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21. 发明授权

US07291554B2 Method for forming semiconductor device 有权
标题翻译：半导体器件形成方法
公开(公告)号：US07291554B2
公开(公告)日：2007-11-06
申请号：US11090885
申请日：2005-03-28
申请人： Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
发明人： Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
IPC分类号： H01L21/28
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L21/76807 , H01L21/76808 , H01L21/76817 , H01L21/76828
摘要： A method for forming a semiconductor device includes the steps of forming a flowable film made of an insulating material with flowability; forming a first concave portion in the flowable film through transfer of a convex portion of a pressing face of a pressing member by pressing the pressing member against the flowable film; forming a solidified film having the first concave portion by solidifying the flowable film through annealing at a first temperature with the pressing member pressed against the flowable film; forming a burnt film having the first concave portion by burning the solidified film through annealing at a second temperature higher than the first temperature; forming a second concave portion connected at least to the first concave portion in the burnt film by forming, on the burnt film, a mask having an opening for forming the second concave portion and etching the burnt film by using the mask; and forming a plug and a metal interconnect by filing the first concave portion and the second concave portion of the burnt film with a conductive film.
摘要翻译：一种形成半导体器件的方法包括以下步骤：形成由具有流动性的绝缘材料制成的可流动膜; 通过将所述按压部件压靠在所述可流动膜上，通过使按压部件的按压面的凸部转移而在所述可流动膜中形成第一凹部; 通过使所述挤压构件压靠在所述可流动膜上，在第一温度下使所述可流动膜固化，形成具有所述第一凹部的固化膜; 通过在比所述第一温度高的第二温度退火来烧结所述固化膜，形成具有所述第一凹部的燃烧膜; 通过在所述燃烧膜上形成具有用于形成所述第二凹部的开口的掩模，并且通过使用所述掩模来蚀刻所述燃烧膜，形成至少与所述燃烧膜中的所述第一凹部连接的第二凹部; 以及通过用导电膜填充所述燃烧膜的所述第一凹部和所述第二凹部来形成插塞和金属互连。

22. 发明授权

US07282452B2 Etching method, semiconductor and fabricating method for the same 有权
标题翻译：蚀刻方法，半导体及其制造方法相同
公开(公告)号：US07282452B2
公开(公告)日：2007-10-16
申请号：US10679464
申请日：2003-10-07
申请人： Kenshi Kanegae , Shinichi Imai , Hideo Nakagawa
发明人： Kenshi Kanegae , Shinichi Imai , Hideo Nakagawa
IPC分类号： H01L21/302
CPC分类号： H01L21/31053 , H01L21/31116 , H01L21/31144 , H01L21/76801 , H01L21/76802 , H01L21/76804 , H01L21/76805 , H01L21/76807 , H01L21/76808 , H01L21/76822 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76835
摘要： An organic/inorganic hybrid film represented by SiCx−HyOz (x>0, y≧0, z>0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portion of the organic/inorganic hybrid film due to the existence of the nitrogen in the etching gas, to thereby reform the surface portion. The reformed surface portion is nicely plasma-etched with the etching gas containing fluorine and carbon.
摘要翻译：由SiC x-x O x z（x> 0，y> = 0，z> 0）表示的有机/无机混合膜，用含氟，碳和氮的蚀刻气体进行等离子体蚀刻。在蚀刻期间，由于蚀刻气体中存在氮，从有机/无机混合膜的表面部分除去碳成分，从而使表面部分重新形成。重整表面部分用含氟和碳的蚀刻气体进行等离子体蚀刻。

23. 发明申请

US20070218643A1 Material for forming insulating film with low dielectric constant, low dielectric insulating film, method for forming low dielectric insulating film and semiconductor device 有权
标题翻译：用于形成具有低介电常数的绝缘膜的材料，低介电绝缘膜，用于形成低介电绝缘膜的方法和半导体器件
公开(公告)号：US20070218643A1
公开(公告)日：2007-09-20
申请号：US11798085
申请日：2007-05-10
申请人： Hideo Nakagawa , Masaru Sasago
发明人： Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L21/76
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/312 , H01L21/316 , H01L21/31695 , H01L23/5222 , H01L23/5329 , H01L24/03 , H01L24/05 , H01L24/48 , H01L2221/1047 , H01L2224/04042 , H01L2224/05093 , H01L2224/05556 , H01L2224/05599 , H01L2224/27416 , H01L2224/451 , H01L2224/48463 , H01L2224/85424 , H01L2224/85447 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01074 , H01L2924/12044 , H01L2224/45099 , H01L2924/00
摘要： A material for forming an insulating film with low dielectric constant of this invention is a solution including a fine particle principally composed of a silicon atom and an oxygen atom and having a large number of pores, a resin and a solvent.
摘要翻译：用于形成本发明的具有低介电常数的绝缘膜的材料是包括主要由硅原子和氧原子组成并且具有大量孔隙的细颗粒，树脂和溶剂的溶液。

