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21. 发明授权

US08218356B2 Spin-torque memory with unidirectional write scheme 有权
标题翻译：具有单向写入方案的自旋力矩存储器
公开(公告)号：US08218356B2
公开(公告)日：2012-07-10
申请号：US12795020
申请日：2010-06-07
申请人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
发明人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , B82Y25/00 , G01R33/093 , G01R33/1284 , G06T11/001 , G11C11/161 , G11C11/1675
摘要： Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.
摘要翻译：具有钉扎层，两个自由层和靠近至少一个自由层的电流阻挡绝缘层的自旋扭矩磁存储元件。存储元件的电阻状态（例如，低电阻或高电阻）通过在一个方向上通过元件的电流来改变。换句话说，为了从低电阻变为高电阻，电流的方向与从高电阻变为低电阻相同。这些元素具有单向写入方案。

22. 发明授权

US08188558B2 ST-RAM magnetic element configurations to reduce switching current 有权
标题翻译： ST-RAM磁性元件配置，以减少开关电流
公开(公告)号：US08188558B2
公开(公告)日：2012-05-29
申请号：US13169449
申请日：2011-06-27
申请人： Dexin Wang , Dimitar V. Dimitrov , Song S. Xue , Insik Jin
发明人： Dexin Wang , Dimitar V. Dimitrov , Song S. Xue , Insik Jin
IPC分类号： H01L43/00 , G11B5/33
CPC分类号： H01F10/3254 , B82Y25/00 , H01F10/3259 , H01F10/3272 , H01F10/3286
摘要： In order to increase an efficiency of spin transfer and thereby reduce the required switching current, a current perpendicular to plane (CPP) magnetic element for a memory device includes either one or both of a free magnetic layer, which has an electronically reflective surface, and a permanent magnet layer, which has perpendicular anisotropy to bias the free magnetic layer.
摘要翻译：为了提高自旋转移的效率，从而降低所需的开关电流，与存储器件的平面（CPP）磁性元件垂直的电流包括具有电子反射表面的自由磁性层中的一个或两个，以及永磁体层具有垂直各向异性以偏置自由磁性层。

23. 发明授权

US08150582B2 Systems and methods for decoupling steering rack force disturbances in electric steering 有权
标题翻译：在电动转向中解耦转向齿条力干扰的系统和方法
公开(公告)号：US08150582B2
公开(公告)日：2012-04-03
申请号：US12426463
申请日：2009-04-20
申请人： Michael Alan Blommer , Paul George Sanders , Hongtei Eric Tseng , Dexin Wang
发明人： Michael Alan Blommer , Paul George Sanders , Hongtei Eric Tseng , Dexin Wang
IPC分类号： G06F19/00
CPC分类号： B62D5/0472 , B62D6/008
摘要： A system for decoupling steering rack force disturbances in electric steering may comprise a steering wheel angle sensor, a yaw rate sensor, a lateral acceleration sensor, and a steering torque sensor. The system may also comprise a tire force generator configured to receive signals from the steering wheel angle sensor, the yaw rate sensor, and the lateral acceleration sensor and send a reference rack force to a controller. The system may further comprise a rack force observer configured to receive signals from the steering torque sensor and send an estimated rack force to the controller, wherein the controller is configured to receive signals from the tire force generator and the rack force observer, compare the estimated rack force with the reference rack force to determine a rack force disturbance, and adjust an auxiliary torque based on the rack force disturbance.
摘要翻译：用于解耦电动转向中的转向齿条力干扰的系统可以包括方向盘角度传感器，偏航角速度传感器，横向加速度传感器和转向扭矩传感器。系统还可以包括轮胎力发生器，其构造成从方向盘角度传感器，横摆率传感器和横向加速度传感器接收信号，并向控制器发送参考齿条力。系统还可以包括齿轮力观察器，其被配置为从转向扭矩传感器接收信号并向控制器发送估计的齿条力，其中控制器被配置为从轮胎力发生器和齿条力观察器接收信号，齿条力与参考齿条力确定齿条力的干扰，并根据齿条力的扰动调整辅助扭矩。

