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21. 发明授权

US07928471B2 Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor 有权
标题翻译：硅或硅锗衬底上的III族氮化物生长及其方法和装置
公开(公告)号：US07928471B2
公开(公告)日：2011-04-19
申请号：US11566288
申请日：2006-12-04
申请人： Michael A. Mastro , Charles R. Eddy, Jr. , Shahzad Akbar
发明人： Michael A. Mastro , Charles R. Eddy, Jr. , Shahzad Akbar
IPC分类号： H01L31/102 , H01L33/00 , H01S5/00
CPC分类号： H01L31/078 , H01L31/1812 , H01L31/184 , Y02E10/544
摘要： A structure including a Si1-xGex substrate and a distributed Bragg reflector layer disposed directly onto the substrate. The distributed Bragg reflector layer includes a repeating pattern that includes at least one aluminum nitride layer and a second layer having the general formula AlyGa1-yN. Another aspect of the present invention is various devices including this structure. Another aspect of the present invention is directed to a method of forming such a structure comprising providing a Si1-xGex substrate and depositing a distributed Bragg reflector layer directly onto the substrate. Another aspect of the present invention is directed to a photodetector or photovoltaic cell device, including a Si1-xGex substrate device, a group III-nitride device and contacts to provide a conductive path for a current generated across at least one of the Si1-xGex substrate device and the group III-nitride device upon incident light.
摘要翻译：包括Si1-xGex衬底和直接设置在衬底上的分布式布拉格反射层的结构。分布布拉格反射层包括重复图案，其包括至少一个氮化铝层和具有通式AllyGa1-yN的第二层。本发明的另一方面是包括该结构的各种装置。本发明的另一方面涉及一种形成这种结构的方法，包括提供Si 1-x Ge x衬底并将分布式布拉格反射层直接沉积到衬底上。本发明的另一方面涉及一种光电检测器或光伏电池器件，其包括Si1-xGex衬底器件，III族氮化物器件和触点，以提供穿过Si1-xGex中的至少一个产生的电流的导电路径衬底器件和III族氮化物器件。

22. 发明授权

US09773666B2 Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and its alloys with AIN at low temperatures 有权
公开(公告)号：US09773666B2
公开(公告)日：2017-09-26
申请号：US13916724
申请日：2013-06-13
申请人： Neeraj Nepal , Charles R. Eddy, Jr. , Nadeemmullah A. Mahadik , Syed B Qadri , Michael J. Mehl
发明人： Neeraj Nepal , Charles R. Eddy, Jr. , Nadeemmullah A. Mahadik , Syed B Qadri , Michael J. Mehl
IPC分类号： H01L21/02 , H01L29/20 , C30B25/02 , C30B25/20 , C30B29/38 , C30B29/40
CPC分类号： H01L21/0254 , C30B25/02 , C30B25/205 , C30B29/38 , C30B29/40 , C30B29/403 , H01L21/02381 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L21/02661 , H01L29/2003
摘要： Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.

23. 发明授权

US09105499B1 Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material 有权
标题翻译：使用镓极性和氮极性III族氮化物材料的互补场效应晶体管
公开(公告)号：US09105499B1
公开(公告)日：2015-08-11
申请号：US14666494
申请日：2015-03-24
申请人： Francis J. Kub , Travis J. Anderson , Michael A. Mastro , Charles R. Eddy, Jr. , Jennifer K. Hite
发明人： Francis J. Kub , Travis J. Anderson , Michael A. Mastro , Charles R. Eddy, Jr. , Jennifer K. Hite
IPC分类号： H01L29/778 , H01L27/092 , H01L21/335 , H01L21/8252 , H01L29/78 , H01L21/8228 , H01L29/66 , H01L29/205 , H01L29/20 , H01L21/8238
CPC分类号： H01L27/095 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02631 , H01L21/26546 , H01L21/28575 , H01L21/28587 , H01L21/30612 , H01L21/3065 , H01L21/762 , H01L21/8228 , H01L21/8238 , H01L21/8252 , H01L27/092 , H01L27/0921 , H01L27/0922 , H01L29/045 , H01L29/1075 , H01L29/1608 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/207 , H01L29/365 , H01L29/407 , H01L29/41725 , H01L29/41766 , H01L29/42364 , H01L29/452 , H01L29/51 , H01L29/66431 , H01L29/66439 , H01L29/66462 , H01L29/66477 , H01L29/778 , H01L29/7781 , H01L29/7782 , H01L29/7783 , H01L29/7784 , H01L29/7786 , H01L29/7787 , H01L29/78 , H01L29/7831
摘要： A device with complementary non-inverted N-channel and inverted P-channel field effect transistors comprising a layer grown epitaxially on a substrate, a barrier layer, a two-dimensional electron gas in the first III-Nitride epitaxial layer, a second III-Nitride material layer, and a two-dimensional hole gas in the second III-Nitride epitaxial layer. A device with complementary inverted N-channel and non-inverted P-channel field effect transistors comprising a nitrogen-polar III-Nitride layer grown epitaxially, a barrier material layer, a two-dimensional hole gas, and a two-dimensional electron gas in the second III-Nitride epitaxial layer. A method of making complementary inverted P-channel and non-inverted N-channel III-Nitride field effect transistors. A method of making a complementary non-inverted P-channel field effect transistor and inverted N-channel III-Nitride field effect transistor on a substrate.
摘要翻译：具有互补非反相N沟道和反相P沟道场效应晶体管的器件，其包括在衬底上外延生长的层，第一III-氮化物外延层中的势垒层，二维电子气，第二III- 氮化物材料层和第二III-氮化物外延层中的二维空穴气体。具有互补反向N沟道和非反相P沟道场效应晶体管的器件，其包括外延生长的氮极III-氮化物层，阻挡材料层，二维空穴气体和二维电子气第二个III-氮化物外延层。制造互补的反相P沟道和非反相N沟道III氮化物场效应晶体管的方法。在衬底上制作互补的非反相P沟道场效应晶体管和反相N沟道III氮化物场效应晶体管的方法。

