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21. 发明公开

EP0988651A4 LATERAL DIFFUSED MOS TRANSISTOR WITH TRENCH SOURCE CONTACT 失效
标题翻译：而在沟道源接触横向扩散MOS晶体管
公开(公告)号：EP0988651A4
公开(公告)日：2007-10-17
申请号：EP98926453
申请日：1998-06-10
申请人： CREE MICROWAVE LLC
发明人： HEBERT FRANCOIS
IPC分类号： H01L29/78 , H01L21/225 , H01L21/336 , H01L29/10 , H01L29/417 , H01L29/423 , H01L29/45
CPC分类号： H01L29/66659 , H01L21/2257 , H01L29/0692 , H01L29/0696 , H01L29/1087 , H01L29/1095 , H01L29/4175 , H01L29/41766 , H01L29/42368 , H01L29/456 , H01L29/66696 , H01L29/7816 , H01L29/7835
摘要： A lateral diffused MOS transistor formed in an epitaxial layer includes a trench source contact (30). A method of making the transistor is also described, including an etch step for the trench.

22. 发明公开

EP1620943A4 N-WAY RF POWER AMPLIFIER CIRCUIT WITH INCREASED BACK-OFF CAPABILITY AND POWER ADDED EFFICIENCY USING SELECTED PHASE LENGTHS AND OUTPUT IMPEDANCES 审中-公开
标题翻译： N-WEGE-HF-LEISTUNGSVERSTÄRKERSCHALTUNG麻省理工学院VERGRÖSSERTER后退FÄHIGKEITUND MEHRLEISTUNGSEFFIZIENZ UNTER VERWENDUNGGEWÄHLTERPHASENLÄNGENUND AUSGANGSIMPEDANZEN
公开(公告)号：EP1620943A4
公开(公告)日：2006-08-09
申请号：EP04750107
申请日：2004-04-08
申请人： CREE MICROWAVE LLC
发明人： PENGELLY RAYMOND SYDNEY , WOOD SIMON MAURICE
IPC分类号： H03F3/68 , H03F1/02 , H03F1/07 , H03F1/32 , H03F3/24 , H03F3/60
CPC分类号： H03F1/0288 , H03F1/0277 , H03F1/32 , H03F3/602 , H03F2201/3203
摘要： An RF power amplifier circuit for amplifying an RF signal over a broad range of power with improved efficiency includes a carrier amplifier for amplifying an RF signal over a first range of power and with a power saturation level below the maximum of the broad range of power is disclosed. A plurality of peak amplifiers are connected in parallel with the carrier amplifier with each of the peak amplifiers being biased to sequentially provide an amplified output signal after the carrier amplifier approaches saturation. The input signal is applied through a signal splitter to the carrier amplifier and the plurality of peak amplifiers, and an output for receiving amplified output signals from the carrier amplifier and the plurality of peak amplifiers includes a resistive load R/2. The split input signal is applied through a 90° transformer to the carrier amplifier, and the outputs of the peak amplifiers are applied through 90° transformers to a output load. When operating below saturation, the carrier amplifier delivers power to a load of 2R and the carrier amplifier delivers current to the load, which is one-half the current at maximum power when the amplifier is saturated. In one embodiment with the output having an impedance, Z, the carrier amplifier and each peak amplifier is connected to the output through an output-matching network presenting an output impedance of less than Z to each amplifier and with each output-matching network having selected phase length to reduce reactance of the output impedance.
摘要翻译：用于以宽的功率范围放大RF信号并具有提高的效率的RF功率放大器电路包括用于在第一功率范围上放大RF信号的载波放大器，并且功率饱和电平低于宽范围功率的最大值披露。多个峰值放大器与载波放大器并联连接，每个峰值放大器被偏置以在载波放大器接近饱和之后顺序地提供放大的输出信号。输入信号通过信号分离器施加到载波放大器和多个峰值放大器，并且用于接收来自载波放大器和多个峰值放大器的放大输出信号的输出包括电阻负载R / 2。分离输入信号通过90°变压器施加到载波放大器，峰值放大器的输出通过90°变压器施加到输出负载。当工作在饱和以下时，载波放大器向2R负载提供电源，载波放大器向负载提供电流，当放大器饱和时，该电流为最大功率时的电流的一半。在输出具有阻抗Z的一个实施例中，载波放大器和每个峰值放大器通过输出匹配网络连接到输出端，输出匹配网络向每个放大器呈现小于Z的输出阻抗，并且每个输出匹配网络已经选择相位长度以减小输出阻抗的电抗。

