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21. 发明授权

US08838625B2 Automated screen scraping via grammar induction 有权
标题翻译：通过语法感应自动屏幕刮除
公开(公告)号：US08838625B2
公开(公告)日：2014-09-16
申请号：US12417773
申请日：2009-04-03
申请人： Zhichen Xu , Yun Fu , Peter Yen , Ning Song
发明人： Zhichen Xu , Yun Fu , Peter Yen , Ning Song
IPC分类号： G06F17/30 , G06F17/24 , G06F17/27
CPC分类号： G06F17/248 , G06F17/2715
摘要： A method and a computer-readable medium are provided which perform screen scraping via grammar induction. The computer-readable medium stores instructions of the method, the instructions directing a computer processor to intercept display information transmitted to a computer-implemented display device representing information stored in a data source; induce a grammar via statistical analysis of the intercepted display information; provide the grammar to a parser-generator to generate a parser corresponding to the induced grammar; and perform screen scraping using the generated parser.
摘要翻译：提供了一种通过语法感应来执行屏幕刮擦的方法和计算机可读介质。所述计算机可读介质存储所述方法的指令，所述指令指示计算机处理器拦截发送到计算机实现的显示设备的显示信息，所述显示信息表示存储在数据源中的信息; 通过对截取的显示信息的统计分析来引发语法; 为解析器生成器提供语法以产生对应于引导语法的解析器; 并使用生成的解析器执行屏幕抓取。

22. 发明申请

US20130338031A1 Biomarkers for Pre-Diabetes, Cardiovascular Diseases, and Other Metabolic-Syndrome Related Disorders and Methods Using the Same 有权
公开(公告)号：US20130338031A1
公开(公告)日：2013-12-19
申请号：US13966475
申请日：2013-08-14
申请人： Yun Fu Hu , Costel Chirila , Danny Alexander , Michael Milburn , Matthew W. Mitchell , Walter Gall , Kay A. Lawton
发明人： Yun Fu Hu , Costel Chirila , Danny Alexander , Michael Milburn , Matthew W. Mitchell , Walter Gall , Kay A. Lawton
IPC分类号： G01N33/483 , G01N33/50
CPC分类号： G01N33/5308 , G01N33/483 , G01N33/487 , G01N33/5091 , G01N33/6893 , G01N2800/04 , G01N2800/042 , G01N2800/044 , G01N2800/32 , G01N2800/50 , G01N2800/52 , G01N2800/56
摘要： Biomarkers relating to insulin resistance, pre-diabetes, type-2 diabetes, metabolic syndrome, atherosclerosis, and cardiomyopathy are provided, as well as methods for using such biomarkers as biomarkers for insulin resistance, pre-diabetes, type-2 diabetes, metabolic syndrome, atherosclerosis, and cardiomyopathy. In addition, methods for modulating the respective disorders or conditions of a subject are also provided. Also provided are suites of small molecule entities as biomarkers for insulin resistance, pre-diabetes, type-2 diabetes, metabolic syndrome, atherosclerosis, and cardiomyopathy.

23. 发明授权

US08390890B2 Halftone image generation method and image processing system and computer program product thereof 失效
标题翻译：半色调图像生成方法及图像处理系统及其计算机程序产品
公开(公告)号：US08390890B2
公开(公告)日：2013-03-05
申请号：US12899245
申请日：2010-10-06
申请人： Jing-Ming Guo , Yun-Fu Liu
发明人： Jing-Ming Guo , Yun-Fu Liu
IPC分类号： H04N1/405 , G06K9/00
CPC分类号： H04N1/4052
摘要： A halftone image generation method used in a system including an image input module and a halftoning processing module for generating a halftone image is disclosed. First, an original image is received by the image input module and a dot diffusion process is performed to the original image to generate the halftone image using a first class matrix with a first size and a corresponding first diffused weighting matrix with a first diffused area size, wherein the first class matrix indicates a processing order of the dot diffusion process and the first class matrix with the first size, the first diffused area size and the corresponding first diffused weighting matrix with the first diffused area size are optimized results determined in advance by the halftoning processing module according to class matrixes of different sizes and diffused areas of different sizes.
摘要翻译：公开了一种在包括用于产生半色调图像的图像输入模块和半色调处理模块的系统中使用的半色调图像生成方法。首先，由图像输入模块接收原始图像，并且对原始图像执行点扩散处理，以使用具有第一尺寸的第一等级矩阵和具有第一扩散区域尺寸的相应的第一扩散加权矩阵来生成半色调图像其中，所述第一类矩阵表示所述点扩散处理的处理顺序，具有第一大小的第一等级矩阵，第一扩散区域大小和具有第一扩散区域大小的对应的第一扩散加权矩阵是由根据不同大小的类矩阵和不同大小的扩散区域的半色调处理模块。

