专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US08564098B2 Controlling the recombination rate in a bipolar semiconductor component 有权
标题翻译：控制双极半导体组件中的复合速率
公开(公告)号：US08564098B2
公开(公告)日：2013-10-22
申请号：US12718381
申请日：2010-03-05
申请人： Anton Mauder , Franz Hirler , Frank Pfirsch , Hans-Joachim Schulze
发明人： Anton Mauder , Franz Hirler , Frank Pfirsch , Hans-Joachim Schulze
IPC分类号： H01L21/02
CPC分类号： H01L29/739 , H03K17/0412
摘要： Disclosed is a method for controlling the recombination rate in the base region of a bipolar semiconductor component, and a bipolar semiconductor component.
摘要翻译：公开了一种用于控制双极半导体部件和双极型半导体部件的基极区域中的复合率的方法。

22. 发明申请

US20130249058A1 SEMICONDUCTOR COMPONENT COMPRISING A DOPANT REGION IN A SEMICONDUCTOR BODY AND A METHOD FOR PRODUCING A DOPANT REGION IN A SEMICONDUCTOR BODY 有权
标题翻译：包含半导体体中的掺杂区域的半导体元件和用于在半导体体内产生掺杂区域的方法
公开(公告)号：US20130249058A1
公开(公告)日：2013-09-26
申请号：US13613985
申请日：2012-09-13
申请人： Thomas Neidhart , Franz Josef Niedernostheide , Hans-Joachim Schulze , Werner Schustereder , Alexander Susiti
发明人： Thomas Neidhart , Franz Josef Niedernostheide , Hans-Joachim Schulze , Werner Schustereder , Alexander Susiti
IPC分类号： H01L29/36 , H01L21/265
CPC分类号： H01L29/167 , H01L21/265 , H01L21/26506 , H01L29/0603 , H01L29/32 , H01L29/36 , H01L29/7393 , H01L29/7801 , H01L29/861
摘要： A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×1017 cm−3 to 5×1017 cm−3 over the section L.
摘要翻译：半导体部件包括具有第一侧和与第一侧相对的第二侧的半导体本体。在半导体本体中，由氧络合物构成的掺杂剂形成掺杂剂区域。掺杂剂区域沿着沿着从第一侧到第二侧的方向具有至少10微米的长度的区段L延伸。掺杂剂区域在部分L上的氧浓度范围为1×1017cm-3至5×1017cm-3。

23. 发明授权

US08513730B2 Semiconductor component with vertical structures having a high aspect ratio and method 有权
标题翻译：具有高纵横比的垂直结构的半导体元件和方法
公开(公告)号：US08513730B2
公开(公告)日：2013-08-20
申请号：US12021736
申请日：2008-01-29
申请人： Anton Mauder , Helmut Strack , Armin Willmeroth , Hans-Joachim Schulze
发明人： Anton Mauder , Helmut Strack , Armin Willmeroth , Hans-Joachim Schulze
IPC分类号： H01L29/78 , H01L29/66
CPC分类号： H01L21/76224 , H01L29/0653 , H01L29/0878 , H01L29/161 , H01L29/165 , H01L29/407 , H01L29/66734 , H01L29/7803 , H01L29/7804 , H01L29/7806 , H01L29/7813 , H01L29/7831
摘要： A semiconductor component with vertical structures having a high aspect ratio and method. In one embodiment, a drift zone is arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone in a first direction. A dielectric layer is arranged between the drift zone and the drift control zone wherein the drift zone has a varying doping and/or a varying material composition at least in sections proceeding from the dielectric.
摘要翻译：具有高纵横比和垂直结构的半导体元件。在一个实施例中，漂移区布置在第一和第二组分区之间。漂移控制区在第一方向上布置成与漂移区相邻。电介质层布置在漂移区和漂移控制区之间，其中漂移区具有至少在从电介质进行的部分中的变化的掺杂和/或变化的材料组成。