23. 发明公开

EP1620325A4 N-WAY RF POWER AMPLIFIER CIRCUIT WITH INCREASED BACK-OFF CAPABILITY AND POWER ADDED EFFICIENCY USING UNEQUAL INPUT POWER DIVISION 有权转让
标题翻译：通过增加容量，提高BACKOFF额外的电源使用效率相等的输入功率划分NWAY高频功率放大电路
公开(公告)号：EP1620325A4
公开(公告)日：2006-08-09
申请号：EP04749959
申请日：2004-04-09
申请人： CREE MICROWAVE LLC
发明人： PENGELLY RAYMOND SYDNEY , WOOD SIMON MAURICE
IPC分类号： H03F1/02 , H03F3/68 , B65D51/16 , B65D51/24 , H01L20060101 , H03F1/07 , H03F1/32 , H03F3/19 , H03F3/24 , H03F3/60
CPC分类号： H03F1/0288 , H03F1/0277 , H03F1/32 , H03F3/602 , H03F2200/451 , H03F2201/3203
摘要： An RF power amplifier circuit for amplifying an RF signal over a broad range of power with improved efficiency includes a carrier amplifier for amplifying an RF signal over a first range of power and with a power saturation level below the maximum of the broad range of power is disclosed. One or more peak amplifiers are connected in parallel with the carrier amplifier with each of the peak amplifiers being biased to sequentially provide an amplified output signal after the carrier amplifier approaches saturation. The input signal is applied through a signal splitter to the carrier amplifier and the plurality of peak amplifiers, and an output for receiving amplified output signals from the carrier amplifier and the plurality of peak amplifiers includes a resistive load R/2. The split input signal is applied through a 90° transformer to the carrier amplifier, and the outputs of the peak amplifiers are applied through 90° transformers to a output load. When operating below saturation, the carrier amplifier delivers power to a load of 2R when the carrier amplifier delivers current to the load, which is one-half the current at maximum power and the amplifier is saturated. The signal splitter can split the input signal power equally among the carrier and one or more peak amplifiers, or the input signal can be split unequally with the carrier amplifier receiving less input power than each of the peak amplifiers and vice versa.

24. 发明公开

EP2262017A2 Flip-Chip bonding of light emitting devices and light emitting devices suitable for Flip-Chip bonding 审中-公开
标题翻译：的光发射器件和倒装芯片键合合适的发光器件倒装芯片接合
公开(公告)号：EP2262017A2
公开(公告)日：2010-12-15
申请号：EP10179427.9
申请日：2002-07-22
申请人： Cree, Inc. , Cree Microwave, LLC
发明人： Slater, David , Bharathan, Jayesh , Edmond, John , Raffetto, Mark , Mohammed, Anwar , Negley, Gerald H. , Andrews, Peter
IPC分类号： H01L33/62 , H01L33/40
CPC分类号： H01L33/62 , H01L33/38 , H01L2224/04026 , H01L2224/26175 , H01L2224/291 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount.; Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.

25. 发明授权

EP1573908B1 IMPROVED RF TRANSISTOR AMPLIFIER LINEARITY USING SUPPRESSED THIRD ORDER TRANSCONDUCTANCE 有权转让
标题翻译：使用禁止甲RF晶体管放大器改进线性跨导三阶
公开(公告)号：EP1573908B1
公开(公告)日：2010-06-02
申请号：EP03768732.4
申请日：2003-11-04
申请人： CREE MICROWAVE, LLC
发明人： PENGELLY, Raymond, S. , WOOD, Simon, M. , QUINN, John, P.
IPC分类号： H03F3/68
CPC分类号： H03F3/602 , H03F1/3205 , H03F3/211

