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21. 发明授权

US08174028B2 Semiconductor composite apparatus, LED, LED printhead, and image forming apparatus 有权
标题翻译：半导体复合设备，LED，LED打印头和成像设备
公开(公告)号：US08174028B2
公开(公告)日：2012-05-08
申请号：US12902172
申请日：2010-10-12
申请人： Mitsuhiko Ogihara , Masataka Muto , Tomoki Igari , Takahito Suzuki
发明人： Mitsuhiko Ogihara , Masataka Muto , Tomoki Igari , Takahito Suzuki
IPC分类号： H01L27/15
CPC分类号： H01L33/0079 , G03G15/04054 , G03G15/326 , G03G2215/0409 , H01L24/24 , H01L24/25 , H01L27/153 , H01L2224/32225 , H01L2224/48091 , H01L2224/48137 , H01L2224/49175 , H01L2224/73267 , H01L2924/01322 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor composite apparatus includes a substrate and a planarizing layer, and a semiconductor thin film. The planarizing layer is formed on the substrate either directly or indirectly. The planarizing layer includes a first surface that faces the substrate, and a second surface that is on the side of the planarizing layer remote from the substrate. The semiconductor thin film formed on the planarizing layer. The second surface has a roughness of not more than 5 nm.
摘要翻译：半导体复合装置包括基板和平坦化层以及半导体薄膜。平坦化层直接或间接地形成在基板上。平坦化层包括面向衬底的第一表面和位于平坦化层远离衬底的一侧的第二表面。形成在平坦化层上的半导体薄膜。第二表面的粗糙度不大于5nm。

22. 发明授权

US08022387B2 Composite semiconductor device having a thyristor structure 有权
标题翻译：具有晶闸管结构的复合半导体器件
公开(公告)号：US08022387B2
公开(公告)日：2011-09-20
申请号：US11535132
申请日：2006-09-26
申请人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masataka Muto , Takahito Suzuki , Tomoki Igari
发明人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masataka Muto , Takahito Suzuki , Tomoki Igari
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L25/167 , B41J2/45 , H01L27/153 , H01L33/62 , H01L2224/45144 , H01L2224/48137 , H01L2924/09701 , H01L2924/1301 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device includes a light-emitting layer of a first conductivity type, a second conductivity type or non-doped type, a first contact layer of the second conductivity type disposed on the light-emitting layer and supplied with a voltage via a predetermined contact, a second contact layer of the second conductivity type disposed below the light-emitting layer and supplied with a voltage via a predetermined contact, a first etching stopper layer of the first or second conductivity type disposed below the light-emitting layer and above the second contact layer, and a third contact layer of the first conductivity type disposed below the second contact layer and supplied with a voltage via a predetermined contact.
摘要翻译：半导体器件包括第一导电类型，第二导电类型或非掺杂类型的发光层，第二导电类型的第一接触层，设置在发光层上并且经由预定触点提供电压所述第二导电类型的第二接触层设置在所述发光层下方且经由预定接触点提供电压，所述第一或第二导电类型的第一蚀刻停止层设置在所述发光层下方和所述第二导电类型之上，接触层和第一导电类型的第三接触层，其设置在第二接触层下方并经由预定接触提供电压。

