专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明专利

JP2005311365A Control of characteristics and uniformity of silicon nitride film by controlling film forming precursor 有权
标题翻译：通过控制成膜前体控制硅酸钠膜的特性和均匀性
公开(公告)号：JP2005311365A
公开(公告)日：2005-11-04
申请号：JP2005118725
申请日：2005-04-15
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： CHOI SOO YOUNG , WON TAE KYUNG , GAKU FURUTA , WANG QUNHUA , JOHN M WHITE , PARK BEOM SOO
IPC分类号： C23C16/34 , H01L21/318 , H01L21/336 , H01L21/469 , H01L29/49 , H01L29/786
CPC分类号： H01L29/66765 , C23C16/345 , H01L21/3185 , H01L29/4908 , H01L29/78669
摘要： PROBLEM TO BE SOLVED: To provide a method for controlling the characteristics and uniformity of a silicon nitride film deposited by CVD on a larger surface area, and to provide a film formed by the method.
SOLUTION: A method for depositing by PECVD an a-SiN
x : H film useful as a gate dielectric and a passivation layer in a TFT device, when a series of TFT devices are arranged on a substrate having a surface area of about 1 m
2 or more, or in some case, of a range of about 4.1 m
2 , or of 9 m
2 or more, has been developed. The a-SiN
x : H film gives the uniformity of film thickness required across such a large surface area of the substrate and the uniformity of the film characteristics including the chemical composition. A film formed by this method is useful for the control of both a liquid crystal active matrix display and an organic light emitting diode.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于通过CVD沉积的氮化硅膜在更大表面积上控制特性和均匀性的方法，并提供通过该方法形成的膜。解决方案：一种通过PECVD沉积用作TFT器件中的栅极电介质和钝化层的a-SiN薄膜，当一系列TFT器件布置在表面积大约为1微米或更大，或在某些情况下为约4.1微米/秒，或9微米2 / / SP>以上。 a-SiN＆lt; SB＆gt;：H膜使得在衬底的这种大的表面积上所需的膜厚度均匀性以及包括化学成分在内的膜特性的均匀性。通过该方法形成的膜对于液晶有源矩阵显示器和有机发光二极管的控制是有用的。版权所有（C）2006，JPO＆NCIPI

22. 发明专利

JP2005051200A Anodized substrate support 审中-公开
标题翻译：阳极基板支撑
公开(公告)号：JP2005051200A
公开(公告)日：2005-02-24
申请号：JP2004140365
申请日：2004-05-10
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： CHOI SOO YOUNG , PARK BEOM SOO , SHANG QUANYUAN , GREENE ROBERT I , JOHN M WHITE , YIM DONG-KIL , PARK CHUNG-HEE , LAW KAM
IPC分类号： B24C1/00 , C23C16/458 , C25D11/04 , C25D11/16 , C25D11/18 , H01J37/32 , H01L21/205 , H01L21/68 , H01L21/683
CPC分类号： H01J37/32082 , C23C16/4581 , C25D11/04 , C25D11/16 , C25D11/18
摘要： PROBLEM TO BE SOLVED: To provide a substrate support which reduces defects and enhances the uniformity of a thin film deposited on a substrate and a method for fabricating the same. SOLUTION: The substrate support 200 includes electrically conductive body 202 having a substrate support surface 204 that is covered by an electrically insulative coating film 210. At least a portion of the coating film 210 centered on the substrate support surface 204 has a surface finish of between about 80 to about 200 micro-inches. In another embodiment, the substrate support 200 includes an anodized aluminum body 202 having a surface-finish 216 of between about 80 to about 200 micro-inches on a portion of the body 202 adapted to support a substrate 140 thereon. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供减少缺陷并提高沉积在基板上的薄膜的均匀性的基板支撑件及其制造方法。解决方案：衬底支撑件200包括具有被电绝缘涂膜210覆盖的衬底支撑表面204的导电体202.以衬底支撑表面204为中心的涂膜210的至少一部分具有表面约80至约200微英寸之间。在另一个实施例中，衬底支撑件200包括阳极化铝体202，阳极氧化铝体202具有在本体202的适于支撑衬底140的部分上的约80至约200微英寸的表面光洁度216。版权所有（C）2005，JPO＆NCIPI

