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11. 发明申请

US20090148734A1 Power system using water as fuel 审中-公开
标题翻译：电力系统以水为燃料
公开(公告)号：US20090148734A1
公开(公告)日：2009-06-11
申请号：US12000215
申请日：2007-12-11
申请人： Ruey-Li Wang , Yung-Chi Lin
发明人： Ruey-Li Wang , Yung-Chi Lin
IPC分类号： H01M8/18
CPC分类号： H01M8/186 , H01M8/0656 , Y02E60/528
摘要： A power system includes a power supply unit, a hydrogen oxygen generator that has an electrolytic chamber and positive electrode module and negative electrode module mounted in the electrolytic chamber and electrically connected to the power supply unit to electrolyze an electrolytic solution into a gas of hydrogen and oxygen, a storage unit for storing generated gas of hydrogen and oxygen generated, a nozzle connected to the storage unit for outputting the gas of hydrogen and oxygen to a carburetor of a vaporizing system of a motion mechanism for guiding into a combustion chamber by an air intake device for combustion and explosion to move the motion mechanism, and a pressure regulator for regulating the pressure of the gas of hydrogen and oxygen outputted from the storage unit to the nozzle.
摘要翻译：电力系统包括电源单元，具有电解室和正电极模块的氢氧发生器和安装在电解室中的负电极模块，并且电连接到电源单元以将电解溶液电解为氢气，氧气，用于存储生成的氢气和氧气的产生气体的存储单元，连接到存储单元的喷嘴，用于将氢气和氧气输出到用于通过空气引导到燃烧室中的运动机构的蒸发系统的化油器用于燃烧和爆炸的进气装置以移动运动机构;以及压力调节器，用于调节从储存单元输出到喷嘴的氢气和氧气的压力。

12. 发明授权

US08338939B2 TSV formation processes using TSV-last approach 有权
标题翻译：使用TSV最后一种方法的TSV形成过程
公开(公告)号：US08338939B2
公开(公告)日：2012-12-25
申请号：US12834304
申请日：2010-07-12
申请人： Jing-Cheng Lin , Yung-Chi Lin , Ku-Feng Yang
发明人： Jing-Cheng Lin , Yung-Chi Lin , Ku-Feng Yang
IPC分类号： H01L23/48
CPC分类号： H01L21/76898 , H01L21/30604 , H01L21/31111 , H01L21/762 , H01L21/76802 , H01L21/76831 , H01L21/76877 , H01L21/823475 , H01L21/823481 , H01L23/481 , H01L24/11 , H01L29/78 , H01L2224/131 , H01L2924/01029 , H01L2924/00014
摘要： A device includes a semiconductor substrate having a front surface and a back surface opposite the front surface. An insulation region extends from the front surface into the semiconductor substrate. An inter-layer dielectric (ILD) is over the insulation region. A landing pad extends from a top surface of the ILD into the insulation region. A through-substrate via (TSV) extends from the back surface of the semiconductor substrate to the landing pad.
摘要翻译：一种器件包括具有与前表面相对的前表面和后表面的半导体衬底。绝缘区域从前表面延伸到半导体衬底中。层间电介质（ILD）在绝缘区域之上。着陆垫从ILD的顶表面延伸到绝缘区域中。贯穿基板通孔（TSV）从半导体基板的背面延伸到着陆焊盘。

13. 发明申请

US20110193221A1 3DIC Architecture with Interposer for Bonding Dies 审中-公开
标题翻译：用于粘接模具的插入式3DIC架构
公开(公告)号：US20110193221A1
公开(公告)日：2011-08-11
申请号：US12774558
申请日：2010-05-05
申请人： Hsien-Pin Hu , Chen-Hua Yu , Ming-Fa Chen , Jing-Cheng Lin , Jiun Ren Lai , Yung-Chi Lin
发明人： Hsien-Pin Hu , Chen-Hua Yu , Ming-Fa Chen , Jing-Cheng Lin , Jiun Ren Lai , Yung-Chi Lin
IPC分类号： H01L23/538 , H01L21/60 , H01L21/50 , H01L23/488
CPC分类号： H01L23/5389 , H01L21/563 , H01L21/6835 , H01L23/147 , H01L23/3121 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L24/16 , H01L24/81 , H01L24/97 , H01L25/0652 , H01L2221/68345 , H01L2224/73203 , H01L2224/73204 , H01L2224/81001 , H01L2224/81801 , H01L2224/97 , H01L2924/01013 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/181 , H01L2924/19041 , H01L2224/81 , H01L2924/00012
摘要： A device includes an interposer, which includes a substrate having a top surface. An interconnect structure is formed over the top surface of the substrate, wherein the interconnect structure includes at least one dielectric layer, and metal features in the at least one dielectric layer. A plurality of through-substrate vias (TSVs) is in the substrate and electrically coupled to the interconnect structure. A first die is over and bonded onto the interposer. A second die is bonded onto the interposer, wherein the second die is under the interconnect structure.
摘要翻译：一种装置包括插入件，其包括具有顶表面的基板。互连结构形成在衬底的顶表面上，其中互连结构包括至少一个电介质层，以及至少一个电介质层中的金属特征。多个穿通基板通孔（TSV）在基板中并电耦合到互连结构。第一个模具结束并粘贴到插入器上。第二管芯被结合到插入件上，其中第二管芯在互连结构之下。