24. 发明授权

US09099375B2 Diamond and diamond composite material 有权
公开(公告)号：US09099375B2
公开(公告)日：2015-08-04
申请号：US13899433
申请日：2013-05-21
申请人： Francis J. Kub , Charles R. Eddy, Jr. , Boris N. Feygelson , Scooter Johnson
发明人： Francis J. Kub , Charles R. Eddy, Jr. , Boris N. Feygelson , Scooter Johnson
IPC分类号： C23C24/08 , H01L29/16 , H01L21/04 , H01L21/02
CPC分类号： H01L29/1602 , C23C24/082 , H01L21/02444 , H01L21/0245 , H01L21/02507 , H01L21/02513 , H01L21/02527 , H01L21/02601 , H01L21/0262 , H01L21/02628 , H01L21/0405
摘要： A structure having: a substrate and a diamond layer on the substrate having diamond nanoparticles. The diamond nanoparticles are formed by colliding diamond particles with the substrate. A method of: directing an aerosol of submicron diamond particles toward a substrate, and forming on the substrate a diamond layer of diamond nanoparticles formed by the diamond particles colliding with the substrate.

25. 发明授权

US09028919B2 Epitaxial graphene surface preparation for atomic layer deposition of dielectrics 有权
标题翻译：外延石墨烯表面准备用于电介质的原子层沉积
公开(公告)号：US09028919B2
公开(公告)日：2015-05-12
申请号：US14315356
申请日：2014-06-26
申请人： Nelson Garces , Virginia D. Wheeler , David Kurt Gaskill , Charles R. Eddy, Jr. , Glenn G. Jernigan
发明人： Nelson Garces , Virginia D. Wheeler , David Kurt Gaskill , Charles R. Eddy, Jr. , Glenn G. Jernigan
IPC分类号： H01L21/02 , C23C16/02 , C23C16/40 , C23C16/455 , B82Y30/00 , B82Y40/00 , C30B25/18
CPC分类号： H01L21/02315 , B82Y30/00 , B82Y40/00 , C23C16/02 , C23C16/403 , C23C16/45525 , C30B25/186
摘要： Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-κ oxide-based dielectric compounds such as Al2O3, HfO2, TaO5, or TiO2 are provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.
摘要翻译：用于制备外延石墨烯表面以使其适合于沉积高分子量的方法提供氧化物类介电化合物如Al2O3，HfO2，TaO5或TiO2。第一种方法将外延生长的石墨烯样品的原位湿化学调理与ALD反应器中的原位脉冲序列相结合。第二种方法将外延生长的石墨烯样品的原位干化学调理与原位脉冲序列相结合。

26. 发明授权

US08920877B2 Preparation of epitaxial graphene surfaces for atomic layer deposition of dielectrics 有权
标题翻译：制备用于电介质的原子层沉积的外延石墨烯表面
公开(公告)号：US08920877B2
公开(公告)日：2014-12-30
申请号：US13932041
申请日：2013-07-01
申请人： Nelson Garces , Virginia D. Wheeler , David Kurt Gaskill , Charles R. Eddy, Jr. , Glenn G. Jernigan
发明人： Nelson Garces , Virginia D. Wheeler , David Kurt Gaskill , Charles R. Eddy, Jr. , Glenn G. Jernigan
IPC分类号： C23C16/00 , C23C16/02 , C23C16/455 , H01L21/02 , C23C16/40 , B82Y40/00 , B82Y30/00
CPC分类号： H01L21/02315 , B82Y30/00 , B82Y40/00 , C23C16/02 , C23C16/403 , C23C16/45525 , C30B25/186
摘要： Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-κ oxide-based dielectric compounds such as Al2O3, HfO2, TaO5, or TiO2 are provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.
摘要翻译：用于制备外延石墨烯表面以使其适合于沉积高分子量的方法提供氧化物类介电化合物如Al2O3，HfO2，TaO5或TiO2。第一种方法将外延生长的石墨烯样品的原位湿化学调理与ALD反应器中的原位脉冲序列相结合。第二种方法将外延生长的石墨烯样品的原位干化学调理与原位脉冲序列相结合。