24. 发明授权

US08110890B2 Method of fabricating semiconductor device isolation structure 有权
标题翻译：制造半导体器件隔离结构的方法
公开(公告)号：US08110890B2
公开(公告)日：2012-02-07
申请号：US11758043
申请日：2007-06-05
申请人： Chen-Hua Yu , Chen-Nan Yeh , Chu-Yun Fu , Ding-Yuan Chen
发明人： Chen-Hua Yu , Chen-Nan Yeh , Chu-Yun Fu , Ding-Yuan Chen
IPC分类号： H01L21/70
CPC分类号： H01L21/76202 , H01L21/26506 , H01L21/26533 , H01L21/26586 , H01L21/266 , H01L21/324 , H01L21/762 , H01L21/823481 , H01L29/0649 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device including reentrant isolation structures and a method for making such a device. A preferred embodiment comprises a substrate of semiconductor material forming at least one isolation structure having a reentrant profile and isolating one or more adjacent operational components. The reentrant profile of the at least one isolation structure is formed of substrate material and is created by ion implantation, preferably using oxygen ions applied at a number of different angles and energy levels. In another embodiment the present invention is a method of forming an isolation structure for a semiconductor device performing at least one oxygen ion implantation.
摘要翻译：包括可折入隔离结构的半导体器件和用于制造这种器件的方法。优选实施例包括形成至少一个隔离结构的半导体材料的衬底，该隔离结构具有折返轮廓并且隔离一个或多个相邻的操作部件。至少一个隔离结构的折返轮廓由衬底材料形成，并且通过离子注入产生，优选地使用以多个不同角度和能级施加的氧离子。在另一个实施方案中，本发明是形成用于进行至少一个氧离子注入的半导体器件的隔离结构的方法。

25. 发明申请

US20110142340A1 HALFTONE IMAGE GENERATION METHOD AND IMAGE PROCESSING SYSTEM AND COMPUTER PROGRAM PRODUCT THEREOF 失效
标题翻译： HALFTONE图像生成方法和图像处理系统及其计算机程序产品
公开(公告)号：US20110142340A1
公开(公告)日：2011-06-16
申请号：US12899245
申请日：2010-10-06
申请人： Jing-Ming GUO , Yun-Fu LIU
发明人： Jing-Ming GUO , Yun-Fu LIU
IPC分类号： G06K9/00
CPC分类号： H04N1/4052
摘要： A halftone image generation method used in a system including an image input module and a halftoning processing module for generating a halftone image is disclosed. First, an original image is received by the image input module and a dot diffusion process is performed to the original image to generate the halftone image using a first class matrix with a first size and a corresponding first diffused weighting matrix with a first diffused area size, wherein the first class matrix indicates a processing order of the dot diffusion process and the first class matrix with the first size, the first diffused area size and the corresponding first diffused weighting matrix with the first diffused area size are optimized results determined in advance by the halftoning processing module according to class matrixes of different sizes and diffused areas of different sizes.
摘要翻译：公开了一种在包括用于产生半色调图像的图像输入模块和半色调处理模块的系统中使用的半色调图像生成方法。首先，由图像输入模块接收原始图像，并且对原始图像执行点扩散处理，以使用具有第一尺寸的第一等级矩阵和具有第一扩散区域尺寸的相应的第一扩散加权矩阵来生成半色调图像其中，所述第一类矩阵表示所述点扩散处理的处理顺序，具有第一大小的第一等级矩阵，第一扩散区域大小和具有第一扩散区域大小的对应的第一扩散加权矩阵是由根据不同大小的类矩阵和不同大小的扩散区域的半色调处理模块。

