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21. 发明授权

US08592266B2 Replacement gate MOSFET with a high performance gate electrode 有权
公开(公告)号：US08592266B2
公开(公告)日：2013-11-26
申请号：US12912963
申请日：2010-10-27
申请人： Zhengwen Li , Dechao Guo , Randolph F. Knarr , Chengwen Pei , Gan Wang , Yanfeng Wang , Keith Kwong Hon Wong , Jian Yu , Jun Yuan
发明人： Zhengwen Li , Dechao Guo , Randolph F. Knarr , Chengwen Pei , Gan Wang , Yanfeng Wang , Keith Kwong Hon Wong , Jian Yu , Jun Yuan
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L29/42368 , H01L29/42376 , H01L29/49 , H01L29/66545 , H01L29/6659 , H01L29/66606 , H01L29/78 , H01L29/7833
摘要： In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.

22. 发明申请

US20130285754A1 THROUGH SILICON VIA-BASED OSCILLATOR WAFER-LEVEL-PACKAGE STRUCTURE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：通过硅基的振荡器水平包装结构及其制造方法
公开(公告)号：US20130285754A1
公开(公告)日：2013-10-31
申请号：US13530199
申请日：2012-06-22
申请人： CHI-CHUNG CHANG , CHIH-HUNG CHIU , YEN-CHI CHEN , KUAN-NENG CHEN , JIAN-YU SHIH
发明人： CHI-CHUNG CHANG , CHIH-HUNG CHIU , YEN-CHI CHEN , KUAN-NENG CHEN , JIAN-YU SHIH
IPC分类号： H03B1/00 , H01L21/60
CPC分类号： H03H9/1021 , H03H9/19
摘要： The present invention provides a TSV-based oscillator WLP structure and a method for fabricating the same. The method of the present invention comprises steps: providing a silicon base having an oscillator unit disposed thereon; forming on the silicon base at least one package ring surrounding the oscillator unit; and disposing a silicon cap on the package ring to envelop the oscillator unit. The present invention adopts a cap and a base, which are made of the same material, to effectively overcome the problem of thermal stress occurring in a conventional sandwich package structure. Further, the present invention elaborately designs the wiring on the lower surface of the base to reduce the package size and decrease consumption of noble metals.
摘要翻译：本发明提供一种基于TSV的振荡器WLP结构及其制造方法。本发明的方法包括以下步骤：提供设置在其上的振荡器单元的硅基底; 在所述硅基底上形成围绕所述振荡器单元的至少一个封装环; 以及在封装环上设置硅帽以封装振荡器单元。本发明采用由相同材料制成的盖和底座，以有效克服常规夹层结构中发生的热应力问题。此外，本发明精细地设计在基底的下表面上的布线，以减少包装尺寸并降低贵金属的消耗。

23. 发明授权

US08569810B2 Metal semiconductor alloy contact with low resistance 有权
公开(公告)号：US08569810B2
公开(公告)日：2013-10-29
申请号：US12961553
申请日：2010-12-07
申请人： Jian Yu , Jeffrey B. Johnson , Zhengwen Li , Chengwen Pei , Michael Hargrove
发明人： Jian Yu , Jeffrey B. Johnson , Zhengwen Li , Chengwen Pei , Michael Hargrove
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66477 , H01L21/28518 , H01L21/76814 , H01L21/76831 , H01L23/485 , H01L29/495 , H01L29/4966 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device is provided that includes forming a gate structure on a channel portion of a semiconductor substrate, forming an interlevel dielectric layer over the gate structure, and forming a opening through the interlevel dielectric layer to an exposed surface of the semiconductor substrate containing at least one of the source region and the drain region. A metal semiconductor alloy contact is formed on the exposed surface of the semiconductor substrate. At least one dielectric sidewall spacer is formed on sidewalls of the opening. An interconnect is formed within the opening in direct contact with the metal semiconductor alloy contact.