24. 发明授权

US08466492B1 Semiconductor device with edge termination structure 有权
标题翻译：具有边缘端接结构的半导体器件
公开(公告)号：US08466492B1
公开(公告)日：2013-06-18
申请号：US13362005
申请日：2012-01-31
申请人： Anton Mauder , Hans-Joachim Schulze , Franz Hirler
发明人： Anton Mauder , Hans-Joachim Schulze , Franz Hirler
IPC分类号： H01L29/02
CPC分类号： H01L29/7813 , H01L29/0638 , H01L29/0649 , H01L29/0653 , H01L29/0661 , H01L29/0692 , H01L29/0696 , H01L29/0878 , H01L29/405 , H01L29/408 , H01L29/7397 , H01L29/7811 , H01L29/8611 , H01L29/872
摘要： A semiconductor device includes a semiconductor body including a first surface, an inner region and an edge region, a first doped device region of a first doping type in the inner region and the edge region, a second device region forming a device junction in the inner region with the first device region, and a plurality of at least two dielectric regions extending from the first surface into the semiconductor body. Two dielectric regions that are adjacent in a lateral direction of the semiconductor body are separated by a semiconductor mesa region. The semiconductor device further includes a resistive layer connected to the second device region and connected to at least one semiconductor mesa region.
摘要翻译：半导体器件包括半导体本体，其包括第一表面，内部区域和边缘区域，在内部区域和边缘区域中的第一掺杂型的第一掺杂器件区域，在内部形成器件结的第二器件区域具有第一器件区域的区域，以及从第一表面延伸到半导体本体中的多个至少两个电介质区域。在半导体本体的横向相邻的两个电介质区域被半导体台面区域隔开。半导体器件还包括连接到第二器件区并连接到至少一个半导体台面区的电阻层。

25. 发明申请

US20130092977A1 POWER SEMICONDUCTOR DIODE, IGBT, AND METHOD FOR MANUFACTURING THEREOF 有权
标题翻译：功率半导体二极管，IGBT及其制造方法
公开(公告)号：US20130092977A1
公开(公告)日：2013-04-18
申请号：US13274411
申请日：2011-10-17
申请人： Holger Huesken , Anton Mauder , Hans-Joachim Schulze , Wolfgang Roesner
发明人： Holger Huesken , Anton Mauder , Hans-Joachim Schulze , Wolfgang Roesner
IPC分类号： H01L29/739 , H01L21/331 , H01L29/73
CPC分类号： H01L29/0688 , H01L29/0619 , H01L29/0692 , H01L29/0696 , H01L29/08 , H01L29/1608 , H01L29/161 , H01L29/2003 , H01L29/22 , H01L29/36 , H01L29/66128 , H01L29/66143 , H01L29/66325 , H01L29/7393 , H01L29/7395 , H01L29/861 , H01L29/8611 , H01L29/872
摘要： A power semiconductor diode is provided. The power semiconductor diode includes a semiconductor substrate having a first emitter region of a first conductivity type, a second emitter region of a second conductivity type, and a drift region of the first conductivity type arranged between the first emitter region and the second emitter region. The drift region forms a pn-junction with the second emitter region. A first emitter metallization is in contact with the first emitter region. The first emitter region includes a first doping region of the first conductivity type and a second doping region of the first conductivity type. The first doping region forms an ohmic contact with the first emitter metallization, and the second doping region forms a non-ohmic contact with the first emitter metallization. A second emitter metallization is in contact with the second emitter region.
摘要翻译：提供功率半导体二极管。功率半导体二极管包括具有第一导电类型的第一发射极区域，第二导电类型的第二发射极区域和布置在第一发射极区域和第二发射极区域之间的第一导电类型的漂移区域的半导体衬底。漂移区域与第二发射极区域形成pn结。第一发射极金属化与第一发射极区域接触。第一发射极区域包括第一导电类型的第一掺杂区域和第一导电类型的第二掺杂区域。第一掺杂区与第一发射极金属化形成欧姆接触，第二掺杂区与第一发射极金属化形成非欧姆接触。第二发射极金属化与第二发射极区域接触。

