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    • 24. 发明申请
    • APPARATUS AND METHOD OF PROCESSING SUBSTRATE
    • 装置和处理基板的方法
    • US20120067847A1
    • 2012-03-22
    • US13223555
    • 2011-09-01
    • Naoaki SakuraiHideaki Hirabayashi
    • Naoaki SakuraiHideaki Hirabayashi
    • C23F1/00C23F1/08
    • H01L21/67248H01L21/31111H01L21/6708H01L21/67109
    • According to one embodiment, an apparatus of processing a substrate includes a treatment chamber, a holder, a feed device, and a temperature control device. The holder is provided in the treatment chamber and is configured to rotatably hold the substrate. The feed device includes a nozzle configured to eject an etching solution to a surface of the substrate held by the holder. The temperature control device includes first and second devices, and a controller. The first device is configured to heat and/or cool an atmosphere inside the treatment chamber. The second device is configured to heat and/or cool the etching solution. The controller is configured to control operation of the first and second devices such that a temperature of the atmosphere is higher than that of the etching solution in the nozzle and that difference between the temperature of the atmosphere and that of the etching solution is maintained constant.
    • 根据一个实施例,处理基板的装置包括处理室,保持器,进给装置和温度控制装置。 保持器设置在处理室中并且构造成可旋转地保持基板。 进料装置包括喷嘴,该喷嘴构造成将蚀刻溶液喷射到由保持器保持的基板的表面上。 温度控制装置包括第一和第二装置以及控制器。 第一装置被配置为加热和/或冷却处理室内的气氛。 第二装置被配置为加热和/或冷却蚀刻溶液。 控制器被配置为控制第一和第二装置的操作,使得气氛的温度高于喷嘴中的蚀刻溶液的温度,并且气氛的温度与蚀刻溶液的温度之间的差保持恒定。