24. 发明授权

US08528384B2 Method of determining surface pore mouth diameter distribution of porous material 有权
标题翻译：确定多孔材料表面孔口直径分布的方法
公开(公告)号：US08528384B2
公开(公告)日：2013-09-10
申请号：US13119722
申请日：2009-11-03
申请人： Yan Huang , Jian Yu
发明人： Yan Huang , Jian Yu
IPC分类号： G01N15/08
CPC分类号： G01N15/088
摘要： The invention relates to a method for the determination of the pore-mouth size distribution at the surface of porous materials. (i) While the backside of the sample is purged with a gas, the sample is immersed into a liquid wetting agent. (ii) The gas pressure is gradually decreased, and the gas flowrate is monitored; or, the gas flowrate is gradually decreased, and the gas pressure is monitored. (iii) When the gas flow stops, the remaining pressure in the system corresponds to the largest pore-mouth size. (iv) The pore-mouth size distribution can be calculated through a “dry curve” and a “wet curve”, which are curves of the gas flowrate vs. pressure at the dry and wetted states of the sample. The calculation of the pore-mouth size and the pore-mouth size distribution is the same as that based on the conventional bubble point method. The measurement of the pore-mouth size of the porous materials is of great importance when they are used as the substrates for surface coatings.
摘要翻译：本发明涉及一种确定多孔材料表面孔隙大小分布的方法。（i）当用气体吹扫样品的背面时，将样品浸入液体润湿剂中。（ii）气体压力逐渐降低，监测气体流量; 或者，气体流量逐渐降低，并且监测气体压力。（iii）当气体流动停止时，系统中的剩余压力对应于最大的孔口大小。（iv）孔口大小分布可以通过“干曲线”和“湿曲线”来计算，该曲线是样品干燥和润湿状态下的气体流量与压力的曲线。孔口大小和孔口大小分布的计算与基于常规泡点法的计算相同。多孔材料的孔口大小的测量在用作表面涂层的基材时是非常重要的。

25. 发明授权

US08481279B2 Methods of treating lung cancer using inhibitors anaplastic lymphoma kinase 有权
标题翻译：使用抑制剂间变性淋巴瘤激酶治疗肺癌的方法
公开(公告)号：US08481279B2
公开(公告)日：2013-07-09
申请号：US13366679
申请日：2012-02-06
申请人： Klarisa Rikova , Herbert Haack , Laura Sullivan , Ailan Guo , Anthony Possemato , Joan MacNeill , Ting-Lei Gu , Jian Yu
发明人： Klarisa Rikova , Herbert Haack , Laura Sullivan , Ailan Guo , Anthony Possemato , Joan MacNeill , Ting-Lei Gu , Jian Yu
IPC分类号： C12Q1/48 , A61K31/00 , C12N9/12
CPC分类号： G01N33/574 , A61K38/00 , C07K2319/00 , C12N9/1205 , C12Q1/6886 , C12Q2600/136 , C12Q2600/156 , G01N33/57484 , G01N2333/9121 , Y10T436/117497
摘要： In accordance with the invention, novel gene deletions and translocations involving chromosome 2 resulting in fusion proteins combining part of Anaplastic Lymphoma Kinase (ALK) kinase with part of a secondary protein have now been identified in human solid tumors, e.g. non-small cell lung carcinoma (NSCLC). Secondary proteins include Echinoderm Microtubule-Associated Protein-Like 4 (EML-4) and TRK-Fusion Gene (TFG). The EML4-ALK fusion protein, which retains ALK tyrosine kinase activity, was confirmed to drive the proliferation and survival of NSCLC characterized by this mutation. The invention therefore provides, in part, isolated polynucleotides and vectors encoding the disclosed mutant ALK kinase polypeptides, probes for detecting it, isolated mutant polypeptides, recombinant polypeptides, and reagents for detecting the fusion and truncated polypeptides. The disclosed identification of this new fusion protein enables methods for screening for compounds that inhibit the proteins, and methods for inhibiting the progression of a cancer characterized by the mutant polynucleotides or polypeptides.
摘要翻译：根据本发明，现在已经在人类实体肿瘤中鉴定了涉及染色体2的新基因缺失和易位，导致将部分间变性淋巴瘤激酶（ALK）激酶与部分二级蛋白结合的融合蛋白。非小细胞肺癌（NSCLC）。次级蛋白包括棘皮动物微管相关蛋白样4（EML-4）和TRK-融合基因（TFG）。确认了保留ALK酪氨酸激酶活性的EML4-ALK融合蛋白，以驱动以这种突变为特征的NSCLC的增殖和存活。因此，本发明部分地提供分离的多核苷酸和编码所公开的突变ALK激酶多肽的载体，用于检测其的探针，分离的突变多肽，重组多肽和用于检测融合和截短的多肽的试剂。所公开的这种新的融合蛋白的鉴定使得能够筛选抑制蛋白质的化合物的方法，以及抑制以突变多核苷酸或多肽为特征的癌症进展的方法。

