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21. 发明专利

JP2012104832A Vertical light emitting diode (vled) having n-type confinement structure with etch stop layer and method of fabrication 审中-公开
标题翻译：具有蚀刻停止层的N型配合结构的垂直发光二极管（VLED）和制造方法
公开(公告)号：JP2012104832A
公开(公告)日：2012-05-31
申请号：JP2011246541
申请日：2011-11-10
申请人： Semileds Optoelectronics Co Ltd , セミエルイーディーズオプトエレクトロニクスカンパニーリミテッド
发明人： KUNG-HSIEH HSU , YAOKWUO WANG , WEN-HUANG LIU , CHUANG ANN TRAN
IPC分类号： H01L33/06 , H01L33/32
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/02 , H01L2224/48091 , H01L2224/48464 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To reduce leakage current in a reverse bias state of a vertical light emitting diode (VLED) die.SOLUTION: A vertical light emitting diode (VLED) die 10A includes a p-type confinement layer 12A, an active layer 14A on the p-type confinement layer configured to emit light, and an n-type confinement structure 16A having at least one etch stop layer 22A configured to protect the active layer. A method for fabricating the vertical light emitting diode (VLED) die includes the steps of: providing a carrier substrate 24A; forming on the carrier substrate an n-type confinement structure having at least one etch stop layer; forming an active layer on the n-type confinement structure; forming a p-type confinement layer on the active layer; and removing the carrier substrate.
摘要翻译：要解决的问题：为了减少垂直发光二极管（VLED）裸片的反向偏置状态下的漏电流。解决方案：垂直发光二极管（VLED）管芯10A包括p型限制层12A，被配置为发光的p型限制层上的有源层14A和具有发光的n型限制结构16A 配置为保护有源层的至少一个蚀刻停止层22A。制造垂直发光二极管（VLED）晶片的方法包括以下步骤：提供载体衬底24A; 在所述载体衬底上形成具有至少一个蚀刻停止层的n型约束结构; 在n型约束结构上形成有源层; 在活性层上形成p型约束层; 并移除载体衬底。版权所有（C）2012，JPO＆INPIT

22. 发明公开

EP2706570A2 Light emitting diode 审中-公开
标题翻译： Lichtemittierende二极管
公开(公告)号：EP2706570A2
公开(公告)日：2014-03-12
申请号：EP12189356.4
申请日：2012-10-19
申请人： Semileds Optoelectronics Co., Ltd.
发明人： Doan, Trung-Tri , Cheng, Chao-Chen , Shih, Yi-Feng
IPC分类号： H01L25/075 , H01L33/62
CPC分类号： H01L33/04 , H01L25/0753 , H01L33/385 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a light emitting diode (2), which comprises a first LED die (20a), a second LED die (20b), and a dummy LED die (20c), wherein the second LED die (20b) is disposed between the first LED die (20a)and the dummy LED die (20c), and each die comprises a first semi-conductive layer (200), a second semi-conductive layer (202), and a multiple quantum well layer (201) disposed between the first (200) and the second (202) semi-conductive layers. The first semi-conductive layer (200) of the first LED (20a) die is coupled to the second semi-conductive layer (202) of the second LED die (20b), and the first semi-conductive layer (200) of the second LED die (20b) is coupled to the first (200) and second (202) semi-conductive layers of the dummy LED die (20c).
摘要翻译：本发明提供了一种发光二极管（2），其包括第一LED管芯（20a），第二LED管芯（20b）和虚拟LED管芯（20c），其中第二LED管芯（20b）设置在第一LED芯片（20a）和虚拟LED管芯（20c），并且每个管芯包括第一半导电层（200），第二半导体层（202）和设置在多个量子阱层（201）在第一（200）和第二（202）半导体层之间。第一LED（20a）管芯的第一半导电层（200）耦合到第二LED管芯（20b）的第二半导体层（202），并且第二半导体层（200）的第一半导电层第二LED管芯（20b）耦合到虚拟LED管芯（20c）的第一（200）和第二（202）半导体层。