23. 发明授权

US07541620B2 Semiconductor device, light emitting diode print head, and image forming apparatus 有权
标题翻译：半导体器件，发光二极管打印头和成像设备
公开(公告)号：US07541620B2
公开(公告)日：2009-06-02
申请号：US11896189
申请日：2007-08-30
申请人： Tomohiko Sagimori , Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masataka Muto
发明人： Tomohiko Sagimori , Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masataka Muto
IPC分类号： H01L29/205
CPC分类号： H01L27/153 , B41J2/45
摘要： A semiconductor device includes a plurality of light emitting elements formed of a thin layer of a compound semiconductor and arranged in a row in one direction with an equal interval therebetween. Each of the light emitting elements includes a light emitting area formed on a surface thereof; a first conductive type side electrode formed on the surface and electrically connected to one side of the light emitting element; and a second conductive type side electrode formed on the surface and electrically connected to the other side of the light emitting element. Further, the first conductive type side electrode is disposed at a position continuously surrounding at lease two sides of the light emitting area of the light emitting area with an insulating film inbetween. The second conductive type side electrode is disposed on the light emitting area.
摘要翻译：半导体器件包括由化合物半导体的薄层形成的多个发光元件，并且在一个方向上以等间隔排列成一行。每个发光元件包括在其表面上形成的发光区域; 形成在所述表面上并与所述发光元件的一侧电连接的第一导电型侧电极; 以及形成在所述表面上并电连接到所述发光元件的另一侧的第二导电型侧电极。此外，第一导电型侧电极设置在发光区域的发光区域的至少两侧的位置处，其间具有绝缘膜。第二导电型侧电极设置在发光区域上。

24. 发明申请

US20080063431A1 Semiconductor device, light emitting diode head, and image forming apparatus 有权
标题翻译：半导体器件，发光二极管头和成像设备
公开(公告)号：US20080063431A1
公开(公告)日：2008-03-13
申请号：US11896829
申请日：2007-09-06
申请人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masataka Muto , Takahito Suzuki , Tomoki Igari
发明人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masataka Muto , Takahito Suzuki , Tomoki Igari
IPC分类号： G03G15/04 , H01L33/00
CPC分类号： G03G15/326 , B41J2/45 , G03G15/04054 , G03G2215/0409 , H01L27/153
摘要： A semiconductor device includes a substrate; a first conductive type semiconductor layer disposed on a main surface of the substrate; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; a plurality of light emitting elements; and a second conductive side wiring pattern for commonly connecting the second conductive type semiconductor layer in the light emitting elements arranged adjacently. The second conductive type semiconductor layer includes a first conductive type semiconductor connection surface and a second conductive type semiconductor connection surface between the first conductive type semiconductor layer.
摘要翻译：半导体器件包括衬底; 设置在所述基板的主表面上的第一导电型半导体层; 设置在所述第一导电型半导体层上的第二导电型半导体层; 多个发光元件; 以及用于共同连接相邻布置的发光元件中的第二导电类型半导体层的第二导电侧布线图案。第二导电型半导体层包括第一导电型半导体连接面和第一导电型半导体层之间的第二导电型半导体连接面。

25. 发明申请

US20080054273A1 Semiconductor device, light emitting diode print head, and image forming apparatus 有权
标题翻译：半导体器件，发光二极管打印头和成像设备
公开(公告)号：US20080054273A1
公开(公告)日：2008-03-06
申请号：US11896189
申请日：2007-08-30
申请人： Tomohiko Sagimori , Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masataka Muto
发明人： Tomohiko Sagimori , Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masataka Muto
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , B41J2/45
摘要： A semiconductor device includes a plurality of light emitting elements formed of a thin layer of a compound semiconductor and arranged in a row in one direction with an equal interval therebetween. Each of the light emitting elements includes a light emitting area formed on a surface thereof; a first conductive type side electrode formed on the surface and electrically connected to one side of the light emitting element; and a second conductive type side electrode formed on the surface and electrically connected to the other side of the light emitting element. Further, the first conductive type side electrode is disposed at a position continuously surrounding at lease two sides of the light emitting area of the light emitting area with an insulating film inbetween. The second conductive type side electrode is disposed on the light emitting area.
摘要翻译：半导体器件包括由化合物半导体的薄层形成的多个发光元件，并且在一个方向上以等间隔排列成一行。每个发光元件包括在其表面上形成的发光区域; 形成在所述表面上并与所述发光元件的一侧电连接的第一导电型侧电极; 以及形成在所述表面上并电连接到所述发光元件的另一侧的第二导电型侧电极。此外，第一导电型侧电极设置在发光区域的发光区域的至少两侧的位置处，其间具有绝缘膜。第二导电型侧电极设置在发光区域上。