26. 发明授权

US08415250B2 Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device 有权
标题翻译：在半导体器件的区域上选择性地形成不同形状的硅化物触点的方法
公开(公告)号：US08415250B2
公开(公告)日：2013-04-09
申请号：US13097459
申请日：2011-04-29
申请人： Emre Alptekin , Dong-Ick Lee , Viraj Yashawant Sardesai , Cung Do Tran , Jian Yu , Reinaldo Ariel Vega , Rajasekhar Venigalla
发明人： Emre Alptekin , Dong-Ick Lee , Viraj Yashawant Sardesai , Cung Do Tran , Jian Yu , Reinaldo Ariel Vega , Rajasekhar Venigalla
IPC分类号： H01L29/417
CPC分类号： H01L29/7833 , H01L21/28518 , H01L21/76805 , H01L21/76843 , H01L21/76855 , H01L23/485 , H01L29/0847 , H01L29/66636 , H01L29/7834 , H01L2924/0002 , H01L2924/00
摘要： A structure and method for fabricating silicide contacts for semiconductor devices is provided. Specifically, the structure and method involves utilizing chemical vapor deposition (CVD) and annealing to form silicide contacts of different shapes, selectively on regions of a semiconductor field effect transistor (FET), such as on source and drain regions. The shape of silicide contacts is a critical factor that can be manipulated to reduce contact resistance. Thus, the structure and method provide silicide contacts of different shapes with low contact resistance, wherein the silicide contacts also mitigate leakage current to enhance the utility and performance of FETs in low power applications.
摘要翻译：提供了一种用于制造用于半导体器件的硅化物触点的结构和方法。具体地，该结构和方法涉及利用化学气相沉积（CVD）和退火以在半导体场效应晶体管（FET）（例如源极和漏极区域）的区域上选择性地形成不同形状的硅化物接触。硅化物触点的形状是可以被操纵以降低接触电阻的关键因素。因此，该结构和方法提供具有低接触电阻的不同形状的硅化物触点，其中硅化物触点还减轻漏电流以增强低功率应用中的FET的效用和性能。

27. 发明申请

US20130068902A1 STAND FOR DISPLAY DEVICE 有权
标题翻译：用于显示设备的显示器
公开(公告)号：US20130068902A1
公开(公告)日：2013-03-21
申请号：US13550608
申请日：2012-07-17
申请人： Chun-Ming HUANG , Shih-Hsiung YEN , Jian-Yu LIN
发明人： Chun-Ming HUANG , Shih-Hsiung YEN , Jian-Yu LIN
IPC分类号： H05K7/00 , F16M11/20
CPC分类号： F16M11/10 , E05Y2900/606 , F16M13/022 , F16M2200/041
摘要： A stand for a display device is provided and includes a housing having an accommodating groove, a hinge structure including a first board and two second boards, and a latch including an operation portion. The first board is fixed on a backboard of the display device and has a positioning groove. The two second boards are rotatably connected respectively to two ends of the first board and each is fixed on the housing. The latch is flexibly placed on the housing and is aligned with the first board. The operation portion is exposed through the accommodating groove. The fastening portion is selectively engaged with the positioning groove by releasing a spring force of a spring connected to the latch. When the operation portion is moved in a direction away from the first board, the fastening portion is disengaged from the positioning groove by compressing the spring.
摘要翻译：提供了一种用于显示装置的支架，并且包括具有容纳槽的壳体，包括第一板和两个第二板的铰链结构以及包括操作部的闩锁。第一板固定在显示装置的背板上并具有定位槽。两个第二板分别可旋转地连接到第一板的两端，并且每个固定在壳体上。闩锁灵活地放置在壳体上并与第一板对齐。操作部通过容纳槽露出。通过释放连接到闩锁的弹簧的弹簧力，紧固部分与定位槽选择性地接合。当操作部分沿远离第一板的方向移动时，紧固部分通过压缩弹簧与定位槽脱离。

28. 发明授权

US08377642B2 Gene defects and mutant ALK kinase in human solid tumors 有权
公开(公告)号：US08377642B2
公开(公告)日：2013-02-19
申请号：US12891987
申请日：2010-09-28
申请人： Klarisa Rikova , Herbert Haack , Laura Sullivan , Ailan Guo , Anthony Possemato , Joan MacNeill , Ting-Lei Gu , Jian Yu
发明人： Klarisa Rikova , Herbert Haack , Laura Sullivan , Ailan Guo , Anthony Possemato , Joan MacNeill , Ting-Lei Gu , Jian Yu
IPC分类号： C12Q1/68 , C07H21/00 , C12N9/12
CPC分类号： C12Q1/6886 , A61K31/713 , A61K38/00 , C07K14/47 , C07K2319/00 , C12N9/12 , C12N9/1205 , C12Q2600/112 , C12Q2600/156 , C12Q2600/158 , C12Y207/10001 , G01N33/57423 , G01N33/57484 , G01N33/6893 , G01N2333/912 , G01N2333/9121
摘要： In accordance with the invention, novel gene deletions and translocations involving chromosome 2 resulting in fusion proteins combining part of Anaplastic Lymphoma Kinase (ALK) kinase with part of a secondary protein have now been identified in human solid tumors, e.g. non-small cell lung carcinoma (NSCLC). Secondary proteins include Echinoderm Microtubule-Associated Protein-Like 4 (EML-4) and TRK-Fusion Gene (TFG). The EML4-ALK fusion protein, which retains ALK tyrosine kinase activity, was confirmed to drive the proliferation and survival of NSCLC characterized by this mutation. The invention therefore provides, in part, isolated polynucleotides and vectors encoding the disclosed mutant ALK kinase polypeptides, probes for detecting it, isolated mutant polypeptides, recombinant polypeptides, and reagents for detecting the fusion and truncated polypeptides. The disclosed identification of this new fusion protein enables new methods for determining the presence of these mutant ALK kinase polypeptides in a biological sample, methods for screening for compounds that inhibit the proteins, and methods for inhibiting the progression of a cancer characterized by the mutant polynucleotides or polypeptides, which are also provided by the invention.

