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21. 发明申请

WO1997032330A1 ELECTRON-TUBE CATHODE 审中-公开
标题翻译：电子管阴极
公开(公告)号：WO1997032330A1
公开(公告)日：1997-09-04
申请号：PCT/JP1996000493
申请日：1996-02-29
申请人： MATSUSHITA ELECTRONICS CORPORATION , SAKURAI, Hiroshi , HAYASHIDA, Yoshiki , KUBO, Masayuki , YAMASHITA, Katsuyuki
发明人： MATSUSHITA ELECTRONICS CORPORATION
IPC分类号： H01J01/142
CPC分类号： H01J1/142
摘要： An electron-tube cathode made by forming on the base material an emitter mainly comprising alkaline earth metal oxides prepared by depositing carbonates of alkaline earth metals including at least barium on the base material and pyrolyzing the carbonates in a vacuum, wherein the carbonates comprise a mixture of at least two kinds of alkaline earth metal carbonate crystal grains having different configurations. The cathode is improved in both cut-off variation and emission characteristics and is useful as a cathode of CRTs and a cathode of electron tubes used as electron guns of electron microscopes.
摘要翻译：一种电子管阴极，其通过在基底材料上形成主要包含碱土金属氧化物的发射体，其通过在基底材料上沉积包括至少钡的碱土金属的碳酸盐和在真空中热解碳酸盐而制备，其中碳酸盐包含混合物的至少两种具有不同构型的碱土金属碳酸盐晶粒。阴极在截止变化和发射特性方面都得到改善，并且可用作CRT的阴极和用作电子显微镜的电子枪的电子管的阴极。

22. 发明申请

WO1997030793A1 LIQUID APPLICATION NOZZLE, METHOD OF MANUFACTURING SAME, LIQUID APPLICATION METHOD, LIQUID APPLICATION DEVICE, AND METHOD OF MANUFACTURING CATHODE-RAY TUBE 审中-公开
标题翻译：液体应用喷嘴，其制造方法，液体应用方法，液体应用装置和制造阴极射线管的方法
公开(公告)号：WO1997030793A1
公开(公告)日：1997-08-28
申请号：PCT/JP1997000462
申请日：1997-02-20
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. , MATSUSHITA ELECTRONICS CORPORATION , MITANI, Masato , NAKAJIMA, Kazuto , KOTANI, Hiroyuki , HOKAZONO, Nobutaka , NAKA, Hiroyuki , YAMAGUCHI, Akira , IKEDA, Junji , AOKI, Nobuyuki
发明人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. , MATSUSHITA ELECTRONICS CORPORATION
IPC分类号： B05C05/00
CPC分类号： B05B7/0884 , B05B7/02 , B05B7/025 , B05C5/02 , B05C5/0208 , B05C5/0254 , B05C5/027 , B05C11/08 , H01J9/227
摘要： Each of liquid application nozzles (4, 4a, 124) comprises a first block (41) having therein a liquid reservoir (43) extending in a longitudinal direction and an inner discharge portion composed of a multiplicity of small holes (44) formed in a bottom of the liquid reservoir (43) to extend along the longitudinal direction, a second block (42) having an inner space, which forms a gas reservoir (46) extending outside the first block (41) in the longitudinal direction, and an outer discharge portion composed of a multiplicity of small holes (48) and formed at the bottom of the inner space along the longitudinal direction and adapted to form a gas stream to surround from outside a linear-shaped liquid flow flowing down from the small holes (44), whereby a thin coating can be formed in a short time while suppressing consumption of a liquid and unevenness in coating is made hard to generate.
摘要翻译：每个液体施加喷嘴（4,4a，124）包括第一块（41），其中具有沿纵向方向延伸的液体储存器（43）和由多个形成在其中的多个小孔（44）组成的内部排出部分液体贮存器（43）的底部沿着纵向方向延伸，具有内部空间的第二块（42），其形成在纵向方向上延伸到第一块（41）外部的气体储存器（46）排出部分由多个小孔（48）组成，并且沿着纵向方向形成在内部空间的底部，并且适于形成气流以从从小孔（44）向下流动的线性液体流的外侧包围），由此能够在抑制液体的消耗的同时在短时间内形成薄膜，难以产生涂布不均匀。

