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11. 发明申请

US20130022860A1 LEAD ACID STORAGE BATTERY 审中-公开
标题翻译：铅酸蓄电池
公开(公告)号：US20130022860A1
公开(公告)日：2013-01-24
申请号：US13581657
申请日：2010-12-27
申请人： Satoshi Minoura , Toshio Shibahara , Masanori Sakai , Koji Kogure
发明人： Satoshi Minoura , Toshio Shibahara , Masanori Sakai , Koji Kogure
IPC分类号： H01M4/583 , H01M4/60 , H01M2/00
CPC分类号： H01M4/14 , H01M2/1666 , H01M4/625 , H01M4/628 , H01M10/06 , H01M2004/021 , Y02E60/126 , Y02T10/7016
摘要： A flooded-type lead acid storage battery in which charging is intermittently carried out in a short period of time and high-efficiency discharge to a load is carried out in a partial state of charge, wherein the charge acceptance and service life characteristics are improved by using a positive plate in which the specific surface area of the active material is set to 6 m2/g or more; a negative plate with improved charge acceptance and service life performance obtained by adding a carbonaceous electrically conductive material, and a bisphenol aminobenzenesulfonic acid formaldehyde condensate to the negative active material; and a separator formed from a nonwoven in which the surface facing the negative plate is composed of material selected from glass, pulp, and polyolefin.
摘要翻译：在部分充电状态下进行在短时间内间歇地进行充电并对负载进行高效率放电的淹水式铅酸蓄电池，其中充电接收和使用寿命特性通过使用将活性物质的比表面积设定为6m 2 / g以上的正极板; 通过向负极活性物质中添加碳质导电材料和双酚氨基苯磺酸甲醛缩合物而获得的具有改善的电荷接受性和使用寿命性能的负极板; 以及由非织造材料形成的隔板，其中面向负极板的表面由选自玻璃，纸浆和聚烯烃的材料构成。

12. 发明授权

US08261692B2 Substrate processing apparatus and reaction container 有权
标题翻译：基材加工设备和反应容器
公开(公告)号：US08261692B2
公开(公告)日：2012-09-11
申请号：US12823001
申请日：2010-06-24
申请人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
发明人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
IPC分类号： C23C16/50 , C23C16/509 , C23C16/503 , C23C16/505 , C23C16/458 , C23F1/00 , H01L21/306
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01J37/3244
摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.
摘要翻译：基板处理装置包括容纳层叠基板的反应室，气体导入部和缓冲室，其中，沿着基板的堆叠方向设置气体导入部，并将基板处理气体导入缓冲室，缓冲室包括沿着基板的层叠方向设置的多个气体供给开口，从气体导入部导入的处理气体从气体供给口供给到反应室。

13. 发明授权

US08257093B2 Electronic apparatus 有权
标题翻译：电子仪器
公开(公告)号：US08257093B2
公开(公告)日：2012-09-04
申请号：US13019647
申请日：2011-02-02
申请人： Masanori Sakai , Taro Fuchigami
发明人： Masanori Sakai , Taro Fuchigami
IPC分类号： H01R12/00
CPC分类号： H01R12/00
摘要： Connector jacks are surface-mounted on one surface of a substrate. A reinforcing member reinforces the connector jacks. On the reinforcing member, a first reinforcing part, which is in contact with the back of the surface of the substrate on which the connector jack is mounted, and second reinforcing parts, which elastically urge the top surface of the connector jacks, are formed.
摘要翻译：连接器插座表面安装在基板的一个表面上。加强构件加强连接器插座。在加强构件上形成有与安装有连接器插座的基板的表面的背面接触的第一加强部和弹性地推压连接器插座的顶面的第二加强部。

14. 发明授权

US08227346B2 Method of producing semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08227346B2
公开(公告)日：2012-07-24
申请号：US13306654
申请日：2011-11-29
申请人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/44
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.
摘要翻译：本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序，第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步，去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为反应位点，其中第一至第五步骤重复预定时间。

