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21. 发明申请

US20120264246A1 Method of Selective Photo-Enhanced Wet Oxidation for Nitride Layer Regrowth on Substrates 有权
标题翻译：选择性光增强湿氧化氮化层在基板上再生的方法
公开(公告)号：US20120264246A1
公开(公告)日：2012-10-18
申请号：US13086663
申请日：2011-04-14
申请人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
发明人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
IPC分类号： H01L31/18 , H01L21/205
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02603 , H01L21/02639 , H01L33/007 , H01L33/06
摘要： Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.
摘要翻译：本公开的各种实施方案涉及对衬底上的氮化物层再生长的选择性光增强湿氧化。一方面，一种方法可以包括：在衬底的第一表面上形成具有第一低带隙能的第一III族氮化物层; 在所述第一III族氮化物层上形成具有第一高带隙能的第二III族氮化物层; 通过光增强湿氧化将第一III-氮化物层的部分转变成多个III-氧化物条; 在所述III氧化物条之间的所述第二III族氮化物层上形成具有第二低带隙能量的多个III族氮化物纳米线; 并且通过选择性光增强氧化将至少一些III族氮化物纳米线选择性地转化为III族氧化物纳米线。

22. 发明申请

US20110057185A1 THIN FILM TRANSISTOR 审中-公开
标题翻译：薄膜晶体管
公开(公告)号：US20110057185A1
公开(公告)日：2011-03-10
申请号：US12609337
申请日：2009-10-30
申请人： Lung-Han PENG , Sung Li WANG , Hong-Wei KUO
发明人： Lung-Han PENG , Sung Li WANG , Hong-Wei KUO
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/78696
摘要： A thin film transistor includes a channel layer. The channel layer has a plurality of stacked oxide layers. The oxide layers are made of at least two different oxide materials. The channel layer modulates a threshold voltage of the thin film transistor. An insulating interface layer is formed between the channel layer and an insulating dielectric layer, thereby transforming the thin film transistor from a depletion type transistor to an enhanced type transistor.
摘要翻译：薄膜晶体管包括沟道层。沟道层具有多个堆叠的氧化物层。氧化物层由至少两种不同的氧化物材料制成。沟道层调制薄膜晶体管的阈值电压。在沟道层和绝缘介电层之间形成绝缘界面层，从而将薄膜晶体管从耗尽型晶体管转换为增强型晶体管。

23. 发明申请

US20090185412A1 PHASE-CHANGE MATERIAL, MEMORY UNIT AND METHOD FOR ELECTRICALLY STORING/READING DATA 有权
标题翻译：相变材料，存储单元和电存储/读取数据的方法
公开(公告)号：US20090185412A1
公开(公告)日：2009-07-23
申请号：US12182644
申请日：2008-07-30
申请人： Lung-Han Peng , Sung-Li Wang , Meng-Kuei Hsieh , Chien-Yu Chen
发明人： Lung-Han Peng , Sung-Li Wang , Meng-Kuei Hsieh , Chien-Yu Chen
IPC分类号： G11C11/00 , H01L45/00 , C01B21/20 , C01G15/00 , C01G17/00
CPC分类号： C23C14/0676 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/145 , H01L45/1625 , Y10S438/90
摘要： A phase-change material and a memory unit using the phase-change material are provided. The phase-change material is in a single crystalline state and includes a compound of a metal oxide or nitroxide, wherein the metal is at least one selected from a group consisting of indium, gallium and germanium. The memory unit includes a substrate; at least a first contact electrode formed on the substrate; a dielectric layer disposed on the substrate and formed with an opening for a layer of the phase-change material to be formed therein; and at least a second contact electrode disposed on the dielectric layer. As the phase-change material is in a single crystalline state and of a great discrepancy between high and low resistance states, the memory unit using the phase-changed material can achieve a phase-change characteristic rapidly by pulse voltage and avert any incomplete reset while with a low critical power.
摘要翻译：提供了相变材料和使用该相变材料的存储单元。相变材料为单晶状态，包括金属氧化物或氮氧化物的化合物，其中金属为选自铟，镓和锗的至少一种。存储单元包括基板; 至少形成在所述基板上的第一接触电极; 介电层，其设置在所述基板上，并且形成有用于要形成在其中的所述相变材料层的开口; 以及设置在电介质层上的至少第二接触电极。由于相变材料处于单晶状态，在高电阻状态和低电阻状态之间存在很大的差异，所以使用相变材料的存储器单元可以通过脉冲电压快速获得相变特性，并避免任何不完全复位具有低临界功率。

