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241. 发明授权

US07029724B1 Composition and method for forming doped A-site deficient thin-film manganate layers on a substrate 失效
标题翻译：在基板上形成掺杂的A位缺陷薄膜锰酸盐层的组合物和方法
公开(公告)号：US07029724B1
公开(公告)日：2006-04-18
申请号：US09620162
申请日：2000-07-20
申请人： Thomas H. Baum , Galena Doubinina , Daniel Studebaker
发明人： Thomas H. Baum , Galena Doubinina , Daniel Studebaker
IPC分类号： C23C16/40 , C23C16/448 , B05D3/02
CPC分类号： C23C16/40 , Y10S427/101 , Y10T428/1107
摘要： A method of forming an A site deficient thin film manganate material on a substrate from corresponding precursor(s), comprising liquid delivery and flash vaporization thereof to yield a precursor vapor, and transporting the precursor vapor to a chemical vapor deposition reactor for formation of an A site deficient manganate thin film on a substrate. The invention also contemplates a device comprising an A site deficient manganate thin film, wherein the manganate layer is formed on the substrate by such a process and is of the formula LaxMyMnO3, where M=Mg, Ca, Sr, or Ba, and (x+y)
摘要翻译：一种从相应的前体在基材上形成A位缺陷的薄膜锰酸盐材料的方法，包括液体输送和闪蒸，以产生前体蒸气，并将前体蒸气输送到化学气相沉积反应器中以形成在基板上存在缺陷的锰酸盐薄膜。本发明还考虑了一种包含A位缺陷锰酸盐薄膜的器件，其中通过这种方法在衬底上形成锰酸盐层，并且具有下式La x Si x Y > MnO 3，其中M = Mg，Ca，Sr或Ba，和（x + y）<1.0，优选约0.5至约0.99。

242. 发明授权

US06989457B2 Chemical vapor deposition precursors for deposition of tantalum-based materials 有权
公开(公告)号：US06989457B2
公开(公告)日：2006-01-24
申请号：US10345616
申请日：2003-01-16
申请人： Smuruthi Kamepalli , Thomas H. Baum
发明人： Smuruthi Kamepalli , Thomas H. Baum
IPC分类号： C07F9/00 , H01L21/44 , B05D1/02 , C23C14/26
CPC分类号： C23C16/18 , C07F17/00 , C23C16/34
摘要： Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds are silylated to constitute tantalum/silicon source reagents. The precursors of the invention are advantageously employed in semiconductor manufacturing applications to form diffusion barriers in connection with copper metallization of the semiconductor device structure.

243. 发明授权

US06936542B2 Polishing slurries for copper and associated materials 有权
标题翻译：抛光用于铜和相关材料的浆料
公开(公告)号：US06936542B2
公开(公告)日：2005-08-30
申请号：US10022317
申请日：2001-12-18
申请人： William A. Wojtczak , Thomas H. Baum , Long Nguyen , Cary Regulski
发明人： William A. Wojtczak , Thomas H. Baum , Long Nguyen , Cary Regulski
IPC分类号： C09C1/68 , C09G1/02 , H01L21/321 , H01L21/302
CPC分类号： H01L21/3212 , C09G1/02
摘要： A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
摘要翻译：一种化学机械抛光浆料和使用该浆料抛光铜，阻挡材料和电介质材料的方法，该方法包括第一和第二浆料。第一种浆料对铜的去除率高，在阻隔材料上的去除率低。第二种浆料对阻隔材料的去除率高，对铜和介电材料的去除率低。第一和第二浆料至少包括二氧化硅颗粒，氧化剂，腐蚀抑制剂和清洁剂。

