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    • 25. 发明专利
    • PLASMA PROCESSING APPARATUS
    • JP2002016052A
    • 2002-01-18
    • JP2001129527
    • 2001-04-26
    • TOKYO ELECTRON LTDYASAKA YASUNORIANDO MAKOTO
    • ISHII NOBUOYASAKA YASUNORI
    • H01L21/302H01L21/3065H01L21/31
    • PROBLEM TO BE SOLVED: To provide a plasma processing apparatus, which can generate a uniform plasma in a processing container and thus can provide regular processing, even if a wafer has a large diameter. SOLUTION: The plasma processing apparatus includes a processing container 4 having a mount base 10 therein, glass plate 8 for covering an upper opening of the container 4, microwave supply means 50, coaxial waveguide 52 connected at its one side to the microwave supply means 50 and having an inner conductor 52B and an outer conductor 52A, radial waveguide box 54 connected to the other end side of the outer conductor 52B of the waveguide 52 and extended downwards after expanded radially outwardly from the other end of the outer conductor 52A, disk-shaped antenna member 60 connected in its center with the other end of the inner conductor 52B for covering a lower end opening of the radial conductor box 54, and reflector 54 made of a metal for reflecting electric field, reflected by an inner wall of the container 4 at a side opposite to a part of the antenna member 60 connected to the 52B.