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21. 发明专利

JP2008059736A Memory cell programmed using temperature controlled set pulse 审中-公开
标题翻译：使用温度控制设置脉冲编程的存储单元
公开(公告)号：JP2008059736A
公开(公告)日：2008-03-13
申请号：JP2007159775
申请日：2007-06-18
申请人： Qimonda North America Corp , キモンダノースアメリカコーポレイション
发明人： HAPP THOMAS , PHILIPP JAN BORIS
IPC分类号： G11C13/00 , H01L27/10 , H01L27/105 , H01L45/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/0078 , G11C2013/0092
摘要： PROBLEM TO BE SOLVED: To provide a phase change memory which can store three or more states. SOLUTION: A memory cell 202 includes a phase change material 204 arranged in an insulation material 206. The phase change material 204 is electrically coupled at one end to a first electrode 208 and at the other end to a second electrode 210. A pulse is supplied to the memory cell 202 through the first electrode 208 and the second electrode 210. A current path through the phase change material 204 is from either one of the first electrode 208 and second electrode 210 to the other one of the first electrode 208 and second electrode 210. The phase change material 204 is programmed into one of four states for storing two bits of data. A selection device is coupled to the first electrode 208 to control the pulse supply to the phase change material 204. The pulse resets the phase change material 204 and programs one of the other three states into the phase change material 204. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以存储三个或更多个状态的相变存储器。解决方案：存储器单元202包括布置在绝缘材料206中的相变材料204.相变材料204的一端电耦合到第一电极208，另一端电连接到第二电极210.A 通过第一电极208和第二电极210将脉冲提供给存储单元202.通过相变材料204的电流路径从第一电极208和第二电极210中的任一个到第一电极208中的另一个和第二电极210.相变材料204被编程为用于存储两位数据的四种状态之一。选择装置耦合到第一电极208以控制对相变材料204的脉冲供应。该脉冲重置相变材料204并将其它三种状态中的一种状态编程到相变材料204中。版权所有：（C）2008，JPO＆INPIT

22. 发明专利

JP2008021970A Memory using tunneling field effect transistor 审中-公开
标题翻译：使用隧道场效应晶体管的存储器
公开(公告)号：JP2008021970A
公开(公告)日：2008-01-31
申请号：JP2007131539
申请日：2007-05-17
申请人： Qimonda North America Corp , キモンダノースアメリカコーポレイション
发明人： NIRSCHL THOMAS
IPC分类号： H01L27/105 , H01L21/8246 , H01L27/10 , H01L29/66 , H01L29/78 , H01L29/786 , H01L45/00
CPC分类号： H01L29/7391 , H01L27/228 , H01L27/2436 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/144 , H01L45/148
摘要： PROBLEM TO BE SOLVED: To provide a phase change memory that is mentioned as a kind of a resistive memory and uses a phase change material for a resistive memory element.
SOLUTION: A memory comprises a first tunneling field effect transistor 108a including a first drain 124 and a first source 122a. The first drain is coupled to a first resistive memory element 106a. The memory comprises a second tunneling field effect transistor 108b. The second tunneling field effect transistor includes a second drain, and shares the first source 122a. The second drain is coupled to a second resistive memory element. The memory includes a first region 114 that is coupled to the first source to provide a source node.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供作为电阻式存储器的一种被提及的相变存储器，并且使用用于电阻式存储元件的相变材料。解决方案：存储器包括包括第一漏极124和第一源极122a的第一隧穿场效应晶体管108a。第一漏极耦合到第一电阻性存储元件106a。存储器包括第二隧道场效应晶体管108b。第二隧道场效应晶体管包括第二漏极，并且共享第一源极122a。第二漏极耦合到第二电阻存储元件。存储器包括耦合到第一源以提供源节点的第一区域114。版权所有（C）2008，JPO＆INPIT

23. 发明专利

JP2008193053A Spin glass memory cell 审中-公开
标题翻译：旋转玻璃存储单元
公开(公告)号：JP2008193053A
公开(公告)日：2008-08-21
申请号：JP2007314289
申请日：2007-12-05
申请人： Qimonda North America Corp , キモンダノースアメリカコーポレイション
发明人： PHILIPP JAN BORIS
IPC分类号： H01L21/8246 , G11C11/15 , G11C13/00 , H01L27/10 , H01L27/105 , H01L29/82 , H01L45/00
CPC分类号： G11C11/16 , G11C11/5607
摘要： PROBLEM TO BE SOLVED: To provide a spin glass memory cell which is capable of reducing power requirement required for programming of memory cells and also reducing the size and cost of circuitry used to program the memory cells and the cost of operating the memory cells.
SOLUTION: A spin glass memory cell 200a includes a first electrode 202, a second electrode 206, and spin glass material 204. The spin glass material is coupled between the first electrode and the second electrode.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供能够降低存储器单元的编程所需的功率需求并且还减小用于编程存储器单元的电路的尺寸和成本以及操作存储器的成本的旋转玻璃存储单元细胞。旋转玻璃存储单元200a包括第一电极202，第二电极206和旋转玻璃材料204.旋转玻璃材料连接在第一电极和第二电极之间。版权所有（C）2008，JPO＆INPIT

