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21. 发明专利

JP2012033961A Substrate processing device 有权
标题翻译：基板处理装置
公开(公告)号：JP2012033961A
公开(公告)日：2012-02-16
申请号：JP2011236625
申请日：2011-10-28
申请人： Semes Co Ltd , セメス株式会社Semes Co., Ltd.
发明人： SONG GIL-HUN , PARK PYEONG-JAE
IPC分类号： H01L21/306 , H01L21/304
CPC分类号： H01L21/67051 , H01L21/67034 , H01L21/6708 , H01L21/68714
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing device for efficiently washing or etching the upper and lower faces of a substrate.SOLUTION: In a substrate processing device, a substrate is supported and the supported substrate is rotated. At least one of chemical, washing liquid and gas is selectively injected to the lower face of the rotated substrate. At least one of chemical, washing liquid and gas being which are the same as the chemical, the washing liquid and the gas injected to the lower face of the substrate is selectively injected to the upper face of the rotated substrate. By injecting the chemical, the washing liquid or the gas to the lower part of the substrate for washing or etching the lower face of the substrate, processes for the upper face and the lower face of the substrate can be carried out at the same time.
摘要翻译：要解决的问题：提供一种用于有效地洗涤或蚀刻基板的上表面和下表面的基板处理装置。解决方案：在基板处理装置中，支撑基板并旋转支撑的基板。选择性地将化学，洗涤液体和气体中的至少一种注入旋转的基底的下表面。与化学品相同的化学品，洗涤液体和气体中的至少一种，喷射到基底的下表面的洗涤液体和气体被选择性地注入旋转的基底的上表面。通过将化学品，洗涤液或气体注入到用于洗涤或蚀刻衬底的下表面的衬底的下部，可以同时进行衬底的上表面和下表面的处理。版权所有（C）2012，JPO＆INPIT

22. 发明专利

JP4790743B2 Carbon nanotube synthesis apparatus and a carbon nanotube synthesis system 有权
公开(公告)号：JP4790743B2
公开(公告)日：2011-10-12
申请号：JP2008078752
申请日：2008-03-25
申请人：セメス株式会社Semes Co., Ltd.
发明人：重根趙 , 成洙金 , 湖水黄
IPC分类号： C01B31/02
CPC分类号： C01B31/0233 , B82Y30/00 , B82Y40/00 , C01B32/162 , Y10S977/843
摘要： In a method of manufacturing a carbon nanotube, a boat configured to receive substrates is positioned outside of a synthesis space where the carbon nanotube is synthesized. The substrates are loaded into the boat. The boat is then transferred to the synthesis space. A process for forming the carbon nanotube is performed on the substrates in the synthesis space to form the carbon nanotube. Thus, the carbon nanotube may be effectively manufactured.

23. 发明专利

JP4784944B2 A treatment liquid supply unit, a substrate processing apparatus and method using the same 有权
公开(公告)号：JP4784944B2
公开(公告)日：2011-10-05
申请号：JP2008281897
申请日：2008-10-31
申请人：セメス株式会社Semes Co., Ltd.
发明人：寅チョル柳
IPC分类号： H01L21/027
CPC分类号： G03F7/162 , H01L21/6715 , H01L21/67248

24. 发明专利

JP4704418B2 Carbon nanotube synthesis apparatus and method 有权
公开(公告)号：JP4704418B2
公开(公告)日：2011-06-15
申请号：JP2007333600
申请日：2007-12-26
申请人：セメス株式会社Semes Co., Ltd.
发明人：重根趙 , 炯俊金 , 湖水黄
IPC分类号： C01B31/02 , B01J37/00 , B01J37/18
CPC分类号： B82Y30/00 , B01J23/745 , B01J23/755 , B01J37/18 , B82Y40/00 , C01B32/16
摘要： An apparatus for synthesizing a carbon nanotube includes a reaction chamber, a cassette, a transferring member, a heater, a gas supply member and a gas exhausting part. The carbon nanotube is synthesized in the reaction chamber. The reaction chamber has a substantially vertical major axis. The cassette holds a plurality of substrates. The transferring member transfers the cassette along a direction substantially in parallel relative to the major axis to load/unload the cassette into/from the reaction chamber. The heater heats the reaction chamber. The gas supply member provides the reaction chamber with a gas for synthesizing the carbon nanotube. The gas exhausting member exhausts a remaining gas from the reaction chamber. Collecting the carbon nanotube may be facilitated and managing the reaction chamber may be effective to enhance a productivity of the carbon nanotube.

