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21. 发明申请

US20100038553A1 SYSTEM AND METHOD OF BEAM ENERGY IDENTIFICATION FOR SINGLE WAFER ION IMPLANTATION 有权
标题翻译：用于单波长植入的光束能量鉴定系统和方法
公开(公告)号：US20100038553A1
公开(公告)日：2010-02-18
申请号：US12190736
申请日：2008-08-13
申请人： Shu Satoh
发明人： Shu Satoh
IPC分类号： G01K1/08 , H01J37/08
CPC分类号： H01J37/304 , H01J37/05 , H01J37/09 , H01J2237/053 , H01J2237/30433
摘要： The present invention involves a beam energy identification system, comprising an accelerated ion beam, wherein the accelerated ion beam is scanned in a fast scan axis within a beam scanner, wherein the beam scanner is utilized to deflect the accelerated ion beam into narrow faraday cups downstream of the scanner, wherein a difference in scanner voltage or current to position the beam into the Faraday cups is utilized to calculated the energy of ion beam.
摘要翻译：本发明涉及一种束能量识别系统，其包括加速的离子束，其中加速的离子束以束扫描器内的快速扫描轴扫描，其中该束扫描器用于将加速的离子束偏转到下游的法拉第杯中其中利用扫描仪电压或电流将光束定位到法拉第杯中的差异来计算离子束的能量。

22. 发明授权

US07528390B2 Broad beam ion implantation architecture 有权
标题翻译：宽束离子注入架构
公开(公告)号：US07528390B2
公开(公告)日：2009-05-05
申请号：US11540897
申请日：2006-09-29
申请人： Shu Satoh
发明人： Shu Satoh
IPC分类号： H01J37/08 , H01J37/317 , H01J37/302
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/14 , H01J2237/049 , H01J2237/055 , H01J2237/057
摘要： An ion implantation system for providing a mass analyzed ribbon beam that comprises an ion beam source that includes a plasma source and an extraction component, wherein the extraction component is configured to extract a diverging ion beam and direct the ion beam to a window frame magnet assembly. The window frame magnet assembly comprises two pairs of coils orthogonally arranged within a window shaped yoke to produce an independently controllable uniform cross-field magnetic field. The first set of coils create an uniform field across the width of the diverging beam to convert it to a uniform parallel broad ion beam. The second set of coils bend the sheet of the ion beam in orthogonal direction to give mass dispersion for ion mass selection.
摘要翻译：一种用于提供质量分析的带状束的离子注入系统，其包括包括等离子体源和提取部件的离子束源，其中所述提取部件被配置为提取发散的离子束并将所述离子束引导到窗框磁体组件。窗框磁体组件包括正交布置在窗形磁轭内的两对线圈，以产生可独立控制的均匀的交叉磁场。第一组线圈在发散光束的宽度上形成均匀的场，以将其转换成均匀的平行宽离子束。第二组线圈在垂直方向上弯曲离子束的片材，以提供用于离子质量选择的质量分散。

23. 发明申请

US20120025107A1 Versatile Beam Glitch Detection System 有权
标题翻译：多功能光束检测系统
公开(公告)号：US20120025107A1
公开(公告)日：2012-02-02
申请号：US12846313
申请日：2010-07-29
申请人： Shu Satoh
发明人： Shu Satoh
IPC分类号： G21K5/10
CPC分类号： H01J37/3045 , H01J37/3171 , H01J2237/24535 , H01J2237/30455 , H01J2237/31703
摘要： A glitch duration threshold is determined based on an allowable dose uniformity, a number of passes of a workpiece through an ion beam, a translation velocity, and a beam size. A beam dropout checking routine repeatedly measures beam current during implantation. A beam dropout counter is reset each time beam current is sufficient. On a first observation of beam dropout, a counter is incremented and a position of the workpiece is recorded. On each succeeding measurement, the counter is incremented if beam dropout continues, or reset if beam is sufficient. Thus, the counter indicates a length of each dropout in a unit associated with the measurement interval. The implant routine stops only when the counter exceeds the glitch duration threshold and a repair routine is performed, comprising recalculating the glitch duration threshold based on one fewer translations of the workpiece through the beam, and performing the implant routine starting at the stored position.
摘要翻译：毛刺持续时间阈值基于允许的剂量均匀性，通过离子束的工件的通过次数，平移速度和光束尺寸来确定。光束离子检测程序在植入期间重复测量束电流。每次射束电流足够时，光束压差计数器都被复位。在第一次观察光束偏移时，计数器递增，并记录工件的位置。在每次后续的测量中，如果光束失效继续，计数器就会增加，如果光束足够，则重置。因此，计数器指示与测量间隔相关联的单元中的每个压差的长度。只有当计数器超过毛刺持续时间阈值并执行修复程序时，植入程序才停止，包括基于通过束的工件的一个较少的平移重新计算毛刺持续时间阈值，以及从存储位置开始执行注入程序。

