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21. 发明专利

JP2014011294A Wavelength calibration method of spectroscopic polishing monitoring device, and polishing method of wafer 审中-公开
标题翻译：光谱抛光监测装置的波长校准方法及抛光方法
公开(公告)号：JP2014011294A
公开(公告)日：2014-01-20
申请号：JP2012146671
申请日：2012-06-29
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KOBAYASHI YOICHI
IPC分类号： H01L21/304 , B24B37/013
摘要： PROBLEM TO BE SOLVED: To provide a method for performing wavelength calibration of a spectroscopic polishing monitoring device easily, in a factory where a polishing device is installed.SOLUTION: In the wavelength calibration method of a spectroscopic polishing monitoring device, surface of a reference wafer having a film of uniform thickness formed thereon is irradiated with light, reflected light from the reference wafer is received, and a reference spectrum is generated by decomposing the reflected light thus received according to the wavelength. Subsequently, the surface of the reference wafer is irradiated with light, reflected light from the reference wafer is received, and a current spectrum is generated by decomposing the reflected light thus received according to the wavelength. A correction formula of wavelength for matching the current spectrum to the reference spectrum is generated.
摘要翻译：要解决的问题：提供一种用于在安装抛光装置的工厂中容易地进行分光抛光监测装置的波长校准的方法。解决方案：在分光抛光监测装置的波长校准方法中，参考晶片的表面在其上形成具有均匀厚度的膜的光被照射，接收来自参考晶片的反射光，并且通过根据波长分解如此接收的反射光来产生参考光谱。随后，用光照射参考晶片的表面，接收来自参考晶片的反射光，并且通过根据波长分解如此接收的反射光来产生电流光谱。产生用于将当前光谱与参考光谱匹配的波长校正公式。

22. 发明专利

JP2011000647A Method for monitoring polishing 审中-公开
标题翻译：监测抛光方法
公开(公告)号：JP2011000647A
公开(公告)日：2011-01-06
申请号：JP2009143052
申请日：2009-06-16
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KOBAYASHI YOICHI
IPC分类号： B24B49/04 , B24B37/013 , B24B49/12 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method for monitoring polishing, monitoring an exact progress of polishing by eliminating an influence caused by variations in a film thickness.SOLUTION: The method for monitoring polishing irradiates a surface of a substrate having a laminated structure with light during polishing of a substrate, receives reflected light returned from the substrate, decomposes the reflected light according to a wavelength to generate a spectral waveform, applies a numerical filter for selectively removing a predetermined optical interference component to the spectral waveform to generate a spectral waveform for monitoring, and monitors a change in the spectral waveform for monitoring during polishing.
摘要翻译：要解决的问题：提供一种用于监测抛光的方法，通过消除由膜厚度变化引起的影响来监测抛光的精确进展。解决方案：用于监测抛光的方法用光照射具有层叠结构的基板的表面在衬底的抛光期间，接收从衬底返回的反射光，根据波长分解反射光以产生光谱波形，应用数字滤波器，用于选择性地去除光谱波形中的预定光学干涉分量，以产生用于监测和监测光谱波形的变化，以便在抛光过程中进行监控。

23. 发明专利

JP2010253627A Polishing method and device, and method of monitoring substrate 有权
标题翻译：抛光方法和装置，以及监测基板的方法
公开(公告)号：JP2010253627A
公开(公告)日：2010-11-11
申请号：JP2009107656
申请日：2009-04-27
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KOBAYASHI YOICHI , HIROO YASUMASA
IPC分类号： B24B37/005 , B24B37/07 , B24B49/10 , H01L21/304
CPC分类号： B24B37/042 , B24B49/00
摘要： PROBLEM TO BE SOLVED: To provide polishing method and device capable of obtaining stable monitoring data of a surface to be polished during polishing of a polishing object, and a method of monitoring a substrate. SOLUTION: The substrate W mounted in a swinging and rotating top ring 20 is made to abut on a rotating polishing surface of a polishing table 18 mounted with a sensor 52 for monitoring, and the substrate W is polished, while monitoring a state of the substrate W during polishing by the monitoring sensor 52. When prescribed time has elapsed after starting the polishing, rotational speed of the polishing table 18 and a swinging condition of the top ring 20 are fixed so that each of a position of the monitoring sensor 52, a position of a rotation center of the top ring 20 and a direction of the swinging of the top ring 20 may approximately coincide with a previous value by prescribed time. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在抛光对象物的抛光期间获得待抛光表面的稳定监测数据的抛光方法和装置，以及监测基板的方法。解决方案：将安装在摆动旋转的顶环20中的基板W抵接在安装有用于监视的传感器52的抛光台18的旋转抛光表面上，并且在监视基板W的状态下对基板W进行抛光在通过监视传感器52进行研磨时，在经过了规定时间后，研磨台18的旋转速度和顶环20的摆动状态被固定，使得监视传感器如图52所示，顶环20的旋转中心的位置和顶环20的摆动方向可以与先前的值大致一致地达到规定的时间。版权所有（C）2011，JPO＆INPIT