23. 发明专利

JP2009280913A High-frequency grounding of cathode of process chamber 有权
标题翻译：过程室阴极的高频接地
公开(公告)号：JP2009280913A
公开(公告)日：2009-12-03
申请号：JP2009112186
申请日：2009-05-01
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： JOHN M WHITE , TINER ROBIN L , PARK BEOM SOO , BLONIGAN WENDELL T
IPC分类号： C23C16/509 , C23C16/458 , H01L21/205 , H01L21/304 , H01L21/3065 , H01L21/31 , H05H1/46
CPC分类号： H01J37/32082 , H01J37/32174
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for giving a short current return pass to a high-frequency electric current between a process chamber wall and a substrate support. SOLUTION: A high-frequency grounding apparatus 280, which is high-frequency grounded and placed on the upper part of a substrate transfer port, establishes electrical contact with a substrate support 224, only during a substrate processing such as deposition, to give an electric current return pass to the high-frequency electric current. In an embodiment of the high-frequency grounding apparatus 280, the substrate support 224 upwardly moves during a processing and is brought into contact with a coated pickup block 282 provided with at least one low-impedance flexible curtain and fixed on the grounded chamber wall 206. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于给处理室壁和衬底支撑件之间的高频电流提供短电流返回通道的装置。解决方案：高频接地并放置在基板传送端口的上部的高频接地装置280仅在诸如沉积的基板处理期间与基板支撑件224电接触，给予高频电流的电流回流。在高频接地装置280的一个实施例中，衬底支撑件224在处理期间向上移动，并且与设置有至少一个低阻抗柔性帘布并固定在接地室壁206上的涂覆拾取块282接触。版权所有（C）2010，JPO＆INPIT

24. 发明专利

JP2009239300A Anodized substrate support 审中-公开
标题翻译：阳极基板支撑
公开(公告)号：JP2009239300A
公开(公告)日：2009-10-15
申请号：JP2009149983
申请日：2009-06-24
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： CHOI SOO YOUNG , PARK BEOM SOO , SHANG QUANYUAN , GREENE ROBERT I , JOHN M WHITE , YIM DONG-KIL , PARK CHUNG-HEE , LAW KAM
IPC分类号： B24C1/00 , H01L21/683 , C23C16/458 , C25D11/04 , C25D11/16 , C25D11/18 , H01J37/32 , H01L21/205 , H01L21/68
CPC分类号： H01J37/32082 , C23C16/4581 , C25D11/04 , C25D11/16 , C25D11/18
摘要： PROBLEM TO BE SOLVED: To provide a substrate support, and to provide a method for manufacturing the same. SOLUTION: The substrate support includes a conductor having a substrate support surface that is covered with an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish between about 80 to about 200 micro-inches. Alternatively, the substrate support includes a plated aluminum body, and the aluminum body has a surface finish treatment part between about 80 to about 200 micro-inches on a portion of the body adapted to support a substrate on its upper part. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供基板支撑件，并提供其制造方法。解决方案：衬底支撑件包括具有被电绝缘涂层覆盖的衬底支撑表面的导体。以基板支撑表面为中心的涂层的至少一部分具有在约80至约200微英寸之间的表面光洁度。或者，衬底支撑件包括电镀铝体，并且铝体具有约80至约200微英寸之间的表面光洁度处理部分，其适于在其上部支撑衬底的本体部分上。版权所有（C）2010，JPO＆INPIT

25. 发明专利

JP2007051367A Reducing electrostatic charge by roughening susceptor 有权
标题翻译：通过粗糙度降低静电电荷
公开(公告)号：JP2007051367A
公开(公告)日：2007-03-01
申请号：JP2006194506
申请日：2006-07-14
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： CHOI SOO YOUNG , PARK BEOM SOO , SHANG QUANYUAN , JOHN M WHITE , YIM DONG-KIL , PARK CHUNG-HEE
IPC分类号： C23C16/458 , H01L21/205 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a substrate support which can reduce a triboelectric charge between a large area substrate and the substrate support.
SOLUTION: In one embodiment of the invention, a substrate support includes an electrically conductive body 202 having a substrate support surface that is covered by an electrically insulative coating 210. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 200 to about 2000 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body 210 having a surface finish on the portion of the body 202 adapted to support a substrate thereon of between about 200 to about 2000 micro-inches. In one embodiment, a substrate support assembly 200 includes an electrically conductive body 202 having a substrate support surface, a substrate support structure that is adapted to support the conductive body and the conductive body is covered by an electrically insulative coating 210.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供可以减小大面积基板和基板支撑件之间的摩擦电荷的基板支撑件。解决方案：在本发明的一个实施例中，衬底支撑件包括具有由电绝缘涂层210覆盖的衬底支撑表面的导电体202.以衬底支撑表面为中心的涂层的至少一部分具有表面光洁度在约200至约2000微英寸之间。在另一个实施例中，衬底支撑件包括阳极氧化铝体210，其在主体202的部分上具有表面光洁度，其适于在其上支撑约200至约2000微英寸的衬底。在一个实施例中，衬底支撑组件200包括具有衬底支撑表面的导电体202，适于支撑导电体的衬底支撑结构，并且导电体被电绝缘涂层210覆盖。（C）2007，JPO＆INPIT

