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11. 发明申请

US20060138443A1 Encapsulation and packaging of ultraviolet and deep-ultraviolet light emitting diodes 审中-公开
标题翻译：紫外线和深紫外线发光二极管的封装和封装
公开(公告)号：US20060138443A1
公开(公告)日：2006-06-29
申请号：US11020762
申请日：2004-12-23
申请人： Zhaoyang Fan , Hongxing Jiang , Jingyu Lin
发明人： Zhaoyang Fan , Hongxing Jiang , Jingyu Lin
IPC分类号： H01L33/00 , H01L29/24
CPC分类号： H01L33/56 , H01L33/58 , H01L2224/48091 , H01L2224/48247 , H01L2924/01322 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： Disclosed are the materials and methods used to package and encapsulate UV and DUV LEDs. These LEDs have emission wavelengths in the range from around 360 nm to around 200 nm. The UV/DUV LED die or its flip-chip bonded subassembly are disposed in a low thermal resistance packaging house. Either the whole package or just the UV/DUV LED is globed with a UV/DUV transparent dome-shape encapsulation. This protects the device, enhances light extraction, and focuses the light emitted. The dome-shape encapsulation may be comprised of optically transparent PMMA, fluorinated polymers or other organic materials. Alternatively it might be configured having a lens made from sapphire, fused silica or other transparent materials. The lens material is cemented on the UV/DUV LED with UV/DUV transparent polymers.
摘要翻译：披露的是用于封装和封装UV和DUV LED的材料和方法。这些LED具有在约360nm至约200nm范围内的发射波长。 UV / DUV LED芯片或其倒装芯片接合子组件设置在低热阻包装室内。整个封装或只是UV / DUV LED都采用UV / DUV透明的圆顶形封装。这样可以保护设备，增强光线提取，并对发出的光线进行聚焦。圆顶形包封可以由光学透明的PMMA，氟化聚合物或其它有机材料组成。或者，其可以被配置为具有由蓝宝石，熔融石英或其它透明材料制成的透镜。透镜材料用UV / DUV透明聚合物胶合在UV / DUV LED上。

12. 发明授权

US08272757B1 Light emitting diode lamp capable of high AC/DC voltage operation 有权
标题翻译：发光二极管灯能够实现高交流/直流电压工作
公开(公告)号：US08272757B1
公开(公告)日：2012-09-25
申请号：US11144982
申请日：2005-06-03
申请人： Zhaoyang Fan , Hongxing Jiang , Jingyu Lin
发明人： Zhaoyang Fan , Hongxing Jiang , Jingyu Lin
IPC分类号： F21V9/00
CPC分类号： H01L25/0753 , H01L33/62 , H01L2224/16225 , H05B33/0821
摘要： A solid-state LED lighting lamp (SSL-LED lamp), based on AC or DC-emitters, which runs under a high AC or DC voltage, with high light generation capability, high reliability and long lifespan, is disclosed. A plurality of AC or DC-emitter chips are integrated on a thermally conductive submount and the electrically conductive element pathways on the submount provide electrical interconnections between the mounted chips and also between the individual LEDs on each chip. The conducting elements also provide redundant current paths at the AC or DC-emitter chip level and individual LED level. Depending on the detail design, the LED SSL-lamp may be directly powered by an AC voltage (i.e. 110/120V or 220/240V power grid) or a high DC voltage. With this design, the LED SSL-lamp can provide sufficient illumination to replace the incandescent or florescent light bulbs for general lighting purpose. The distributed emitter array design ensures the heat dissipation. The redundant current path design ensures the long lifespan and high reliability.
摘要翻译：公开了一种基于AC或DC发射器的固态LED照明灯（SSL-LED灯），其以高交流或直流电压运行，具有高发光能力，高可靠性和长寿命。多个AC或DC发射器芯片集成在导热基座上，并且底座上的导电元件通路在安装的芯片之间以及每个芯片上的各个LED之间提供电互连。导电元件还在AC或DC发射极芯片级和单独的LED电平处提供冗余电流路径。根据细节设计，LED SSL灯可以由AC电压（即110 / 120V或220 / 240V电网）或高DC电压直接供电。通过这种设计，LED SSL灯可以提供足够的照明来替代用于一般照明目的的白炽灯或荧光灯泡。分布式发射极阵列设计确保散热。冗余电流路径设计确保了长寿命和高可靠性。

