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    • 13. 发明申请
    • Solid-state imaging device and readout method thereof
    • 固态成像装置及其读出方法
    • US20100123813A1
    • 2010-05-20
    • US12588521
    • 2009-10-19
    • Kouichi HaradaHiroki HagiwaraYusuke KikuchiKeita Suzuki
    • Kouichi HaradaHiroki HagiwaraYusuke KikuchiKeita Suzuki
    • H04N5/335
    • H04N5/3728H01L27/14641H01L27/14812H01L27/14831H04N5/378
    • A solid-state imaging device includes: a plurality of pixels arrayed in the vertical transfer direction and in the horizontal transfer direction; a vertical CCD shift register disposed between two pixels adjacent in the horizontal transfer direction of the plurality of pixels; a first channel stop portion used for separation between pixels, formed between the two pixels adjacent in the horizontal transfer direction, and pixels adjacent to the two pixels adjacent in the horizontal transfer direction, in the horizontal transfer direction; and a readout gate portion and a second channel stop portion, formed in a direction parallel to the vertical transfer direction between the pixels and the vertical CCD shift register, with the two pixels adjacent in the horizontal transfer direction sharing the vertical CCD shift register, and with an insulating layer which is thicker than the gate insulating layer of the vertical CCD shift register being formed above the first channel stop portion.
    • 固态成像装置包括:沿垂直传送方向和水平传送方向排列的多个像素; 垂直CCD移位寄存器,设置在所述多个像素的水平传送方向相邻的两个像素之间; 用于在水平传送方向上相邻的两个像素之间形成的像素与水平传送方向上相邻的两个像素相邻的像素之间的间隔的第一通道停止部; 以及在与像素和垂直CCD移位寄存器之间的垂直传送方向平行的方向上形成的读出栅极部分和第二沟道停止部分,其中水平传输方向上相邻的两个像素共享垂直CCD移位寄存器,以及 其具有比垂直CCD移位寄存器的栅极绝缘层厚的绝缘层,其形成在第一沟道停止部分上方。