23. 发明申请

WO1996034407A1 BOTTOM ELECTRODE STRUCTURE FOR DIELECTRIC CAPACITORS AND METHOD OF MAKING THE SAME 审中-公开
标题翻译：用于介电电容器的底部电极结构及其制造方法
公开(公告)号：WO1996034407A1
公开(公告)日：1996-10-31
申请号：PCT/US1996005867
申请日：1996-04-25
申请人： SYMETRIX CORPORATION , MATSUSHITA ELECTRONICS CORPORATION
发明人： SYMETRIX CORPORATION , MATSUSHITA ELECTRONICS CORPORATION , AZUMA, Masamichi , PAZ DE ARAUJO, Carlos , CUCHIARO, Joseph
IPC分类号： H01L21/3205
CPC分类号： H01L28/60
摘要： An integrated circuit capacitor (20) includes a bottom electrode structure (24) having an adhesion metal portion (34), a noble metal portion (36), and a second noble metal layer (40). A process of manufacture includes annealing the adhesion metal portion (34) and the noble metal portion (36) prior to the deposition of second noble metal layer (40) for purposes of forming barrier region (38). The electrode (24) preferably contacts metal oxide layer (26), which is made of a perovskite or perovskite-like layered superlattice material. A temporary capping layer (59) is formed and removed in manufacture, which serves to increase polarization potential from the device by at least 40 %.
摘要翻译：集成电路电容器（20）包括具有粘附金属部分（34），贵金属部分（36）和第二贵金属层（40）的底部电极结构（24）。制造方法包括为了形成阻挡区域（38）而在沉积第二贵金属层（40）之前退火附着金属部分（34）和贵金属部分（36）。电极（24）优选接触由钙钛矿或类钙钛矿层状超晶格材料制成的金属氧化物层（26）。在制造中形成和移除临时封盖层（59），其用于将器件的极化电位增加至少40％。

24. 发明申请

WO1996029728A1 INTEGRATED CIRCUITS HAVING MIXED LAYERED SUPERLATTICE MATERIALS AND PRECURSOR SOLUTIONS FOR USE IN A PROCESS OF MAKING THE SAME 审中-公开
标题翻译：具有混合层状超导材料的集成电路及其制造方法中使用的前驱体解决方案
公开(公告)号：WO1996029728A1
公开(公告)日：1996-09-26
申请号：PCT/US1996003523
申请日：1996-03-14
申请人： MATSUSHITA ELECTRONICS CORPORATION , SYMETRIX CORPORATION
发明人： MATSUSHITA ELECTRONICS CORPORATION , SYMETRIX CORPORATION , AZUMA, Masamichi , PAZ DE ARAUJO, Carlos, A. , MCMILLAN, Larry, D.
IPC分类号： H01L21/3205
CPC分类号： C23C16/448 , C04B35/62227 , C23C16/45561 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C30B7/00 , C30B7/005 , C30B29/68 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/40 , H01L28/55 , H01L28/56 , H01L28/60
摘要： Metal alkoxycarboxylate-based liquid precursor solutions are used to form electronic devices (100) that include mixed layered superlattice materials (112) of a type having discrete oxygen octahedral layers (124 and 128) collated with a superlattice-generator layer (116). The precursor solutions include a plurality of metal moieties in effective amounts for yielding the layered superlattice materials. These metal moieties are mixed to include an A/B portion capable of forming an A/B layer (124), a perovskite-like AB layer portion capable of forming a perovskite-like AB octahedral layer (128), and a superlattice-generator portion capable of forming the superlattice-generator layer (116). The precursors are deposited in liquid form upon a substrate and annealed to provide the layered superlattice materials.
摘要翻译：使用基于金属烷氧基羧酸盐的液体前体溶液形成电子器件（100），其包括具有与超晶格 - 发生器层（116）对照的离散氧八面体层（124和128）的混合层状超晶格材料（112）。前体溶液包括有效量的用于产生层状超晶格材料的多个金属部分。这些金属部分被混合以包括能够形成A / B层（124）的A / B部分，能形成钙钛矿型AB八面体层（128）的钙钛矿型AB层部分，以及超晶格发生器部分能够形成超晶格 - 发生器层（116）。前体以液体形式沉积在基底上并退火以提供层状超晶格材料。