27. 发明授权

US08900939B2 Transistor with enhanced channel charge inducing material layer and threshold voltage control 有权
公开(公告)号：US08900939B2
公开(公告)日：2014-12-02
申请号：US14165602
申请日：2014-01-28
申请人： Francis J. Kub , Travis Anderson , Karl D. Hobart , Michael A. Mastro , Charles R. Eddy, Jr.
发明人： Francis J. Kub , Travis Anderson , Karl D. Hobart , Michael A. Mastro , Charles R. Eddy, Jr.
IPC分类号： H01L21/335 , H01L29/66 , H01L29/778 , H01L29/08 , H01L29/205 , H01L29/423 , H01L29/20 , H01L29/40
CPC分类号： H01L29/778 , H01L29/0847 , H01L29/0891 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/42316 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/7783 , H01L29/7786
摘要： High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.

28. 发明申请

US20140308437A1 Epitaxial Graphene Surface Preparation for Atomic Layer Deposition of Dielectrics 有权
标题翻译：外延石墨烯表面准备原子层沉积介质
公开(公告)号：US20140308437A1
公开(公告)日：2014-10-16
申请号：US14315356
申请日：2014-06-26
申请人： Nelson Garces , Virginia D. Wheeler , David Kurt Gaskill , Charles R. Eddy, Jr. , Glenn G. Jernigan
发明人： Nelson Garces , Virginia D. Wheeler , David Kurt Gaskill , Charles R. Eddy, Jr. , Glenn G. Jernigan
IPC分类号： C30B25/18
CPC分类号： H01L21/02315 , B82Y30/00 , B82Y40/00 , C23C16/02 , C23C16/403 , C23C16/45525 , C30B25/186
摘要： Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-κ oxide-based dielectric compounds such as Al2O3, HfO2, TaO5, or TiO2 are provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.
摘要翻译：用于制备外延石墨烯表面以使其适合于沉积高分子量的方法提供氧化物类介电化合物如Al2O3，HfO2，TaO5或TiO2。第一种方法将外延生长的石墨烯样品的原位湿化学调理与ALD反应器中的原位脉冲序列相结合。第二种方法将外延生长的石墨烯样品的原位干化学调理与原位脉冲序列相结合。

29. 发明授权

US08648390B2 Transistor with enhanced channel charge inducing material layer and threshold voltage control 有权
标题翻译：具有增强的通道电荷诱导材料层和阈值电压控制的晶体管
公开(公告)号：US08648390B2
公开(公告)日：2014-02-11
申请号：US13775309
申请日：2013-02-25
申请人： Francis J. Kub , Karl D. Hobart , Charles R. Eddy, Jr. , Michael A. Mastro , Travis Anderson
发明人： Francis J. Kub , Karl D. Hobart , Charles R. Eddy, Jr. , Michael A. Mastro , Travis Anderson
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/778 , H01L29/0847 , H01L29/0891 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/42316 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/7783 , H01L29/7786
摘要： High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.
摘要翻译：提出了高电子迁移率晶体管和制造工艺，其中提供均匀厚度的阻挡材料层用于在栅极区域中去除ECCIML层的源极和漏极区域内的增强沟道电荷诱导材料层（ECCIML）下的阈值电压控制。

30. 发明授权

US08518491B2 Preparation of epitaxial graphene surfaces for atomic layer deposition of dielectrics 有权
标题翻译：制备用于电介质的原子层沉积的外延石墨烯表面
公开(公告)号：US08518491B2
公开(公告)日：2013-08-27
申请号：US13182494
申请日：2011-07-14
申请人： Nelson Garces , Virginia D. Wheeler , David Kurt Gaskill , Charles R. Eddy, Jr. , Glenn G. Jernigan
发明人： Nelson Garces , Virginia D. Wheeler , David Kurt Gaskill , Charles R. Eddy, Jr. , Glenn G. Jernigan
IPC分类号： C23C16/00
CPC分类号： H01L21/02315 , B82Y30/00 , B82Y40/00 , C23C16/02 , C23C16/403 , C23C16/45525 , C30B25/186
摘要： Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-κ oxide-based dielectric compounds such as Al2O3, HfO2, TaO5, or TiO2 are provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.
摘要翻译：提供了用于制备外延石墨烯表面以使其适合于沉积高卡波氧化物的电介质化合物如Al 2 O 3，HfO 2，TaO 5或TiO 2的方法。第一种方法将外延生长的石墨烯样品的原位湿化学调理与ALD反应器中的原位脉冲序列相结合。第二种方法将外延生长的石墨烯样品的原位干化学调理与原位脉冲序列相结合。

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