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11. 发明授权

US4220128A Distribution type fuel injection pump 失效
标题翻译：分配式燃油喷射泵
公开(公告)号：US4220128A
公开(公告)日：1980-09-02
申请号：US920393
申请日：1978-06-29
申请人： Masayoshi Kobayashi
发明人： Masayoshi Kobayashi
IPC分类号： F02D1/12 , F02D1/18 , F02M41/12 , F02M39/00
CPC分类号： F02M41/123 , F02D1/125
摘要： A distribution type fuel injection pump comprising a plunger and a control sleeve slidably mounted on the plunger. The plunger reciprocally moves along its axis while at the same time rotating about same. The control sleeve is rotated about the plunger at the time of the starting operation of an engine. A groove is formed on the cylindrical inner wall of the control sleeve. A plurality of radial passages connected to the compression chamber of the plunger is formed in the plunger. Each of the radial passages is arranged so as to face the groove of the control sleeve at one time per one revolution of the plunger. At the time of starting the engine, the radial passages are connected to the groove of the control sleeve in the suction stroke for increasing the quantity of the fuel to be injected. Contrary to this, the radial passages are connected to the groove of the control sleeve at the beginning of the delivery stroke slightly after the engine has been started.
摘要翻译：一种分配式燃料喷射泵，包括可滑动地安装在柱塞上的柱塞和控制套筒。柱塞沿其轴线往复运动，同时相同地旋转。在发动机起动时，控制套筒围绕柱塞旋转。在控制套筒的圆筒形内壁上形成一个槽。在柱塞中形成有与柱塞的压缩室连接的多个径向通路。每个径向通道布置成在柱塞的每转一次的同时面对控制套筒的槽。在起动发动机时，径向通道在吸入冲程中连接到控制套筒的槽，以增加要喷射的燃料的量。与此相反，在发动机起动之后，在输送行程开始时，径向通道连接到控制套管的凹槽。

12. 发明授权

US4211203A Fuel injection pump 失效
标题翻译：燃油喷射泵
公开(公告)号：US4211203A
公开(公告)日：1980-07-08
申请号：US971914
申请日：1978-12-21
申请人： Masayoshi Kobayashi
发明人： Masayoshi Kobayashi
IPC分类号： F02M41/12 , F02M45/00 , F02M59/34 , F02M39/00 , F02M41/08
CPC分类号： F02M59/34 , F02M41/124 , F02M41/126 , F02M45/00
摘要： A distributor type fuel injection pump which includes a relief passage having one end thereof opening in the pump working chamber and the other end communicating with a zone under a lower pressure. Said relief passage is so arranged as to be permanently kept closed by a valve means which is actuated by a valve actuating means for actuating said valve means in response to a fuel supply pressure varying as a function of the engine rotational speed, except in a predetermined low engine speed range, to obtain a decreased injection rate during idling so as to increase the injection period. Thus, the rate of combustion of the engine is reduced to minimize the combustion noise.
摘要翻译：一种分配器式燃料喷射泵，包括一个释放通道，其一端在泵工作室中开口，另一端与较低压力的区域连通。所述释放通道被布置成被阀装置永久地保持关闭，该阀装置由阀致动装置致动，阀致动装置用于响应于作为发动机转速的函数而变化的燃料供应压力来致动所述阀装置，除了预定低发动机转速范围，在空转期间获得降低的喷射率，从而增加喷射周期。因此，减少发动机的燃烧速率以使燃烧噪声最小化。

13. 发明授权

US4169444A Fuel injection apparatus 失效
标题翻译：燃油喷射装置
公开(公告)号：US4169444A
公开(公告)日：1979-10-02
申请号：US775579
申请日：1977-03-08
申请人： Nobuhiro Kaibara , Yasutaka Yuzawa , Masayoshi Kobayashi
发明人： Nobuhiro Kaibara , Yasutaka Yuzawa , Masayoshi Kobayashi
IPC分类号： F02D1/02 , F02D1/16 , F02D1/18 , F02M59/36 , F02M39/00
CPC分类号： F02D1/183 , F02D1/02 , F02M59/361
摘要： A fuel supply pump supplies fuel from a fuel reservoir to a fuel injection pump which comprises a piston for injecting fuel from a fuel injection nozzle into an internal combustion engine. The piston is reciprocated for fuel injection by an engine driven rotary cam. The fuel injection pump further comprises a fuel control sleeve which is positioned by flyweights to control the fuel injection volume in accordance with the engine speed. A modulator valve is actuated by the flyweights to control the supply pump pressure in accordance with engine speed. A fuel injection timing means is responsive to the modulated supply pump pressure to control the angular relationship between the engine crankshaft and the rotary cam and thereby the fuel injection timing in accordance with the modulated pressure.
摘要翻译：燃料供给泵将燃料从燃料储存器供给到燃料喷射泵，燃料喷射泵包括用于将燃料从燃料喷射喷嘴喷射到内燃机中的活塞。活塞由发动机驱动的旋转凸轮往复运动以用于燃料喷射。燃料喷射泵还包括燃料控制套筒，该燃料控制套筒通过飞轮定位，以根据发动机转速控制燃料喷射量。调节阀由飞轮驱动，以根据发动机转速控制供油泵的压力。燃料喷射正时装置响应调制的供应泵压力以控制发动机曲轴和旋转凸轮之间的角度关系，从而根据调制压力来控制燃料喷射正时。