24. 发明专利

JP2008192278A Resistive memory including selective refresh operation 审中-公开
标题翻译：电阻式存储器，包括选择性刷新操作
公开(公告)号：JP2008192278A
公开(公告)日：2008-08-21
申请号：JP2007300530
申请日：2007-11-20
申请人： Qimonda North America Corp , キモンダノースアメリカコーポレイション
发明人： HAPP THOMAS , PHILIPP JAN BORIS
IPC分类号： G11C13/00
CPC分类号： G11C13/0069 , G11C11/406 , G11C11/40622 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/0033 , G11C16/32 , G11C16/3418 , G11C16/3431 , G11C2211/5642 , G11C2213/79
摘要： PROBLEM TO BE SOLVED: To provide a refresh technology for stabilizing data holding in a phase change memory cell. SOLUTION: A memory includes an array of each phase change memory cell and a first circuit. The first circuit is for refreshing only each memory cell within the array of each phase change memory cell that is programmed to a non-crystalline state in response to a request for refresh operation. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供用于稳定相变存储单元中的数据保持的刷新技术。解决方案：存储器包括每个相变存储器单元的阵列和第一电路。第一电路仅用于刷新响应于刷新操作的请求被编程为非结晶状态的每个相变存储器单元阵列内的每个存储器单元。版权所有（C）2008，JPO＆INPIT

25. 发明专利

JP2008176906A System preventing deterioration in data retention property 审中-公开
标题翻译：系统防止数据保留属性中的检测
公开(公告)号：JP2008176906A
公开(公告)日：2008-07-31
申请号：JP2007295808
申请日：2007-11-14
申请人： Qimonda North America Corp , キモンダノースアメリカコーポレイション
发明人： HAPP THOMAS , PHILIPP JAN BORIS
IPC分类号： G11C29/44 , H01L21/66
CPC分类号： H01L22/14 , G11C13/0004 , G11C29/08 , G11C2029/4402 , H01L23/544 , H01L2223/5444 , H01L2924/0002 , H01L2924/014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method for preventing that a data retention time of configuration data stored in a phase transition resistive memory is shortened by high temperature in the rear process. SOLUTION: A cooling system for cooling the resistive memory before after process or during after process is provided to prevent influence for a data retention by high temperature of after process. Also configuration data is read from the resistive memory after process, while the data is re-written in the resistive memory. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种防止在后处理中通过高温缩短存储在相变电阻性存储器中的配置数据的数据保持时间的方法。解决方案：提供一种用于在后处理或后续处理期间冷却电阻性存储器的冷却系统，以防止后处理高温对数据保留的影响。而且，在将数据重新写入电阻性存储器中之后，也可以从电阻性存储器读出配置数据。版权所有（C）2008，JPO＆INPIT

26. 发明专利

JP2008072088A Lower power phase change memory cell having different phase change material 审中-公开
标题翻译：较低功率相变存储单元，具有不同的相变材料
公开(公告)号：JP2008072088A
公开(公告)日：2008-03-27
申请号：JP2007179476
申请日：2007-07-09
申请人： Qimonda North America Corp , キモンダノースアメリカコーポレイション
发明人： HAPP THOMAS , PHILIPP JAN BORIS
IPC分类号： H01L27/105 , G11C13/00 , H01L45/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/1246 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： PROBLEM TO BE SOLVED: To provide a memory cell reducing required power for changing a memory state and capable of using a further fine selection device. SOLUTION: A memory cell has a first electrode 120, a second electrode 122 opposed thereto, and a memory stack 124 developed between the first electrode and the second electrode. The memory stack has a first layer 126 of a thermal insulating material in contact with the first electrode, and a second layer 128 of a thermal insulating material in contact with the second electrode, and a phase change material 130 between the first and the second layers. In the memory cell, the width D3 of an active region 140 is limited to be smaller than one of widths D1 and D2 of either of the first layer and the second layer. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种减少用于改变存储器状态并能够使用另外的精细选择装置的所需电力的存储单元。解决方案：存储单元具有第一电极120，与其相对的第二电极122和在第一电极和第二电极之间形成的存储器堆叠124。存储器堆叠具有与第一电极接触的绝热材料的第一层126和与第二电极接触的绝热材料的第二层128，以及在第一和第二层之间的相变材料130 。在存储单元中，有源区域140的宽度D3被限制为小于第一层和第二层之一的宽度D1和D2之一。版权所有（C）2008，JPO＆INPIT