26. 发明公开

EP1415378A4 VOLTAGE LIMITING PROTECTION FOR HIGH FREQUENCY POWER DEVICE 审中-公开
标题翻译：电压来控制保护，在高频用功率器件
公开(公告)号：EP1415378A4
公开(公告)日：2008-10-08
申请号：EP02756459
申请日：2002-07-12
申请人： CREE MICROWAVE LLC
发明人： BREWER KENNETH P , BARTLOW HOWARD D , DARMAWAN JOHAN A
IPC分类号： H01L27/04 , H01L21/822 , H01L23/60 , H01L23/62 , H01L23/66 , H01L27/02 , H02H9/04 , H03K17/0812 , H02H9/00
CPC分类号： H01L23/60 , H01L23/66 , H01L24/48 , H01L27/0255 , H01L2223/6655 , H01L2224/48137 , H01L2224/48195 , H01L2924/00014 , H01L2924/12035 , H01L2924/1305 , H01L2924/13055 , H01L2924/13063 , H01L2924/14 , H01L2924/19011 , H01L2924/19041 , H01L2924/19107 , H01L2924/3011 , H01L2924/3025 , H03K17/08122 , H01L2924/00 , H01L2224/45099
摘要： An RF power device comprising a power transistor fabricated in a first semiconductor chip and a MOSCAP type structure fabricated in a second semiconductor chip. A voltage limiting device is provided for protecting the power transistor from input voltage spikes and is preferably fabricated in the semiconductor chip along with the MOSCAP. Alternatively, the voltage limiting device can be a discrete element fabricated on or adjacent to the capacitor semiconductor chip. By removing the voltage limiting device from the power transistor chip, fabrication and testing of the voltage limiting device is enhanced, and semiconductor area for the power device is increased and aids in flexibility of device fabrication.

27. 发明公开

EP1894250A1 SEMICONDUCTOR DEVICES HAVING VARYING ELECTRODE WIDTHS TO PROVIDE NON-UNIFORM GATE PITCHES AND RELATED METHODS 有权转让
标题翻译：为变量的电子宽幅为提供不等形的栅极区划和相关操作半导体器件
公开(公告)号：EP1894250A1
公开(公告)日：2008-03-05
申请号：EP06758302.1
申请日：2006-04-10
申请人： CREE MICROWAVE, LLC
发明人： SRIRAM, Saptharishi
IPC分类号： H01L29/417 , H01L29/423
CPC分类号： H01L29/41758 , H01L29/42316
摘要： Semiconductor devices including a plurality of unit cells connected in parallel are provided. Each of the unit cells have a first electrode, a second electrode and a gate finger. One of the first electrodes at a center of the semiconductor device has a first width and one of the first electrodes at a periphery of the semiconductor device has a second width, smaller than the first width. The second electrodes have a substantially constant width such that a pitch between the gate fingers is non-uniform. Related methods are also provided.

28. 发明公开

EP1547394A4 PACKAGED RF POWER TRANSISTOR HAVING RF BYPASSING/OUTPUT MATCHING NETWORK 有权转让
标题翻译： WITH RF旁路/输出匹配网络围封RF功率晶体管
公开(公告)号：EP1547394A4
公开(公告)日：2006-09-20
申请号：EP03759357
申请日：2003-09-17
申请人： CREE MICROWAVE LLC
发明人： CRESCENZI JR EMIL JAMES
IPC分类号： H01L23/66 , H03F1/56 , H04N9/00 , H03F3/60
CPC分类号： H03F3/195 , H01L23/66 , H01L2223/665 , H01L2224/48091 , H01L2924/1305 , H01L2924/30107 , H01L2924/3011 , H03F1/56 , H01L2924/00014 , H01L2924/00
摘要： The linearity of a wideband RF power transistor amplifier is improved by including output matching circuit and an integrated bias/RF diplexer with RF and video bypassing capacitor network within the transistor package and connected directly to the transistor. By placing the RF and video bypass power supply circuitry within the package and close to the transistor, the input impedance resonance can be increased from approximately 50 MHz to over 125 MHz, thereby reducing AM/PM distortion in the output signal.