24. 发明授权

US08080814B2 Method for improving implant uniformity during photoresist outgassing 有权
标题翻译：在光致抗蚀剂除气期间改善植入物均匀性的方法
公开(公告)号：US08080814B2
公开(公告)日：2011-12-20
申请号：US12717536
申请日：2010-03-04
申请人： Shu Satoh
发明人： Shu Satoh
IPC分类号： H01J37/302 , H01J37/02
CPC分类号： H01J37/3171 , H01J37/1472 , H01J37/244 , H01J37/304 , H01J2237/24507 , H01J2237/30455 , H01J2237/30483 , H01J2237/31703
摘要： A method and apparatus is provided for improving implant uniformity of an ion beam experiencing pressure increase along the beam line. The method comprises generating a main scan waveform that moves an ion beam at a substantially constant velocity across a workpiece. A compensation waveform (e.g., quadratic waveform), having a fixed height and waveform, is also generated and mixed with the main scan waveform (e.g., through a variable mixer) to form a beam scanning waveform. The mixture ratio may be adjusted by an instantaneous vacuum pressure signal, which can be performed at much higher speed and ease than continuously modifying scan waveform. The mixture provides a beam scanning waveform comprising a non-constant slope that changes an ion beam's velocity as it moves across a workpiece. Therefore, the resultant beam scanning waveform, with a non-constant slope, is able to account for pressure non-uniformities in dose along the fast scan direction.
摘要翻译：提供了一种方法和装置，用于改善经历沿着束线的压力增加的离子束的植入物均匀性。该方法包括产生主扫描波形，该主扫描波形以跨过工件的基本上恒定的速度移动离子束。还产生具有固定高度和波形的补偿波形（例如，二次波形），并与主扫描波形（例如，通过可变混频器）混合以形成波束扫描波形。可以通过瞬时真空压力信号来调节混合比，其可以以比连续修改扫描波形更高的速度和容易性执行。该混合物提供包括非恒定斜率的波束扫描波形，当斜波在工件上移动时改变离子束的速度。因此，具有非恒定斜率的合成光束扫描波形能够解释沿着快速扫描方向的剂量中的压力不均匀性。

25. 发明申请

US20110215262A1 Method for Improving Implant Uniformity During Photoresist Outgassing 有权
标题翻译：改善光刻胶除气过程中种植体均匀性的方法
公开(公告)号：US20110215262A1
公开(公告)日：2011-09-08
申请号：US12717536
申请日：2010-03-04
申请人： Shu Satoh
发明人： Shu Satoh
IPC分类号： H01J37/302 , H01J37/02
CPC分类号： H01J37/3171 , H01J37/1472 , H01J37/244 , H01J37/304 , H01J2237/24507 , H01J2237/30455 , H01J2237/30483 , H01J2237/31703
摘要： A method and apparatus is provided for improving implant uniformity of an ion beam experiencing pressure increase along the beam line. The method comprises generating a main scan waveform that moves an ion beam at a substantially constant velocity across a workpiece. A compensation waveform (e.g., quadratic waveform), having a fixed height and waveform, is also generated and mixed with the main scan waveform (e.g., through a variable mixer) to form a beam scanning waveform. The mixture ratio may be adjusted by an instantaneous vacuum pressure signal, which can be performed at much higher speed and ease than continuously modifying scan waveform. The mixture provides a beam scanning waveform comprising a non-constant slope that changes an ion beam's velocity as it moves across a workpiece. Therefore, the resultant beam scanning waveform, with a non-constant slope, is able to account for pressure non-uniformities in dose along the fast scan direction.
摘要翻译：提供了一种方法和装置，用于改善经历沿着束线的压力增加的离子束的植入物均匀性。该方法包括产生主扫描波形，该主扫描波形以跨过工件的基本上恒定的速度移动离子束。还产生具有固定高度和波形的补偿波形（例如，二次波形），并与主扫描波形（例如，通过可变混频器）混合以形成波束扫描波形。可以通过瞬时真空压力信号来调节混合比，其可以以比连续修改扫描波形更高的速度和容易性执行。该混合物提供包括非恒定斜率的波束扫描波形，当斜波在工件上移动时改变离子束的速度。因此，具有非恒定斜率的合成光束扫描波形能够解释沿着快速扫描方向的剂量中的压力不均匀性。