25. 发明申请

WO1996029726A1 UV RADIATION PROCESS FOR MAKING ELECTRONIC DEVICES HAVING LOW-LEAKAGE-CURRENT AND LOW-POLARIZATION FATIGUE 审中-公开
标题翻译：用于制造具有低漏电流和低极化疲劳的电子器件的紫外线辐射方法
公开(公告)号：WO1996029726A1
公开(公告)日：1996-09-26
申请号：PCT/US1996003521
申请日：1996-03-14
申请人： SYMETRIX CORPORATION , MATSUSHITA ELECTRONICS CORPORATION
发明人： SYMETRIX CORPORATION , MATSUSHITA ELECTRONICS CORPORATION , AZUMA, Masamichi , MCMILLAN, Larry, D. , PAZ DE ARAUJO, Carlos, A. , SCOTT, Michael, C.
IPC分类号： H01L21/3205
CPC分类号： H01L21/31691 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C18/14 , C30B7/00 , C30B29/68 , H01L27/10805 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60
摘要： A precursor solution (P22) formed of a liquid polyoxyalkylated metal complex in a solvent is applied to a substrate in the formation of a metal oxide thin film (P26). The liquid thin film is baked (P28) in air to a temperature up to 500 DEG C while UV radiation having a wavelength ranging from 180 nm to 300 nm is applied. The thin film can be twice-baked at increasing temperatures while UV radiation is applied at one or both bakings. The film is then annealed (P32) at temperature ranging from about 700 DEG C to 850 DEG C to produce a thin-film solid metal oxide product. Alternatively, the UV radiation may be applied to the liquid precursor, the thin film may be annealed with UV radiation, or combinations of such applications of UV radiation to the precursor, to the thin film before or after baking, and/or UV annealing may be used.
摘要翻译：在溶剂中由液态聚氧化烷基化金属络合物形成的前体溶液（P22）在金属氧化物薄膜（P26）的形成中被施加到基板上。将液体薄膜在空气中烘烤（P28）到高达500℃的温度，同时施加波长范围为180nm至300nm的UV辐射。薄膜可以在增加的温度下进行两次烘烤，同时在一个或两个烘烤处施加UV辐射。然后将膜在约700℃至850℃的温度范围内退火（P32）以产生薄膜固体金属氧化物产物。或者，UV辐射可以施加到液体前体，薄膜可以在紫外线辐射之前或UV辐射的这种应用的组合与前体一起退火到烘烤之前或之后的薄膜，和/或UV退火使用。

26. 发明申请

WO1998011603A1 LIQUID SOURCE FORMATION OF THIN FILMS USING HEXAMETHYL-DISILAZANE 审中-公开
标题翻译：液体源形成薄膜使用十六烷基 - 二甲苯
公开(公告)号：WO1998011603A1
公开(公告)日：1998-03-19
申请号：PCT/US1997014452
申请日：1997-08-18
申请人： SYMETRIX CORPORATION , MATSUSHITA ELECTRONICS CORPORATION
发明人： SYMETRIX CORPORATION , MATSUSHITA ELECTRONICS CORPORATION , DERBENWICK, Gary, F. , MCMILLAN, Larry, D. , SOLAYAPPAN, Narayan , SCOTT, Michael, C. , PAZ DE ARAUJO, Carlos, A. , HAYASHI, Shinichiro
IPC分类号： H01L21/316
CPC分类号： H01L21/31691 , C23C18/1216 , C23C18/1225
摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, a substrate (5, 858) is placed within a vacuum deposition chamber (2), a small amount of hexamethyl-disilazane is added to the precursor liquid, is misted, and the mist is flowed into the deposition chamber to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film (506, 860) of a layered superlattice material, such as strontium bismuth tantalate, on the substrate. Then an integrated circuit (600, 850) is completed to include at least a portion of the layered superlattice material film in a component (604, 872) of the integrated circuit.
摘要翻译：制备在二甲苯/甲基乙基酮溶剂中包含若干金属2-乙基己酸酯如锶，钽和2-乙基己酸铋的前体液体，将基材（5,858）置于真空沉积室（2）内，少量的六甲基二硅氮烷被加入到前体液体中，被雾化，并且雾气流入沉积室以将一层前体液体沉积在基底上。将液体干燥，烘烤和退火，以在衬底上形成层状超晶格材料（例如钽酸锶锶）的薄膜（506,860）。然后，完成集成电路（600,850），以将集成电路的部件（604,872）中的至少一部分分层超晶格材料膜包括在内。

