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    • 23. 发明授权
    • Method for fabricating semiconductor device
    • 制造半导体器件的方法
    • US08324109B2
    • 2012-12-04
    • US12642496
    • 2009-12-18
    • Tae-Han KimDong-Hyun Kim
    • Tae-Han KimDong-Hyun Kim
    • H01L21/302H01L21/461
    • H01L21/28247H01L21/28061H01L29/4941
    • A method for fabricating a semiconductor device includes forming a gate insulation layer over a substrate, sequentially forming a silicon layer and a metal layer over the gate insulation layer, performing a first gate etching process to etch the metal layer using a gate hard mask layer, formed on the metal layer, as an etch barrier, and then partially etch the silicon layer, thereby forming a first pattern, performing a second gate etching process to partially etch the silicon layer, thereby forming an undercut beneath the metal layer, forming a capping layer on both sidewalls of the first pattern including the undercut, performing a third gate etching process to etch the silicon layer to expose the gate insulation layer using the gate hard mask layer and the capping layer as an etch barrier, thereby forming a second pattern, and performing a gate re-oxidation process.
    • 一种制造半导体器件的方法包括在衬底上形成栅极绝缘层,在栅极绝缘层上依次形成硅层和金属层,执行第一栅极蚀刻工艺以使用栅极硬掩模层来蚀刻金属层, 形成在金属层上,作为蚀刻阻挡层,然后部分地蚀刻硅层,由此形成第一图案,执行第二栅极蚀刻工艺以部分蚀刻硅层,从而在金属层下方形成底切,形成封盖 在包括底切的第一图案的两个侧壁上,执行第三栅极蚀刻工艺以蚀刻硅层,以使用栅极硬掩模层和封盖层作为蚀刻阻挡层来露出栅极绝缘层,从而形成第二图案, 并进行栅极再氧化处理。
    • 24. 发明申请
    • Semiconductor Device and Method of Manufacturing the Same
    • 半导体器件及其制造方法
    • US20120252187A1
    • 2012-10-04
    • US13422487
    • 2012-03-16
    • Gyu-Hwan OhDong-Hyun KimKyung-Min ChungDong-Hyun Im
    • Gyu-Hwan OhDong-Hyun KimKyung-Min ChungDong-Hyun Im
    • H01L21/329H01L21/283H01L21/02
    • H01L27/1021H01L27/2409H01L27/2463H01L45/06H01L45/1233H01L45/1253H01L45/16H01L45/1683
    • A method of manufacturing the semiconductor device includes sequentially forming first to third mold layer patterns on a substrate and spaced apart from each other , forming a first semiconductor pattern between the first mold layer pattern and the second mold layer pattern, and a second semiconductor pattern between the second mold layer pattern and the third mold layer pattern, forming a first trench between the first mold layer pattern and the third mold layer pattern by removing a portion of the second mold layer pattern and portions of the first and second semiconductor patterns, depositing a material for a lower electrode conformally along side and bottom surfaces of the first trench, and forming first and second lower electrodes separated from each other on the first and second semiconductor patterns, respectively, by removing a portion of the material for a lower electrode positioned on the second mold layer pattern.
    • 制造半导体器件的方法包括在基片上依次形成第一至第三模层图案并彼此分开,在第一模层图案和第二模层图案之间形成第一半导体图案,以及第二半导体图案, 第二模层图案和第三模层图案,通过去除第二模层图案的一部分和第一和第二半导体图案的部分,在第一模层图案和第三模层图案之间形成第一沟槽, 用于下电极的材料沿着第一沟槽的侧表面和底表面共形地形成,并且通过移除位于第一和第二半导体图案上的下电极的材料的一部分,分别形成在第一和第二半导体图案上彼此分离的第一和第二下电极 第二模层图案。
    • 26. 发明申请
    • HEATER BLOCK FOR A RAPID THERMAL PROCESSING APPARATUS IN WHICH A COOLING WATER FLOW IS DIVIDED INTO AN UPPER LAYER AND A LOWER LAYER
    • 用于快速热处理装置的加热器块,其中冷却水流分为上层和下层
    • US20120213499A1
    • 2012-08-23
    • US13391431
    • 2010-08-04
    • Jang Woo ShimSung Chul KimDong Hyun KimHyo Young Jeon
    • Jang Woo ShimSung Chul KimDong Hyun KimHyo Young Jeon
    • F27D11/12F28D15/00
    • H01L21/67109F27B17/0025H01L21/67115
    • The present invention relates to a heater block for a rapid thermal processing apparatus, wherein a plurality of lamp pockets (21) for accommodating heating lamps are arranged, and cooling water inlet ports (111a, 111b) and cooling water outlet ports (112a, 112b) are arranged such that the lamp pockets (21) are cooled by the flow of the cooling water fed via the cooling water inlet ports (111a, 111b) and discharged via the cooling water outlet ports (112a, 112b). In detail, the cooling water inlet ports (111a, 111b) and the cooling water outlet ports (112a, 112b) are separately arranged into an upper layer and a lower layer, such that the flow of the cooling water fed via the cooling water inlet ports (111a, 111b) and discharged via the cooling water outlet ports (112a, 112b) is divided into an upper layer and a lower layer. Preferably, cooling water dispersion means (140) are installed at entries of the cooling water inlet ports (111a, 111b) so as to disperse the cooling water in a lateral direction. According to the present invention, the cooling water flows separately in the upper layer and the lower layer to improve cooling efficiency, and particularly, lower portions of the lamp pockets, in which heat discharged by the heating lamps is concentrated, can be maximally cooled. In addition, the cooling water dispersion means prevents the formation of a dead zone, thereby uniformly cooling the entirety of the heater block.
