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    • 24. 发明授权
    • Process of preparing high chloride {100} tabular grain emulsions
    • 制备高氯化物{100}片状颗粒乳剂的方法
    • US5879874A
    • 1999-03-09
    • US961962
    • 1997-10-31
    • Joe E. MaskaskyVictor P. ScacciaSamuel Chen
    • Joe E. MaskaskyVictor P. ScacciaSamuel Chen
    • G03C1/015G03C1/005G03C1/035
    • G03C1/0053
    • A process is disclosed for preparing high chloride {100} tabular grain emulsions containing crystal lattice dislocations in peripheral regions of the tabular grains. In the initial step of the process a radiation-sensitive high chloride {100} tabular grain emulsion is produced to provide host grains. Lateral growth lateral growth of the {100} major surfaces of the tabular grains is extended by precipitating a high chloride peripheral region onto the host tabular grains. After the host grains have been provided an iodide ion source compound with a maximum second order reaction rate constant within the dispersing medium of less than 1.times.10.sup.3 mole.sup.-1 sec.sup.-1 is introduced into the host emulsion to release iodide ions for incorporation into the tabular grains at their peripheral edges by chloride ion displacement. In the resulting emulsion 10 or more crystal lattice dislocations extending inwardly from the peripheral edges of the {100} tabular grains are observed. The dislocations in the peripheral and, particularly, corner regions of the tabular grains increase their sensitivity.
    • 公开了一种用于制备在片状颗粒的周边区域中含有晶格位错的高氯化物{100}片状颗粒乳剂的方法。 在该方法的初始步骤中,产生辐射敏感的高氯酸盐{100}片状颗粒乳剂以提供主体颗粒。 片状颗粒的{100}主表面的横向生长横向生长通过将高氯化物周边区域沉淀到主体平片状晶粒上而延长。 在提供主体颗粒之后,将在分散介质中具有小于1×10 3摩尔-1秒-1的最大二级反应速率常数的碘离子源化合物引入主体乳液中以释放碘离子以掺入片状颗粒 在其外围边缘被氯离子置换。 在所得到的乳液中观察到从{100}片状颗粒的周缘向内延伸的10个或更多个晶格位错。 周边的,特别是片状晶粒的角落区域中的位错增加了它们的灵敏度。