25. 发明专利

JP2011014906A Method and apparatus for processing substrate 有权
标题翻译：用于处理基板的方法和装置
公开(公告)号：JP2011014906A
公开(公告)日：2011-01-20
申请号：JP2010143521
申请日：2010-06-24
申请人： Semes Co Ltd , セメス株式会社Semes Co., Ltd.
发明人： RHO EUN-SU , BAE JEONG-YONG
IPC分类号： H01L21/027 , H01L21/304
CPC分类号： G03F7/422 , G03F7/423 , H01L21/6708
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for processing a substrate for removing photoresist on the substrate.SOLUTION: The method for processing a substrate includes steps of: arranging a substrate formed with a photoresist film; providing a processing liquid for removing the photoresist film onto the substrate; and providing mist on the substrate to contact the processing liquid. Since the mist reacts with the processing liquid to additionally form a hydroxide radical and, since the mist and the processing liquid perform heat generation reaction, the efficiency in removal of the photoresist can be improved.
摘要翻译：要解决的问题：提供一种处理基板以去除基板上的光致抗蚀剂的方法和装置。解决方案：用于处理基板的方法包括以下步骤：布置形成有光致抗蚀剂膜的基板; 提供用于将光致抗蚀剂膜去除到基底上的处理液体; 并在基板上提供雾以接触处理液体。由于雾与处理液反应以另外形成氢氧根，并且由于雾和处理液进行发热反应，因此可以提高光致抗蚀剂的除去效率。

26. 发明专利

JP4461163B2 A substrate processing apparatus and substrate processing method 有权
公开(公告)号：JP4461163B2
公开(公告)日：2010-05-12
申请号：JP2007183069
申请日：2007-07-12
申请人：セメス株式会社Semes Co., Ltd.
发明人： ▲教▼ 旭具 , ボラムチャン成 , 重根趙
IPC分类号： H01L21/304
CPC分类号： H01L21/67051 , H01L21/67028 , H01L21/67034

27. 发明专利

JP4388020B2 Semiconductor plasma processing apparatus and method 有权
公开(公告)号：JP4388020B2
公开(公告)日：2009-12-24
申请号：JP2006011279
申请日：2006-01-19
申请人：セメス株式会社Semes Co., Ltd.
发明人：奇英李 , 炯俊金
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01J37/32357 , H01J37/321

28. 发明专利

JP2009295982A Chemical flow method, method for manufacturing integrated circuit element using the same, and device 有权
标题翻译：化学流动方法，使用其制造集成电路元件的方法和装置
公开(公告)号：JP2009295982A
公开(公告)日：2009-12-17
申请号：JP2009133420
申请日：2009-06-02
申请人： Semes Co Ltd , セメス株式会社Semes Co., Ltd.
发明人： YEO SEUNG CHUL
IPC分类号： H01L21/306 , B08B3/04 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To reduce bending of a substrate for manufacturing an integrated circuit element. SOLUTION: When a part of the substrate bends by dipping of the substrate or flow of chemicals, chemicals stored in a part of the substrate or chemicals caused to flow to a part of the substrate are made to flow to the outside of a bath so that force acts in the opposite direction of force to be applied to a part of the substrate so that a part of the substrate bends. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：减少用于制造集成电路元件的基板的弯曲。解决方案：当衬底的一部分通过浸渍基底或化学物质流动而弯曲时，使存储在基底的一部分中的化学品或引起流到基底的一部分的化学物质流入到使得力作用在相反的力方向上以施加到基底的一部分，使得基底的一部分弯曲。版权所有（C）2010，JPO＆INPIT

29. 发明专利

JP4351197B2 Substrate transport apparatus 有权
公开(公告)号：JP4351197B2
公开(公告)日：2009-10-28
申请号：JP2005223253
申请日：2005-08-01
申请人：セメス株式会社Semes Co., Ltd.
发明人：貞烈崔 , 舟楫朴
IPC分类号： H01L21/677 , B25J15/08 , B65G49/07
CPC分类号： H01L21/68707

30. 发明专利

JP2009158925A Substrate processing apparatus, and substrate transfer method using the same 有权
标题翻译：基板处理装置，以及使用其的基板转印方法
公开(公告)号：JP2009158925A
公开(公告)日：2009-07-16
申请号：JP2008284227
申请日：2008-11-05
申请人： Semes Co Ltd , セメス株式会社Semes Co., Ltd.
发明人： KIM DUK-SIK , LEE JOON-JAE
IPC分类号： H01L21/677
CPC分类号： H01L21/67769 , H01L21/67178 , H01L21/67745 , H01L21/67766 , H01L21/67778
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate transfer method using the same. SOLUTION: In the substrate processing apparatus 10, an interface unit transfers substrates between a first processing unit 30 and a second processing unit (exposure unit) 60, of a multi-layer structure. The interface unit is provided with substrate accommodating sections for carrying a substrate from and to the first processing unit. Buffer sections for preventing substrate transfer congestion are arranged in the interface unit or in the first processing unit. Thereby, the substrate transfer between the first processing unit and the second processing unit (exposure unit), of the multi-layer structure, can be performed more efficiently. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用其的基板处理装置和基板转印方法。解决方案：在基板处理装置10中，接口单元在多层结构的第一处理单元30和第二处理单元（曝光单元）60之间传送基板。接口单元设置有用于从第一处理单元承载基板的基板容纳部。用于防止底物转移拥塞的缓冲部分布置在接口单元或第一处理单元中。由此，可以更有效地进行多层结构的第一处理单元与第二处理单元（曝光单元）之间的基板转印。版权所有（C）2009，JPO＆INPIT

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