24. 发明申请

US20070108616A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070108616A1
公开(公告)日：2007-05-17
申请号：US10578003
申请日：2005-05-20
申请人： Hideo Nakagawa , Atsushi Ikeda , Nobuo Aoi
发明人： Hideo Nakagawa , Atsushi Ikeda , Nobuo Aoi
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76831 , H01L21/76846 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an insulation film 6 formed on a silicon substrate 1, a buried metal interconnect 8 formed in the insulation film 6, and a barrier metal film 7 formed between the insulation film 6 and the metal interconnect 8. The barrier metal film 7 is a metal compound film. The metal compound film is characterized by including at least one of elements forming the insulation film.
摘要翻译：半导体器件包括形成在硅衬底1上的绝缘膜6，形成在绝缘膜6中的掩埋金属互连8和形成在绝缘膜6和金属互连8之间的阻挡金属膜7。阻挡金属膜7是金属化合物膜。金属化合物膜的特征在于包括形成绝缘膜的元素中的至少一种。

25. 发明授权

US07126208B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 失效
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US07126208B2
公开(公告)日：2006-10-24
申请号：US10706863
申请日：2003-11-12
申请人： Motoaki Iwabuchi , Fujio Yagihashi , Yoshitaka Hamada , Hideo Nakagawa , Masaru Sasago
发明人： Motoaki Iwabuchi , Fujio Yagihashi , Yoshitaka Hamada , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L23/58 , H01L21/31
CPC分类号： C08G77/16 , C08G77/04 , C08G77/08 , C08K5/235 , C09D183/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , C08L83/04
摘要： Provided are a composition for forming porous film which can form a porous film having practical mechanical strength in a simple and low cost process; a porous film and a method for forming the film; and an inexpensive, high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising a polymer which is obtainable by hydrolyzing and condensing one or more silane compounds represented by Formula (1), or preferably by hydrolyzing and co-condensing one or more silane compounds represented by Formula (1) and one more silane compounds represented by Formula (2), Formulas (1) and (2) being: (R1)aSi(R2)4-a (1) (R3)bSi(R4)4-b (2) Also provided is a method for forming porous film comprising a step of applying said composition on a substrate to form film and a step of transforming the film into porous film.
摘要翻译：提供一种用于形成多孔膜的组合物，其可以以简单且低成本的方法形成具有实际机械强度的多孔膜; 多孔膜和形成膜的方法; 以及包含多孔膜的便宜，高性能和高可靠性的半导体器件。更具体地说，提供了一种用于形成多孔膜的组合物，其包含通过水解和缩合一种或多种由式（1）表示的硅烷化合物，或优选通过水解和共缩合一种或多种由式（1）和另外一个由式（2），式（1）和（2）表示的硅烷化合物是：<？in-line-formula description =“In-line formula”end =“lead” （1）＆lt;＆lt; 1＆gt;＆lt; 1＆gt;＆lt; 1＆gt; “In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？>（R <3> ）（2）<βin-line-formula description =“In-line Formulas”end =“tail”？ >还提供了一种形成多孔膜的方法，包括将所述组合物施加在基底上以形成膜的步骤和将膜转化为多孔膜的步骤。

26. 发明授权

US07084505B2 Porous film, composition and manufacturing method, interlayer dielectric film, and semiconductor device 失效
标题翻译：多孔膜，组成和制造方法，层间绝缘膜和半导体器件
公开(公告)号：US07084505B2
公开(公告)日：2006-08-01
申请号：US10808361
申请日：2004-03-25
申请人： Yoshitaka Hamada , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L23/48
CPC分类号： C08J9/0014 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： A porous film-forming composition comprising (A) a curable silicone resin having a Mn of at least 100, (B) a micelle-forming surfactant, and (C) a compound which generates an acid upon pyrolysis remains stable during storage. The composition is coated and heat treated to form a porous film which has flatness, uniformity, a low dielectric constant and a high mechanical strength so that it is best suited as an interlayer dielectric film in the fabrication of semiconductor devices.
摘要翻译：一种多孔成膜组合物，其包含（A）Mn至少为100的可固化有机硅树脂，（B）胶束形成性表面活性剂，和（C）在热解时产生酸的化合物在储存期间保持稳定。将组合物进行涂布和热处理以形成具有平坦度，均匀性，低介电常数和高机械强度的多孔膜，使得其最适合作为半导体器件制造中的层间绝缘膜。

27. 发明申请

US20050263908A1 Material for forming insulating film with low dielectric constant, low dielectric insulating film, method for forming low dielectric insulating film and semiconductor device 审中-公开
标题翻译：用于形成具有低介电常数的绝缘膜的材料，低介电绝缘膜，用于形成低介电绝缘膜的方法和半导体器件
公开(公告)号：US20050263908A1
公开(公告)日：2005-12-01
申请号：US11195638
申请日：2005-08-03
申请人： Hideo Nakagawa , Masaru Sasago
发明人： Hideo Nakagawa , Masaru Sasago
IPC分类号： C08L101/00 , C08K3/36 , C08L83/04 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , H01L21/8242 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/312 , H01L21/316 , H01L21/31695 , H01L23/5222 , H01L23/5329 , H01L24/03 , H01L24/05 , H01L24/48 , H01L2221/1047 , H01L2224/04042 , H01L2224/05093 , H01L2224/05556 , H01L2224/05599 , H01L2224/27416 , H01L2224/451 , H01L2224/48463 , H01L2224/85424 , H01L2224/85447 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01074 , H01L2924/12044 , H01L2224/45099 , H01L2924/00
摘要： A material for forming an insulating film with low dielectric constant of this invention is a solution including a fine particle principally composed of a silicon atom and an oxygen atom and having a large number of pores, a resin and a solvent.
摘要翻译：用于形成本发明的具有低介电常数的绝缘膜的材料是包括主要由硅原子和氧原子组成并且具有大量孔隙的细颗粒，树脂和溶剂的溶液。