14. 发明授权

US5927688A Control valve for an air pressure bar 失效
标题翻译：气压杆用控制阀
公开(公告)号：US5927688A
公开(公告)日：1999-07-27
申请号：US980647
申请日：1997-12-01
申请人： Yung-Chi Lin
发明人： Yung-Chi Lin
IPC分类号： A47C3/30 , F16K31/00
CPC分类号： A47C3/30 , Y10S251/904
摘要： A control valve for an air pressure bar includes a valve cap having an annular groove in a outer surface, a valve body having an annular ridge and an aperture in an annular wall, a valve base and a pin rod. The aperture producing elasticity to let the valve body combined tightly with the valve cap and a stepped notch in an annular wall below the upper center cavity of the valve body form an air passageway for gas to flow through. The valve body and the valve base are combined together by an annular ridge on an inner surface of a lower center cavity of the valve body and an annular groove in an outer surface of the valve base. The valve base has a stop on an inner surface of a center hole to stop a bottom of the pin rod not falling out of the valve body.
摘要翻译：用于空气压力杆的控制阀包括：阀盖，其在外表面具有环形槽，阀体具有环形凸脊和环形壁中的孔，阀座和销杆。产生弹性的孔使阀体与阀盖紧密结合，并且在阀体的上中心腔下方的环形壁中的阶梯式凹口形成用于气体流过的空气通道。阀体和阀座通过在阀体的下部中心腔的内表面上的环形脊和阀底部的外表面中的环形槽组合在一起。阀座在中心孔的内表面上具有止动件，以阻止销杆的底部不会从阀体脱出。

15. 发明授权

US08866301B2 Package systems having interposers with interconnection structures 有权
标题翻译：具有互连结构的插入器的封装系统
公开(公告)号：US08866301B2
公开(公告)日：2014-10-21
申请号：US12781960
申请日：2010-05-18
申请人： Yung-Chi Lin , Jing-Cheng Lin , Chen-Hua Yu
发明人： Yung-Chi Lin , Jing-Cheng Lin , Chen-Hua Yu
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/02 , H01L23/498 , H01L23/538 , H01L23/00 , H01L23/31 , H01L21/56 , H01L23/29 , H01L21/48
CPC分类号： H01L21/4857 , H01L21/4846 , H01L21/4853 , H01L21/486 , H01L21/56 , H01L21/563 , H01L21/565 , H01L21/6835 , H01L21/768 , H01L23/295 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/5389 , H01L24/03 , H01L24/11 , H01L24/19 , H01L24/24 , H01L25/0657 , H01L25/50 , H01L2221/68359 , H01L2224/02331 , H01L2224/02372 , H01L2224/0239 , H01L2224/0401 , H01L2224/12105 , H01L2224/16225 , H01L2224/24227 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2225/06517 , H01L2225/06548 , H01L2225/06572 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01059 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/15192 , H01L2924/15311 , H01L2924/15788 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： A package system includes a first integrated circuit disposed over an interposer. The interposer includes at least one molding compound layer including a plurality of electrical connection structures through the at least one molding compound layer. A first interconnect structure is disposed over a first surface of the at least one molding compound layer and electrically coupled with the plurality of electrical connection structures. The first integrated circuit is electrically coupled with the first interconnect structure.
摘要翻译：封装系统包括设置在插入器上的第一集成电路。所述插入器包括至少一个包含穿过所述至少一个模塑复合层的多个电连接结构的模塑复合层。第一互连结构设置在至少一个模塑复合层的第一表面上并与多个电连接结构电耦合。第一集成电路与第一互连结构电耦合。