14. 发明授权

US09366442B2 Pilot fuel injector with swirler 有权
标题翻译：先导燃油喷射器与旋流器
公开(公告)号：US09366442B2
公开(公告)日：2016-06-14
申请号：US13485258
申请日：2012-05-31
申请人： Ryusuke Matsuyama , Masayoshi Kobayashi , Takeo Oda , Atsushi Horikawa , Shigeru Hayashi , Kazuo Shimodaira , Kazuaki Matsuura , Hideshi Yamada , Youji Kurosawa , Hitoshi Fujiwara
发明人： Ryusuke Matsuyama , Masayoshi Kobayashi , Takeo Oda , Atsushi Horikawa , Shigeru Hayashi , Kazuo Shimodaira , Kazuaki Matsuura , Hideshi Yamada , Youji Kurosawa , Hitoshi Fujiwara
IPC分类号： F23R3/34 , F23R3/28
CPC分类号： F23R3/343 , F23R3/286
摘要： A fuel injector includes: a pilot injector configured to spray fuel so as to form a first combustion region in a combustion chamber; and a main injector provided coaxially with the pilot injector so as to surround the pilot injector and configured to supply a fuel-air mixture that is a mixture of the fuel and air to form a second combustion region in the combustion chamber, wherein the pilot injector includes: a center nozzle configured to eject air jet flowing straight in an axial direction on a central axis of the pilot injector; an inside swirler provided on a radially outer side of the center nozzle and configured to cause inflow air to swirl around the central axis; and a pilot fuel injecting portion configured to inject the fuel from between the center nozzle and the inside swirler to air flow in the center nozzle.
摘要翻译：燃料喷射器包括：引燃喷射器，构造成喷射燃料以在燃烧室中形成第一燃烧区域; 以及主喷射器，其与所述引导喷射器同轴地设置成围绕所述引导喷射器并且构造成供应作为所述燃料和空气的混合物的燃料 - 空气混合物以在所述燃烧室中形成第二燃烧区域，其中所述引导喷射器包括：中心喷嘴，其构造成喷射在所述先导喷射器的中心轴线上沿轴向直线流动的喷气; 设置在中心喷嘴的径向外侧的内旋流器，其构造成使流入空气围绕中心轴旋转; 以及配置成将来自中心喷嘴和内部旋流器之间的燃料喷射到中心喷嘴中的空气流的引燃燃料喷射部。

15. 发明授权

US08748266B2 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08748266B2
公开(公告)日：2014-06-10
申请号：US13291999
申请日：2011-11-08
申请人： Sumito Numazawa , Yoshito Nakazawa , Masayoshi Kobayashi , Satoshi Kudo , Yasuo Imai , Sakae Kubo , Takashi Shigematsu , Akihiro Ohnishi , Kozo Uesawa , Kentaro Oishi
发明人： Sumito Numazawa , Yoshito Nakazawa , Masayoshi Kobayashi , Satoshi Kudo , Yasuo Imai , Sakae Kubo , Takashi Shigematsu , Akihiro Ohnishi , Kozo Uesawa , Kentaro Oishi
IPC分类号： H01L21/336
CPC分类号： H01L21/28114 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/0696 , H01L29/0869 , H01L29/4236 , H01L29/42376 , H01L29/4238 , H01L29/511 , H01L29/513 , H01L29/518 , H01L29/66666 , H01L29/66734 , H01L29/7813 , H01L29/7827
摘要： In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.
摘要翻译：在制造具有沟槽栅极结构的MISFET的半导体器件的方法中，从半导体层的方向的深度方向上的第一导电类型的半导体层的主表面形成沟槽，在沟槽的内表面上形成包括热氧化膜和沉积膜的栅极绝缘膜，并且在沟槽中形成栅电极之后，将杂质引入到第一导电类型的半导体衬底中以形成用作沟道形成区域的第二导电类型的半导体区域，并且将杂质引入到第二导电类型的半导体区域中，以形成用作源极区域的第一导电类型的半导体区域。

