • 公开了记录(保存)和再现图像的方法。 x和y轴假设在原始图像的平面上,z轴(密度轴)被假设为垂直于x和y轴,并且由x,y和z轴定义的空间被划分为 矩形固体电池。 记录每个长方体体积的密度分布曲面以下的体积比。 在再现时,基于密度分布曲面交叉的矩形固体的体积比和与其相邻的矩形固体的体积比,再现曲面。 在由图像平面(x,y),密度或亮度D以及时间或帧f限定的四维欧几里得空间中,在该空间中用固体表示图像。 该空间被分成四维矩形固体,并且记录或传输与每个矩形固体中的固体的体积成比例的量。 在再现时,基于矩形固体的体积量和与其相邻的矩形固体的体积量再现固体,从而再现动态图像。
    • 27. 发明授权
    • Liquid jet method, recording head using the method and recording
apparatus using the method
    • 液体喷射方法,使用方法记录方法和记录装置
    • US5218376A
    • 1993-06-08
    • US692943
    • 1991-04-29
    • Akira Asai
    • Akira Asai
    • B41J2/05B41J2/14
    • B41J2/1404B41J2002/14169B41J2002/14379B41J2002/14387B41J2202/11
    • A liquid jet method for ejecting liquid using a bubble created by heating the liquid in a passage, characterized in that a non-dimensional number Z which is determined by the nature of the liquid, a heat flux and a configuration of the passage and which is specific to a recording head is not less than 0.5 and not more than 16; whereZ.ident.(.pi./6).sup.1/2 Tgk(p.sub.g /q.sub.0).sup.3/2 /(.rho..sub.g Lg.multidot.a.multidot.S.sub.H A).sup.1/2 ;Tg is a superheat limit temperature of the major component of the liquid;Pg is a saturated vapor pressure of the major component of the liquid at temperature Tg;.rho.g is a saturated vapor density of the major component of the liquid at temperature Tg;Lg is a latent image of vaporization of the major component of the liquid at temperature Tg;k is a heat conductivity of the major component of the liquid at the temperature of the recording head before heating;a is a thermal diffusivity of the major component of the liquid at the temperature of the recording head before heating;q.sub.0 is a flux of the heat which heats the liquid;S.sub.H is an area of that part (heating surface of the heat generating element) which heats the liquid;A is an inertance of the passage under the conditions that the heating surface is a pressure source, that the liquid supply opening and the liquid ejection opening are open boundaries, and that the wall defining the passage is a wall (fixed) boundary;.pi. is the number .pi.;W is the work done by a bubble on the liquid, andQ is the heat applied from the heat generating element to the liquid from the start of the heating to the creation of the bubble.
    • 29. 发明授权
    • CMOS and HCMOS semiconductor integrated circuit
    • CMOS和HCMOS半导体集成电路
    • US07564073B2
    • 2009-07-21
    • US11294566
    • 2005-12-06
    • Haruyuki SoradaAkira AsaiTakeshi TakagiAkira InoueYoshio Kawashima
    • Haruyuki SoradaAkira AsaiTakeshi TakagiAkira InoueYoshio Kawashima
    • H01L27/04
    • H01L21/823807
    • A semiconductor integrated circuit fabrication method according to this invention includes: a step of forming a pair of first device forming regions and a pair of second device forming regions in a surface layer portion of a semiconductor substrate by surrounding each of the regions by device isolation; a step of forming a first oxide film covering the surface of the semiconductor substrate after the preceding step; a step of removing an intended portion of the first oxide film to expose the pair of second device forming regions; a step of forming a pair of heterojunction structures, by selective epitaxial growth, on the pair of second device forming regions thus exposed; a step of forming a second oxide film covering the surface of the substrate after the preceding step; and a step of forming a pair of gate electrodes above each of the pair of first device forming regions and the pair of second device forming regions, whereby a normal complementary MOS transistor and a heterojunction complementary MOS transistor are eventually formed in the pair of first device forming regions and the pair of second device forming regions, respectively.
    • 根据本发明的半导体集成电路制造方法包括:通过器件隔离来围绕每个区域来在半导体衬底的表面层部分中形成一对第一器件形成区域和一对第二器件形成区域的步骤; 在前述步骤之后形成覆盖半导体衬底的表面的第一氧化物膜的步骤; 去除所述第一氧化物膜的预期部分以暴露所述一对第二器件形成区域的步骤; 通过选择性外延生长形成一对异质结结构在由此露出的一对第二器件形成区上的步骤; 在上述步骤之后形成覆盖基板表面的第二氧化膜的步骤; 以及在所述一对第一器件形成区域和所述一对第二器件形成区域中的每一个上形成一对栅电极的步骤,由此在所述一对第一器件形成区域中最终形成正常互补MOS晶体管和异质结互补MOS晶体管 形成区域和一对第二装置形成区域。
    • 30. 发明授权
    • Optimum design method, and apparatus, and program for the same
    • 最佳设计方法,装置和程序相同
    • US07319943B2
    • 2008-01-15
    • US10735143
    • 2003-12-11
    • Teruyoshi WashizawaAkira AsaiMasayoshi TachiharaKatsuhiko SinjoNobuhiro Yoshikawa
    • Teruyoshi WashizawaAkira AsaiMasayoshi TachiharaKatsuhiko SinjoNobuhiro Yoshikawa
    • G06F17/50G06F9/00
    • G06F17/11
    • In an optimum design method comprising a first solution determining step of solving an optimization problem of a first evaluation function for a state variable vector with a design variable vector being as a parameter, and a second solution determining step of solving an optimization problem of a second evaluation function for the design variable vector and the state variable vector thus obtained, the second solution determining step includes the steps of computing a gradient vector of the second evaluation function for the design variable vector, computing a first coefficient based on a value of a norm of the gradient vector, computing a search vector based on the first coefficient, computing a second coefficient, and updating the design variable vector based on the second coefficient. The second coefficient computing step includes the first solution determining step, the first solution determining step is executed as an iterative method based on the gradient vector, and the state variable vector is not initialized during iteration. The optimum design method is precisely adaptable for structural changes.
    • 一种最优设计方法,包括:第一解决方案确定步骤,用于以设计变量向量作为参数来求解用于状态变量向量的第一评估函数的优化问题;以及第二解决方案确定步骤,用于求解第二 第二解决方案确定步骤包括以下步骤:计算用于设计变量向量的第二评估函数的梯度向量,基于规范的值计算第一系数;对于设计变量向量和状态变量向量的评估函数, 的梯度向量,基于第一系数计算搜索向量,计算第二系数,并且基于第二系数更新设计变量向量。 第二系数计算步骤包括第一解决方案确定步骤,基于梯度向量作为迭代方法执行第一解决方案确定步骤,并且在迭代期间不初始化状态变量向量。 最佳设计方法适用于结构变化。