26. 发明申请

US20110108819A1 COMPOUNDS HAVING ELECTRON TRANSPORT PROPERTIES, THEIR PREPARATION AND USE 有权
标题翻译：具有电子传输特性的化合物及其制备和使用
公开(公告)号：US20110108819A1
公开(公告)日：2011-05-12
申请号：US13001292
申请日：2009-08-06
申请人： Poopathy Kathirgamanathan , Sivagnanasundram Surendrakumar , Yun Fu Chan
发明人： Poopathy Kathirgamanathan , Sivagnanasundram Surendrakumar , Yun Fu Chan
IPC分类号： H01L51/54 , C07F3/00 , C07F5/00 , C07F3/02 , C07F7/00 , C07F1/08 , C07F9/00 , C07F5/06 , C07F5/02
CPC分类号： C07D263/57 , C07D277/64 , C07F1/005 , C07F5/003 , C07F5/02 , C07F7/025 , C07F9/005 , H01L51/008 , H01L51/0089 , H01L51/0091 , H01L51/5072
摘要： The invention provides new compounds of the formula I, II or III. These compounds can be used as electron transport materials in optical light emitting diodes (OLEDs). The compounds of the formula I, II and III are as follows:
摘要翻译：本发明提供式I，II或III的新化合物。这些化合物可以用作光发射二极管（OLED）中的电子传输材料。式I，II和III的化合物如下：

27. 发明申请

US20100327264A1 ELECTROLUMINESCENT DEVICE USING AZOMETHINE-LITHIUM-COMPLEX AS ELECTRON INJECTION LAYER 审中-公开
标题翻译：电子注入层使用铝 - 锂 - 复合物的电致发光器件
公开(公告)号：US20100327264A1
公开(公告)日：2010-12-30
申请号：US12521334
申请日：2007-12-19
申请人： Poopathy Kathirgamanathan , Yun Fu Chan
发明人： Poopathy Kathirgamanathan , Yun Fu Chan
IPC分类号： H01L51/50 , C07F1/02 , H01B1/12 , C09K11/06 , C09K11/08
CPC分类号： H01L51/0077 , C07C251/24 , C07C255/61 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1029 , C09K2211/1037 , C09K2211/1044 , C09K2211/1059 , C09K2211/1088 , C09K2211/1092 , C09K2211/181 , C09K2211/185 , H01L51/005 , H01L51/0072 , H01L51/5092 , H05B33/14 , Y10S428/917
摘要： In OLEDs, improved efficiency is obtained by novel compounds which can form inter alia electron injection layers of the formula (I) wherein R1 is a 1-5 ring aryl (including polycyclic), aralkyl or heteroaryl group which is optionally substituted with one or more C1-C4 alkyl, alkoxy or cyano; R2 and R3 together form a 1-5 ring aryl (including polycyclic), aralkyl or heteroaryl group which is optionally substituted with C1-C4 alkyl, alkoxy or cyano; R4 is hydrogen, C1-C4 alkyl or aryl; and Ar is monocyclic, bicyclic or tricyclic aryl or heteroaryl which is optionally substituted with one or more C1-C4-alkyl or alkoxy groups, or an oligomer thereof.
摘要翻译：在OLED中，可以通过新颖的化合物获得改进的效率，所述新型化合物尤其可以形成式（I）的电子注入层，其中R 1是1-5个环芳基（包括多环），芳烷基或杂芳基，其任选被一个或多个 C 1 -C 4烷基，烷氧基或氰基; R2和R3一起形成任选被C 1 -C 4烷基，烷氧基或氰基取代的1-5个环芳基（包括多环），芳烷基或杂芳基; R4是氢，C1-C4烷基或芳基; 并且Ar是任选被一个或多个C 1 -C 4烷基或烷氧基取代的单环，双环或三环芳基或杂芳基，或其低聚物。

