专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20070190436A1 RESIST COMPOSITION 有权
公开(公告)号：US20070190436A1
公开(公告)日：2007-08-16
申请号：US11621895
申请日：2007-01-10
申请人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
发明人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
IPC分类号： G03C5/00
CPC分类号： G03F7/70616 , G03F7/0382 , G03F7/0397 , G03F7/70341 , Y10S430/106 , Y10S430/111
摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

22. 发明申请

US20060166130A1 Photoresist composition and method for forming resist pattern using the same 失效
标题翻译：光刻胶组合物及其形成方法
公开(公告)号：US20060166130A1
公开(公告)日：2006-07-27
申请号：US10547427
申请日：2004-03-24
申请人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida
发明人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida
IPC分类号： G03C1/76
CPC分类号： G03F7/0046 , G03F7/0395 , Y10S430/108
摘要： A photoresist composition containing a polymer (A) containing an alkali-soluble constituent unit (a1) containing an alicyclic group having both a fluorine atom or a fluorinated alkyl group (i) and an alcoholic hydroxyl group (ii), whose alkali-solubility is changeable by an action of an acid; an acid generator (B) which generates an acid by light irradiation; and a dissolution inhibitor (C) having a fluorine atom(s) and/or a nitrogen-containing compound (D) selected from a tertiary amine (d1) having a polar group, a tertiary alkylamine (d2) having 7 or more and 15 or less of carbon atoms or an ammonium salt (d3). The composition has a resist property capable of accomplishing line and space (1:1) of 90 nm or less in good shape as a pattern processing accuracy of a semiconductor integrated circuit by lithography.
摘要翻译： 1.一种光致抗蚀剂组合物，其含有含有具有氟原子或氟代烷基（i）和醇羟基（ii）的脂环族基团的碱溶性结构单元（a1）的聚合物（A），其碱溶性为可以通过酸的作用而变化; 通过光照射产生酸的酸产生剂（B）; 和具有氟原子的溶解抑制剂（C）和/或选自具有极性基团的叔胺（d1），具有7以上的叔烷基胺（d2）和15以上的含氮化合物（D）或更少的碳原子或铵盐（d3）。该组合物具有能够通过光刻作为半导体集成电路的图案处理精度而实现90nm或更小的线和空间（1：1）的良好形状的抗蚀剂性质。

23. 发明申请

US20050258473A1 Semiconductor device of non- volatile memory 有权
标题翻译：非易失性存储器半导体器件
公开(公告)号：US20050258473A1
公开(公告)日：2005-11-24
申请号：US11185006
申请日：2005-07-20
申请人： Masaaki Yoshida , Hiroaki Nakanishi
发明人： Masaaki Yoshida , Hiroaki Nakanishi
IPC分类号： H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L27/115 , H01L27/11524 , H01L29/42328 , H01L29/66825 , H01L29/7883
摘要： A non-volatile memory semiconductor device includes a first insulation layer, two diffusion regions, a memory gate oxide layer, a first control gate, a second insulation layer, a floating gate of polysilicon, a third insulation layer and a second control gate. The first insulation layer is formed on a semiconductor substrate. The two diffusion regions are formed on a surface of the substrate. The memory gate oxide layer is formed over the two diffusion regions on the substrate. The first control gate including a diffusion region is formed on the surface of the substrate. The second insulation layer is formed on the first control gate. The floating gate of polysilicon is formed over the memory gate oxide layer, the first insulation layer, and the second insulation layer. The third insulation layer is formed on the floating gate. The second control gate is disposed on the floating gate.
摘要翻译：非易失性存储器半导体器件包括第一绝缘层，两个扩散区域，存储栅极氧化物层，第一控制栅极，第二绝缘层，多晶硅浮置栅极，第三绝缘层和第二控制栅极。第一绝缘层形成在半导体衬底上。两个扩散区形成在基板的表面上。存储栅极氧化层形成在衬底上的两个扩散区上。包括扩散区域的第一控制栅极形成在基板的表面上。第二绝缘层形成在第一控制栅极上。多晶硅的浮栅形成在存储栅极氧化物层，第一绝缘层和第二绝缘层上。第三绝缘层形成在浮动栅上。第二控制栅极设置在浮动栅极上。