26. 发明专利

JP2006104575A Rf grounding of cathode in process chamber 有权
标题翻译：过程室中阴极射频接地
公开(公告)号：JP2006104575A
公开(公告)日：2006-04-20
申请号：JP2005274384
申请日：2005-09-21
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： JOHN M WHITE , TINER ROBIN L , PARK BEOM SOO , BLONIGAN WENDELL T
IPC分类号： C23C16/505 , H01L21/205 , H01L21/3065 , H05H1/46
CPC分类号： H01J37/32082 , H01J37/32174
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for providing a short return current path for RF current between a process chamber wall and a substrate support. SOLUTION: The RF grounding apparatus, which is RF grounded and is placed above a substrate transfer port, establishes electrical contact with the substrate support only during substrate processing, such as deposition, to provide return current path for the RF current. One embodiment of the RF grounding apparatus comprises one or more low impedance flexible curtains, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing. Yet another embodiment of the RF grounding apparatus comprises a plurality of low impedance flexible straps, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于在处理室壁和衬底支撑件之间提供用于RF电流的短路返回电流路径的装置。解决方案：RF接地并放置在衬底传输端口上方的RF接地设备仅在衬底处理（如沉积）时与衬底支撑件建立电接触，以提供RF电流的返回电流路径。 RF接地装置的一个实施例包括电连接到接地室壁的一个或多个低阻抗柔性窗帘，以及在衬底处理期间与衬底支撑件接触的一个或多个低阻抗块。 RF接地装置的另一个实施例包括多个低阻抗柔性带，其电连接到接地室壁，以及一个或多个低阻抗块，其在衬底处理期间与衬底支撑件接触。版权所有（C）2006，JPO＆NCIPI

27. 发明申请

WO2011041332A2 OFF-CENTER GROUND RETURN FOR RF-POWERED SHOWERHEAD 审中-公开
标题翻译： RF-POWERED SHOWERHEAD的离心接地回路
公开(公告)号：WO2011041332A2
公开(公告)日：2011-04-07
申请号：PCT/US2010050602
申请日：2010-09-28
申请人： APPLIED MATERIALS INC
发明人： BAEK JONGHOON , PARK BEOM SOO , KIM SAM HYUNGSAM
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32577 , Y10T29/49117
摘要： An electrical ground (36) of an RF impedance matching network (33) is connected to a connection area (50) on the grounded chamber cover (18) of a plasma chamber. The connection area is offset away from the center of the chamber cover toward a workpiece passageway (20). Alternatively, an RF power supply (30) has an electrically grounded output (32) that is connected to a connection area (52) on the chamber cover having such offset. Alternatively, an RF transmission line (37) has an electrically grounded conductor (39) that is connected between a grounded output of an RF power supply and a connection area (52) on the chamber cover having such offset.
摘要翻译： RF阻抗匹配网络（33）的电接地（36）连接到等离子体室的接地室盖（18）上的连接区域（50）。连接区域从腔室盖的中心偏移到工件通道（20）。或者，RF电源（30）具有电接地输出（32），其连接到具有偏移的腔室盖上的连接区域（52）。或者，RF传输线（37）具有电接地导体（39），其连接在RF电源的接地输出和具有偏移的腔室盖上的连接区域（52）之间。

28. 发明申请

WO2006014612A3 METHOD OF CONTROLLING THE FILM PROPERTIES OF A CVD-DEPOSITED SILICON NITRIDE FILM 审中-公开
标题翻译：控制CVD沉积氮化硅膜的电泳特性的方法
公开(公告)号：WO2006014612A3
公开(公告)日：2009-04-16
申请号：PCT/US2005025528
申请日：2005-07-18
申请人： APPLIED MATERIALS INC
发明人： PARK BEOM SOO , CHOI SOO YOUNG , WON TAE KYUNG , WHITE JOHN M
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/345 , C23C16/5096 , H01L21/3185 , H01L29/4908 , H01L29/66765
摘要： We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface off a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4 / NH3 / N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The a-SiNx:H films described herein are particularly useful as TFT gate dielectrics in the production of flat panel displays. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.
摘要翻译：我们已经发现，在包括SiH 4，NH 3和N 2的前体气体组合物中添加H 2有利于通过沉积在衬底上的a-SiN x：H膜改善湿蚀刻速率和衬底表面上的湿蚀刻速率均匀性 PECVD。湿蚀刻速率是膜密度的指示。通常，湿蚀刻速率越低，膜越致密。向SiH 4 / NH 3 / N 2前体气体组合物中加入H 2没有显着增加穿过基材表面的沉积膜厚度的变化。本文所述的a-SiNx：H膜在制造平板显示器时特别适用于TFT栅极电介质。跨过基板的膜的均匀性使得能够生产具有25,000cm 2和更大的表面积的平板显示器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式