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11. 发明申请

US20100232225A1 SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：半导体存储设备
公开(公告)号：US20100232225A1
公开(公告)日：2010-09-16
申请号：US12723864
申请日：2010-03-15
申请人： Yuya Suzuki , Toshiki Hisada , Yoshikazu Hosomura
发明人： Yuya Suzuki , Toshiki Hisada , Yoshikazu Hosomura
IPC分类号： G11C16/04 , G11C11/34
CPC分类号： G11C8/10 , G11C16/26 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11526
摘要： A semiconductor storage device has a sense amplifier. The sense amplifier includes a first lower interconnection; a second interlayer insulation film formed on the first interlayer insulation film and top of the first interconnection; a contact interconnection formed in a direction perpendicular to a substrate plane of the semiconductor substrate so as to pass through the second interlayer insulation film, and connected to the first lower interconnection; a first upper interconnection formed on the second interlayer insulation film and connected to the contact interconnection disposed under the first upper interconnection; a dummy contact interconnection formed in a direction perpendicular to the substrate plane of the semiconductor substrate in the second interlayer insulation film, and adjacent to the contact interconnection; and a second upper interconnection formed on the second interlayer insulation film so as to extend in the first direction, and connected to the dummy contact interconnection disposed under the second upper interconnection.
摘要翻译：半导体存储装置具有读出放大器。读出放大器包括第一下部互连; 形成在第一层间绝缘膜上的第二层间绝缘膜和第一互连的顶部; 形成在与半导体衬底的衬底平面垂直的方向上以便穿过第二层间绝缘膜并且连接到第一下互连的接触互连; 形成在所述第二层间绝缘膜上并连接到设置在所述第一上部互连件下方的所述接触互连的第一上互连; 在第二层间绝缘膜中与垂直于半导体衬底的衬底平面的方向形成的虚拟接触互连，并且与接触互连相邻; 以及形成在所述第二层间绝缘膜上以沿所述第一方向延伸的第二上互连件，并且连接到设置在所述第二上互连件下方的所述虚拟接触互连。

12. 发明授权

US08806936B2 Protection cover structure of slide detection apparatus for vehicle seat 有权
标题翻译：汽车座椅滑块检测装置的保护盖结构
公开(公告)号：US08806936B2
公开(公告)日：2014-08-19
申请号：US13228755
申请日：2011-09-09
申请人： Yuya Suzuki , Tomoyuki Takase , Shinya Ando , Naoki Maeda , Michinori Kakumu , Keiichiro Inoue
发明人： Yuya Suzuki , Tomoyuki Takase , Shinya Ando , Naoki Maeda , Michinori Kakumu , Keiichiro Inoue
IPC分类号： G01D11/24
CPC分类号： G01D11/245 , B60N2002/0272 , G01D5/145
摘要： A protection cover structure of a slide detection apparatus for a vehicle seat is provided. The slide detection apparatus is configured to detect a slide state of the vehicle seat with a magnetic detector which is provided to one of a fixed rail and a movable rail configuring a slide rail mechanism of the vehicle seat, and a detectable member provided to the other of the rails. The protection cover structure includes a protection cover provided to the one rail and configured to cover and protect the magnetic detector. The protection cover integrally includes a side cover part which covers a side of the magnetic detector, and a cover part which covers a detection part of the magnetic detector. A tip end portion of the cover part is formed with a lip-shaped contact part which is configured to slidably contact a sidewall surface of the other rail.
摘要翻译：提供了一种用于车辆座椅的滑动检测装置的保护盖结构。滑动检测装置被配置为利用设置在构成车辆座椅的滑轨机构的固定轨道和活动轨道中的一个上的磁性检测器来检测车辆座椅的滑动状态，以及设置到另一个的可检测构件的轨道。保护盖结构包括设置在一个导轨上并被构造成覆盖和保护磁性探测器的保护罩。保护盖一体地包括覆盖磁检测器的一侧的侧盖部分和覆盖磁检测器的检测部分的盖部。盖部的前端部形成有唇形接触部，该唇形接触部被构造成可滑动地接触另一个轨道的侧壁表面。

13. 发明授权

US07948797B2 Nonvolatile semiconductor memory device and method for operating the same 失效
标题翻译：非易失性半导体存储器件及其操作方法
公开(公告)号：US07948797B2
公开(公告)日：2011-05-24
申请号：US12564604
申请日：2009-09-22
申请人： Yuya Suzuki , Dai Nakamura
发明人： Yuya Suzuki , Dai Nakamura
IPC分类号： G11C16/26
CPC分类号： G11C16/0483 , G11C16/26
摘要： A nonvolatile semiconductor memory device comprises: a memory cell array including a plurality of memory cell units each including memory cells, a plurality of bit lines, and a common source line; a sense amplifier operative to read data from a selected memory cell; a control circuit operative to control a read operation of the sense amplifier; and a cell source monitoring circuit operative to detect a voltage of the common source line, compare the detected voltage of the common source line with a reference voltage, and output a read control signal. The sense amplifier is configured to read data from the selected memory cell through at least two cycles. The control circuit is configured to perform control to determine whether the data reading is to be ended after a first reading cycle or a second reading cycle is to be carried out, based on the read control signal.
摘要翻译：非易失性半导体存储器件包括：存储单元阵列，包括多个存储单元单元，每个存储单元包括存储单元，多个位线和公共源极线; 读出放大器，用于从所选存储单元读取数据; 控制电路，用于控制读出放大器的读取操作; 以及电池源监视电路，用于检测公共源极线的电压，将公共源极线的检测电压与参考电压进行比较，并输出读取控制信号。读出放大器被配置为通过至少两个周期从所选存储器单元读取数据。控制电路被配置为基于读取的控制信号执行控制以确定在执行第一读取周期或第二读取周期之后是否结束数据读取。

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