24. 发明专利

JP2004154928A Polishing state monitoring device, polishing device and polishing method 有权
公开(公告)号：JP2004154928A
公开(公告)日：2004-06-03
申请号：JP2003321639
申请日：2003-09-12
申请人： Ebara Corp , Shimadzu Corp , 株式会社島津製作所 , 株式会社荏原製作所
发明人： KOBAYASHI YOICHI , NAKAI SHUNSUKE , TSUJI HITOSHI , TSUKUDA YASURO , ISHIMOTO MASUYOSHI , SHINYA KAZUYA
IPC分类号： B24B49/12 , B24B37/013 , B24B49/04 , H01L21/304 , B24B37/04
CPC分类号： B24B49/12 , B24B37/013
摘要： PROBLEM TO BE SOLVED: To provide a polishing state monitoring device capable of measuring a state of a film on a polishing surface of a polishing object in the middle of polishing precisely and at low cost. SOLUTION: This polishing state monitoring device is furnished with a light source 30, a luminous optical fiber 32 to irradiate the polished surface of a semiconductor wafer W with light from the light source 30, a light receiving optical fiber 34 receiving reflected light from the polished surface of the wafer W, a spectrograph to make spectral diffraction of received reflected light to a plurality of wavelength, a light receiving element to accumulate the light of a plurality of the wavelength made spectral diffraction, a spectral data forming part to form a spectral data of the reflected light by reading electric information accumulated in the light receiving element, a control part 40 to carry out sampling by the light receiving element at specified timing synchronized with rotation of a polishing table 12 and a computing part 48 to compute a specified characteristic value on the polishing surface of the wafer W in accordance with the spectral data formed by the spectral data forming part. COPYRIGHT: (C)2004,JPO

25. 发明专利

JP2013222856A Polishing device and polishing method 审中-公开
标题翻译：抛光装置和抛光方法
公开(公告)号：JP2013222856A
公开(公告)日：2013-10-28
申请号：JP2012094114
申请日：2012-04-17
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KOBAYASHI YOICHI , ONO KATSUTOSHI
IPC分类号： H01L21/304 , B24B37/013 , B24B37/07 , B24B37/10 , B24B49/10 , B24B49/12
CPC分类号： H01L21/302 , B24B37/013 , B24B37/205 , B24B49/105 , B24B49/12 , H01L22/12 , H01L22/26
摘要： PROBLEM TO BE SOLVED: To provide a polishing device capable of exactly acquiring a polishing state of a wafer on a polishing pad even when there is variation in film thickness in a circumferential direction of the wafer.SOLUTION: A sensor head 40 is installed in a polishing table 10, and rotates with the polishing table 10. A polishing device executes an idling process in which polishing of a wafer W on a polishing pad 12 does not substantially proceed while rotating the polishing table 10 and the wafer W, the sensor head 40 acquires film thickness data in the idling process, and a processing section 18 calculates a polishing index value showing progress of the polishing of a film from the film thickness data.
摘要翻译：要解决的问题：提供一种能够精确地获得抛光垫上的晶片的研磨状态的研磨装置，即使当晶片的圆周方向上的膜厚度发生变化时。传感器头40安装在抛光台10，并且与研磨台10一起旋转。抛光装置执行怠速处理，其中抛光台10和晶片W，传感头40的旋转基本上不会抛光抛光垫12上的晶片W 在空转处理中获取薄膜厚度数据，处理部18根据薄膜厚度数据计算显示薄膜研磨进展的研磨指标值。