26. 发明申请

US20130056731A1 Semiconductor Device and Method for Manufacturing the Semiconductor Device 有权
标题翻译：用于制造半导体器件的半导体器件和方法
公开(公告)号：US20130056731A1
公开(公告)日：2013-03-07
申请号：US13227206
申请日：2011-09-07
申请人： Anton Mauder , Franz Hirler , Hans Peter Felsl , Hans-Joachim Schulze
发明人： Anton Mauder , Franz Hirler , Hans Peter Felsl , Hans-Joachim Schulze
IPC分类号： H01L29/861 , H01L21/331 , H01L29/739
CPC分类号： H01L21/02576 , H01L21/302 , H01L29/0626 , H01L29/0692 , H01L29/1095 , H01L29/36 , H01L29/4236 , H01L29/6609 , H01L29/66136 , H01L29/7803 , H01L29/7813 , H01L29/861
摘要： A semiconductor device includes a semiconductor diode. The semiconductor diode includes a drift region and a first semiconductor region of a first conductivity type formed in or on the drift region. The first semiconductor region is electrically coupled to a first terminal via a first surface of a semiconductor body. The semiconductor diode includes a channel region of a second conductivity type electrically coupled to the first terminal, wherein a bottom of the channel region adjoins the first semiconductor region. A first side of the channel region adjoins the first semiconductor region.
摘要翻译：半导体器件包括半导体二极管。半导体二极管包括形成在漂移区中或漂移区上的漂移区和第一导电类型的第一半导体区。第一半导体区域经由半导体本体的第一表面电耦合到第一端子。半导体二极管包括电耦合到第一端子的第二导电类型的沟道区，其中沟道区的底部与第一半导体区相邻。沟道区的第一侧邻接第一半导体区。

27. 发明申请

US20130037906A1 Semiconductor Device and a Method for Forming a Semiconductor Device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20130037906A1
公开(公告)日：2013-02-14
申请号：US13205759
申请日：2011-08-09
申请人： Franz Hirler , Anton Mauder , Hans-Joachim Schulze
发明人： Franz Hirler , Anton Mauder , Hans-Joachim Schulze
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L29/0649 , H01L21/761 , H01L29/045 , H01L29/0653 , H01L29/0661 , H01L29/0692 , H01L29/0696 , H01L29/407 , H01L29/66136 , H01L29/66734 , H01L29/7397 , H01L29/7803 , H01L29/7811 , H01L29/7813 , H01L29/8613 , H01L29/868
摘要： A semiconductor device having a semiconductor die is provided. The semiconductor die includes a main horizontal surface, an outer edge, an active area, and a peripheral area. The peripheral area includes a dielectric structure surrounding the active area and extending from the main horizontal surface into the semiconductor die. The dielectric structure includes, in a horizontal cross-section, at least one substantially L-shaped portion that is inclined against the outer edge. Further, a method for forming a semiconductor device is provided.
摘要翻译：提供具有半导体管芯的半导体器件。半导体管芯包括主水平表面，外边缘，有效区域和周边区域。周边区域包括围绕有源区域并从主水平表面延伸到半导体管芯中的电介质结构。电介质结构在水平截面中包括至少一个相对于外边缘倾斜的大致L形的部分。此外，提供了一种用于形成半导体器件的方法。

28. 发明授权

US08361893B2 Semiconductor device and substrate with chalcogen doped region 有权
标题翻译：半导体器件和具有硫属元素掺杂区的衬底
公开(公告)号：US08361893B2
公开(公告)日：2013-01-29
申请号：US13075475
申请日：2011-03-30
申请人： Gerhard Schmidt , Hans-Joachim Schulze , Bernd Kolbesen
发明人： Gerhard Schmidt , Hans-Joachim Schulze , Bernd Kolbesen
IPC分类号： H01L21/265
CPC分类号： H01L29/0607 , H01L21/223 , H01L21/2253 , H01L21/26506 , H01L21/26513 , H01L29/0843 , H01L29/0847 , H01L29/0878 , H01L29/1016 , H01L29/167 , H01L29/66136 , H01L29/66348 , H01L29/66363 , H01L29/66712 , H01L29/66909 , H01L29/7397 , H01L29/7802
摘要： An undoped semiconductor substrate is doped by applying stress at a side of the undoped semiconductor substrate to release self interstitials in the substrate and implanting chalcogen atoms into the side of the substrate. The substrate is annealed to form a first semiconductor region containing the chalcogen atoms and a second semiconductor region devoid of the chalcogen atoms. The first semiconductor region has a doping concentration higher than the doping concentration of the second semiconductor region. The indiffusion of chalcogen atoms into a semiconductor material in the presence of self interstitials can also be used to form field stop regions in power semiconductor devices.
摘要翻译：通过在未掺杂的半导体衬底的一侧施加应力来掺杂未掺杂的半导体衬底，以释放衬底中的自间隙并将硫属原子注入到衬底的侧面。将衬底退火以形成含有硫属原子的第一半导体区域和没有硫属原子的第二半导体区域。第一半导体区域的掺杂浓度高于第二半导体区域的掺杂浓度。在存在自填隙的情况下将硫属原子向半导体材料中的扩散也可用于在功率半导体器件中形成场停止区。