23. 发明公开

EP2704195A2 Light emitting diode 审中-公开
标题翻译：发光二极管
公开(公告)号：EP2704195A2
公开(公告)日：2014-03-05
申请号：EP12189357.2
申请日：2012-10-19
申请人： Semileds Optoelectronics Co., Ltd.
发明人： Doan, Trung-Tri , Cheng, Chao-Chen , Shih, Yi-Feng
IPC分类号： H01L25/075 , H01L33/62
CPC分类号： H01L33/64 , H01L25/0753 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a light emitting diode (2), which comprises a first LED die (20a) and a second LED die (20b), each die comprising a first semi-conductive layer (200), a second semi-conductive layer (202), and a multiple quantum well layer (201) disposed between the first (200) and the second (202) semi-conductive layers, wherein the first semi-conductive layer (200) of the first LED die (20a) is coupled to the second semi-conductive layer (202) of the second LED die (20b) so as to form a serially connected structure whereby the consuming current and heat generation of the light emitting diode (2) are lowered so that the size of heat dissipating device for the light emitting diode (2) can be reduced and illumination of the light emitting diode can be enhanced.
摘要翻译：本发明提供一种发光二极管（2），其包括第一LED管芯（20a）和第二LED管芯（20b），每个管芯包括第一半导体层（200），第二半导体层 202）以及设置在所述第一（200）和所述第二（202）半导体层之间的多量子阱层（201），其中所述第一LED晶粒（20a）的所述第一半导体层（200）到第二LED晶粒（20b）的第二半导体层（202），从而形成串联连接结构，由此降低发光二极管（2）的消耗电流和热量产生，使得散热尺寸可以减少用于发光二极管（2）的器件并且可以增强发光二极管的照明。

24. 发明公开

EP2498307A2 LIGHT EMITTING DIODE DEVICE 审中-公开
标题翻译： LICHTEMITTIERENDE DIODENVORRICHTUNG
公开(公告)号：EP2498307A2
公开(公告)日：2012-09-12
申请号：EP10827984.5
申请日：2010-11-01
申请人： Semileds Optoelectronics Co., Ltd.
发明人： LIU, Wen, Huang , SHAN, Li, Wei , CHU, Chen, Fu
IPC分类号： H01L33/46
CPC分类号： H01L33/60 , H01L33/22 , H01L33/38 , H01L33/405
摘要： A high-brightness vertical light emitting diode (LED) device having an outwardly located metal electrode. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED of the invention has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.
摘要翻译：具有向外定位的金属电极的高亮度垂直发光二极管（LED）装置。 LED器件通过以下方式形成：通过使用诸如物理气相沉积（PVD），化学气相沉积（CVD），蒸发，电镀或沉积的沉积方法在LED外延结构的表面的边缘上形成金属电极其任何组合; 然后执行包装过程。 LED的组成可以是氮化物，磷化物或砷化物。本发明的LED具有以下优点：提高电流扩散性能，降低金属电极的光吸收，增加亮度，提高效率，从而提高能量效率。金属电极位于器件的边缘和发光侧。金属电极具有两个侧壁，其中一个侧壁可以从另一个侧壁接收来自该装置的更多发射光。