26. 发明专利

JP2013219248A Polishing device and polishing method 审中-公开
标题翻译：抛光装置和抛光方法
公开(公告)号：JP2013219248A
公开(公告)日：2013-10-24
申请号：JP2012089585
申请日：2012-04-10
申请人： Ebara Corp , 株式会社荏原製作所
发明人： HIROO YASUMASA , KOBAYASHI YOICHI , ONO KATSUTOSHI
IPC分类号： H01L21/304 , B24B37/013 , B24B49/10 , B24B49/12
CPC分类号： B24B37/013 , B24B1/002 , B24B49/10 , B24B49/12 , B24B49/16
摘要： PROBLEM TO BE SOLVED: To provide a polishing device which can prevent excessive polishing to improve a detection accuracy of a polishing end point.SOLUTION: A polishing device comprises: a polishing table 10 for supporting an abrasive pad 12; a table motor 25 for rotating the polishing table 10; a top ring 15 for pressing a wafer W against the abrasive pad 12; an ammeter 35 for measuring a torque current value of the table motor 25; an optical sensor 40 for radiating light to the wafer W and measuring an intensity of reflected light from the wafer W; and a processing part 18 for creating from the intensity of the reflected light, a polishing index value which varies according to a film thickness. The processing part 18 determines a polishing end point based on a time point when the torque current value reaches a predetermined threshold value or a time point when a predetermined feature point of a polishing index value appears, whichever comes first.
摘要翻译：要解决的问题：提供一种可以防止过多抛光以提高抛光终点的检测精度的抛光装置。抛光装置包括：用于支撑研磨垫12的抛光台10; 用于旋转研磨台10的工作台马达25; 用于将晶片W压靠在研磨垫12上的顶环15; 用于测量台式电动机25的转矩电流值的电流计35; 用于向晶片W照射光并测量来自晶片W的反射光的强度的光学传感器40; 以及用于根据反射光的强度产生根据膜厚度而变化的抛光指数值的处理部分18。处理部18基于当转矩电流值达到预定阈值的时间点或抛光指标值的预定特征点出现的时间点（以先到者为准）来确定抛光终点。

27. 发明专利

JP2011243812A Substrate transfer method of substrate processing apparatus, scheduler, and operation control device of substrate processing apparatus 有权
标题翻译：基板处理装置的基板传送方法，调度器和基板处理装置的操作控制装置
公开(公告)号：JP2011243812A
公开(公告)日：2011-12-01
申请号：JP2010115740
申请日：2010-05-19
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KOIZUMI TATSUYA , KOBAYASHI YOICHI , OISHI KUNIO
IPC分类号： H01L21/02 , G05B19/418 , H01L21/677
CPC分类号： Y02P90/02
摘要： PROBLEM TO BE SOLVED: To provide a substrate transfer method of a substrate processing apparatus, a scheduler, and an operation control device of a substrate processing apparatus which perform a new substrate introduction schedule control by a linear programming schedule because the operation control in the maximum throughput is done as long as the normal operation continues from the apparatus operation starting point, and which can control by switching to a simulation method scheduler which can flexibly make such a substrate transfer schedule as substrate recovery while satisfying a process constraint condition when such events happen as production restarting after an accident occurs in a processing tank and the apparatus stops working, unit use/disuse dynamic switching, and process NG generation.SOLUTION: A substrate transfer method of a substrate processing apparatus, a scheduler, and an operation control device of a substrate processing apparatus comprises a linear programming scheduler 45, a simulation method scheduler 46, and a scheduler switching process 41, in order to perform substrate transfer scheduling by switching between linear programming and simulation method.
摘要翻译：解决的问题：提供一种基板处理装置的基板转印方法，基板处理装置的调度器和操作控制装置，其由于操作控制由线性规划表执行新的基板引入调度控制只要正常操作从设备操作起始点继续进行，并且可以通过切换到可以灵活地将这样的衬底传送调度作为衬底恢复的模拟方法调度器来控制，同时满足过程约束条件，则最大吞吐量完成这样的事件发生在在处理罐中发生事故并且设备停止工作，单元使用/废用动态切换和处理NG生成之后的生产重新启动时。解决方案：基板处理装置的基板转移方法，基板处理装置的调度器和操作控制装置按顺序包括线性编程调度器45，仿真方法调度器46和调度器切换处理41 通过在线性规划和模拟方法之间切换来执行基板传输调度。版权所有（C）2012，JPO＆INPIT

28. 发明专利

JP2011205070A Method of monitoring polishing, polishing method, polishing monitoring apparatus, and polishing apparatus 有权
标题翻译：抛光方法，抛光方法，抛光监视装置和抛光装置
公开(公告)号：JP2011205070A
公开(公告)日：2011-10-13
申请号：JP2011022650
申请日：2011-02-04
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KOBAYASHI YOICHI
IPC分类号： H01L21/304 , B24B37/013 , B24B49/12
CPC分类号： G01N21/9501 , B24B37/013 , B24B49/12 , G01B11/06 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method capable of accurately monitoring a progress of polishing and detecting an exact end point of polishing.SOLUTION: In this method, light is cast on a substrate during polishing of the substrate, and reflection light from the substrate is received and the intensity of the reflection light is measured for each wavelength. Then, a spectrum indicating the relation between the intensity and the wavelength is generated from the measured intensities of the reflection light. An amount of change in spectrum per predetermined period of time is calculated. Amounts of change in spectrum are accumulated over the polishing time to calculate an accumulated amount of change in spectrum. Based on the accumulated amount of change in spectrum, a progress of substrate polishing is monitored.
摘要翻译：要解决的问题：提供一种能够精确地监测抛光进度并检测精确的抛光终点的方法。解决方案：在该方法中，在抛光基板期间将光投射在基板上，并且从基板反射光并且对于每个波长测量反射光的强度。然后，从所测量的反射光的强度产生表示强度与波长的关系的光谱。计算每预定时间段的频谱变化量。在抛光时间内积累了光谱变化量，以计算出累积的光谱变化量。基于累积的光谱变化量，对衬底研磨进行监测。