24. 发明授权

US06949790B2 Semiconductor device and its manufacturing method 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06949790B2
公开(公告)日：2005-09-27
申请号：US10479629
申请日：2002-09-18
申请人： Moriya Iwai , Masaaki Yoshida , Hiroaki Nakanishi
发明人： Moriya Iwai , Masaaki Yoshida , Hiroaki Nakanishi
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11526 , H01L27/115 , H01L27/11521 , H01L27/11534 , H01L27/11558 , H01L29/42324 , H01L29/7883
摘要： A semiconductor device is capable of being applied with both a positive and a negative voltage to its control gate, and writing to its memory requires a low voltage. A control gate is formed on a memory unit region of a field oxide film, and an inter-layer silicon oxide film is formed on its surface. A gate oxide film for a non-volatile memory is formed on a P substrate between N type diffusion layers. The floating gate is formed on the inter-layer silicon oxide film, the field oxide film, and the gate oxide film for the non-volatile memory. Since a large coupling ratio between the control gate and the floating gate is available on the field oxide film, memory rewriting requires only a low voltage. Further, since the control gate is formed by a poly silicon film, both a positive voltage and a negative voltage can be applied to the control gate.
摘要翻译：半导体器件能够向其控制栅极施加正电压和负电压，并且对其存储器的写入需要低电压。在场氧化膜的存储单元区域上形成控制栅极，在其表面上形成层间氧化硅膜。在N型扩散层之间的P基板上形成用于非易失性存储器的栅极氧化膜。浮动栅极形成在层间氧化硅膜，场氧化膜和用于非易失性存储器的栅极氧化物膜上。由于控制栅极和浮置栅极之间的大的耦合比可用于场氧化物膜，存储器重写仅需要低电压。此外，由于控制栅极由多晶硅膜形成，所以可以向控制栅极施加正电压和负电压。

25. 发明申请

US20050014090A1 Resist composition 有权
标题翻译：抗蚀组成
公开(公告)号：US20050014090A1
公开(公告)日：2005-01-20
申请号：US10845620
申请日：2004-05-13
申请人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
发明人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
IPC分类号： G03C1/76 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/20 , G03F7/26 , H01L21/027
CPC分类号： G03F7/70616 , G03F7/0382 , G03F7/0397 , G03F7/70341 , Y10S430/106 , Y10S430/111
摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.
摘要翻译：提供了相对于在浸没式光刻工艺中使用的溶剂是稳定的并且显示出优异的灵敏度和抗蚀剂图案轮廓的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。抗蚀剂组合物是根据预定参数，或是包含含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物，酸产生剂组分（B）和有机溶剂（C），其中，成分（A）含有来自含有酸解离性，溶解抑制基团但不含结构单元（a0）的（甲基）丙烯酸酯的结构单元（a1）含有二羧酸的酸酐的单元（a0-1）和含有酚羟基的结构单元（a0-2）。