15. 发明授权

US08211802B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US08211802B2
公开(公告)日：2012-07-03
申请号：US12954369
申请日：2010-11-24
申请人： Kazuyuki Okuda , Toru Kagaya , Masanori Sakai
发明人： Kazuyuki Okuda , Toru Kagaya , Masanori Sakai
IPC分类号： H01L21/306 , B08B13/00
CPC分类号： B08B5/00 , C23C16/4405 , C23C16/4412 , H01L21/02057 , H01L21/67253
摘要： A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube.
摘要翻译：一种基板处理装置的清洗方法，其特征在于，包括：在反应管内容纳清洗气体，在反应管内不产生清洗气体的气流，将清洗气体供给反应管，反应管或通过以排气速率排出清洁气体，其排气速率基本上不影响清洁气体在反应管中的均匀扩散从在清洁气体被供给到预定时间之前的预定时间点的时间点反应管到开始向反应管供给清洁气体后经过几秒钟的时间点; 然后从反应管中排出清洗气体。

16. 发明申请

US20120077350A1 METHOD OF PRODUCING SEMICONDUCTOR DEVICE 有权
标题翻译：生产半导体器件的方法
公开(公告)号：US20120077350A1
公开(公告)日：2012-03-29
申请号：US13306654
申请日：2011-11-29
申请人： Hironobu MIYA , Kazuyuki TOYODA , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu MIYA , Kazuyuki TOYODA , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/31
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.
摘要翻译：本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序，第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步，去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为反应位点，其中第一至第五步骤重复预定时间。

17. 发明申请

US20110130001A1 Substrate Processing Apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US20110130001A1
公开(公告)日：2011-06-02
申请号：US12954369
申请日：2010-11-24
申请人： Kazuyuki OKUDA , Toru Kagaya , Masanori Sakai
发明人： Kazuyuki OKUDA , Toru Kagaya , Masanori Sakai
IPC分类号： H01L21/306 , B08B13/00
CPC分类号： B08B5/00 , C23C16/4405 , C23C16/4412 , H01L21/02057 , H01L21/67253
摘要： A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube.
摘要翻译：一种基板处理装置的清洗方法，其特征在于，包括：在反应管内容纳清洗气体，在反应管内不产生清洗气体的气流，将清洗气体供给反应管，反应管或通过以排气速率排出清洁气体，其排气速率基本上不影响清洁气体在反应管中的均匀扩散从在清洁气体被供给到预定时间之前的预定时间点的时间点反应管到开始向反应管供给清洁气体后经过几秒钟的时间点; 然后从反应管中排出清洗气体。

18. 发明申请

US20110045675A1 SUBSTRATE PROCESSING APPARATUS AND PRODUCING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：基板加工装置及半导体器件的制造方法
公开(公告)号：US20110045675A1
公开(公告)日：2011-02-24
申请号：US12916920
申请日：2010-11-01
申请人： Hironobu MIYA , Taketoshi Sato , Norikazu Mizuno , Masanori Sakai , Takaaki Noda
发明人： Hironobu MIYA , Taketoshi Sato , Norikazu Mizuno , Masanori Sakai , Takaaki Noda
IPC分类号： H01L21/30 , C23C16/455
CPC分类号： C23C16/45536 , C23C16/345 , C23C16/452 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/3185 , H01L21/67017 , H01L21/67109
摘要： Disclosed is a substrate processing apparatus, comprising a processing chamber, a holder to hold at least a plurality of product substrates, a heating member, a supplying member to alternately supply at least a first reactant and a second reactant, and a control unit, wherein the control unit executes forming thin films on the substrates by supplying the first reactant, removing a surplus of the first reactant after the first reactant has been adsorbed on the product substrates, subsequently supplying the second reactant, to cause the second reactant to react with the first reactant adsorbed on the substrates, and executes the forming the thin films in a state where a number of the product substrates is insufficient when a number of the product substrates is less than a maximum number of the product substrates which can be held by the holder.
摘要翻译：公开了一种基板处理装置，包括处理室，用于保持至少多个产品基板的保持器，加热构件，供应构件以交替地供应至少第一反应物和第二反应物，以及控制单元，其中所述控制单元通过供给所述第一反应物，在所述基板上形成薄膜，在所述第一反应物被吸附在所述产物基板上之后除去剩余的所述第一反应物，随后供给所述第二反应物，以使所述第二反应物与所述第二反应物反应第一反应物吸附在基板上，并且当产品基板的数量少于可由保持件保持的产品基板的最大数量时，在多个产品基板不足的状态下执行薄膜的形成。

