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21. 发明授权

US07180779B2 Memory architecture with enhanced over-erase tolerant control gate scheme 有权
标题翻译：具有增强的过擦除宽容控制门控方案的存储架构
公开(公告)号：US07180779B2
公开(公告)日：2007-02-20
申请号：US11178965
申请日：2005-07-11
申请人： Nicola Telecco , Victor Nguyen
发明人： Nicola Telecco , Victor Nguyen
IPC分类号： G11C11/34
CPC分类号： G11C16/3468 , G11C16/26 , G11C16/3477
摘要： The present invention is related to semiconductor memories, and in particular, to a nonvolatile or flash memory and method that reduces the effect of or is tolerant of over-erased memory cells. When a memory cell is read, a read voltage is applied to at least one target memory cell, and a negative bias voltage that is lower than a threshold voltage of an over-erased memory cell is also applied to at least one other selected memory cell that is in the same row as the target memory cell. Applying a negative bias voltage to adjacent or proximate memory cells shuts off nearby cells to isolate current that may come from over-erased memory cells during a read, program, or erase operation.
摘要翻译：本发明涉及半导体存储器，特别涉及一种减少过度擦除的存储单元的影响或容忍的非易失性或闪速存储器和方法。当存储单元被读取时，读取电压被施加到至少一个目标存储单元，并且低于过擦除存储单元的阈值电压的负偏置电压也被施加到至少一个其他选择的存储单元它与目标存储单元处于同一行。对相邻或邻近的存储器单元施加负偏置电压会关闭附近的单元，以隔离在读取，编程或擦除操作期间来自过擦除的存储单元的电流。

22. 发明申请

US20140273529A1 PEALD of Films Comprising Silicon Nitride 有权
标题翻译：包含氮化硅的膜的PEALD
公开(公告)号：US20140273529A1
公开(公告)日：2014-09-18
申请号：US14211024
申请日：2014-03-14
申请人： Victor Nguyen , Woong Jae Lee , Mihaela Balseanu , Li-Qun Xia , Derek R. Witty
发明人： Victor Nguyen , Woong Jae Lee , Mihaela Balseanu , Li-Qun Xia , Derek R. Witty
IPC分类号： H01L21/02
CPC分类号： H01L21/0217 , C23C16/045 , C23C16/345 , C23C16/45542 , C23C16/56 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/0234 , H01L21/02348
摘要： Provided are methods of for deposition of SiN films via PEALD processes. Certain methods pertain to exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface; purging excess silicon precursor; exposing the substrate surface to an ionized reducing agent; and purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.
摘要翻译：提供了通过PEALD工艺沉积SiN膜的方法。某些方法涉及将衬底表面暴露于硅前体以在衬底表面提供硅前体; 清除多余的硅前体; 将基板表面暴露于电离还原剂; 并且吹扫过量的电离还原剂以提供包含SiN的膜，其中所述基材的温度为23℃至约550℃。

23. 发明授权

US08598020B2 Plasma-enhanced chemical vapor deposition of crystalline germanium 有权
标题翻译：结晶锗的等离子体增强化学气相沉积
公开(公告)号：US08598020B2
公开(公告)日：2013-12-03
申请号：US12824095
申请日：2010-06-25
申请人： Victor Nguyen , Mihaela Balseanu , Li-Qun Xia , Derek R Witty
发明人： Victor Nguyen , Mihaela Balseanu , Li-Qun Xia , Derek R Witty
IPC分类号： H01L21/20
CPC分类号： H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L29/045
摘要： In a method of depositing a crystalline germanium layer on a substrate, a substrate is placed in the process zone comprising a pair of process electrodes. In a deposition stage, a crystalline germanium layer is deposited on the substrate by introducing a deposition gas comprising a germanium-containing gas into the process zone, and forming a capacitively coupled plasma of the deposition gas by coupling energy to the process electrodes. In a subsequent treatment stage, the deposited crystalline germanium layer is treated by exposing the crystalline germanium layer to an energized treatment gas or by annealing the layer.
摘要翻译：在将晶体锗层沉积在衬底上的方法中，将衬底放置在包含一对工艺电极的工艺区中。在沉积阶段，通过将包含含锗气体的沉积气体引入工艺区域中，将结晶锗层沉积在衬底上，以及通过将能量耦合到工艺电极而形成沉积气体的电容耦合等离子体。在随后的处理阶段中，通过将结晶锗层暴露于通电处理气体或通过退火该层来处理沉积的结晶锗层。