27. 发明专利

JP2007329471A Memory cell containing doped phase change material 审中-公开
标题翻译：含有相变材料的存储单元
公开(公告)号：JP2007329471A
公开(公告)日：2007-12-20
申请号：JP2007130458
申请日：2007-05-16
申请人： Qimonda North America Corp , キモンダノースアメリカコーポレイション
发明人： HAPP THOMAS
IPC分类号： H01L27/105 , H01L45/00
CPC分类号： H01L45/1641 , H01L45/06 , H01L45/144 , H01L45/148
摘要： PROBLEM TO BE SOLVED: To provide a phase change memory cell which can store a plurality of data bits in order to obtain a high density phase change memory.
SOLUTION: A phase change memory cell 202 contains a phase change material 204 whose first material is doped, and the doped phase change material 204 is electrically joined to a first electrode 208 at one edge and to a second electrode 210 at another edge. When transition of the phase change material 204 from an amorphous state to a crystal state occurs, its value of resistance reduces by a factor less than ten per 20°C.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以存储多个数据位以便获得高密度相变存储器的相变存储单元。解决方案：相变存储单元202包含其第一材料被掺杂的相变材料204，并且掺杂相变材料204在一个边缘处电连接到第一电极208和在另一边缘处电连接到第二电极210 。当相变材料204从非晶状态转变为晶体状态时，其电阻值减小了每20℃小于10的因子。版权所有（C）2008，JPO＆INPIT

28. 发明专利

JP2008243353A Memory cell with trigger element 审中-公开
标题翻译：具有触发元件的存储单元
公开(公告)号：JP2008243353A
公开(公告)日：2008-10-09
申请号：JP2007305709
申请日：2007-11-27
申请人： Qimonda North America Corp , キモンダノースアメリカコーポレイション
发明人： HAPP THOMAS , NIRSCHL THOMAS , PHILIPP JAN BORIS
IPC分类号： G11C13/00 , H01L27/105 , H01L29/74 , H01L45/00
CPC分类号： G11C13/003 , G11C13/0004 , G11C2213/76
摘要： PROBLEM TO BE SOLVED: To provide a trigger component constituted so that a unipolar memory element is selectively and electrically coupled to a bit line for the access to a memory cell. SOLUTION: The trigger component 24 includes a thyristor connected to a word line 26. The thyristor is constituted so that the unipolar memory element 21 is connected to the bit line 22 when a pulse is impressed through the word line 26. It does not need for the trigger component 24 that the word line 26 is maintained at high voltage during the access period of the memory cell 21. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种触发组件，其被构造成使得单极存储元件选择性地电耦合到用于访问存储单元的位线。触发器组件24包括连接到字线26的晶闸管。晶闸管被构造成使得当通过字线26照射脉冲时，单极存储元件21连接到位线22。在存储单元21的访问周期期间，不需要触发组件24字线26被保持在高电压。版权所有（C）2009，JPO＆INPIT

29. 发明专利

JP2008235863A Pillar phase change memory cell 审中-公开
标题翻译：支柱相变记忆细胞
公开(公告)号：JP2008235863A
公开(公告)日：2008-10-02
申请号：JP2007328265
申请日：2007-12-20
申请人： Qimonda North America Corp , キモンダノースアメリカコーポレイション
发明人： HAPP THOMAS , PHILIPP JAN BORIS
IPC分类号： H01L27/105 , G11C13/00 , H01L45/00
CPC分类号： H01L45/1675 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148
摘要： PROBLEM TO BE SOLVED: To provide a pillar phase change memory cell that allows conditions, in which the pillar cell of a phase change memory becomes structurally unstable due to uneven etching, to be controlled. SOLUTION: A memory cell includes a first electrode 202, a storage location 204, and a second electrode 206. The storage location includes a phase change material, and is in contact with the first electrode. The storage location has a first cross-sectional width. The second electrode is in contact with the storage location, and has a second cross-sectional width greater than the first cross-sectional width. The first electrode, the storage location, and the second electrode constitute a pillar phase change memory cell. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种柱状相变存储单元，其允许控制相变存储器的柱单元由于不均匀蚀刻而在结构上不稳定的条件。解决方案：存储单元包括第一电极202，存储位置204和第二电极206.存储位置包括相变材料，并与第一电极接触。存储位置具有第一横截面宽度。第二电极与存储位置接触，并且具有大于第一横截面宽度的第二横截面宽度。第一电极，存储位置和第二电极构成柱相变存储单元。版权所有（C）2009，JPO＆INPIT

30. 发明专利

JP2008112434A Method and circuit for transmitting memory clock signal 审中-公开
标题翻译：用于发送存储时钟信号的方法和电路
公开(公告)号：JP2008112434A
公开(公告)日：2008-05-15
申请号：JP2007215521
申请日：2007-08-22
申请人： Qimonda North America Corp , キモンダノースアメリカコーポレイション
发明人： OH JONG-HOON
IPC分类号： G06F1/06 , G06F1/08 , G11C11/401 , G11C11/407
CPC分类号： G11C7/22 , G11C7/1051 , G11C7/1069 , G11C7/1078 , G11C7/225 , G11C2207/107
摘要： PROBLEM TO BE SOLVED: To provide a method and a circuit for transmitting a memory clock signal. SOLUTION: The method includes a process for receiving a first clock signal and a second clock signal in a memory device. The frequency of the first clock signal may be lower than the frequency of the second clock signal. The method further includes a process for performing two or more data access operations using the second clock signal. One of the two or more data access operations may include a reading operation. The method may include also a process for performing a command processing operation using the first clock signal. COPYRIGHT: (C)2008,JPO&INPIT

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