29. 发明申请

US20130001674A1 SEMICONDUCTOR DEVICE WITH VOLTAGE COMPENSATION STRUCTURE 有权
标题翻译：具有电压补偿结构的半导体器件
公开(公告)号：US20130001674A1
公开(公告)日：2013-01-03
申请号：US13174319
申请日：2011-06-30
申请人： Hans-Joachim Schulze , Hans Weber
发明人： Hans-Joachim Schulze , Hans Weber
IPC分类号： H01L29/78 , H01L29/06 , H01L21/22
CPC分类号： H01L29/7827 , H01L29/0634 , H01L29/0653 , H01L29/1054 , H01L29/165 , H01L29/167 , H01L29/36 , H01L29/66712 , H01L29/73 , H01L29/7395 , H01L29/7802 , H01L29/808 , H01L29/872
摘要： A semiconductor device with a high voltage compensation component is manufactured by etching a trench into an epitaxial semiconductor material doped with n-type dopant atoms and p-type dopant atoms and disposing a first semiconductor or insulating material along one or more sidewalls of the trench. The first semiconductor or insulating material has a dopant diffusion constant which is at least 2× different for the n-type dopant atoms than the p-type dopant atoms. A second semiconductor material is disposed in the trench along the first semiconductor or insulating material. The second semiconductor material has a different dopant diffusion constant than the first semiconductor or insulating material. More n-type dopant atoms or p-type dopant atoms are diffused from the epitaxial semiconductor material through the first semiconductor or insulating material into the second semiconductor material than the other type of dopant atoms so that a lateral charge separation occurs between the second semiconductor material and the epitaxial semiconductor material.
摘要翻译：通过将沟槽蚀刻成掺杂有n型掺杂剂原子和p型掺杂剂原子的外延半导体材料并且沿沟槽的一个或多个侧壁设置第一半导体或绝缘材料来制造具有高电压补偿分量的半导体器件。第一半导体或绝缘材料具有与p型掺杂剂原子相比对于n型掺杂剂原子至少为2×不同的掺杂剂扩散常数。第二半导体材料沿着第一半导体或绝缘材料设置在沟槽中。第二半导体材料具有与第一半导体或绝缘材料不同的掺杂剂扩散常数。比其他类型的掺杂剂原子，更多的n型掺杂剂原子或p型掺杂剂原子从外延半导体材料通过第一半导体或绝缘材料扩散到第二半导体材料中，使得在第二半导体材料和外延半导体材料。

30. 发明申请

US20130001642A1 METHOD INCLUDING PRODUCING A MONOCRYSTALLINE LAYER 有权
标题翻译：包括生产单晶层的方法
公开(公告)号：US20130001642A1
公开(公告)日：2013-01-03
申请号：US13610206
申请日：2012-09-11
申请人： Franz Hirler , Hans-Joachim Schulze
发明人： Franz Hirler , Hans-Joachim Schulze
IPC分类号： H01L29/04
CPC分类号： H01L21/02667 , C30B11/14 , C30B19/12 , C30B29/06 , C30B29/52 , C30B31/22 , H01L21/02532 , H01L21/02686
摘要： A method including producing a monocrystalline layer is disclosed. A first lattice constant on a monocrystalline substrate has a second lattice constant at least in a near-surface region. The second lattice constant is different from the first lattice constant. Lattice matching atoms are implanted into the near-surface region. The near-surface region is momentarily melted. A layer is epitaxially deposited on the near-surface region that has solidified in monocrystalline fashion.
摘要翻译：公开了一种制造单晶层的方法。单晶衬底上的第一晶格常数至少在近表面区域具有第二晶格常数。第二晶格常数与第一晶格常数不同。将晶格匹配原子注入近表面区域。近表面区域瞬间熔化。外延沉积在已经以单晶固化的近表面区域上的层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式