26. 发明申请

US20080042155A1 Semiconductor device, LED head and image forming apparatus 审中-公开
标题翻译：半导体器件，LED头和成像设备
公开(公告)号：US20080042155A1
公开(公告)日：2008-02-21
申请号：US11819385
申请日：2007-06-27
申请人： Hironori Furuta , Mitsuhiko Ogihara , Hiroyuki Fujiwara , Tomoki Igari , Masataka Muto
发明人： Hironori Furuta , Mitsuhiko Ogihara , Hiroyuki Fujiwara , Tomoki Igari , Masataka Muto
IPC分类号： H01L33/00 , H01L23/544
CPC分类号： H01L33/58 , B41J2/45 , G03G15/04036 , H01L21/78 , H01L33/0095
摘要： A semiconductor device is manufactured using dicing of a semiconductor wafer. The semiconductor device includes a substrate, a base insulating layer formed on the substrate, a semiconductor element formed on the base insulating layer, and a separate pattern portion formed on an end portion of the substrate separately from the base insulating layer. The separate pattern portion prevents the base insulating layer from being peeled off from the substrate when the dicing is performed.
摘要翻译：使用半导体晶片的切割制造半导体器件。半导体器件包括基板，形成在基板上的基底绝缘层，形成在基底绝缘层上的半导体元件以及与基底绝缘层分开形成在基板的端部上的单独图案部分。当执行切割时，单独的图案部分防止基底绝缘层从基板剥离。

27. 发明申请

US20080023716A1 Semiconductor combined device, light emitting diode head, and image forming apparatus 审中-公开
标题翻译：半导体组合器件，发光二极管头和成像设备
公开(公告)号：US20080023716A1
公开(公告)日：2008-01-31
申请号：US11826903
申请日：2007-07-19
申请人： Tomohiko Sagimori , Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masataka Muto
发明人： Tomohiko Sagimori , Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masataka Muto
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： H01L27/15 , B41J2/45 , H01L27/153
摘要： A semiconductor combined device includes a substrate and a light emitting element disposed on the substrate. The light emitting element includes a mesa slope inclined relative to the substrate by a first angle; a light emitting portion extending in parallel to the substrate; an interlayer insulation layer covering the mesa slope and having a surface at the mesa slope inclined relative to the substrate by a second angle smaller than the first angle; an electrode connected to the light emitting portion; and a protection layer covering the light emitting portion.
摘要翻译：半导体组合器件包括衬底和设置在衬底上的发光元件。发光元件包括相对于衬底倾斜第一角度的台面斜面; 平行于基板延伸的发光部; 层间绝缘层，其覆盖所述台面斜面，并且所述台面的表面相对于所述基板倾斜相对于所述第一角度小的第二角度; 连接到发光部分的电极; 以及覆盖发光部的保护层。

28. 发明申请

US20070262331A1 SEMICONDUCTOR DEVICE, LED PRINTHEAD, AND IMAGE FORMING APPARATUS 有权
标题翻译：半导体器件，LED打印头和图像形成装置
公开(公告)号：US20070262331A1
公开(公告)日：2007-11-15
申请号：US11738557
申请日：2007-04-23
申请人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masataka Muto , Tomoki Igari , Hiroshi Kurokawa
发明人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masataka Muto , Tomoki Igari , Hiroshi Kurokawa
IPC分类号： H01L33/00 , H01L31/12 , H01L27/15 , H01L29/26
CPC分类号： B41J2/451 , H01L33/38 , H01L2924/0002 , H01L2924/00
摘要： An inclined surface having an inclination angle θ is formed in an edge portion which forms an opening portion of an inter-layer insulating film, thereby reducing a stress by the inclined surface.
摘要翻译：在形成层间绝缘膜的开口部分的边缘部分中形成具有倾斜角度θ的倾斜表面，从而减小倾斜表面的应力。

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