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    • 30. 发明申请
    • Interlayer wiring of semiconductor device using carbon nanotube and method of manufacturing the same
    • 使用碳纳米管的半导体器件的层间布线及其制造方法
    • US20080211101A1
    • 2008-09-04
    • US11785588
    • 2007-04-18
    • In-Taek HanHa-Jin Kim
    • In-Taek HanHa-Jin Kim
    • H01L23/48H01L21/44
    • H01L21/76885B82Y10/00B82Y30/00H01L23/5226H01L23/53276H01L2221/1094H01L2924/0002H01L2924/00
    • Provided is an interlayer wiring structure of a semiconductor device using carbon nanotubes, and a method of manufacturing the interlayer wiring structure. The interlayer wiring structure is a carbon nanotube bundle that connects a first electrode to a second electrode. The carbon nanotube bundle includes a plurality of carbon nanotubes grown from a catalyst layer that is formed on a first electrode. The carbon nanotube bundle is made in a manner that a portion of the carbon nanotube bundle close to the second electrode has higher density of carbon nanotubes than another portion of the carbon nanotube bundle close to the first electrode. The carbon nanotube bundle is surrounded by an interlayer dielectric. In one embodiment of a method of manufacturing the carbon nanotube interlayer wire, liquid droplets are distributed between the carbon nanotubes to induce surface tension between the carbon nanotubes. The surface tension makes the carbon nanotube bundle maintain higher density of carbon nanotubes in a portion close to the second electrode.
    • 提供了使用碳纳米管的半导体器件的层间布线结构以及制造层间布线结构的方法。 层间布线结构是将第一电极连接到第二电极的碳纳米管束。 碳纳米管束包括从形成在第一电极上的催化剂层生长的多个碳纳米管。 碳纳米管束的制造方式是使碳纳米管束靠近第二电极的部分比碳纳米管束的靠近第一电极的另一部分具有更高的碳纳米管密度。 碳纳米管束被层间电介质包围。 在制造碳纳米管夹层线的方法的一个实施例中,液滴分布在碳纳米管之间以引起碳纳米管之间的表面张力。 表面张力使得碳纳米管束在靠近第二电极的部分保持较高的碳纳米管密度。