    • 本发明涉及一种用于快速热处理设备的加热器块,其中布置有多个用于容纳加热灯的灯泡(21),冷却水入口(111a,111b)和冷却水出口(112a,112b) )被布置成使得灯泡(21)通过经由冷却水入口(111a,111b)供给的冷却水的流动被冷却,并经由冷却水出口(112a,112b)排出。 详细地说,冷却水入口(111a,111b)和冷却水出口(112a,112b)分别设置在上层和下层中,使得经由冷却水入口 经由冷却水出口(112a,112b)排出的端口(111a,111b)分为上层和下层。 优选地,冷却水分散装置(140)安装在冷却水入口(111a,111b)的入口处,以便沿横向分散冷却水。 根据本发明,冷却水分别在上层和下层中流动,以提高冷却效率,特别是可以最大限度地冷却由加热灯排出的热量的灯泡的下部。 此外,冷却水分散装置防止形成死区,从而均匀地冷却整个加热器块。
    • 27. 发明申请
    • METHOD FOR MANUFACTURING MULTI-DISPLAY DEVICE
    • 制造多显示器件的方法
    • US20120204404A1
    • 2012-08-16
    • US13390334
    • 2010-08-16
    • Yong Beom KimDong Hyun Kim
    • Yong Beom KimDong Hyun Kim
    • B23P11/00
    • G02F1/13336G02F1/133528Y10T29/49826
    • A method for manufacturing a multi-display device by arranging adjacently a plurality of liquid crystal display panels includes: cutting the liquid crystal display panels along at least one edge to remove portions of the liquid crystal display panels respectively; arranging and fixing the liquid crystal display panels, in a state that a portion of the liquid crystal display panels is turned over, such that the cut edges face one another; removing a polarizer attached to a side of the liquid crystal display panel which will be turned over; and attaching a polarizer, which is of the same kind as a polarizer originally attached to the opposite side, to the side of the liquid crystal display panel from which the polarizer has been removed.
    • 通过相邻设置多个液晶显示面板来制造多显示器件的方法包括:沿着至少一个边缘切割液晶显示面板以分别去除部分液晶显示面板; 在液晶显示面板的一部分翻转的状态下,使切割边缘彼此面对,来配置和固定液晶显示面板; 去除附接到液晶显示面板侧面的偏光镜; 并且将与原来安装在相反侧的起偏器相同种类的偏振片安装在已经从中偏振器被去除的液晶显示面板的一侧。
    • 30. 发明申请
    • METHOD FOR CUTTING LIQUID CRYSTAL PANEL AND METHOD FOR MANUFACTURING LIQUID CRYSTAL PANEL USING THE SAME
    • 切割液晶面板的方法及使用其制造液晶面板的方法
    • US20120083180A1
    • 2012-04-05
    • US13377674
    • 2010-06-09
    • Yong Beom KimDong Hyun Kim
    • Yong Beom KimDong Hyun Kim
    • H01J9/26H01J9/00
    • C03B33/076G02F1/133351
    • The present invention relates to a method for cutting a liquid crystal display panel and a method for manufacturing a liquid crystal display panel having a desired size using the same. In a method for cutting a liquid crystal display panel which includes an upper panel to which a color filter is formed and a lower filter on which a thin film transistor is formed, the upper panel and the lower panel are respectively cut in such a way that a cut edge of the upper panel is outwardly protruded from a cut edge of the lower panel so that a step is formed at a cut surface between the upper panel and the lower panel. Since the cut edge of the upper panel is upwardly protruded from the cut edge of the lower panel, electrodes, signal lines, thin film transistors of the lower panel can be prevented from being damaged by the contact with the dispenser or by the pressure of the sprayed sealant while the sealant is formed after the cutting.
    • 本发明涉及一种液晶显示面板的切割方法及使用该液晶显示面板的期望尺寸的液晶显示面板的制造方法。 在一种用于切割液晶显示面板的方法中,该液晶显示面板包括形成滤色器的上面板和形成有薄膜晶体管的下部滤光器,上面板和下面板分别被切割成 上板的切割边缘从下板的切割边缘向外突出,使得在上板和下板之间的切割表面处形成台阶。 由于上板的切割边缘从下板的切割边缘向上突出,因此可以防止下面板​​的电极,信号线,薄膜晶体管因与分配器的接触而受到损坏, 在切割后形成密封剂时喷涂密封剂。