13. 发明授权

US07221044B2 Heterogeneous integrated high voltage DC/AC light emitter 有权
标题翻译：异质集成高压直流/交流发光二极管
公开(公告)号：US07221044B2
公开(公告)日：2007-05-22
申请号：US11040445
申请日：2005-01-21
申请人： Zhaoyang Fan , Hongxing Jiang , Jingyu Lin
发明人： Zhaoyang Fan , Hongxing Jiang , Jingyu Lin
IPC分类号： H01L23/495
CPC分类号： H01L27/153 , F21K9/00 , H01L27/156 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/11 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A single-chip integrated LED particularly adapted for direct use with a high voltage DC or AC power sources comprises a plurality of electrically isolated LEDs on a generally transparent substrate and bonded to electrically conductive elements on a thermally conductive mount. A reflective coating may be applied to the area between LEDs.
摘要翻译：特别适用于高压直流或交流电源直接使用的单芯片集成LED包括多个电绝缘的LED，其通常在透明基板上并与导热支架上的导电元件结合。可以将反射涂层施加到LED之间的区域。

14. 发明申请

US20060169993A1 Micro-LED based high voltage AC/DC indicator lamp 有权
公开(公告)号：US20060169993A1
公开(公告)日：2006-08-03
申请号：US11102273
申请日：2005-04-08
申请人： Zhaoyang Fan , Hongxing Jiang , Jingyu Lin
发明人： Zhaoyang Fan , Hongxing Jiang , Jingyu Lin
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , F21K9/00 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： An AC/DC indicator lamp based on an array of micro-LEDs may be powered by a standard high voltage AC or DC power source. The indicator lamp has a low power consumption. The micro-LEDs are serially connected on a substrate with the total device area and power consumption compatible with a standard DC low voltage LED. A plurality of indicator lamps may be connected together in parallel to present a string of indicator lamps.

15. 发明申请

US20130292685A1 Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures 审中-公开
标题翻译：基于氮化硼和氮化硼 - 氮化物氮化物异质结构的结构和器件
公开(公告)号：US20130292685A1
公开(公告)日：2013-11-07
申请号：US13464977
申请日：2012-05-05
申请人： Hongxing Jiang , Sashikanth Majety , Rajendra Dahal , Jing Li , Jingyu Lin
发明人： Hongxing Jiang , Sashikanth Majety , Rajendra Dahal , Jing Li , Jingyu Lin
IPC分类号： H01L31/0304 , H01L31/18
CPC分类号： H01L31/0304 , B82Y20/00 , H01L31/035236 , H01L31/105 , H01L31/108 , H01L31/1085 , H01L31/115 , Y02E10/544 , Y02P70/521
摘要： The present invention relates to optoelectronic device layer structures, light emitting devices, and detectors based upon heterostructures formed between hexagonal boron nitride (hNB) and III-nitrides, and more particularly, to heterojunction devices capable of emitting and detecting photons in the ultraviolet (UV) and extremely ultraviolet (RUV) spectral range. The present invention also relates to neutron detectors based on epitaxially grown hBN thin films (or epitaxial layers) and hBN stacked thin films (or epitaxial layers) to satisfy the thickness required for capturing all incoming neutrons.
摘要翻译：本发明涉及基于在六方氮化硼（nNB）和III-氮化物之间形成的异质结构的光电器件层结构，发光器件和检测器，更具体地说，涉及能够发射和检测紫外线（UV）的光子的异质结器件）和极紫外（RUV）光谱范围。本发明还涉及基于外延生长的hBN薄膜（或外延层）和hBN层叠薄膜（或外延层）的中子探测器，以满足捕获所有入射中子所需的厚度。