28. 发明申请

US20050191860A1 Method for forming semiconductor device 审中-公开
标题翻译：半导体器件形成方法
公开(公告)号：US20050191860A1
公开(公告)日：2005-09-01
申请号：US11102445
申请日：2005-04-07
申请人： Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
发明人： Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
IPC分类号： H01L21/302 , H01L21/3105 , H01L21/312
CPC分类号： H01L21/02318 , H01L21/02118 , H01L21/02203 , H01L21/02282 , H01L21/31051 , H01L21/312 , H01L21/3122 , H01L21/3124
摘要： A method for forming a semiconductor device includes the steps of forming, on a substrate, a flowable film made of an insulating material with flowability; planarizing a top face of the flowable film by pressing the flowable film with a pressing member; forming a solidified film by annealing the flowable film at a first temperature with the pressing member pressed against the flowable film; and forming a burned film with a flat top face by burning the solidified film through annealing of the solidified film at a second temperature higher than the first temperature.
摘要翻译：一种形成半导体器件的方法包括以下步骤：在衬底上形成具有流动性的由绝缘材料制成的可流动膜; 通过用按压部件压制可流动膜来平坦化可流动膜的顶面; 通过使按压部件压靠在可流动膜上，在第一温度下使可流动膜退火而形成固化膜; 以及通过在比所述第一温度高的第二温度下通过使所述固化膜退火来燃烧所述固化膜来形成具有平坦顶面的燃烧膜。

29. 发明申请

US20050170269A1 Pattern formation method and method for forming semiconductor device 有权
标题翻译：用于形成半导体器件的图案形成方法和方法
公开(公告)号：US20050170269A1
公开(公告)日：2005-08-04
申请号：US11098371
申请日：2005-04-05
申请人： Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
发明人： Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
IPC分类号： G03C5/00 , G03F7/00 , G03F9/00 , H01L21/027 , H01L21/302 , H01L21/31 , H01L21/312 , H01L21/316 , H01L21/44 , H01L21/461 , H01L21/469 , H01L21/768
CPC分类号： H01L21/76801 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/76802 , H01L21/76813 , H01L21/76817
摘要： A pattern formation method includes the steps of forming a flowable film made of a material with flowability; forming at least one of a concave portion and a convex portion provided on a pressing face of a pressing member onto the flowable film by pressing the pressing member against the flowable film; forming a solidified film by solidifying the flowable film, onto which the at least one of a concave portion and a convex portion has been transferred, through annealing at a first temperature with the pressing member pressed against the flowable film; and forming a pattern made of the solidified film burnt by annealing at a second temperature higher than the first temperature.
摘要翻译：图案形成方法包括形成由具有流动性的材料制成的可流动膜的步骤; 通过将所述按压构件压靠在所述可流动膜上，将设置在所述挤压构件的按压面上的凹部和凸部中的至少一个形成在所述可流动膜上; 通过使按压部件压靠在所述可流动膜上的第一温度退火，使其中已经转移了所述至少一个凹部和凸部的所述可流动膜固化而形成固化膜; 以及在高于第一温度的第二温度下通过退火而形成由固化膜制成的图案。

30. 发明申请

US20050161824A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050161824A1
公开(公告)日：2005-07-28
申请号：US11082853
申请日：2005-03-18
申请人： Eiji Tamaoka , Hideo Nakagawa
发明人： Eiji Tamaoka , Hideo Nakagawa
IPC分类号： H01L23/52 , H01L21/3105 , H01L21/3205 , H01L21/768 , H01L21/822 , H01L23/522 , H01L27/04 , H01L23/48
CPC分类号： H01L21/76897 , H01L21/31053 , H01L21/76819 , H01L21/7682 , H01L23/522 , H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device of this invention includes a first interconnect pattern formed on a semiconductor substrate and a second interconnect pattern formed above the first interconnect pattern with an interlayer insulating film sandwiched therebetween. The first interconnect pattern includes a dummy pattern insulated from the first interconnect pattern, and the dummy pattern includes a plurality of fine patterns adjacent to each other and air gaps formed between the adjacent fine patterns.
摘要翻译：本发明的半导体器件包括形成在半导体衬底上的第一互连图案和形成在第一布线图案之上的第二布线图案，夹在其间的层间绝缘膜。第一互连图案包括与第一互连图案绝缘的虚设图案，并且虚设图案包括彼此相邻的多个精细图案以及形成在相邻精细图案之间的气隙。

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