26. 发明授权

US06841709B2 Method of cutting polymer chains and method for producing chemical raw materials 失效
标题翻译：切割聚合物链的方法和生产化学原料的方法
公开(公告)号：US06841709B2
公开(公告)日：2005-01-11
申请号：US09984519
申请日：2001-10-30
申请人： Masaaki Yoshida
发明人： Masaaki Yoshida
IPC分类号： C07C51/27 , C10G1/10 , C07C4/00 , C07C55/00 , C10G1/00
CPC分类号： C10G1/10 , C07C51/27 , Y02P20/544 , C07C55/02
摘要： The present invention is to provide a technology to establish a new cycle-based organic chemical industry, which may be called a polymer cascade (polymer reflux industry) wherein the polymer substances shall not remain the final products, but still give birth to synthetic materials as raw materials for chemical industry and produce useful organic compounds.The present invention to destroy polymer substances by severing a part of molecular chains from the said polymer substances by means of allowing nitrogen dioxide and/or dinitrogen tetraoxide to do oxidative decomposition reaction in inert gas, or destroying polymer substances by severing a part or all of molecular chains from the said polymer substances by allowing nitrogen dioxide and/or dinitrogen tetraoxide to do oxidative decomposition reaction in supercritical carbon dioxide, or to treat polymer substances that are at least one of what are selected from polymer substances of addition polymerization type, polyaddition type, polycondensation type or addition condensation type, or waste polymers thereof, or petroleum fraction of high boiling point.
摘要翻译：本发明是提供一种建立新的循环有机化学工业的技术，其可以被称为聚合物级联（聚合物回流工业），其中聚合物物质不应该保留在最终产品中，但仍然产生合成材料作为本发明通过使二氧化氮和/或四氧化二氮在惰性气体中进行氧化分解反应而从所述聚合物物质中切断一部分分子链而破坏聚合物物质，或通过使二氧化氮和/或四氧化二氮在超临界二氧化碳中进行氧化分解反应而切断所述聚合物物质的一部分或全部分子链，或者处理至少一种以上的聚合物物质来破坏聚合物物质选自加成聚合型聚合物，加聚型，聚合物还原型或加成缩合型，或其废聚合物，或高沸点的石油馏分。

27. 发明授权

US06696357B2 Method for manufacturing semiconductor integrated circuit devices using a conductive layer to prevent peeling between a bonding pad and an underlying insulating film 失效
标题翻译：使用导电层制造半导体集成电路器件以防止接合焊盘和下层绝缘膜之间的剥离的方法
公开(公告)号：US06696357B2
公开(公告)日：2004-02-24
申请号：US10195716
申请日：2002-07-16
申请人： Toshinori Imai , Tsuyoshi Fujiwara , Tomohiro Shiraishi , Hiroshi Ashihara , Masaaki Yoshida
发明人： Toshinori Imai , Tsuyoshi Fujiwara , Tomohiro Shiraishi , Hiroshi Ashihara , Masaaki Yoshida
IPC分类号： H01L2160
CPC分类号： H01L24/05 , H01L21/76838 , H01L24/03 , H01L24/45 , H01L24/48 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05558 , H01L2224/05624 , H01L2224/45015 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/04941 , H01L2924/05042 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： Peeling between a bonding pad and an insulating film which underlies the bonding pad is to be prevented. A laminate film constituted mainly by W which is higher in mechanical strength than a wiring layer using an Al alloy film as a main conductive layer and than a bonding pad, is formed within an aperture formed in silicon oxide films and is interposed between the wiring line and the bonding pad.
摘要翻译：要防止接合焊盘与接合焊盘之下的绝缘膜之间的剥离。主要由W构成的层叠膜形成在形成于氧化硅膜中的孔内，其机械强度高于使用Al合金膜作为主导电层的布线层和焊盘，并且插入在布线和接合垫。