29. 发明专利

JP2010093147A Polishing progress monitoring method, and polishing device 审中-公开
标题翻译：抛光进度监测方法和抛光装置
公开(公告)号：JP2010093147A
公开(公告)日：2010-04-22
申请号：JP2008263375
申请日：2008-10-10
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KOBAYASHI YOICHI
IPC分类号： H01L21/304 , B24B37/013 , B24B49/12
摘要： PROBLEM TO BE SOLVED: To provide a polishing progress monitoring method that can monitor progress of polishing even when an amount (thickness) of a film to be removed is small, and is not influenced by unevenness of a base layer of the film, and to provide a polishing device. SOLUTION: The invention relates to the method of monitoring the progress of polishing of a substrate W having the film. The method includes: polishing the surface of the substrate W with a polishing pad 22; irradiating the surface of the substrate W with light during the polishing; receiving reflected light returning from the substrate W; measuring reflection intensities by wavelengths of the reflected light; acquiring a plurality of characteristic values from reflection intensities at different wavelengths; monitoring the plurality of characteristic values during the polishing; and detecting maximum points or minimum points of temporal variations of the plurality of characteristic values. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种即使在要去除的膜的量（厚度）小的情况下也可以监测抛光进度的抛光进行监测方法，并且不受膜的基底层的不均匀性的影响，并提供抛光装置。解决方案：本发明涉及监测具有该膜的基板W的抛光进度的方法。该方法包括：用抛光垫22抛光衬底W的表面; 在抛光期间用光照射基板W的表面; 接收从基板W返回的反射光; 通过反射光的波长测量反射强度; 从不同波长的反射强度获取多个特征值; 在抛光期间监测多个特征值; 以及检测所述多个特征值的时间变化的最大点或最小点。版权所有（C）2010，JPO＆INPIT

30. 发明申请

WO2004103636A2 SUBSTRATE POLISHING APPARATUS 审中-公开
标题翻译：基板抛光装置
公开(公告)号：WO2004103636A2
公开(公告)日：2004-12-02
申请号：PCT/JP2004007152
申请日：2004-05-19
申请人： EBARA CORP , SHIMADZU CORP , HIROKAWA KAZUTO , KOBAYASHI YOICHI , NAKAI SHUNSUKE , OHTA SHINROU , TSUKUDA YASUO
发明人： HIROKAWA KAZUTO , KOBAYASHI YOICHI , NAKAI SHUNSUKE , OHTA SHINROU , TSUKUDA YASUO
IPC分类号： B24B49/12 , B24D7/12 , H01L21/306 , B24B
CPC分类号： B24B37/12 , B24B37/013 , B24B49/12 , H01L21/30625
摘要： A substrate polishing apparatus (10) polishes a substrate (20) to a flat mirror finish. The substrate polishing apparatus (10) has a polishing table (12) against which a substrate (20) is pressed, a light-emitting and light-receiving device (24) to emit measurement light from the polishing table (12) to the substrate (20) and to receive reflected light from the substrate (20) for measuring a film on the substrate (20), a fluid supply passage (42) for supplying a measurement fluid, through which the measurement light and the reflected light pass, to a fluid chamber (68) provided at a light-emitting and light-receiving position of the polishing table (12), and a fluid supply control device (56, 58) for controlling supply of the measurement fluid to the fluid chamber (68).
摘要翻译：基板研磨装置（10）将基板（20）抛光成平面镜面。基板研磨装置（10）具有：被加压基板（20）的研磨台（12），从研磨台（12）向基板发射测定光的发光和受光装置（24）（20）接收来自基板（20）的反射光，用于测量基板（20）上的薄膜;流体供给通道（42），用于将测量光和反射光通过的测量流体通过，设置在所述研磨台（12）的发光和受光位置处的流体室（68）和用于控制向所述流体室（68）供给所述测量流体的流体供应控制装置（56,58）。

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