24. 发明授权

US08134138B2 Programmable metallization memory cell with planarized silver electrode 有权
标题翻译：具有平面化银电极的可编程金属化存储单元
公开(公告)号：US08134138B2
公开(公告)日：2012-03-13
申请号：US12362532
申请日：2009-01-30
申请人： Tian Wei , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar Velikov Dimitrov
发明人： Tian Wei , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar Velikov Dimitrov
IPC分类号： H01L29/02
CPC分类号： B82Y10/00 , G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/16
摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.
摘要翻译：公开了具有平面化银电极的可编程金属化存储单元及其形成方法。可编程金属化存储单元包括第一金属触点和第二金属触点，离子导体固体电解质材料位于第一金属触点和第二金属触点之间，并且银合金掺杂电极将离子导体固体电解质材料与第一金属接触或第二金属接触，或银掺杂电极将离子导体固体电解质材料与第一金属接触分离。银电极包括银层和将银层与第一金属触点分开的金属种子层。

25. 发明授权

US08097902B2 Programmable metallization memory cells via selective channel forming 有权
标题翻译：可编程金属化存储单元通过选择性通道形成
公开(公告)号：US08097902B2
公开(公告)日：2012-01-17
申请号：US12170519
申请日：2008-07-10
申请人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
发明人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
IPC分类号： H01L29/66
CPC分类号： H01L45/085 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/141 , H01L45/143 , H01L45/1625 , H01L45/1633 , H01L45/1658 , H01L45/1675
摘要： A programmable metallization memory cell that has an apertured insulating layer comprising at least one aperture therethrough positioned between the active electrode and the inert electrode. Superionic clusters are present within the at least one aperture, and may extend past the at least one aperture. Also, methods for making a programmable metallization memory cell are disclosed.
摘要翻译：一种可编程金属化存储单元，其具有有孔绝缘层，该绝缘层包括位于有源电极和惰性电极之间的穿过其中的至少一个孔。超离子簇存在于至少一个孔内，并且可以延伸经过至少一个孔。另外，公开了制造可编程金属化存储单元的方法。

26. 发明授权

US08089132B2 Magnetic memory with phonon glass electron crystal material 有权
标题翻译：具有声子玻璃电子晶体材料的磁记忆体
公开(公告)号：US08089132B2
公开(公告)日：2012-01-03
申请号：US12423119
申请日：2009-04-14
申请人： Yuankai Zheng , Haiwen Xi , Dimitar V. Dimitrov , Dexin Wang
发明人： Yuankai Zheng , Haiwen Xi , Dimitar V. Dimitrov , Dexin Wang
IPC分类号： G11C11/02
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.
摘要翻译：磁存储器单元包括分隔自由磁性元件和参考磁性元件的隧道势垒。第一声子玻璃电子晶体层设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧。第二声子玻璃电子晶体层也设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧上，以在自由磁性元件和参考磁性元件上提供珀尔帖效应。

27. 发明授权

US07999336B2 ST-RAM magnetic element configurations to reduce switching current 有权
标题翻译： ST-RAM磁性元件配置，以减少开关电流
公开(公告)号：US07999336B2
公开(公告)日：2011-08-16
申请号：US12108706
申请日：2008-04-24
申请人： Dexin Wang , Dimitar V. Dimitrov , Song S. Xue , Insik Jin
发明人： Dexin Wang , Dimitar V. Dimitrov , Song S. Xue , Insik Jin
IPC分类号： H01L43/00 , G11B5/33
CPC分类号： H01F10/3254 , B82Y25/00 , H01F10/3259 , H01F10/3272 , H01F10/3286
摘要： In order to increase an efficiency of spin transfer and thereby reduce the required switching current, a current perpendicular to plane (CPP) magnetic element for a memory device includes either one or both of a free magnetic layer, which has an electronically reflective surface, and a permanent magnet layer, which has perpendicular anisotropy to bias the free magnetic layer.
摘要翻译：为了提高自旋转移的效率，从而降低所需的开关电流，与存储器件的平面（CPP）磁性元件垂直的电流包括具有电子反射表面的自由磁性层中的一个或两个，以及永磁体层具有垂直各向异性以偏置自由磁性层。