16. 发明授权

US09093581B2 Structures and devices based on boron nitride and boron nitride-III-nitride heterostructures 有权
标题翻译：基于氮化硼和氮化硼III族氮化物异质结构的结构和器件
公开(公告)号：US09093581B2
公开(公告)日：2015-07-28
申请号：US13482030
申请日：2012-05-29
申请人： Hongxing Jiang , Sashikanth Majety , Rajendra Dahal , Jing Li , Jingyu Lin
发明人： Hongxing Jiang , Sashikanth Majety , Rajendra Dahal , Jing Li , Jingyu Lin
IPC分类号： H01L33/06 , H01L33/32 , H01L29/778 , H01L29/16 , H01L33/04 , H01L31/0304 , H01L31/0352 , H01L31/105 , H01L31/108 , H01L31/18 , B82Y20/00
CPC分类号： H01L31/03048 , B82Y20/00 , H01L31/035236 , H01L31/105 , H01L31/1085 , H01L31/1848 , H01L31/1852 , H01L33/06 , H01L33/32 , Y02E10/544 , Y02P70/521
摘要： The present invention relates to optoelectronic device layer structures, light emitting devices, and detectors based upon heterostructures formed between hexagonal boron nitride (hNB) and III nitrides, and more particularly, to heterojunction devices capable of emitting and detecting photons in the ultraviolet (UV) and extremely ultraviolet (RUV) spectral range. The present invention also relates to neutron detectors based on epitaxially grown hBN thin films (or epitaxial layers) and hBN stacked thin films (or epitaxial layers) to satisfy the thickness required for capturing all incoming neutrons.
摘要翻译：本发明涉及基于在六方氮化硼（nNB）和III族氮化物之间形成的异质结构的光电器件层结构，发光器件和检测器，更具体地说，涉及能够发射和检测紫外线（UV）的光子的异质结器件，和极紫外（RUV）光谱范围。本发明还涉及基于外延生长的hBN薄膜（或外延层）和hBN层叠薄膜（或外延层）的中子探测器，以满足捕获所有入射中子所需的厚度。

17. 发明授权

US06410940B1 Micro-size LED and detector arrays for minidisplay, hyper-bright light emitting diodes, lighting, and UV detector and imaging sensor applications 有权
标题翻译：用于微型显示器，超亮度发光二极管，照明和UV检测器和成像传感器应用的微尺寸LED和检测器阵列
公开(公告)号：US06410940B1
公开(公告)日：2002-06-25
申请号：US09594960
申请日：2000-06-15
申请人： Hongxing Jiang , Jingyu Lin , Sixuan Jin , Jing Li
发明人： Hongxing Jiang , Jingyu Lin , Sixuan Jin , Jing Li
IPC分类号： H01L2715
CPC分类号： B82Y20/00 , H01L27/14601 , H01L27/156 , H01L31/035236 , H01L31/12 , H01L33/08
摘要： A micro-size LED-like optical element has an n-contact, a p-contact, and an optical active structure connected between the n-contact and the p-contact for generating light when forward biased and for detecting light when reverse biased. The optical active structure has a diameter of about 20 &mgr;m or smaller. When the the optical active structure is forward biased, it forms a micro-size LED (&mgr;LED). When the optical active structure is reverse biased, it forms a micro-size detector (&mgr;detector). An array of the micro-size optical active structures may be used as a minidisplay, a detector, or a sensor (when each structure is separately wired), or as a hyperbright LED (when the structures are wired to turn on and off simultaneously). Alternatively, a hyperbright LED may be obtained by forming a plurality of micro-size holes extending into an LED wafer.
摘要翻译：微尺寸LED状光学元件具有n接触，p接触和连接在n接触和p接触之间的光学有源结构，用于当正向偏置时产生光并且用于当反向偏置时检测光。光学活性结构的直径约为20μm或更小。当光学有源结构正向偏置时，它形成微尺寸LED（muLED）。当光学有源结构被反向偏置时，它形成微尺寸检测器（泥浆仪）。微尺寸光学活性结构的阵列可以用作微型显示器，检测器或传感器（当每个结构单独布线时），或者作为超光LED（当结构被布线以同时打开和关闭时）。或者，可以通过形成延伸到LED晶片中的多个微尺寸孔来获得超光LED。

18. 发明申请

US20130292687A1 Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures 有权
标题翻译：基于氮化硼和氮化硼 - 氮化物氮化物异质结构的结构和器件
公开(公告)号：US20130292687A1
公开(公告)日：2013-11-07
申请号：US13482030
申请日：2012-05-29
申请人： Hongxing Jiang , Sashikanth Majety , Rajendra Dahal , Jing Li , Jingyu Lin
发明人： Hongxing Jiang , Sashikanth Majety , Rajendra Dahal , Jing Li , Jingyu Lin
IPC分类号： H01L31/0304 , H01L33/02 , H01L31/18
CPC分类号： H01L31/03048 , B82Y20/00 , H01L31/035236 , H01L31/105 , H01L31/1085 , H01L31/1848 , H01L31/1852 , H01L33/06 , H01L33/32 , Y02E10/544 , Y02P70/521
摘要： The present invention relates to optoelectronic device layer structures, light emitting devices, and detectors based upon heterostructures formed between hexagonal boron nitride (hNB) and III nitrides, and more particularly, to heterojunction devices capable of emitting and detecting photons in the ultraviolet (UV) and extremely ultraviolet (RUV) spectral range. The present invention also relates to neutron detectors based on epitaxially grown hBN thin films (or epitaxial layers) and hBN stacked thin films (or epitaxial layers) to satisfy the thickness required for capturing all incoming neutrons.
摘要翻译：本发明涉及基于在六方氮化硼（nNB）和III族氮化物之间形成的异质结构的光电器件层结构，发光器件和检测器，更具体地说，涉及能够发射和检测紫外线（UV）的光子的异质结器件，和极紫外（RUV）光谱范围。本发明还涉及基于外延生长的hBN薄膜（或外延层）和hBN层叠薄膜（或外延层）的中子探测器，以满足捕获所有入射中子所需的厚度。