25. 发明公开

EP2610551A1 LLB bulb having light extracting rough surface pattern and method of fabrication 审中-公开
标题翻译： LLB-Birne mit lichtherausziehung rauemOberflächenmusterund Herstellungsverfahren
公开(公告)号：EP2610551A1
公开(公告)日：2013-07-03
申请号：EP12182683.8
申请日：2012-08-31
申请人： SemiLEDs Optoelectronics Co., Ltd.
发明人： Doan, Trung Tri , Yen, Jui-Kang
IPC分类号： F21V3/04 , F21V5/00 , F21Y101/02
CPC分类号： F21V3/049 , F21K9/232 , F21K9/64 , F21V3/04 , F21V5/00 , F21Y2115/10
摘要： A LLB bulb includes a base, a LED light source configured to emit electromagnetic radiation, and a lens/cover having a light extracting rough surface pattern (LERSP) configured to reduce glare and reflection in the LLB bulb without light loss. A method for fabricating the LLB bulb includes the steps of providing the lens/cover, and forming the light extracting rough surface pattern (LERSP) on the lens/cover. The lens/cover can be fabricated with the light extracting rough surface pattern (LERSP) using a process such as bead blasting, sand blasting, etching (chemical or plasma), or molding.
摘要翻译： LLB灯泡包括基座，被配置为发射电磁辐射的LED光源，以及具有光提取粗糙表面图案（LERSP）的透镜/盖子，其被配置为减少LLB灯泡中的眩光和反射而没有光损失。用于制造LLB灯泡的方法包括以下步骤：提供透镜/盖，并在透镜/盖上形成光提取粗糙表面图案（LERSP）。可以使用诸如珠粒喷砂，喷砂，蚀刻（化学或等离子体）或模塑的工艺，用光提取粗糙表面图案（LERSP）制造透镜/盖。

26. 发明授权

EP2237335B1 Method for fabricating a white-light emitting light emitting diode chip 有权
标题翻译：制造白色发光二极管芯片的方法
公开(公告)号：EP2237335B1
公开(公告)日：2016-03-23
申请号：EP09010450.6
申请日：2009-08-13
申请人： VisEra Technologies Company Limited , SemiLEDs Optoelectronics Co., Ltd.
发明人： Lin, Chun-Chi , Lin, Tzu-Han , Kang, Wei-Hung
IPC分类号： H01L33/50
CPC分类号： H01L33/508

27. 发明公开

EP2706570A3 Light emitting diode 审中-公开
标题翻译：发光二极管
公开(公告)号：EP2706570A3
公开(公告)日：2014-08-20
申请号：EP12189356.4
申请日：2012-10-19
申请人： Semileds Optoelectronics Co., Ltd.
发明人： Doan, Trung-Tri , Cheng, Chao-Chen , Shih, Yi-Feng
IPC分类号： H01L25/075 , H01L27/15 , H01L33/62
CPC分类号： H01L33/04 , H01L25/0753 , H01L33/385 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a light emitting diode (2), which comprises a first LED die (20a), a second LED die (20b), and a dummy LED die (20c), wherein the second LED die (20b) is disposed between the first LED die (20a)and the dummy LED die (20c), and each die comprises a first semi-conductive layer (200), a second semi-conductive layer (202), and a multiple quantum well layer (201) disposed between the first (200) and the second (202) semi-conductive layers. The first semi-conductive layer (200) of the first LED (20a) die is coupled to the second semi-conductive layer (202) of the second LED die (20b), and the first semi-conductive layer (200) of the second LED die (20b) is coupled to the first (200) and second (202) semi-conductive layers of the dummy LED die (20c).
摘要翻译：本发明提供了一种发光二极管（2），其包括第一LED管芯（20a），第二LED管芯（20b）和虚拟LED管芯（20c），其中第二LED管芯（20b）所述第一LED管芯20a和所述虚拟LED管芯20c，并且每个管芯包括第一半导体层200，第二半导体层202和多量子阱层201，在第一（200）和第二（202）半导体层之间。第一LED（20a）管芯的第一半导体层（200）耦合到第二LED管芯（20b）的第二半导体层（202），并且第一LED 第二LED管芯（20b）耦合到虚拟LED管芯（20c）的第一（200）和第二（202）半导体层。