16. 发明申请

US20120068218A1 THERMALLY EFFICIENT PACKAGING FOR A PHOTONIC DEVICE 审中-公开
标题翻译：用于光电器件的热效率包装
公开(公告)号：US20120068218A1
公开(公告)日：2012-03-22
申请号：US12884570
申请日：2010-09-17
申请人： Hung-Pin Chang , Yung-Chi Lin , Chia-Lin Yu , Jui-Ping Hung , Chien Ling Hwang , Chen-Hua Yu
发明人： Hung-Pin Chang , Yung-Chi Lin , Chia-Lin Yu , Jui-Ping Hung , Chien Ling Hwang , Chen-Hua Yu
IPC分类号： H01L33/62 , H01L21/50
CPC分类号： H01L33/642 , H01L33/486 , H01L33/647 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2933/0033 , H01L2933/0075 , H01L2924/00014 , H01L2924/00
摘要： The present disclosure provides a method of packaging for a photonic device, such as a light-emitting diode device. The packaging includes an insulating structure. The packaging includes first and second conductive structures that each extend through the insulating structure. A substantial area of a bottom surface of the light-emitting diode device is in direct contact with a top surface of the first conductive structure. A top surface of the light-emitting diode device is bonded to the second conductive structure through a bonding wire.
摘要翻译：本公开提供了一种用于光子器件（例如发光二极管器件）的封装方法。包装包括绝缘结构。该包装包括各自延伸穿过绝缘结构的第一和第二导电结构。发光二极管器件的底面的实质区域与第一导电结构的顶表面直接接触。发光二极管器件的顶表面通过接合线接合到第二导电结构。

17. 发明授权

US5022533A Moving display rack 失效
标题翻译：移动展示架
公开(公告)号：US5022533A
公开(公告)日：1991-06-11
申请号：US433252
申请日：1989-11-08
申请人： Yung-Chi Lin
发明人： Yung-Chi Lin
IPC分类号： A47F3/08
CPC分类号： A47F3/08
摘要： A moving display rack includes a plurality of generally bow shaped link rods used to secure a plurality of bearing boards, which are disposed at different level positions, to a base by means of fastening plates and bushings. During display, the motor which is set in the base drives the link rods to carry the bearing boards to rotate horizontally, so as to attract visitors' attention.
摘要翻译：移动的显示架包括多个通常为弓形的连杆，用于通过紧固板和衬套将设置在不同水平位置的多个轴承板固定到基座。在显示过程中，设置在基座中的电机驱动连杆将轴承板水平旋转，以吸引游客的注意。

18. 发明授权

US08946742B2 Semiconductor package with through silicon vias 有权
标题翻译：半导体封装通过硅通孔
公开(公告)号：US08946742B2
公开(公告)日：2015-02-03
申请号：US12897124
申请日：2010-10-04
申请人： Chen-Hua Yu , Hung-Pin Chang , Yung-Chi Lin , Chia-Lin Yu , Jui-Pin Hung , Chien Ling Hwang
发明人： Chen-Hua Yu , Hung-Pin Chang , Yung-Chi Lin , Chia-Lin Yu , Jui-Pin Hung , Chien Ling Hwang
IPC分类号： H01L33/00 , H01L21/768 , H01L21/683 , H01L23/48 , H01L33/48 , H01L33/64 , H01L21/48 , H01L23/14 , H01L23/498 , H01L23/00 , H01L33/62
CPC分类号： H01L21/76898 , H01L21/3065 , H01L21/486 , H01L21/6835 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L23/147 , H01L23/481 , H01L23/49827 , H01L24/29 , H01L24/48 , H01L24/49 , H01L24/97 , H01L33/005 , H01L33/0054 , H01L33/486 , H01L33/62 , H01L33/641 , H01L33/644 , H01L33/647 , H01L2221/68345 , H01L2221/68359 , H01L2224/16 , H01L2224/32225 , H01L2224/32506 , H01L2224/48091 , H01L2224/48227 , H01L2224/48233 , H01L2224/49113 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/04941 , H01L2924/12041 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2933/0066 , H01L2924/3512 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The substrate with through silicon plugs (or vias) described above removes the need for conductive bumps. The process flow is very simple and cost efficient. The structures described combines the separate TSV, redistribution layer, and conductive bump structures into a single structure. By combining the separate structures, a low resistance electrical connection with high heat dissipation capability is created. In addition, the substrate with through silicon plugs (or vias, or trenches) also allows multiple chips to be packaged together. A through silicon trench can surround the one or more chips to provide protection against copper diffusing to neighboring devices during manufacturing. In addition, multiple chips with similar or different functions can be integrated on the TSV substrate. Through silicon plugs with different patterns can be used under a semiconductor chip(s) to improve heat dissipation and to resolve manufacturing concerns.
摘要翻译：具有上述通孔硅衬底（或通孔）的基板消除了对导电凸块的需要。流程非常简单，成本效益高。所描述的结构将单独的TSV，再分配层和导电凸块结构组合成单个结构。通过组合单独的结构，产生具有高散热能力的低电阻电连接。此外，具有通过硅插头（或通孔或沟槽）的基板还允许将多个芯片封装在一起。通过硅沟槽可围绕一个或多个芯片，以在制造期间提供防止铜扩散到相邻器件的保护。此外，具有相似或不同功能的多个芯片可以集成在TSV基板上。通过具有不同图案的硅插头可以在半导体芯片下使用以改善散热并解决制造问题。