19. 发明申请

US20100320443A1 ER Doped III-Nitride Materials And Devices Synthesized by MOCVD 有权
标题翻译： ER掺杂的III族氮化物材料和MOCVD合成的器件
公开(公告)号：US20100320443A1
公开(公告)日：2010-12-23
申请号：US12375187
申请日：2007-08-24
申请人： Hongxing Jiang , Jingyu Lin , Cris Ugolini , John Zavada
发明人： Hongxing Jiang , Jingyu Lin , Cris Ugolini , John Zavada
IPC分类号： H01L33/00 , H01L21/443
CPC分类号： H01L29/207 , B82Y20/00 , G02B6/1225 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02581 , H01L27/15 , H01L29/2003 , H01L33/305 , H01S3/0632 , H01S3/0637 , H01S3/0933 , H01S3/0941 , H01S3/09415 , H01S3/1608 , H01S3/1628 , H01S3/2383 , H01S5/026 , H01S5/183 , H01S5/32341
摘要： This disclosure relates to the synthesis of Er doped GaN epilayers by in-situ doping by metal-organic chemical vapor deposition (MOCVD). In an embodiment, both above and below bandgap excitation results in a sharp PL emission peak at 1.54 μm. Contrary with other growth methods, MOCVD grown Er-doped GaN epilayers exhibit virtually no visible emission lines, an present a small thermal quenching effect. The Er incorporation has very little effect on the electrical conductivity of the GaN epilayers and Er doped layers retain similar electrical properties as those of undoped GaN.
摘要翻译：本公开涉及通过金属有机化学气相沉积（MOCVD）的原位掺杂来合成Er掺杂的GaN外延层。在一个实施方案中，上面和下面的带隙激发导致在1.54μm处的尖锐的PL发射峰。与其他生长方法相反，MOCVD生长的Er掺杂GaN外延层实际上没有显示出可见的发射线，具有小的热淬火效应。 Er掺入对GaN外延层的导电性几乎没有影响，并且Er掺杂层保持与未掺杂的GaN类似的电性能。

20. 发明授权

US07213942B2 Light emitting diodes for high AC voltage operation and general lighting 有权
标题翻译：用于高交流电压操作和一般照明的发光二极管
公开(公告)号：US07213942B2
公开(公告)日：2007-05-08
申请号：US11120832
申请日：2005-05-03
申请人： Hongxing Jiang , Jingyu Lin
发明人： Hongxing Jiang , Jingyu Lin
IPC分类号： F21S13/14
CPC分类号： H01L27/156 , H01L24/24 , H01L24/82 , H01L2224/24051 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01077 , H01L2924/01079 , H01L2924/014 , H01L2924/12041 , H01L2924/14 , H05B33/0809 , H05B33/0821 , Y10S362/80
摘要： A single-chip integrated LED particularly adapted for direct use with a high voltage AC power comprises a plurality of series-connected LEDs arranged in two arrays and flip chip bonded to a transparent substrate. The opposite polarities of the arrays are connected together and then connected to the AC power source. During the positive half of the AC cycle, one array of LEDs is forward biased and energized, while the other array is reverse biased. During the negative half of the AC cycle, the other array of LEDs is forward biased and thus energized, while the first array is reverse biased and thus not energized. The arrays are alternately energized and de-energized at the frequency of the AC power source, and thus the single-chip integrated LED always appears to be energized.
摘要翻译：特别适用于直接使用高压AC电力的单芯片集成LED包括以两个阵列布置的多个串联连接的LED和与芯片结合的透明基板的倒装芯片。阵列的相反极性连接在一起，然后连接到AC电源。在AC周期的正半周期，一组LED正向偏置并通电，而另一个阵列则被反向偏置。在AC周期的负半部分期间，另一组LED阵列被正向偏置并因此被激励，而第一阵列被反向偏置，因此未通电。在交流电源的频率下，阵列交替地通电并断电，因此单芯片集成LED总是看起来通电。

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