27. 发明申请

WO1997040531A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO1997040531A1
公开(公告)日：1997-10-30
申请号：PCT/JP1997001347
申请日：1997-04-18
申请人： MATSUSHITA ELECTRONICS CORPORATION , HIRANO, Hiroshige , TAKEO, Masato
发明人： MATSUSHITA ELECTRONICS CORPORATION
IPC分类号： H01L21/822
CPC分类号： H01L27/11502 , H01L27/10805
摘要： Purpose: The characteristic variation of a ferroelectric capacitor of a semiconductor device is reduced and the characteristic variation, namely, the characteristic deterioration with time of the capacitor is suppressed. Constitution: The capacitor is constituted of lower electrode (111a) having a planar shape which extends in a first direction D1 and having a width in a second direction D2 perpendicular to the first direction D1, a plurality of upper electrodes (112a) which are arranged above the electrode (111a) so that the electrodes (112a) are opposed to the electrodes (111a), and ferroelectric layers arranged between both electrodes (111a and 112a). The dimensions of the electrodes (112a) in the first direction D1 are smaller than those in the second direction D2.
摘要翻译：目的：减小半导体器件的铁电电容器的特性变化，并且抑制特性变化，即电容器的特性劣化随时间变化。结构：电容器由平面形状的下电极（111a）构成，所述下电极（111a）在第一方向D1上延伸并且具有与第一方向D1垂直的第二方向D2的宽度;多个上电极（112a）在电极（111a）的上方，电极（112a）与电极（111a）相对，铁电层配置在两电极（111a，112a）之间。第一方向D1上的电极（112a）的尺寸小于第二方向D2的尺寸。

28. 发明申请

WO1997033310A1 METHODS AND APPARATUS FOR MATERIAL DEPOSITION USING PRIMER 审中-公开
标题翻译：使用PRIMER的材料沉积的方法和装置
公开(公告)号：WO1997033310A1
公开(公告)日：1997-09-12
申请号：PCT/US1997003046
申请日：1997-03-04
申请人： SYMETRIX CORPORATION , MATSUSHITA ELECTRONICS CORPORATION
发明人： SYMETRIX CORPORATION , MATSUSHITA ELECTRONICS CORPORATION , HAYASHI, Shinichiro , MCMILLAN, Larry, D. , AZUMA, Masamichi , PAZ DE ARAUJO, Carlos, A.
IPC分类号： H01L21/3205
CPC分类号： H01L21/31691
摘要： A liquid primer is misted, flowed into a deposition chamber (2) and deposited on a substrate (5). A liquid precursor (64) is misted, flowed into a deposition chamber (2) and deposited on the substrate (5). The primer and precursor are dried to form a solid thin film, which is then annealed to form a part of an electronic component (1112) in an integrated circuit (1110), such as the dielectric (1130) in a memory cell. The primer is a solvent, and the precursor includes a metal carboxylate, a metal alkoxide, or a metal alkoxycarboxylate in a precursor solvent. Preferably, the primer and the precursor solvent are the same solvent, such as 2-methodyethanol, xylenes, n-butyl acetate or hexymethyl-disilazane.
摘要翻译：液体底漆被雾化，流入沉积室（2）并沉积在基底（5）上。液体前体（64）被雾化，流入沉积室（2）并沉积在基底（5）上。将底漆和前体干燥以形成固体薄膜，然后将其退火以在集成电路（1110）中形成电子部件（1112）的一部分，例如存储器单元中的电介质（1130）。引物是溶剂，前体在前体溶剂中包括金属羧酸盐，金属醇盐或烷氧基羧酸金属盐。优选地，底漆和前体溶剂是相同的溶剂，例如2-甲醇，二甲苯，乙酸正丁酯或羟甲基 - 二硅氮烷。