16. 发明申请

US20120180034A1 COMMUNICATION SYSTEM, INFORMATION PROCESSING APPARATUS, COMPUTER-READABLE STORAGE MEDIUM, AND COMMUNICATION METHOD 有权
标题翻译：通信系统，信息处理装置，计算机可读存储介质和通信方法
公开(公告)号：US20120180034A1
公开(公告)日：2012-07-12
申请号：US13230159
申请日：2011-09-12
申请人： Minoru HATAMOTO , Eiji Tokunaga , Masayoshi Matsuoka , Teruhiko Goda , Seiji Shibaguchi , Masayoshi Kobayashi , Tsutomu Araki , Megumi Kurata
发明人： Minoru HATAMOTO , Eiji Tokunaga , Masayoshi Matsuoka , Teruhiko Goda , Seiji Shibaguchi , Masayoshi Kobayashi , Tsutomu Araki , Megumi Kurata
IPC分类号： G06F9/44
CPC分类号： G06F8/65
摘要： Prior to performing download play, it is checked whether or not it is necessary to update firmware of a slave apparatus. When it is necessary to update the firmware of the slave apparatus, a firmware update program is transmitted from a master apparatus to the slave apparatus, and the firmware of the slave apparatus is updated in accordance with the firmware update program. Thus, it is possible to update basic software by a novel method.
摘要翻译：在执行下载播放之前，检查是否需要更新从设备的固件。当需要更新从设备的固件时，将固件更新程序从主设备发送到从设备，并且根据固件更新程序来更新从设备的固件。因此，可以通过新颖的方法来更新基本软件。

17. 发明授权

US08179806B2 Device, method, and program for estimating quality-degraded location of communication network, and communication network system 有权
标题翻译：用于估计通信网络质量恶化位置的设备，方法和程序，以及通信网络系统
公开(公告)号：US08179806B2
公开(公告)日：2012-05-15
申请号：US12187659
申请日：2008-08-07
申请人： Masayoshi Kobayashi , Tsutomu Kitamura
发明人： Masayoshi Kobayashi , Tsutomu Kitamura
IPC分类号： G01R31/08
CPC分类号： H04L45/02 , H04L43/026 , H04L43/0835 , Y02D50/30
摘要： Estimation is carried out with high accuracy based on flow quality information in a situation where, although a set of links that may have a flow passing through is known, which of such links the flow passed through cannot be identified, such as multi-paths routing, load distribution routing, and the like. A device for estimating a quality-degraded location includes a flow quality information collecting section that collects communication quality of a flow of a network, a routing information collecting section that collects routing information of the network, a determining section for determining a quality-degraded flow and a quality-non-degraded flow based on the flow quality information to determine a link through which the flow passes from the routing information of the network, a non-degraded link elimination section that eliminates a link not configuring multi-paths as a non-degraded link without eliminating a link configuring multi-paths as a non-degraded link, for a link on a path of the flow, with respect to the quality-non-degraded flow, and a degraded link determining section for determining a degraded link from links not eliminated as the non-degraded links.
摘要翻译：在可以具有通过流程的一组链路是已知的情况下，基于流量质量信息以高精度进行估计，流经过的这种链路中的哪一个不能被识别，例如多路径路由，负载分配路由等。用于估计质量恶化位置的装置包括：流量质量信息收集部，其收集网络流的通信质量;收集网络的路由信息的路由信息收集部;确定品质恶化流的判定部; 以及基于所述流量质量信息的质量非劣化流，以确定所述流从所述网络的路由信息传递的链路;非劣化链路消除部，其消除不配置多路径的链路作为非链路; 降级的链路，而不消除将多路径配置为非降级链路的链路，对于流的路径上的链路相对于质量非劣化流，以及用于确定恶化链路的降级链路确定部从没有被淘汰的链接作为非恶化链接。