26. 发明申请

US20080078956A1 Broad beam ion implantation architecture 有权
标题翻译：宽束离子注入架构
公开(公告)号：US20080078956A1
公开(公告)日：2008-04-03
申请号：US11540897
申请日：2006-09-29
申请人： Shu Satoh
发明人： Shu Satoh
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/14 , H01J2237/049 , H01J2237/055 , H01J2237/057
摘要： An ion implantation system for providing a mass analyzed ribbon beam that comprises an ion beam source that includes a plasma source and an extraction component, wherein the extraction component is configured to extract a diverging ion beam and direct the ion beam to a window frame magnet assembly. The window frame magnet assembly comprises two pairs of coils orthogonally arranged within a window shaped yoke to produce an independently controllable uniform cross-field magnetic field. The first set of coils create an uniform field across the width of the diverging beam to convert it to a uniform parallel broad ion beam. The second set of coils bend the sheet of the ion beam in orthogonal direction to give mass dispersion for ion mass selection.
摘要翻译：一种用于提供质量分析的带状束的离子注入系统，其包括包括等离子体源和提取部件的离子束源，其中所述提取部件被配置为提取发散的离子束并将所述离子束引导到窗框磁体组件。窗框磁体组件包括正交布置在窗形磁轭内的两对线圈，以产生可独立控制的均匀的交叉磁场。第一组线圈在发散光束的宽度上形成均匀的场，以将其转换成均匀的平行宽离子束。第二组线圈在垂直方向上弯曲离子束的片材，以提供用于离子质量选择的质量分散。

27. 发明授权

US06207959B1 Ion implanter 有权
标题翻译：离子注入机
公开(公告)号：US06207959B1
公开(公告)日：2001-03-27
申请号：US09294995
申请日：1999-04-20
申请人： Shu Satoh , Theodore H. Smick
发明人： Shu Satoh , Theodore H. Smick
IPC分类号： H01J3700
CPC分类号： H01J37/3171 , H01J2237/20228
摘要： An ion implanter for sequentially processing single semiconductor wafers includes a scanning arm extending along a first axis. A wafer holder is mounted on a free end of the arm so as to be rotatable about a second axis centered on and perpendicular to the plane of the wafer. The wafer can be scanned through an ion beam by reciprocating the arm transversely of the first axis. A rotary motor is mounted in the scanning arm near the free end with its axis of rotation parallel to the first axis and perpendicular to the second axis. A right angle rotary drive connects the motor to the wafer holder. A hard stop is provided on the motor to prevent the wafer from being rotated by more than 360°. Connections to the wafer on the holder are provided by a flexible circuit coiled about the second axis. The scanning mechanism can itself be rotated about an axis parallel to the arm so as to tilt the scanning direction, the wafer holder is itself further rotatable about the arm axis relative to the scanning mechanism. This enables the wafer to be rotated to the horizontal when the mechanical scanning mechanism holds the arm with the wafer above the beam.
摘要翻译：用于顺序处理单个半导体晶片的离子注入机包括沿着第一轴延伸的扫描臂。晶片保持器安装在臂的自由端上，以便围绕中心于晶片平面的第二轴可旋转。可以通过横跨第一轴线的臂往复移动离子束来扫描晶片。旋转马达安装在自由端附近的扫描臂中，其旋转轴线平行于第一轴线并垂直于第二轴线。直角旋转驱动器将电机连接到晶片架。在电机上设置了一个硬停止，以防止晶片旋转超过360°。通过围绕第二轴线卷绕的柔性电路提供与支架上的晶片的连接。扫描机构本身可以围绕平行于臂的轴线旋转以便使扫描方向倾斜，晶片保持器本身可相对于扫描机构围绕臂轴线进一步旋转。这使得当机械扫描机构将晶片保持在晶片上方时，晶片能够旋转到水平线。