28. 发明申请

US20100033764A1 DIGITAL HALFTONING METHOD UTILIZING DIFFUSED WEIGHTING AND CLASS MATRIX OPTIMIZATION 失效
标题翻译：使用扩展加权和类矩阵优化的数字化方法
公开(公告)号：US20100033764A1
公开(公告)日：2010-02-11
申请号：US12187546
申请日：2008-08-07
申请人： Jing-ming Guo , Yun-fu Liu
发明人： Jing-ming Guo , Yun-fu Liu
IPC分类号： H04N1/405
CPC分类号： H04N1/4053
摘要： The present invention discloses a digital halftoning method. The method comprises steps of: (a1) dividing an original image into non-overlapping blocks; (a2) obtaining a Least-Mean-Square trained (LMS-trained) filter by comparing at least a training image and a halftone result corresponding to the training image (a3) optimizing a class matrix with the LMS-trained filter, which involves the diffused area and the diffused weightings; and (a4) processing the non-overlapping blocks by performing a dot diffusion procedure with the optimized class matrix and the diffused weightings to generate a halftone image corresponding to the original image. A detailed class matrix optimizing method as in the above-mentioned step (a3) is also disclosed.
摘要翻译：本发明公开了一种数字半色调方法。该方法包括以下步骤：（a1）将原始图像划分成非重叠块; （a2）通过将至少训练图像和对应于训练图像（a3）的半色调结果进行比较来获得最小均方训练（LMS训练）滤波器，该训练图像（a3）与LMS训练的滤波器优化类矩阵，其涉及扩散面积和扩散重量; 和（a4）通过利用优化的类矩阵和扩散加权执行点扩散过程来生成与原始图像相对应的半色调图像来处理非重叠块。还公开了如上述步骤（a3）中的详细的类矩阵优化方法。

29. 发明申请

US20080194087A1 Polysilicon gate formation by in-situ doping 有权
公开(公告)号：US20080194087A1
公开(公告)日：2008-08-14
申请号：US11729009
申请日：2007-03-28
申请人： Chen-Hua Yu , Ding-Yuan Chen , Chu-Yun Fu , Liang-Gi Yao , Chen-Nan Yeh
发明人： Chen-Hua Yu , Ding-Yuan Chen , Chu-Yun Fu , Liang-Gi Yao , Chen-Nan Yeh
IPC分类号： H01L21/3205 , H01L21/22 , H01L21/38
CPC分类号： H01L29/7834 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L29/165 , H01L29/6659 , H01L29/66628 , H01L29/66636 , H01L29/7833 , H01L29/7848
摘要： A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric layer on the semiconductor substrate; forming a first silicon-containing layer on the gate dielectric layer, wherein the first silicon-containing layer is substantially free from p-type and n-type impurities; forming a second silicon-containing layer over the first silicon-containing layer, wherein the second silicon-containing layer comprises an impurity; and performing an annealing to diffuse the impurity in the second silicon-containing layer into the first silicon-containing layer.

30. 发明申请

US20080194072A1 Polysilicon gate formation by in-situ doping 审中-公开
标题翻译：通过原位掺杂形成多晶硅栅
公开(公告)号：US20080194072A1
公开(公告)日：2008-08-14
申请号：US11705655
申请日：2007-02-12
申请人： Chen-Hua Yu , Ding-Yuan Chen , Chu-Yun Fu , Liang-Gi Yao , Chen-Nan Yeh
发明人： Chen-Hua Yu , Ding-Yuan Chen , Chu-Yun Fu , Liang-Gi Yao , Chen-Nan Yeh
IPC分类号： H01L21/336
CPC分类号： H01L21/82345 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L29/165 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7834 , H01L29/7848
摘要： A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric layer on the semiconductor substrate; forming a first silicon-containing layer on the gate dielectric layer, wherein the first silicon-containing layer is substantially free from p-type and n-type impurities; forming a second silicon-containing layer over the first silicon-containing layer, wherein the second silicon-containing layer comprises an impurity; and performing an annealing to diffuse the impurity in the second silicon-containing layer into the first silicon-containing layer.
摘要翻译：一种形成半导体结构的方法包括提供半导体衬底; 在所述半导体衬底上形成栅介电层; 在所述栅极电介质层上形成第一含硅层，其中所述第一含硅层基本上不含p型和n型杂质; 在所述第一含硅层上形成第二含硅层，其中所述第二含硅层包含杂质; 并进行退火以将第二含硅层中的杂质扩散到第一含硅层中。

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