18. 发明授权

US08036121B2 Method of estimating quality degradation on network in communication network system 有权
标题翻译：估算通信网络系统网络质量下降的方法
公开(公告)号：US08036121B2
公开(公告)日：2011-10-11
申请号：US12438243
申请日：2007-08-08
申请人： Masayoshi Kobayashi
发明人： Masayoshi Kobayashi
IPC分类号： H04J1/16
CPC分类号： H04L43/00 , H04L41/5009 , H04L43/0829 , H04L43/0852 , H04L45/302
摘要： In a quality degradation (QD) portion estimating method on a network, a passive measuring unit connected with a management target network measures E2E flow quality (FQ) data on a route from a transmitting terminal connected with a different network to a receiving terminal connected with the management target network and upstream FQ data on the route from the transmitting terminal to the passive measuring unit in the management target network. A QD portion estimating section connected with the management target network collects E2E FQ data and upper stream FQ data measured by said passive measuring unit. A detecting section detects as a QD flow in the management target network, a flow related to the E2E FQ data that does not show degradation of FQ, for the upstream FQ data related to the same transmitting and receiving terminals, from among the E2E FQ data which show the degradation of FQ.
摘要翻译：在网络中的质量劣化（QD）部分估计方法中，与管理目标网络连接的被动测量单元测量从与不同网络连接的发送终端到与其连接的接收终端的路由上的E2E流量质量（FQ）数据管理目标网络和管理目标网络中从发送终端到被动测量单元的路由上的上行FQ数据。与管理目标网络连接的QD部分估计部分收集由所述被动测量单元测量的E2E FQ数据和上游FQ数据。在E2E FQ数据中，检测部分检测作为管理对象网络中的QD流，对于与相同发送和接收终端相关的上行FQ数据，不显示FQ退化的E2E FQ数据的流程这表明FQ的降解。

19. 发明申请

US20100177646A1 METHOD OF ESTIMATING QUALITY DEGRADATION ON NETWORK IN COMMUNICATION NETWORK SYSTEM 有权
标题翻译：网络通信网络质量评估方法
公开(公告)号：US20100177646A1
公开(公告)日：2010-07-15
申请号：US12438243
申请日：2007-08-08
申请人： Masayoshi Kobayashi
发明人： Masayoshi Kobayashi
IPC分类号： H04L12/26
CPC分类号： H04L43/00 , H04L41/5009 , H04L43/0829 , H04L43/0852 , H04L45/302
摘要： In a quality degradation (QD) portion estimating method on a network, a passive measuring unit connected with a management target network measures E2E flow quality (FQ) data on a route from a transmitting terminal connected with a different network to a receiving terminal connected with the management target network and upstream FQ data on the route from the transmitting terminal to said passive measuring unit in the management target network. A QD portion estimating section connected with the management target network collects E2E FQ data and upper stream FQ data measured by said passive measuring unit. A detecting section detects as a QD flow in the management target network, a flow related to the E2E FQ data that does not show degradation of FQ, for the upstream FQ data related to the same transmitting and receiving terminals, from among the E2E FQ data which show the degradation of FQ.
摘要翻译：在网络中的质量劣化（QD）部分估计方法中，与管理目标网络连接的被动测量单元测量从与不同网络连接的发送终端到与其连接的接收终端的路由上的E2E流量质量（FQ）数据管理目标网络和从发送终端到管理目标网络中的被动测量单元的路由上的上行FQ数据。与管理目标网络连接的QD部分估计部分收集由所述被动测量单元测量的E2E FQ数据和上游FQ数据。在E2E FQ数据中，检测部分检测作为管理对象网络中的QD流，对于与相同发送和接收终端相关的上行FQ数据，不显示FQ退化的E2E FQ数据的流程这表明FQ的降解。

20. 发明申请

US20100173461A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20100173461A1
公开(公告)日：2010-07-08
申请号：US12724323
申请日：2010-03-15
申请人： Sumito Numazawa , Yoshito Nakazawa , Masayoshi Kobayashi , Satoshi Kudo , Yasuo Imai , Sakae Kubo , Takashi Shigematsu , Akihiro Ohnishi , Kozo Uesawa , Kentaro Oishi
发明人： Sumito Numazawa , Yoshito Nakazawa , Masayoshi Kobayashi , Satoshi Kudo , Yasuo Imai , Sakae Kubo , Takashi Shigematsu , Akihiro Ohnishi , Kozo Uesawa , Kentaro Oishi
IPC分类号： H01L21/336
CPC分类号： H01L21/28114 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/0696 , H01L29/0869 , H01L29/4236 , H01L29/42376 , H01L29/4238 , H01L29/511 , H01L29/513 , H01L29/518 , H01L29/66666 , H01L29/66734 , H01L29/7813 , H01L29/7827
摘要： In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.
摘要翻译：在制造具有沟槽栅极结构的MISFET的半导体器件的方法中，从半导体层的深度方向上作为漏极区域的第一导电型半导体层的主表面形成沟槽，形成栅极在沟槽的内表面上形成包括热氧化膜和沉积膜的绝缘膜，并且在沟槽中形成栅电极之后，将杂质引入到第一导电类型的半导体衬底中以形成半导体区域用作沟道形成区域的第二导电类型，并且将杂质引入到第二导电类型的半导体区域中，以形成用作源极区域的第一导电类型的半导体区域。

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