28. 发明授权

US08227773B2 Versatile beam glitch detection system 有权
标题翻译：多功能射束毛刺检测系统
公开(公告)号：US08227773B2
公开(公告)日：2012-07-24
申请号：US12846313
申请日：2010-07-29
申请人： Shu Satoh
发明人： Shu Satoh
IPC分类号： H01J37/317 , H01J37/256 , G21K5/10
CPC分类号： H01J37/3045 , H01J37/3171 , H01J2237/24535 , H01J2237/30455 , H01J2237/31703
摘要： A glitch duration threshold is determined based on an allowable dose uniformity, a number of passes of a workpiece through an ion beam, a translation velocity, and a beam size. A beam dropout checking routine repeatedly measures beam current during implantation. A beam dropout counter is reset each time beam current is sufficient. On a first observation of beam dropout, a counter is incremented and a position of the workpiece is recorded. On each succeeding measurement, the counter is incremented if beam dropout continues, or reset if beam is sufficient. Thus, the counter indicates a length of each dropout in a unit associated with the measurement interval. The implant routine stops only when the counter exceeds the glitch duration threshold and a repair routine is performed, comprising recalculating the glitch duration threshold based on one fewer translations of the workpiece through the beam, and performing the implant routine starting at the stored position.
摘要翻译：基于允许的剂量均匀性，通过离子束的工件的通过次数，平移速度和光束尺寸来确定毛刺持续时间阈值。光束离子检测程序在植入期间重复测量束电流。每次射束电流足够时，光束压差计数器都被复位。在第一次观察光束偏移时，计数器递增，并记录工件的位置。在每次后续的测量中，如果光束失效继续，计数器就会增加，如果光束足够，则重置。因此，计数器指示与测量间隔相关联的单元中的每个压差的长度。只有当计数器超过毛刺持续时间阈值并且执行修复例程时，植入程序才停止，包括基于通过束的工件的一个较少的平移重新计算毛刺持续时间阈值，以及从存储位置开始执行注入程序。

29. 发明授权

US08071964B2 System and method of performing uniform dose implantation under adverse conditions 有权
标题翻译：在不利条件下进行均匀剂量注入的系统和方法
公开(公告)号：US08071964B2
公开(公告)日：2011-12-06
申请号：US12431081
申请日：2009-04-28
申请人： Shu Satoh
发明人： Shu Satoh
IPC分类号： H01J37/317 , H01J37/256
CPC分类号： H01J37/244 , H01J37/304 , H01J37/3171 , H01J2237/24405 , H01J2237/24507 , H01J2237/24564 , H01J2237/30405 , H01J2237/30455 , H01J2237/31703
摘要： An ion implantation system and associated method includes a scanner configured to scan a pencil shaped ion beam into a ribbon shaped ion beam, and a beam bending element configured to receive the ribbon shaped ion beam having a first direction, and bend the ribbon shaped ion beam to travel in a second direction. The system further includes an end station positioned downstream of the beam bending element, wherein the end station is configured to receive the ribbon shaped ion beam traveling in the second direction, and secure a workpiece for implantation thereof. In addition, the system includes a beam current measurement system located at an exit opening of the beam bending element that is configured to measure a beam current of the ribbon shaped ion beam at the exit opening of the beam bending element.
摘要翻译：离子注入系统和相关方法包括扫描器，其被配置为将铅笔形离子束扫描成带状离子束，以及梁弯曲元件，其构造成接收具有第一方向的带状离子束，并且弯曲带状离子束沿第二个方向行驶。所述系统还包括位于所述梁弯曲元件下游的终端站，其中所述端站被构造成接收沿所述第二方向传播的所述带状离子束，并且固定用于其注入的工件。此外，该系统包括位于梁弯曲元件的出口处的束电流测量系统，其被配置为测量在束弯曲元件的出口处的带状离子束的束电流。

30. 发明授权

US08035080B2 Method and system for increasing beam current above a maximum energy for a charge state 有权
标题翻译：用于在充电状态下将束电流增加到最大能量以上的方法和系统
公开(公告)号：US08035080B2
公开(公告)日：2011-10-11
申请号：US12609912
申请日：2009-10-30
申请人： Shu Satoh
发明人： Shu Satoh
IPC分类号： H01J37/08 , B01D59/44
CPC分类号： H01J37/3171 , H01J37/08 , H01J2237/0048 , H01J2237/0815
摘要： Methods and a system of an ion implantation system are disclosed that are capable of increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Positive ions having a first positive charge state are selected into an accelerator. The positive ions of the first positive charge state are accelerated in acceleration stages and stripped to convert them to positive ions of a second charge state. A second kinetic energy level higher than the maximum kinetic energy level of the first charge state can be obtained.
摘要翻译：公开了一种离子注入系统的方法和系统，其能够在不改变离子源处的电荷状态的情况下从离子源增加高于第一电荷状态的最大动能的束电流。选择具有第一正电荷状态的正离子进入加速器。第一正电荷状态的正离子在加速阶段加速并剥离，以将其转换成第二电荷状态的正离子。可以获得高于第一充电状态的最大动能水平的第二动能水平。

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