29. 发明公开

EP1570572A4 SINGLE PACKAGE MULTI-CHIP RF POWER AMPLIFIER 有权转让
标题翻译： MEHRCHIP-HF-LEISUNGSVERSTÄRKERINEINZELKAPSELUNG
公开(公告)号：EP1570572A4
公开(公告)日：2006-08-30
申请号：EP03790018
申请日：2003-11-24
申请人： CREE MICROWAVE LLC
发明人： PENGELLY RAYMOND SYDNEY , WOOD SIMON MAURICE , QUINN JOHN PHILLIP
IPC分类号： H01L23/66 , H01L25/07 , H03F3/60 , H03F3/68
CPC分类号： H03F3/602 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/072 , H01L2223/6644 , H01L2224/48091 , H01L2224/49111 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01023 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13063 , H01L2924/13064 , H01L2924/19043 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： Disclosed are a multi-chip power amplifier comprising a plurality chips with each chip being a transistor amplifier, and a housing in which all of the semiconductor chips are mounted. A plurality of input leads extend into the housing and a plurality of output leads extend from the housing. A plurality of first matching networks couple a semiconductor chip to an input lead and a plurality of second matching networks couple each semiconductor chip to an output lead whereby each chip has its own input lead and output lead. By providing all amplifier chips within a single housing with matching networks within the housing coupling the chips to the input and output leads, manufacturing cost is reduced and the overall package footprint on a mounting substrate is reduced. Further, the close proximity of the chips within the housing reduces phase differences among signals in the semiconductor chips.
摘要翻译：公开了一种多芯片功率放大器，其包括多个芯片，每个芯片是晶体管放大器，以及壳体，其中安装了所有半导体芯片。多个输入引线延伸到壳体中，并且多个输出引线从壳体延伸。多个第一匹配网络将半导体芯片耦合到输入引线，并且多个第二匹配网络将每个半导体芯片耦合到输出引线，由此每个芯片具有其自己的输入引线和输出引线。通过将单个外壳内的所有放大器芯片提供到壳体内的匹配网络，将芯片耦合到输入和输出引线，降低了制造成本，并降低了安装基板上的整体封装占地面积。此外，壳体内的芯片的紧密接近减少了半导体芯片中的信号之间的相位差。

30. 发明公开

EP1620943A1 N-WAY RF POWER AMPLIFIER CIRCUIT WITH INCREASED BACK-OFF CAPABILITY AND POWER ADDED EFFICIENCY USING SELECTED PHASE LENGTHS AND OUTPUT IMPEDANCES 审中-公开
标题翻译：具有增强的回退CAPABILITY AND更高的电源效率N路RF功率放大电路中使用选择的相位长度和输出阻抗
公开(公告)号：EP1620943A1
公开(公告)日：2006-02-01
申请号：EP04750107.7
申请日：2004-04-08
申请人： CREE MICROWAVE, LLC
发明人： PENGELLY, Raymond, Sydney , WOOD, Simon, Maurice
IPC分类号： H03F3/68
CPC分类号： H03F1/0288 , H03F1/0277 , H03F1/32 , H03F3/602 , H03F2201/3203
摘要： An RF power amplifier circuit for amplifying an RF signal over a broad range of power with improved efficiency includes a carrier amplifier for amplifying an RF signal over a first range of power and with a power saturation level below the maximum of the broad range of power is disclosed. A plurality of peak amplifiers are connected in parallel with the carrier amplifier with each of the peak amplifiers being biased to sequentially provide an amplified output signal after the carrier amplifier approaches saturation. The input signal is applied through a signal splitter to the carrier amplifier and the plurality of peak amplifiers, and an output for receiving amplified output signals from the carrier amplifier and the plurality of peak amplifiers includes a resistive load R/2. The split input signal is applied through a 90° transformer to the carrier amplifier, and the outputs of the peak amplifiers are applied through 90° transformers to a output load. When operating below saturation, the carrier amplifier delivers power to a load of 2R and the carrier amplifier delivers current to the load, which is one-half the current at maximum power when the amplifier is saturated. In one embodiment with the output having an impedance, Z, the carrier amplifier and each peak amplifier is connected to the output through an output-matching network presenting an output impedance of less than Z to each amplifier and with each output-matching network having selected phase length to reduce reactance of the output impedance.

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