24. 发明申请

US20130173598A1 Method and Apparatus for Automated Pattern Analysis to Identify Location Information in Cellular Telephone Records 审中-公开
标题翻译：用于识别蜂窝电话记录中的位置信息的自动模式分析的方法和装置
公开(公告)号：US20130173598A1
公开(公告)日：2013-07-04
申请号：US13531553
申请日：2012-06-24
申请人： Victor Nguyen
发明人： Victor Nguyen
IPC分类号： G06F17/30
CPC分类号： G06F16/285
摘要： A method and apparatus for analyzing cellular telephone records is provided. The analysis applies a statistics-based approach to determine patterns in cellular activity and identify pertinent location information in the cellular telephone records.
摘要翻译：提供了一种用于分析蜂窝电话记录的方法和装置。该分析应用基于统计的方法来确定细胞活动中的模式并识别蜂窝电话记录中的相关位置信息。

25. 发明授权

US08337950B2 Method for depositing boron-rich films for lithographic mask applications 有权
标题翻译：沉积用于光刻掩模应用的富硼膜的方法
公开(公告)号：US08337950B2
公开(公告)日：2012-12-25
申请号：US12786245
申请日：2010-05-24
申请人： Victor Nguyen , Yi Chen , Mihaela Balseanu , Isabelita Roflox , Li-Qun Xia , Derek R Witty
发明人： Victor Nguyen , Yi Chen , Mihaela Balseanu , Isabelita Roflox , Li-Qun Xia , Derek R Witty
IPC分类号： C23C16/38 , C23C16/30
CPC分类号： C23C16/30 , C23C16/45523 , H01L21/02112 , H01L21/02271 , H01L21/02274 , H01L21/31144 , H01L21/3212 , H01L21/32139
摘要： Methods for processing a substrate with a boron rich film are provided. A patterned layer of boron rich material is deposited on a substrate and can be used as an etch stop. By varying the chemical composition, the selectivity and etch rate of the boron rich material can be optimized for different etch chemistries. The boron rich materials can be deposited over a layer stack substrate in multiple layers and etched in a pattern. The exposed layer stack can then be etched with multiple etch chemistries. Each of the boron rich layers can have a different chemical composition that is optimized for the multiple etch chemistries.
摘要翻译：提供了用富硼膜处理衬底的方法。富含硼的材料的图案层沉积在衬底上并且可以用作蚀刻停止层。通过改变化学组成，可以对不同的蚀刻化学物质优化富硼材料的选择性和蚀刻速率。富硼材料可以沉积在层叠堆叠衬底上多层并以图案蚀刻。然后可以用多个蚀刻化学品蚀刻暴露的层堆叠。每个富硼层可以具有针对多个蚀刻化学物质而优化的不同的化学组成。

26. 发明申请

US20120196450A1 METHOD TO INCREASE SILICON NITRIDE TENSILE STRESS USING NITROGEN PLASMA IN-SITU TREATMENT AND EX-SITU UV CURE 审中-公开
标题翻译：使用氮等离子体原位处理和超临界紫外线固化法增加氮化硅拉伸应力的方法
公开(公告)号：US20120196450A1
公开(公告)日：2012-08-02
申请号：US13365226
申请日：2012-02-02
申请人： Mihaela Balseanu , Victor Nguyen , Li-Qun Xia , Derek R. Witty , Hichem M'Saad , Mei-Yee Shek , Isabelita Roflox
发明人： Mihaela Balseanu , Victor Nguyen , Li-Qun Xia , Derek R. Witty , Hichem M'Saad , Mei-Yee Shek , Isabelita Roflox
IPC分类号： H01L21/3105 , H01L21/318 , H01L21/316
CPC分类号： H01L21/0234 , C23C16/345 , C23C16/56 , H01L21/02348 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/3185 , H01L21/823807 , H01L29/66583 , H01L29/7843
摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with some embodiments, a deposited silicon nitride film is exposed to curing with plasma and ultraviolet (UV) radiation, thereby helping remove hydrogen from the film and increasing film stress. In accordance with other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.
摘要翻译：氮化硅层的应力可以通过在较高温度下沉积来增强。使用允许将衬底加热到基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能设备。根据一些实施例，沉积的氮化硅膜暴露于等离子体和紫外（UV）辐射的固化，从而有助于从膜中除去氢并增加膜应力。根据其他实施例，使用采用多个沉积/固化循环的整合方法形成氮化硅膜，以在底层凸起特征的尖角处保留膜的完整性。可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

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