29. 发明申请

US20120275208A1 RELIABLE ELECTRICAL FUSE WITH LOCALIZED PROGRAMMING AND METHOD OF MAKING THE SAME 有权
标题翻译：具有本地化编程的可靠电气保险丝及其制造方法
公开(公告)号：US20120275208A1
公开(公告)日：2012-11-01
申请号：US13095164
申请日：2011-04-27
申请人： Yan Zun Li , Zhengwen Li , Chengwen Pei , Jian Yu
发明人： Yan Zun Li , Zhengwen Li , Chengwen Pei , Jian Yu
IPC分类号： G11C17/16 , H01L21/8238 , H01L23/62
CPC分类号： H01L23/62 , G11C17/16 , H01L21/02532 , H01L21/28518 , H01L21/76886 , H01L21/823814 , H01L21/84 , H01L23/5256 , H01L27/1203 , H01L2924/0002 , H01L2924/00
摘要： An electrical fuse has an anode contact on a surface of a semiconductor substrate. The electrical fuse has a cathode contact on the surface of the semiconductor substrate spaced from the anode contact. The electrical fuse has a link within the substrate electrically interconnecting the anode contact and the cathode contact. The link comprises a semiconductor layer and a silicide layer. The silicide layer extends beyond the anode contact. An opposite end of the silicide layer extends beyond the cathode contact. A silicon germanium region is embedded in the semiconductor layer under the silicide layer, between the anode contact and the cathode contact.
摘要翻译：电熔丝在半导体衬底的表面上具有阳极接触。电熔丝在半导体衬底的与阳极接触件间隔开的表面上具有阴极接触。电熔丝在衬底内具有连接阳极接触件和阴极接触件的连接。该连接件包括半导体层和硅化物层。硅化物层延伸超过阳极接触。硅化物层的另一端延伸超过阴极接触。在硅化物层之下的阳极接触和阴极接触之间的半导体层中嵌入硅锗区。

30. 发明授权

US08288102B2 Gene defects and mutant ALK kinase in human solid tumors 有权
公开(公告)号：US08288102B2
公开(公告)日：2012-10-16
申请号：US12714457
申请日：2010-02-27
申请人： Klarisa Rikova , Herbert Haack , Laura Sullivan , Ailan Guo , Anthony Possemato , Joan MacNeill , Ting-Lei Gu , Jian Yu
发明人： Klarisa Rikova , Herbert Haack , Laura Sullivan , Ailan Guo , Anthony Possemato , Joan MacNeill , Ting-Lei Gu , Jian Yu
IPC分类号： C12Q1/68 , C12N9/12 , C07H21/00
CPC分类号： C12Q1/6886 , A61K31/713 , A61K38/00 , C07K14/47 , C07K2319/00 , C12N9/12 , C12N9/1205 , C12Q2600/112 , C12Q2600/156 , C12Q2600/158 , C12Y207/10001 , G01N33/57423 , G01N33/57484 , G01N33/6893 , G01N2333/912 , G01N2333/9121
摘要： In accordance with the invention, novel gene deletions and translocations involving chromosome 2 resulting in fusion proteins combining part of Anaplastic Lymphoma Kinase (ALK) kinase with part of a secondary protein have now been identified in human solid tumors, e.g. non-small cell lung carcinoma (NSCLC). Secondary proteins include Echinoderm Microtubule-Associated Protein-Like 4 (EML-4) and TRK-Fusion Gene (TFG). The EML4-ALK fusion protein, which retains ALK tyrosine kinase activity, was confirmed to drive the proliferation and survival of NSCLC characterized by this mutation. The invention therefore provides, in part, isolated polynucleotides and vectors encoding the disclosed mutant ALK kinase polypeptides, probes for detecting it, isolated mutant polypeptides, recombinant polypeptides, and reagents for detecting the fusion and truncated polypeptides. The disclosed identification of this new fusion protein enables new methods for determining the presence of these mutant ALK kinase polypeptides in a biological sample, methods for screening for compounds that inhibit the proteins, and methods for inhibiting the progression of a cancer characterized by the mutant polynucleotides or polypeptides, which are also provided by the invention.

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