28. 发明授权

US07826256B2 STRAM with compensation element 有权
标题翻译： STRAM与补偿元素
公开(公告)号：US07826256B2
公开(公告)日：2010-11-02
申请号：US12239882
申请日：2008-09-29
申请人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Wei Tian , Xiaobin Wang , Xiaohua Lou
发明人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Wei Tian , Xiaobin Wang , Xiaohua Lou
IPC分类号： G11C7/00
CPC分类号： G11C11/161
摘要： Spin-transfer torque memory having a compensation element is disclosed. The spin-transfer torque memory unit includes a synthetic antiferromagnetic reference element, a synthetic antiferromagnetic compensation element, a free magnetic layer between the synthetic antiferromagnetic reference element and the synthetic antiferromagnetic compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the synthetic antiferromagnetic reference element. The free magnetic layer has a saturation moment value greater than 1100 emu/cc.
摘要翻译：公开了具有补偿元件的自转转矩存储器。自旋转移转矩存储单元包括合成反铁磁参考元件，合成反铁磁补偿元件，合成反铁磁参考元件和合成反铁磁补偿元件之间的自由磁性层，以及将绝缘和非磁性隧道势垒层分离来自合成反铁磁参考元件的自由磁性层。自由磁性层具有大于1100emu / cc的饱和力矩值。

29. 发明申请

US20100246245A1 SPIN-TORQUE MEMORY WITH UNIDIRECTIONAL WRITE SCHEME 有权
标题翻译：具有单向写入方案的旋转扭矩记忆
公开(公告)号：US20100246245A1
公开(公告)日：2010-09-30
申请号：US12795020
申请日：2010-06-07
申请人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
发明人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： G11C11/16 , B82Y25/00 , G01R33/093 , G01R33/1284 , G06T11/001 , G11C11/161 , G11C11/1675
摘要： Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.
摘要翻译：具有钉扎层，两个自由层和靠近至少一个自由层的电流阻挡绝缘层的自旋扭矩磁存储元件。存储元件的电阻状态（例如，低电阻或高电阻）通过在一个方向上通过元件的电流来改变。换句话说，为了从低电阻变为高电阻，电流的方向与从高电阻变为低电阻相同。这些元素具有单向写入方案。

30. 发明申请

US20100238712A1 VARIABLE WRITE AND READ METHODS FOR RESISTIVE RANDOM ACCESS MEMORY 有权
标题翻译：用于电阻随机访问存储器的可变写入和读取方法
公开(公告)号：US20100238712A1
公开(公告)日：2010-09-23
申请号：US12794009
申请日：2010-06-04
申请人： Haiwen Xi , Hongyue Liu , Xiaobin Wang , Yong Lu , Yiran Chen , Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Hai Li
发明人： Haiwen Xi , Hongyue Liu , Xiaobin Wang , Yong Lu , Yiran Chen , Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Hai Li
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C13/0007 , G11C13/004 , G11C13/0064 , G11C13/0069 , G11C2013/0057
摘要： Variable write and read methods for resistance random access memory (RRAM) are disclosed. The methods include initializing a write sequence and verifying the resistance state of the RRAM cell. If a write pulse is needed, then two or more write pulses are applied through the RRAM cell to write the desired data state to the RRAM cell. Each subsequent write pulse has substantially the same or greater write pulse duration. Subsequent write pulses are applied to the RRAM cell until the RRAM cell is in the desired data state or until a predetermined number of write pulses have been applied to the RRAM cell. A read method is also disclosed where subsequent read pulses are applied through the RRAM cell until the read is successful or until a predetermined number of read pulses have been applied to the RRAM cell.
摘要翻译：公开了用于电阻随机存取存储器（RRAM）的可变写和读方法。这些方法包括初始化写入序列并验证RRAM单元的电阻状态。如果需要写入脉冲，则通过RRAM单元施加两个或更多写入脉冲，以将期望的数据状态写入RRAM单元。每个后续写入脉冲具有基本上相同或更大的写入脉冲持续时间。随后的写入脉冲被施加到RRAM单元，直到RRAM单元处于期望的数据状态，或直到预定数量的写入脉冲已经被施加到RRAM单元为止。还公开了一种读取方法，其中随后的读取脉冲通过RRAM单元被施加，直到读取成功或直到预定数量的读取脉冲已经被应用于RRAM单元为止。

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