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    • 23. 发明申请
    • CHARGED PARTICLE OPTICAL SYSTEM WITH MULTIPLE BEAMS
    • 带有多光束的带电粒子光学系统
    • WO2011034428A1
    • 2011-03-24
    • PCT/NL2010/050603
    • 2010-09-17
    • MAPPER LITHOGRAPHY IP B.V.KRUIT, PieterZONNEVYLLE, Aernout, Christiaan
    • KRUIT, PieterZONNEVYLLE, Aernout, Christiaan
    • H01J37/317H01J37/147
    • H01J37/3174B82Y10/00B82Y40/00H01J37/12H01J37/1477H01J2237/0435H01J2237/04924H01J2237/1205
    • The invention relates to a multiple beam charged particle optical system comprising: a charged particle source for generating a plurality of charged particle beamlets, and charged particle optics for directing the charged particle beamlets from the charged particle source towards a target, wherein each charged particle beamlet defines a beamlet centre line,said charged particle optics comprising one or more electrostatic lens arrays, each comprising two or more array electrodes for generating a plurality of electrostatic lenslets,wherein each lenslet is arranged for focusing a corresponding charged particle beamlet, and wherein each lenslet defines a lenslet optical axis,wherein at least one of said one or more electrostatic lens arrays comprises one or more off-axis electrostatic lenslets, wherein the beamlet centre line of the corresponding charged particle beamlet passes through said off-axis electrostatic lenslet at a distance from its lenslet optical axis.
    • 本发明涉及多束带电粒子光学系统,其包括:用于产生多个带电粒子子束的带电粒子源,以及用于将来自带电粒子源的带电粒子子束朝向 目标,其中每个带电粒子小射束限定小射束中心线,所述带电粒子光学器件包括一个或多个静电透镜阵列,每个静电透镜阵列包括用于产生多个静电小透镜的两个或更多个阵列电极,其中每个小透镜被布置用于聚焦对应的 并且其中每个小透镜限定小透镜光轴,其中所述一个或多个静电透镜阵列中的至少一个包括一个或多个离轴静电小透镜,其中对应的带电粒子小射束的小射束中心线穿过所述带电粒子小射束 离轴小静电小透镜与小透镜光轴相距一定距离。
    • 28. 发明申请
    • PROJECTION LENS ARRANGEMENT
    • 投影镜头布置
    • WO2009127658A1
    • 2009-10-22
    • PCT/EP2009/054467
    • 2009-04-15
    • MAPPER LITHOGRAPHY IP B.V.WIELAND, Jan, JacoVAN VEEN, Alexander, Hendrik, Vincent
    • WIELAND, Jan, JacoVAN VEEN, Alexander, Hendrik, Vincent
    • H01J37/317
    • H01J37/3177B82Y10/00B82Y40/00H01J37/3007H01J2237/0492H01J2237/10H01J2237/15
    • The invention relates to a charged particle multi-beamlet system for exposing a target (11) using a plurality of beamlets (21). The system has a charged particle source (1), an aperture array (4), a beamlet manipulator, a beamlet blanker (6), and an array of projection lens systems. The charged particle source (1) is configured to generate a charged particle beam (20). The aperture array (4) is configured to define separate beamlets (21) from the generated beam. The beamlet manipulator is configured to converge groups of the beamlets towards a common point of convergence for each group. The beamlet blanker (6) is configured to controllably blank beamlets in the groups of beamlets. Finally, the array of projection lens systems (10) is configured to project unblanked beamlets of the groups of beamlets on to the surface of the target (11). The beamlet manipulator is further adapted to converge each of the groups of beamlets towards a point corresponding to one of the projection lens systems.
    • 本发明涉及一种使用多个子束(21)曝光目标(11)的带电粒子多子束系统。 该系统具有带电粒子源(1),孔径阵列(4),子束操纵器,子束消除器(6)和投影透镜系统阵列。 带电粒子源(1)被配置为产生带电粒子束(20)。 光圈阵列(4)被配置为从所生成的光束中确定不同的子束(21)。 子束操纵器被配置为将每个子束的组合朝向每个组的公共收敛点收敛。 子束消除器(6)被配置为可控地遮挡子束组中的子束。 最后,投影透镜系统(10)的阵列被配置成将子束组的未平片子束投影到目标(11)的表面上。 子束操纵器还适于将每个子束组朝向对应于投影透镜系统中的一个的点聚焦。
    • 30. 发明申请
    • CHARGED PARTICLE BEAMLET EXPOSURE SYSTEM
    • 充电颗粒光束曝光系统
    • WO2004107050A2
    • 2004-12-09
    • PCT/NL2004/000381
    • 2004-05-27
    • MAPPER LITHOGRAPHY IP B.V.KRUIT, PieterWIELAND, Marco, Jan-Jaco
    • KRUIT, PieterWIELAND, Marco, Jan-Jaco
    • G03F7/00
    • H01J37/3007B82Y10/00B82Y40/00H01J37/045H01J37/3174H01J37/3177H01J2237/0435H01J2237/045H01J2237/0453H01J2237/0492H01J2237/1501
    • The invention relates to a charged-particle-optical system for a charged particle beam exposure apparatus, said system comprising: - a first aperture means comprising at least a first substantially round aperture for partially shielding an emitted charged particle beam for forming a charged particle beamlet; - a lens system comprising at least one lens for focussing a charged particle beamlet from said first aperture within or in the vicinity of an image focal plane of said lens; - a deflector means, substantially located in said image focal plane, comprising at least one beamlet deflector for the deflection of a passing charged particle beamlet upon the reception of a control signal, and - a second aperture means comprising at least one second substantially round aperture positioned in the conjugate plane of the first aperture, and said second aperture being aligned with said first aperture and said beamlet deflector for blocking said charged particle beamlet upon deflection by said beamlet deflector and to transmit it otherwise.
    • 本发明涉及一种用于带电粒子束曝光装置的带电粒子光学系统,所述系统包括: - 第一孔径装置,其包括至少第一基本上圆形的孔,用于部分屏蔽发射的带电粒子束以形成带电粒子束 ; - 透镜系统,包括至少一个透镜,用于聚焦所述透镜的图像焦平面内或附近的来自所述第一孔的带电粒子束; - 基本上位于所述图像焦平面中的偏转器装置,包括至少一个子束偏转器,用于在接收到控制信号时偏转通过的带电粒子子束;以及 - 第二孔装置,包括至少一个第二基本上圆形的孔 定位在第一孔的共轭平面中,并且所述第二孔与所述第一孔和所述小梁偏转器对准,用于在所述子束偏转器偏转时阻挡所述带电粒子子束,否则传递。