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    • 26. 发明授权
    • Power amplifier
    • 功率放大器
    • US08692620B2
    • 2014-04-08
    • US13541049
    • 2012-07-03
    • Moon Suk JeonJung-Rin WooSang Hwa JungJung Hyun KimYoung KwonIl Do Jung
    • Moon Suk JeonJung-Rin WooSang Hwa JungJung Hyun KimYoung KwonIl Do Jung
    • H03F3/04
    • H03F3/211H03F1/0211
    • A power amplifier including a MOSFET including a source supplied with a first DC power, a gate connected to an RF input signal, and a drain connected to a power supply terminal of an RF power amplification unit; a supply voltage modulation control unit that determines a DC gate voltage of the MOSFET based on an envelope of the RF input signal; and a bypass circuit connected between the drain and the power supply terminal. The MOSFET outputs a second DC power via the drain and amplifies the RF input signal based on a third DC power substantially identical to a differential between the first and the second DC power, and also outputs an RF power via the drain. The bypass circuit receives and rectifies the RF power to supply a recycled DC power to the power supply terminal of the RF power amplification unit.
    • 一种功率放大器,包括:包括提供有第一直流电源的源极的MOSFET,连接到RF输入信号的栅极和连接到RF功率放大单元的电源端子的漏极; 电源电压调制控制单元,其基于RF输入信号的包络确定MOSFET的DC栅极电压; 以及连接在漏极和电源端子之间的旁路电路。 MOSFET通过漏极输出第二直流电源,并且基于与第一和第二直流电力之间的差分基本相同的第三直流功率放大RF输入信号,并且还经由漏极输出RF功率。 旁路电路接收并整流RF功率以将再循环的DC电力提供给RF功率放大单元的电源端子。
    • 27. 发明授权
    • LED driving device
    • LED驱动装置
    • US08653749B2
    • 2014-02-18
    • US13108535
    • 2011-05-16
    • Bo Hyun HwangJung Sun KwonSeung Kon KongJung Hyun KimJae Shin LeeJoon Youp Sung
    • Bo Hyun HwangJung Sun KwonSeung Kon KongJung Hyun KimJae Shin LeeJoon Youp Sung
    • H05B37/02
    • H05B33/0827H05B33/0818
    • Disclosed herein is a light emitting diode (LED) driving device for driving a multi-channel LED element or an LED array for each channel, the LED driving device including: a constant current driver driving currents flowing in each channel; and a minimum voltage selector receiving voltage levels of each channel and selecting a minimum voltage level to thereby feedback the selected minimum voltage level to the constant current driver, wherein matching characteristics of currents flowing in each channel is improved and a size of an integrated circuit (IC) chip is also reduced as compared to a case according to the related art, thereby making it possible to reduce a production cost and satisfy the trend of miniaturization of the chip, while solving a performance deterioration problem due to deterioration of the matching of the currents between the channels.
    • 本发明公开了一种用于驱动每个通道的多通道LED元件或LED阵列的发光二极管(LED)驱动装置,该LED驱动装置包括:驱动在每个通道中流动的电流的恒流驱动器; 以及最小电压选择器,其接收每个通道的电压电平并选择最小电压电平,从而将所选择的最小电压电平反馈给恒流驱动器,其中提高了在每个通道中流动的电流的匹配特性,并且集成电路 IC)芯片与现有技术的情况相比也降低,从而可以降低生产成本并满足芯片小型化的趋势,同时解决由于匹配引起的性能劣化问题 通道之间的电流。
    • 28. 发明申请
    • POWER AMPLIFIER
    • 功率放大器
    • US20140009232A1
    • 2014-01-09
    • US13541049
    • 2012-07-03
    • Moon Suk JeonJung-Rin WooSang Hwa JungJung Hyun KimYoung KwonIl Do Jung
    • Moon Suk JeonJung-Rin WooSang Hwa JungJung Hyun KimYoung KwonIl Do Jung
    • H03F3/45
    • H03F3/211H03F1/0211
    • A power amplifier including a MOSFET including a source supplied with a first DC power, a gate connected to an RF input signal, and a drain connected to a power supply terminal of an RF power amplification unit; a supply voltage modulation control unit that determines a DC gate voltage of the MOSFET based on an envelope of the RF input signal; and a bypass circuit connected between the drain and the power supply terminal. The MOSFET outputs a second DC power via the drain and amplifies the RF input signal based on a third DC power substantially identical to a differential between the first and the second DC power, and also outputs an RF power via the drain. The bypass circuit receives and rectifies the RF power to supply a recycled DC power to the power supply terminal of the RF power amplification unit.
    • 一种功率放大器,包括:包括提供有第一直流电源的源极的MOSFET,连接到RF输入信号的栅极和连接到RF功率放大单元的电源端子的漏极; 电源电压调制控制单元,其基于RF输入信号的包络确定MOSFET的DC栅极电压; 以及连接在漏极和电源端子之间的旁路电路。 MOSFET通过漏极输出第二直流电源,并且基于与第一和第二直流电力之间的差分基本相同的第三直流功率放大RF输入信号,并且还经由漏极输出RF功率。 旁路电路接收并整流RF功率以将再循环的DC电力提供给RF功率放大单元的电源端子。
    • 30. 发明授权
    • Package module structure for high power device with metal substrate and method of manufacturing the same
    • 具有金属基板的大功率器件的封装模块结构及其制造方法
    • US08497586B2
    • 2013-07-30
    • US13520284
    • 2010-02-16
    • Kyoung-Min KimJung-Hyun Kim
    • Kyoung-Min KimJung-Hyun Kim
    • H01L29/02
    • H01L23/367H01L23/4006H01L23/562H01L2224/32245
    • A method of manufacturing a package module structure of a high power device using a metal substrate that can improve reliability by minimizing stress due to a thermal expansion coefficient difference between a metal substrate and a semiconductor device includes: preparing a metal substrate; forming an oxide layer by selectively anodizing the metal substrate; forming a mounting groove for mounting a semiconductor device by etching a portion of the oxide layer; installing a shock-absorbing substrate that is made of a material having a thermal expansion coefficient in a range similar to a material of a semiconductor device to expose the entirety or a portion of a bottom portion of the mounting groove; mounting the semiconductor device in the shock-absorbing substrate exposed to the mounting groove; and electrically connecting an electrode terminal of the semiconductor device and an electrode line formed in an upper surface of the oxide layer.
    • 一种使用能够通过使由于金属基板与半导体器件之间的热膨胀系数差导致的应力最小化而提高可靠性的金属基板的高功率器件的封装模块结构的制造方法,其特征在于,包括:准备金属基板; 通过选择性地阳极氧化金属基底来形成氧化物层; 通过蚀刻所述氧化物层的一部分形成用于安装半导体器件的安装槽; 安装由具有与半导体器件的材料类似的范围内的热膨胀系数的材料制成的吸震衬底,以露出安装槽的整个或一部分底部; 将半导体器件安装在暴露于安装槽的减震基板中; 并且电连接半导体器件的电极端子和形成在氧化物层的上表面中的电极线。