28. 发明授权

US06288735B1 Color image recording method, color image recording apparatus, and color image recording controlling method 失效
标题翻译：彩色图像记录方法，彩色图像记录装置和彩色图像记录控制方法
公开(公告)号：US06288735B1
公开(公告)日：2001-09-11
申请号：US09008159
申请日：1998-01-16
申请人： Shoji Naramoto , Masaaki Yoshida , Tomoaki Kasugaya , Norio Takahashi , Masafumi Kobayashi
发明人： Shoji Naramoto , Masaaki Yoshida , Tomoaki Kasugaya , Norio Takahashi , Masafumi Kobayashi
IPC分类号： B41J232
CPC分类号： B41J2/36
摘要： To suppress color moire in a color image recording apparatus, a method for recording a color image by forming recording dots of at least first through third colors on a recording medium in a plurality of lines of recording dots each extending in a main scan direction and a plurality of rows of recording dots each extending in a sub-scan direction, wherein each line is divided into a predetermined number of lines in a sub-scanning direction to form sub-lines, and dots are printed in a respective sub-line for every line. Printing is performed so a respective dot for at least one color is arranged so that the number of sub-lines between the respective recording dot and a recording dot immediately before the respective recording dot in the sub-scanning direction is different from the number of sub-lines between the respective recording dot and a recording dot immediately after the respective recording dot, and in adjacent rows in the main scanning direction, recording dots are formed so that repeating phases of the recording dots differ from each other.
摘要翻译：为了抑制彩色图像记录装置中的彩色莫尔条纹，通过在主扫描方向上延伸的多行记录点的记录介质上形成至少第一至第三颜色的记录点来记录彩色图像的方法，以及多个沿副扫描方向延伸的记录点行，其中每条线在副扫描方向上划分成预定数量的线以形成子线，并且在每一个子线中打印点线。执行打印，使得至少一种颜色的各个点被布置成使得各个记录点和紧邻在副扫描方向上的各个记录点之前的记录点之间的子行数不同于子扫描方向的数量在相应记录点和紧接在各个记录点之后的记录点之间的行和在主扫描方向上的相邻行中，形成记录点，使得记录点的重复相位彼此不同。

29. 发明授权

US6087632A Heat processing device with hot plate and associated reflector 失效
标题翻译：热处理装置与热板和相关的反射器
公开(公告)号：US6087632A
公开(公告)日：2000-07-11
申请号：US227874
申请日：1999-01-11
申请人： Kengo Mizosaki , Masaaki Yoshida
发明人： Kengo Mizosaki , Masaaki Yoshida
IPC分类号： H01L21/00 , H01L21/27 , H01L21/324
CPC分类号： H01L21/67115
摘要： A heat processing device includes a hot plate on which a substrate is placed, a heater press-fitted in the hot plate for heating the substrate through the hot plate, and a reflecting plate facing an underside and side faces of the hot plate at a distance therefrom for reflecting heat radiated from the hot plate. An outside frame is arranged on the surface of the hot plate so as to surround the substrate.
摘要翻译：热处理装置包括其上放置有基板的加热板，压入加热板中的用于通过加热板加热基板的加热器和远离热板的下侧和侧面的反射板用于反射从热板辐射的热量。外部框架布置在热板的表面上以包围基板。

30. 发明授权

US5963449A Interlock apparatus for a transfer machine 失效
标题翻译：用于转印机的联锁装置
公开(公告)号：US5963449A
公开(公告)日：1999-10-05
申请号：US904848
申请日：1997-08-01
申请人： Yoshiharu Ota , Masaaki Yoshida , Shinya Tanoue , Tatsuya Iwasaki
发明人： Yoshiharu Ota , Masaaki Yoshida , Shinya Tanoue , Tatsuya Iwasaki
IPC分类号： B65G49/07 , H01L21/00 , H01L21/677 , G06F19/00
CPC分类号： H01L21/67748 , H01L21/67242 , H01L21/67259
摘要： An interlock apparatus for a transfer machine includes a drive unit for driving the arms of a transfer machine for transferring a substrate such as an LCD substrate. The apparatus also includes a control unit having a monitor function for monitoring a parameter representing the movement condition of the arms and stopping the drive unit when the parameter exceed a predetermined value. The apparatus also includes a switching function for selectively switching the predetermined value between a teaching mode in which the position of the arm is controlled and a practical operation mode in which the transfer machine is actually operated.
摘要翻译：用于转印机的互锁装置包括驱动单元，用于驱动用于转移诸如LCD基板的基板的转印机的臂。该装置还包括具有监视功能的控制单元，用于监视表示臂的运动状态的参数，并且当参数超过预定值时停止驱动单元。该装置还包括切换功能，用于在控制臂的位置的教学模式和实际操作转移机器的实际操作模式之间选择性地切换预定值。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式