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21. 发明申请

US20070290215A1 LIGHT-EMITTING SEMICONDUCTOR DEVICE PROTECTED AGAINST REFLECTOR METAL MIGRATION, AND METHOD OF FABRICATION 有权
标题翻译：针对反射器金属迁移保护的发光半导体器件及其制造方法
公开(公告)号：US20070290215A1
公开(公告)日：2007-12-20
申请号：US11764543
申请日：2007-06-18
申请人： Takashi Kato , Junji Sato , Tetsuji Matsuo
发明人： Takashi Kato , Junji Sato , Tetsuji Matsuo
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/0079 , H01L33/387 , H01L33/46 , H01L2933/0016
摘要： An LED has a light-generating semiconductor region formed on a baseplate via a metal-made reflector layer. The light-generating semiconductor region has an active layer sandwiched between a pair of claddings of opposite conductivity types. An annular marginal space is left around the reflector layer between the light-generating semiconductor region and the substrate. In order to preclude the thermal migration of the reflector metal onto the side surfaces of the light-generating semiconductor region, with a possible short-circuiting of the pair of claddings across the active layer, an anti-migration seal is received in the annular marginal space created around the reflector layer between the light-generating semiconductor region and the baseplate.
摘要翻译： LED具有通过金属制的反射层在基板上形成的发光半导体区域。光产生半导体区域具有夹在一对相反导电类型的包层之间的有源层。在发光半导体区域和衬底之间的反射器层周围留有环形边缘空间。为了防止反射器金属在发光半导体区域的侧表面上的热迁移，通过跨越有源层的一对包层的可能的短路，反向移动密封件被接收在环形边缘在发光半导体区域和基板之间围绕反射器层产生的空间。

22. 发明授权

US07199401B2 Light-emitting semiconductor device 有权
标题翻译：发光半导体器件
公开(公告)号：US07199401B2
公开(公告)日：2007-04-03
申请号：US11058942
申请日：2005-02-16
申请人： Mikio Tazima , Masahiro Sato , Hidekazu Aoyagi , Tetsuji Matsuo
发明人： Mikio Tazima , Masahiro Sato , Hidekazu Aoyagi , Tetsuji Matsuo
IPC分类号： H01L27/15 , H01L29/22
CPC分类号： H01L33/30 , H01L33/14 , H01L33/405 , H01L33/42 , H01L33/46
摘要： An LED includes a semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating heat. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. Attached to the other major surface of the semiconductor region, via an ohmic contact layer, is a reflective metal layer for reflecting the light that has traversed the ohmic contact layer, back toward the semiconductor region. A transparent antidiffusion layer is interposed between the ohmic contact layer and the reflective layer in order to prevent the ohmic contact layer and the reflective layer from thermally diffusing from one into the other to the impairment of the reflectivity of the reflective layer.
摘要翻译： LED包括半导体区域，其具有夹在相反导电类型的两个限制层之间的活性层，用于产生热量。阴极被布置在半导体区域的相对的主表面之一的中心上，从其发射光。通过欧姆接触层附着在半导体区域的另一个主表面上，是反射金属层，用于反射穿过欧姆接触层的光，朝向半导体区域。在欧姆接触层和反射层之间插入透明的反扩散层，以防止欧姆接触层和反射层从一个扩散到另一个到反射层的反射率的损害。

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