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    • 24. 发明授权
    • Portable electronic equipment with attachment for supplying power and
charging battery
    • 便携式电子设备,附带电源和充电电池
    • US5629602A
    • 1997-05-13
    • US318257
    • 1994-10-05
    • Toshihiko Makino
    • Toshihiko Makino
    • G06F1/26G06F1/16H01M2/10H01M10/46H02J7/00H01M10/44
    • G06F1/263H01M10/46H01M2/1022H02J7/0013H02J7/0045Y10T307/625
    • Electronic equipment includes a container unit for storing a battery or an AC adaptor which are detachable from the container unit and exchangeable with each other, an input port unit for receiving electric power from an external source, and a connection attachment unit for storing the battery and the AC adaptor which are detachable from the connection attachment unit, so that the AC adaptor can be stored in the connection attachment unit to supply DC power to the electronic equipment through the input port in order to charge the battery stored in the container unit, so that another battery can be stored in the connection attachment unit to supply DC power to the electronic equipment through the input port in order to serve as an expansion battery in addition to the battery stored in the container unit, or so that both the battery and the AC adaptor can be stored in the connection attachment unit to charge the battery.
    • 电子设备包括用于存储电池或AC适配器的容器单元,其可从容器单元拆卸并且可彼此更换,用于从外部源接收电力的输入端口单元和用于存储电池的连接附接单元 AC适配器,其可从连接附接单元拆卸,使得AC适配器可以存储在连接附接单元中,以通过输入端口向电子设备提供DC电力,以便为存储在容器单元中的电池充电,因此 另一个电池可以存储在连接附件单元中,以通过输入端口向电子设备提供直流电力,以便除了存储在容器单元中的电池之外还用作扩展电池,或者使得电池和 AC适配器可以存储在连接附件单元中以对电池充电。
    • 28. 发明申请
    • Complex-coupled distributed feedback semiconductor laser
    • 复耦分布反馈半导体激光器
    • US20070053404A1
    • 2007-03-08
    • US11280517
    • 2005-08-24
    • Toshihiko Makino
    • Toshihiko Makino
    • H01S3/08
    • H01S5/1228B82Y20/00H01S5/1064H01S5/1215H01S5/1231H01S5/22H01S5/2275H01S5/3407H01S5/34306H01S5/3434
    • The invention provides a distributed feedback semiconductor laser, having (1) a controlled complex-coupling coefficient which is not affected by grating etching depth variation, and (2) facet power asymmetry with no facet reflection which eliminates a random effect of facet grating phase. The device comprises a multiple-quantum-well active region, and a complex-coupled grating formed by periodically etching grooves through a part of the active region. The semiconductor materials for a barrier layer where the groove etching is to be stopped, a regrown layer in the etched groove, and a laser cladding layer, are chosen all the same, so as to form an active grating entirely buried in the same material, providing a complex-coupling coefficient which is defined independently of the etching depth. The second feature, “facet power asymmetry”, is provided by composing the laser cavity of two sections (“front” and “back” sections) having different (“front” and “back”) Bragg wavelengths. The front cavity section, made longer than the back cavity section, provides a main feedback mechanism for lasing: The lasing wavelength is always obtained at the longer wavelength side of the Bragg stop band of the front cavity section due to “in-phase” complex coupling. By choosing the back Bragg wavelength longer than the front Bragg wavelength, the back cavity section is made to act mainly as a reflector for the lasing wavelength, so as to produce an asymmetric power distribution in the laser cavity, resulting in an increased front facet power.
    • 本发明提供了一种分布式反馈半导体激光器,其具有(1)不受光栅蚀刻深度变化影响的受控复耦合系数,以及(2)无面反射的面功率不对称性,消除了小平面光栅相位的随机效应。 该器件包括多量子阱有源区,以及通过周期性地蚀刻通过有源区的一部分的沟槽形成的复耦合光栅。 选择要停止凹槽蚀刻的阻挡层的半导体材料,蚀刻槽中的再生长层和激光熔覆层,全部相同,以形成完全埋入同一材料中的有源光栅, 提供了独立于蚀刻深度定义的复合耦合系数。 通过组合具有不同(“前”和“后”)布拉格波长的两个部分(“前”和“后”部分)的激光腔来提供第二个特征“面功率不对称”。 前腔部分比后腔部分长,提供了激光的主反馈机制:由于“同相”复合,总是在前腔部分的布拉格阻带的较长波长侧获得激光波长 耦合。 通过选择比前布拉格波长更长的反向布拉格波长,使背腔部分主要作为激光波长的反射器起作用,从而在激光腔中产生不对称的功率分布,导致增加的前小面积功率 。