24. 发明申请

US20090026471A1 LIGHT-SCATTERING STRUCTURE, LIGHT EMITTING DEVICE COMPRISING THE SAME AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：光散射结构，包含该发光结构的发光装置及其形成方法
公开(公告)号：US20090026471A1
公开(公告)日：2009-01-29
申请号：US11829651
申请日：2007-07-27
申请人： Han-Min Wu , Lung-Han Peng
发明人： Han-Min Wu , Lung-Han Peng
IPC分类号： H01L33/00 , G02F1/1335 , H01S5/00
CPC分类号： G02B5/0278 , G02B5/0221 , G02B5/0268 , G02F2001/133607 , H01L33/22 , H01L2933/0091 , H01S5/005 , H01S5/026 , H01S5/0267
摘要： A light-scattering structure with micron-scale or submicron-scale protruding portions is provided to improve the light extraction efficiency of light emitting devices. The protruding portions function as scattering sites and can be assembled closely. A method of forming a light-scattering structure is also provided, wherein all the conventional substrate materials can be used for the substrate of the light-scattering structure, and scattering sites of submicron-scale, micron-scale or larger size can be fabricated.
摘要翻译：提供具有微米级或亚微米级突出部分的光散射结构，以提高发光器件的光提取效率。突出部分作为散射部位起作用，可以紧密组合。还提供了一种形成光散射结构的方法，其中所有常规基板材料都可用于光散射结构的基板，并且可以制造亚微米级，微米级或更大尺寸的散射位置。

25. 发明授权

US5895223A Method for etching nitride 失效
标题翻译：蚀刻氮化物的方法
公开(公告)号：US5895223A
公开(公告)日：1999-04-20
申请号：US988301
申请日：1997-12-10
申请人： Lung-Han Peng , Chih-Wei Chuang , Jin-Kuo Ho , Chin-Yuan Chen
发明人： Lung-Han Peng , Chih-Wei Chuang , Jin-Kuo Ho , Chin-Yuan Chen
IPC分类号： H01L21/311 , H01L21/318 , H01L21/302
CPC分类号： H01L21/31111 , H01L21/3185
摘要： A method for etching nitride is provided, by which the etching rate and the roughness of the etching surface can be powerfully controlled, and by which the etching depth can be in-situ monitored. The etching method comprises the steps of: (i) coating a first electrode on a nitride chip; (ii) mounting the nitride chip on a holding device; (iii)dipping the holding device, the nitride chip and the first electrode in electrolysis liquid; (iv) irradiating the nitride chip with a UV light having a wavelength shorter than 254 nm; and (v) connecting the first electrode to a second electrode dipped in the electrolysis liquid by a galvanometer to in-situ monitor the etching current, so as to in-situ control the etching depth.
摘要翻译：提供了一种蚀刻氮化物的方法，通过该方法可以有效地控制蚀刻表面的蚀刻速率和粗糙度，并且可以原位监测蚀刻深度。蚀刻方法包括以下步骤：（i）在氮化物芯片上涂覆第一电极; （ii）将氮化物芯片安装在保持装置上; （iii）将保持装置，氮化物片和第一电极浸入电解液中; （iv）用波长短于254nm的UV光照射氮化物芯片; 和（v）通过电流计将第一电极连接到浸入电解液中的第二电极，以便原位监测蚀刻电流，从而原位控制蚀刻深度。

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