28. 发明公开

EP2704195A3 Light emitting diode 审中-公开
标题翻译：光二极管
公开(公告)号：EP2704195A3
公开(公告)日：2014-08-20
申请号：EP12189357.2
申请日：2012-10-19
申请人： Semileds Optoelectronics Co., Ltd.
发明人： Doan, Trung-Tri , Cheng, Chao-Chen , Shih, Yi-Feng
IPC分类号： H01L25/075 , H01L27/15 , H01L33/62
CPC分类号： H01L33/64 , H01L25/0753 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a light emitting diode (2), which comprises a first LED die (20a) and a second LED die (20b), each die comprising a first semi-conductive layer (200), a second semi-conductive layer (202), and a multiple quantum well layer (201) disposed between the first (200) and the second (202) semi-conductive layers, wherein the first semi-conductive layer (200) of the first LED die (20a) is coupled to the second semi-conductive layer (202) of the second LED die (20b) so as to form a serially connected structure whereby the consuming current and heat generation of the light emitting diode (2) are lowered so that the size of heat dissipating device for the light emitting diode (2) can be reduced and illumination of the light emitting diode can be enhanced.

29. 发明公开

EP2498304A2 VERTICAL LIGHT EMITTING DIODE HAVING AN OUTWARD FRAME-TYPE ELECTRODE AND EQUIPMENT THEREOF 审中-公开
标题翻译：垂直发光二极管与框结构及其装置LEAD
公开(公告)号：EP2498304A2
公开(公告)日：2012-09-12
申请号：EP10827985.2
申请日：2010-10-29
申请人： Semileds Optoelectronics Co., Ltd.
发明人： CHU, Chen Fu , LIU, Wen Huang , CHENG, Hao Chun
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/505 , H01L33/62 , H01L2224/48091 , H01L2924/00014
摘要： The invention relates to a vertical light emitting diode (VLED) having an outwardly disposed electrode, the vertical light emitting diode comprises a conductive base, a semiconductor epitaxial structure formed on the conductive base, a passivation layer formed at the periphery of the semiconductor epitaxial structure, and a conductive frame formed on the passivation layer and contacting with the edge of the upper surface of the semiconductor epitaxial structure such that the conductive frame is electrically connected to the semiconductor epitaxial structure.
摘要翻译：本发明涉及具有在向外设置的电极的垂直发光二极管（VLED），垂直发光二极管包括：导电基体，形成在导电性基体，在该半导体外延结构体的周围形成钝化层上的半导体外延结构和导电形成在钝化层上，并与检查的半导体外延结构的上表面的边缘接触并导电框的框架是电连接到所述半导体外延结构。

30. 发明公开

EP2472602A2 Vertical light emitting diode (VLED) die and method of fabrication 审中-公开
标题翻译： Vertikaler Leuchtdiodenchip（VLED）和Herstellungsverfahren
公开(公告)号：EP2472602A2
公开(公告)日：2012-07-04
申请号：EP11195788.2
申请日：2011-12-27
申请人： Semileds Optoelectronics Co., Ltd.
发明人： Chu, Jiunn-Yi , Chu, Chen-Fu , Cheng, Chao-Chen
IPC分类号： H01L33/00 , H01L33/40 , H01L33/64 , H01L33/38
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/20 , H01L33/647 , H01L2224/73265 , H01L2933/0016
摘要： A vertical light emitting diode "VLED" die (10) includes a first metal (12) having a first surface and an opposing second surface: a second metal (14) on the second surface of the first metal (12); a p-type semiconductor layer (16) on the first surface of the first metal (12); a multiple quantum well "MQW" layer (18) on the p-type semiconductor layer (16) configured to emit light: and an n-type semiconductor layer (20) on the multiple quantum well "MQW" layer (18).
摘要翻译：垂直发光二极管“VLED”管芯（10）包括具有第一表面和相对的第二表面的第一金属（12）;在第一金属（12）的第二表面上的第二金属（14）; 在第一金属（12）的第一表面上的p型半导体层（16）; 被配置为发光的p型半导体层（16）上的多量子阱“MQW”层（18）和在多量子阱“MQW”层（18）上的n型半导体层（20）。

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