29. 发明申请

WO1997027346A1 MISTED PRECURSOR DEPOSITION METHOD AND APPARATUS WITH UV RADIATION APPLIED TO MIST 审中-公开
标题翻译：有前兆的沉积方法和应用于薄雾的紫外线辐射的装置
公开(公告)号：WO1997027346A1
公开(公告)日：1997-07-31
申请号：PCT/US1997001055
申请日：1997-01-24
申请人： SYMETRIX CORPORATION , MATSUSHITA ELECTRONICS CORPORATION
发明人： SYMETRIX CORPORATION , MATSUSHITA ELECTRONICS CORPORATION , HAYASHI, Shinichiro , McMILLAN, Larry, D. , PAZ DE ARAUJO, Carlos, A.
IPC分类号： C23C26/02
CPC分类号： C23C18/1216 , B05D1/00 , B05D1/60 , B05D3/0493 , B05D3/062 , B05D3/065 , C23C8/10 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/14 , C23C26/02 , C30B7/00 , C30B7/005 , C30B29/68 , H01L21/31691 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60 , H01L41/1871 , H01L41/317 , H05K3/105
摘要： UV radiation is applied to a substrate in a deposition chamber to desorb water and other contaminates from it. A liquid precursor is misted, flowed into the deposition chamber and deposited on a substrate while UV radiation is applied to the mist. The film of liquid on the substrate is dried and annealed on the substrate while the UV radiation is applied to form a solid thin film of a metal oxide. The thin film is then incorporated into an electronic device of an integrated circuit fabricated on the substrate. The application of UV radiation to both the mist during deposition and the thin film after deposition significantly increases the quality of the resulting integrated circuits. The process has been found to be particularly excellent for making BST, strontium bismuth tantalate, and strontium bismuth niobate.
摘要翻译：将UV辐射施加到沉积室中的基底以从其中解吸水和其它污染物。液体前体被雾化，流入沉积室并沉积在基底上，同时将紫外线辐射施加于雾。将衬底上的液体膜干燥并在衬底上退火，同时施加UV辐射以形成金属氧化物的固体薄膜。然后将薄膜并入到在衬底上制造的集成电路的电子器件中。在沉积期间将UV辐射施加到雾和沉积后的薄膜显着增加了所得到的集成电路的质量。已经发现该方法对于制备BST，钽酸锶锶和铌酸铋锶特别优异。

30. 发明申请

WO1984001238A1 IN-LINE TYPE ELECTRON GUN 审中-公开
标题翻译：在线式电子枪
公开(公告)号：WO1984001238A1
公开(公告)日：1984-03-29
申请号：PCT/JP1983000308
申请日：1983-09-14
申请人： MATSUSHITA ELECTRONICS CORPORATION , ASHIZAKI, Shigeya , NATSUHARA, Masao , SUGAHARA, Koichi , MURANISHI, Hideo
发明人： MATSUSHITA ELECTRONICS CORPORATION
IPC分类号： H01J29/50
CPC分类号： H01J29/503
摘要： An in-line type electron gun comprises a control electrode (12) and an accelerating electrode (13) having side beam holes (16b), (16c) arranged so that the central axes (18b), (18c) common to the holes (16b), (16c) are displaced from the central axes (21b), (21c) of the holes at the end face of the accelerating electrodes of a focusing electrode (14), a final accelerating electrode (15) having side beam holes (23b), (23c) common to the central axes (24b), (24c) at the opposite end faces of the electrodes (14), (15) so that the central axes (24b), (24c) are displaced from the central axes (18b), (18c) common to the side beam holes (16b), (16c) of the electrodes (12), (13) toward the tubular axis (19) side.

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