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    • 27. 发明申请
    • Substrate processing apparatus and substrate processing method
    • 基板加工装置及基板处理方法
    • US20050092351A1
    • 2005-05-05
    • US10695826
    • 2003-10-30
    • Takayuki SaitoTsukuru SuzukiKaoru YamadaKenya ItoMasayuki KamezawaKenji Yamaguchi
    • Takayuki SaitoTsukuru SuzukiKaoru YamadaKenya ItoMasayuki KamezawaKenji Yamaguchi
    • B08B3/02H01L21/00
    • H01L21/6708B08B3/02Y10S134/902
    • The present invention provides a substrate processing apparatus and a substrate processing method suitable for use in an etching apparatus which etches a thin film formed on a peripheral portion of a substrate. The present invention also provides a substrate processing apparatus and a substrate processing method suitable for use in a cleaning apparatus which performs a cleaning process on a substrate which has been etched. The substrate processing apparatus for use in etching includes a substrate holder 11 for holding a substrate W substantially horizontally and rotating the substrate W, and a processing liquid supply unit 15 for supplying a processing liquid onto a peripheral portion of the substrate W which is being rotated in such a manner that the processing liquid is stationary with respect to the substrate W. The substrate processing apparatus for use in cleaning a substrate includes a substrate holder 54 for holding a substrate W substantially horizontally and rotating the substrate W, and a cleaning liquid supply unit 53 having a cleaning liquid outlet 53a which is oriented from a center of the substrate W toward a peripheral portion of the substrate W with an elevation angle of not more than 45° from a surface of the substrate W. The cleaning liquid supply unit 53 supplies a cleaning liquid to the surface of the substrate W at a flow velocity of not less than 0.1 m/s.
    • 本发明提供一种适用于腐蚀形成在基板的周边部分上的薄膜的蚀刻装置中的基板处理装置和基板处理方法。 本发明还提供一种适用于在已被蚀刻的基板上进行清洗处理的清洗装置的基板处理装置和基板处理方法。 用于蚀刻的基板处理装置包括基板保持器11,用于基本上水平地保持基板W并旋转基板W;以及处理液体供应单元15,用于将处理液体供应到正在旋转的基板W的周边部分 处理液体相对于基板W是静止的。用于清洗基板的基板处理装置包括:基板保持件54,用于基本上水平地保持基板W并旋转基板W;以及清洗液供给部 单元53具有从基板W的中心朝向基板W的周边部分取向的清洗液出口53a,其与基板W的表面具有不大于45°的仰角。清洗液供给单元 53以不小于0.1m / s的流速向基板W的表面供给清洗液。
    • 30. 发明申请
    • Substrate processing apparatus and substrate processing method
    • 基板加工装置及基板处理方法
    • US20090090397A1
    • 2009-04-09
    • US12314197
    • 2008-12-05
    • Takayuki SaitoTsukuru SuzukiKaoru YamadaKenya ItoMasayuki KamezawaKenji Yamaguchi
    • Takayuki SaitoTsukuru SuzukiKaoru YamadaKenya ItoMasayuki KamezawaKenji Yamaguchi
    • B08B3/04
    • H01L21/6708B08B3/02Y10S134/902
    • The present invention provides a substrate processing apparatus and a substrate processing method suitable for use in an etching apparatus which etches a thin film formed on a peripheral portion of a substrate. The present invention also provides a substrate processing apparatus and a substrate processing method suitable for use in a cleaning apparatus which performs a cleaning process on a substrate which has been etched. The substrate processing apparatus for use in etching includes a substrate holder 11 for holding a substrate W substantially horizontally and rotating the substrate W, and a processing liquid supply unit 15 for supplying a processing liquid onto a peripheral portion of the substrate W which is being rotated in such a manner that the processing liquid is stationary with respect to the substrate W. The substrate processing apparatus for use in cleaning a substrate includes a substrate holder 54 for holding a substrate W substantially horizontally and rotating the substrate W, and a cleaning liquid supply unit 53 having a cleaning liquid outlet 53a which is oriented from a center of the substrate W toward a peripheral portion of the substrate W with an elevation angle of not more than 45° from a surface of the substrate W. The cleaning liquid supply unit 53 supplies a cleaning liquid to the surface of the substrate W at a flow velocity of not less than 0.1 m/s.
    • 本发明提供一种适用于腐蚀形成在基板的周边部分上的薄膜的蚀刻装置中的基板处理装置和基板处理方法。 本发明还提供一种适用于在已被蚀刻的基板上进行清洗处理的清洗装置的基板处理装置和基板处理方法。 用于蚀刻的基板处理装置包括基板保持器11,用于基本上水平地保持基板W并旋转基板W;以及处理液体供应单元15,用于将处理液体供应到正在旋转的基板W的周边部分 处理液体相对于基板W是静止的。用于清洗基板的基板处理装置包括:基板保持件54,用于基本上水平地保持基板W并旋转基板W;以及清洗液供给部 单元53具有从基板W的中心朝向基板W的周边部分取向的清洗液出口53a,其与基板W的表面的仰角不大于45°。清洗液供给单元53 以不小于0.1m / s的流速将清洗液供给到基板W的表面。