244. 发明授权

US06909839B2 Delivery systems for efficient vaporization of precursor source material 有权
公开(公告)号：US06909839B2
公开(公告)日：2005-06-21
申请号：US10625179
申请日：2003-07-23
申请人： Luping Wang , Thomas H. Baum , Chongying Xu
发明人： Luping Wang , Thomas H. Baum , Chongying Xu
IPC分类号： B01D1/00 , B01D7/00 , C23C14/00 , C23C16/00 , C23C16/448
CPC分类号： C23C16/4481 , B01D1/0082
摘要： The present invention relates to a delivery system for vaporizing and delivering vaporized solid and liquid precursor materials at a controlled rate having particular utility for semiconductor manufacturing applications. The system includes a vaporization vessel, a processing tool and a connecting vapor line therebetween, where the system further includes an input flow controller and/or an output flow controller to provide a controlled delivery of a vaporizable source material to the vaporization vessel and a controlled flow rate of vaporized source material to the processing tool.

245. 发明授权

US06800218B2 Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same 有权
标题翻译：铜和相关材料的化学机械抛光的无磨料配方及其使用方法
公开(公告)号：US06800218B2
公开(公告)日：2004-10-05
申请号：US09935805
申请日：2001-08-23
申请人： Ying Ma , Michael Jones , Thomas H. Baum , Deepak Verma , David Bernhard
发明人： Ying Ma , Michael Jones , Thomas H. Baum , Deepak Verma , David Bernhard
IPC分类号： C09K1300
CPC分类号： C23F3/06 , C09G1/04 , H01L21/3212
摘要： An abrasive free formulation for chemical mechanical polishing and method for using the formulation for polishing copper and related materials. The abrasive free formulation has a high removal rate on copper and a low removal rate on barrier material. The abrasive free formulation comprises at least an oxidizing agent and an activating agent.
摘要翻译：用于化学机械抛光的无磨料配方以及使用该配方抛光铜及相关材料的方法。无磨料制剂对铜的去除率高，对阻隔材料的去除率低。无磨料制剂至少包含氧化剂和活化剂。

246. 发明授权

US06527819B2 Polishing slurries for copper and associated materials 有权
公开(公告)号：US06527819B2
公开(公告)日：2003-03-04
申请号：US10022308
申请日：2001-12-18
申请人： William A. Wojtczak , Thomas H. Baum , Long Nguyen , Cary Regulski
发明人： William A. Wojtczak , Thomas H. Baum , Long Nguyen , Cary Regulski
IPC分类号： C09G102
CPC分类号： H01L21/3212 , C09G1/02
摘要： A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.

247. 发明授权

US06504015B2 Tetrahydrofuran-adducted group II &bgr;-diketonate complexes as source reagents for chemical vapor deposition 失效
标题翻译：四氢呋喃加成的II族β-二酮络合物作为化学气相沉积的原料
公开(公告)号：US06504015B2
公开(公告)日：2003-01-07
申请号：US09791005
申请日：2001-02-22
申请人： Thomas H. Baum , Witold Paw
发明人： Thomas H. Baum , Witold Paw
IPC分类号： C07F500
CPC分类号： C07F3/003 , C23C16/409
摘要： Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate adducts of the formula M(&bgr;-diketonate)2(L)4 wherein M is the Group II metal and L is tetrahydrofuran. Such source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II thin films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.
摘要翻译：描述了II类金属MOCVD前体组合物用于相应的含II族金属膜的MOCVD。络合物是式M（β-二酮酸酯）2（L）4的II族金属β-二酮加成物，其中M是第II族金属，L是四氢呋喃。钡和锶的这种源试剂络合物可用于形成钛酸锶钡和其他用于微电子器件应用的基板上的II类薄膜，例如集成电路，铁电存储器，开关，辐射检测器，薄膜电容器，微机电结构（MEMS）和全息存储介质。

248. 发明授权

US06409781B1 Polishing slurries for copper and associated materials 有权
公开(公告)号：US06409781B1
公开(公告)日：2002-06-25
申请号：US09562298
申请日：2000-05-01
申请人： William A. Wojtczak , Thomas H. Baum , Long Nguyen , Cary Regulski
发明人： William A. Wojtczak , Thomas H. Baum , Long Nguyen , Cary Regulski
IPC分类号： C09K314
CPC分类号： H01L21/3212 , C09G1/02
摘要： A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.