19. 发明授权

US07892983B2 Substrate processing apparatus and producing method of semiconductor device 有权
标题翻译：基板加工装置及半导体装置的制造方法
公开(公告)号：US07892983B2
公开(公告)日：2011-02-22
申请号：US11664726
申请日：2005-10-05
申请人： Hironobu Miya , Taketoshi Sato , Norikazu Mizuno , Masanori Sakai , Takaaki Noda
发明人： Hironobu Miya , Taketoshi Sato , Norikazu Mizuno , Masanori Sakai , Takaaki Noda
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45536 , C23C16/345 , C23C16/452 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/3185 , H01L21/67017 , H01L21/67109
摘要： Disclosed is a substrate processing apparatus, comprising a processing chamber, a holder to hold at least a plurality of product substrates, a heating member, a supplying member to alternately supply at least a first reactant and a second reactant, and a control unit, wherein the control unit executes forming thin films on the substrates by supplying the first reactant, removing a surplus of the first reactant after the first reactant has been adsorbed on the product substrates, subsequently supplying the second reactant, to cause the second reactant to react with the first reactant adsorbed on the substrates, and executes the forming the thin films in a state where a number of the product substrates is insufficient when a number of the product substrates is less than a maximum number of the product substrates which can be held by the holder.
摘要翻译：公开了一种基板处理装置，包括处理室，用于保持至少多个产品基板的保持器，加热构件，供应构件以交替地供应至少第一反应物和第二反应物，以及控制单元，其中所述控制单元通过供给所述第一反应物，在所述基板上形成薄膜，在所述第一反应物被吸附在所述产物基板上之后除去剩余的所述第一反应物，随后供给所述第二反应物，以使所述第二反应物与所述第二反应物反应第一反应物吸附在基板上，并且当产品基板的数量少于可由保持件保持的产品基板的最大数量时，在多个产品基板不足的状态下执行薄膜的形成。

20. 发明申请

US20100233887A1 PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：半导体器件和衬底加工设备的生产方法
公开(公告)号：US20100233887A1
公开(公告)日：2010-09-16
申请号：US12788697
申请日：2010-05-27
申请人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/314 , H01L21/316 , H01L21/318
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the substrate and the ligand of the first reaction material, the second step of removing the excessive first reaction material from the processing chamber, the third step of supplying a second reaction material to the substrate to subject a ligand substituted by the first step to a ligand substitution reaction with respect to a reaction site, the fourth step of removing the excessive second reaction material from the processing chamber, and a fifth step of supplying a third reaction material excited by plasma to the substrate to subject a ligand, not subjected to a substitution reaction with respect to a reaction site in the third step, to a ligand substitution reaction with respect to a reaction site, wherein the steps 1-5 are repeated a specified number of times until a film of a desired thickness is formed on the substrate surface.
摘要翻译：一种半导体器件的制造方法，包括：第一步骤，将第一反应材料供给到容纳在处理室中的基板上以进行配体取代反应，所述配体作为存在于所述基板的表面上的反应位点和所述配体的配体第一反应材料，从处理室除去过量的第一反应材料的第二步骤，向基板供给第二反应材料以使经取代第一步的配体经受相对于反应的配体取代反应的第三步骤从处理室中除去过量的第二反应物质的第四步骤，以及将由等离子体激发的第三反应物质供给到基板上的第五步骤，以使受体没有相对于反应位点进行取代反应的配体在第三步中，涉及相对于反应位点的配体取代反应，其中步骤1-5是重复的施加指定次数，直到在基板表面上形成所需厚度的膜。

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