19. 发明授权

US08791011B2 Through-silicon via structure formation process 有权
标题翻译：通硅结构形成工艺
公开(公告)号：US08791011B2
公开(公告)日：2014-07-29
申请号：US13775983
申请日：2013-02-25
申请人： Yung-Chi Lin , Weng-Jin Wu , Shau-Lin Shue
发明人： Yung-Chi Lin , Weng-Jin Wu , Shau-Lin Shue
IPC分类号： H01L21/4763
CPC分类号： H01L21/76871 , H01L21/76844 , H01L21/76877 , H01L21/76898 , H01L23/481 , H01L2224/131 , H01L2224/13147 , H01L2224/16145 , H01L2924/3011 , H01L2924/014 , H01L2924/00014
摘要： In a process, an opening is formed to extend from a front surface of a semiconductor substrate through a part of the semiconductor substrate. A metal seed layer is formed on a sidewall of the opening. A block layer is formed on only a portion of the metal seed layer. A metal layer is formed on the block layer and the metal seed layer to fill the opening.
摘要翻译：在此过程中，形成从半导体衬底的前表面延伸穿过半导体衬底的一部分的开口。金属种子层形成在开口的侧壁上。仅在金属种子层的一部分上形成阻挡层。在阻挡层和金属种子层上形成金属层以填充开口。

20. 发明授权

US08507940B2 Heat dissipation by through silicon plugs 有权
标题翻译：通过硅插头散热
公开(公告)号：US08507940B2
公开(公告)日：2013-08-13
申请号：US12879584
申请日：2010-09-10
申请人： Chen-Hua Yu , Hung-Pin Chang , Yung-Chi Lin , Chia-Lin Yu , Jui-Pin Hung , Chien Ling Hwang
发明人： Chen-Hua Yu , Hung-Pin Chang , Yung-Chi Lin , Chia-Lin Yu , Jui-Pin Hung , Chien Ling Hwang
IPC分类号： H01L33/00
CPC分类号： H01L21/76898 , H01L21/3065 , H01L21/486 , H01L21/6835 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L23/147 , H01L23/481 , H01L23/49827 , H01L24/29 , H01L24/48 , H01L24/49 , H01L24/97 , H01L33/005 , H01L33/0054 , H01L33/486 , H01L33/62 , H01L33/641 , H01L33/644 , H01L33/647 , H01L2221/68345 , H01L2221/68359 , H01L2224/16 , H01L2224/32225 , H01L2224/32506 , H01L2224/48091 , H01L2224/48227 , H01L2224/48233 , H01L2224/49113 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/04941 , H01L2924/12041 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2933/0066 , H01L2924/3512 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The package substrates with through silicon plugs (or vias) described above provide lateral and vertical heat dissipation pathways for semiconductor chips that require thermal management. Designs of through silicon plugs (TSPs) with high duty ratios can most effectively provide heat dissipation. TSP designs with patterns of double-sided combs can provide high duty ratios, such as equal to or greater than 50%. Package substrates with high duty ratios are useful for semiconductor chips that generate large amount of heat. An example of such semiconductor chip is a light-emitting diode (LED) chip.
摘要翻译：具有上述通孔硅封装（或通孔）的封装衬底为需要热管理的半导体芯片提供侧向和垂直散热路径。具有高占空比的通过硅插头（TSP）的设计可以最有效地提供散热。具有双面梳状图案的TSP设计可以提供等于或大于50％的高占空比。具有高占空比的封装衬底对于产生大量热量的半导体芯片是有用的。这种半导体芯片的例子是发光二极管（LED）芯片。

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