249. 发明授权

US6117571A Compositions and method for forming doped A-site deficient thin-film manganate layers on a substrate 失效
标题翻译：在衬底上形成掺杂的A位缺陷薄膜锰酸盐层的组合物和方法
公开(公告)号：US6117571A
公开(公告)日：2000-09-12
申请号：US825480
申请日：1997-03-28
申请人： Thomas H. Baum , Galena Doubinina , Daniel Studebaker
发明人： Thomas H. Baum , Galena Doubinina , Daniel Studebaker
IPC分类号： C23C16/40 , B32B9/00 , H01F1/00
CPC分类号： C23C16/40 , Y10S427/101 , Y10T428/1107
摘要： A method of forming an A site deficient thin film manganate material on a substrate from corresponding precursor(s), comprising liquid delivery and flash vaporization thereof to yield a precursor vapor, and transporting the precursor vapor to a chemical vapor deposition reactor for formation of an A site deficient manganate thin film on a substrate. The invention also contemplates a device comprising an A site deficient manganate thin film, wherein the manganate layer is formed on the substrate by such a process and is of the formula La.sub.x M.sub.y MnO.sub.3, where M=Mg, Ca, Sr, or Ba, and (x+y)
摘要翻译：一种从相应的前体在基材上形成A位缺陷的薄膜锰酸盐材料的方法，包括液体输送和闪蒸，以产生前体蒸气，并将前体蒸气输送到化学气相沉积反应器中以形成在基板上存在缺陷的锰酸盐薄膜。本发明还考虑了一种包含A位缺陷锰酸盐薄膜的器件，其中通过这种方法在衬底上形成锰酸盐层，并且具有式Lax MyMnO 3，其中M = Mg，Ca，Sr或Ba，和（ x + y）<1.0，优选约0.5至约0.99。

250. 发明授权

US6111122A Group II MOCVD source reagents, and method of forming Group II metal-containing films utilizing same 失效
标题翻译： II族MOCVD源试剂，以及使用其形成含有II族金属的膜的方法
公开(公告)号：US6111122A
公开(公告)日：2000-08-29
申请号：US67557
申请日：1998-04-28
申请人： Witold Paw , Thomas H. Baum
发明人： Witold Paw , Thomas H. Baum
IPC分类号： C07F3/00 , C23C16/40 , C07F9/00 , C23C8/00
CPC分类号： C07F3/003 , C23C16/408 , C23C16/409
摘要： Novel Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal .beta.-diketonate Lewis base adducts having ligands such as: (i) amines bearing terminal NH.sub.2 groups; (ii) imine ligands formed as amine (i)/carbonyl reaction products; (iii) combination of two or more of the foregoing ligands (i)-(ii), and (iv) combination of one or more of the foregoing ligands (i)-(ii) with one or more other ligands or solvents. The source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II doped thin-films on substrates for microelectronic device applications, such as intearated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holoaraphic storage media.
摘要翻译：描述了新的第II族金属MOCVD前体组合物用于相应的含II族金属膜的MOCVD。络合物是具有配体的II族金属β-二酮基路易斯碱加成物，其具有：（i）带有末端NH 2基团的胺; （ii）以胺（i）/羰基反应产物形成的亚胺配体; （iii）上述配体（i） - （ii）中的两种或更多种的组合，和（iv）一种或多种前述配体（i） - （ii）与一种或多种其它配体或溶剂的组合。钡和锶的源试剂络合物可用于形成钛酸钡锶和其他第II类掺杂的薄膜，用于微电子器件应用的基板上，例如有线电路，铁电存储器，开关，辐射探测器，薄膜电容器，微机电结构（MEMS）和全息存储介质。

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